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    SM 678 N Search Results

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    SM 678 N Price and Stock

    Winchester Interconnect WIN18-SMSM-072

    RF Cable Assemblies SMA Plug to SMA Plug 18GHz, 72in DT-SS-072
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics WIN18-SMSM-072 10
    • 1 $397.01
    • 10 $367.86
    • 100 $367.86
    • 1000 $367.86
    • 10000 $367.86
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    Winchester Interconnect WIN18-SMSM-048

    RF Cable Assemblies SMA Plug to SMA Plug 18GHz, 40" DT-SS-040
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics WIN18-SMSM-048 5
    • 1 $376.59
    • 10 $348.94
    • 100 $348.94
    • 1000 $348.94
    • 10000 $348.94
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    Winchester Interconnect WIN18-SMSM-036

    RF Cable Assemblies SMA Plug to SMA Plug 18GHz, 36in DT-SS-036
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics WIN18-SMSM-036 5
    • 1 $377.7
    • 10 $349.97
    • 100 $349.97
    • 1000 $349.97
    • 10000 $349.97
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    Winchester Interconnect WIN18-NMSM-036

    RF Cable Assemblies SMA Plug to N Plug 18GHz, 36in DT-NS-036
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics WIN18-NMSM-036 3
    • 1 $326.93
    • 10 $302.93
    • 100 $292.06
    • 1000 $292.06
    • 10000 $292.06
    Buy Now

    Winchester Interconnect WIN18-SMNM-036

    RF Cable Assemblies SMA Plug to N Plug 18GHz, 36in DT-NS-036
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics WIN18-SMNM-036
    • 1 -
    • 10 $302.93
    • 100 $292.06
    • 1000 $292.06
    • 10000 $292.06
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    SM 678 N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FQU5N40 N-Channel QFET MOSFET 400 V, 3.4 A, 1.6 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state


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    PDF FQU5N40

    Untitled

    Abstract: No abstract text available
    Text:  N-Channel QFET MOSFET 400 V, 30 A, 140 mΩ Description   This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to


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    PDF

    Valor

    Abstract: SM75176E SM75176EL ST5116 YYW7517
    Text: NT IA PL M Applications • VALOR ST5116 equivalent ■ Telecom CO ■ Surface mount, dual transformer for S oH *R Features transmit and receive SM YYW7517 W 6L ■ 1500 VAC HIPOT ■ RoHS compliant* SM75176L - T1/CEPT/ISDN-PRI Transformer Electrical Specifications @ 25 °C


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    PDF ST5116 YYW7517 SM75176L SM75176L SM75176EL. SM75176E 2002/95/EC Valor SM75176EL YYW7517

    F799

    Abstract: NL JH CHN 648 CHN 649
    Text: 642+, >@097:7/?@=3 >75:/8 =38/C 4HERSPHQ Y M[r48B mqcn]bcha ][j[\cfcns Y Icab m_hmcncp_@ 7;6gW Y 7 Gilg D ]ih`caol[ncih Gcf_ Ni4@F799:>7 Y W[mb ncabn nsj_ [p[cf[\f_ Y Fhpclihg_hn[f `lc_h^fs jli^o]n /RiIS ]igjfc[hn0 Y Oonfch_ Ecg_hmcihm@ /784; r =4; r 76460 gg


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    PDF

    Y766

    Abstract: No abstract text available
    Text: 64,-42 97:7/?@=3 <;B3= =38/D 4IESTQIR [ [ [ [ [ [ [ [ [ [ Hcf_ Oi4 @ G799:>7 A 2 3 Hcf_ Oi4 @ :6699<: Hcf_ Oi4 @ S;67:?99: Hcf_ Oi4@ERE766686:?7<8 1;:?/1? 2/?/ Eihn[]n [ll[ha_g_hn 1;78 7C Oi aif^ jf[n_^@ 766g g[r4 Iif^ jf[n_^@ ;6g g[r4 Eihn[]n S_mcmn[h]_


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    PDF ERE766686: CaThP82 6WCE596WFE 596WFE 6WCE596WFE2 Y766

    CHN 749

    Abstract: No abstract text available
    Text: ;=-6474,<=:0 47<0:60/4,<0 3423 <0690:,<=:0 98?0: :05,A 31*~1,{< 1EBOPMEN \ \ \ \ \ \ \ \ \ \ Hcf_ Oi4@G79:;7= > / 0 Hcf_ Oi4@:666<7>8 Hcf_ Oi4@ERE6?66868><>? .87<,.< /,<, .845 Eihn[]n [ll[ha_g_hn 7C Eihn[]n l_mcmn[h]_ CaOc ;C 8;6WCE ;C 96WFE Eihn[]n l[ncha


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    PDF 866gX CHN 749

    Untitled

    Abstract: No abstract text available
    Text: 0.|.~ 8:*3141~9:7- 01/0 65<-7 7-2~> .C@MNKCL W W W W W W Gcf_ Ni4@ F79:;7= ; , - Gcf_ Ni4@ :6689=6> W UL chmof[ncih msmn_g@ Df[mm G W Fhpclihg_hn[f `lc_h^fs jli^o]n /RiIS ]igjfc[hn0 W Oonfch_ Ecg_hmcihm@ /7?46 r 7;4; r 7;4;0 gg Gcf_ Ni4@DQD786686=<;8? +512


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    PDF DQD786686 76gg40

    Untitled

    Abstract: No abstract text available
    Text: 53+,3 =?/8696.>?<2 69>2<8216.>2 ;:A2< <27.C 3HESTQHR Hcf_ Oi4@G79:;7= \ 76C mqcn]bcha ][j[\cfcns \ UW3; 78;WCE [jjlip_^ \s VM mn[h^[l^ /ihfs `il 7 Hilg C0 Hcf_ Oi4@S;68=>;?7 \ Qf[mnc] m_[f_^ [h^ `for jlii`_^ nsj_m [p[cf[\f_ \ 7 Hilg C [h^ 7 Hilg E ]ih`caol[ncihm


    Original
    PDF CaThP82 96WFE

    CHN 747

    Abstract: MOCN CHN 648
    Text: 86./64 ;9<91AB?5 >=D5? ?5:1F 6KGWXUKV _ _ _ _ _ _ _ _ _ _ Hcf_ Oi4 @ G799:>7 C 4 5 Hcf_ Oi4 @ :6699<: Hcf_ Oi4 @ S;67:?99: Hcf_ Oi4@ERE766686:?7<8 3=<A13A 41A1 3=9: Eihn[]n [ll[ha_g_hn 7C Oi aif^ jf[n_^@ 766g g[r4 Iif^ jf[n_^@ ;6g g[r4 Eihn[]n S_mcmn[h]_


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    PDF ERE766686: CaThP82 6WCE596WFE 596WFE 766gC 6WCE596WFE2 CHN 747 MOCN CHN 648

    CHN 846

    Abstract: CHN 64 946 CHN 749 CHN 649 CHN 848 DRD68667667 KRY377 IL 78 F 05 CHN 748
    Text: 53*,3~6 /KRY377;G3J0 8696.>?<2 5645 ;:A2< <27.B 3FCPQNFO W W W W W W W W W W Gcf_ Oi4@F79:;7= Gcf_ Oi4@77<?9: Gcf_ Oi4@DRD68667667?;7 0:9>.0> 1.>. 0:67 Dihn[]n [ll[ha_g_hn 7B Dihn[]n l_mcmn[h]_ 766g /[n 7B <WED0 Dihn[]n g[n_lc[f BaThP82 BaThP8Jh8P9 7<B 8;6WBD


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    PDF /KRY377 DRD68667667? BaThP82 CHN 846 CHN 64 946 CHN 749 CHN 649 CHN 848 DRD68667667 KRY377 IL 78 F 05 CHN 748

    B0680

    Abstract: bd 682 0477A2 her32 bd676 Bd 676/BD 675 BD677 BD 678 BD680 BD681
    Text: BD 676 'BD 678 -BD 680 -BD 682 'W Silizium-PNP-Darlington-Leistungstransistoren Silicon PNP Darlington Power Transistors Anwendungen: NF-Endstufen Applications: AF-output stages Besondere Merkmale: Features: • Sehr hohe Stromverstärkung • Very high current transfer ratio


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    PDF 682are mentarytoBD675 BD677 BD679 BD681 B0680 bd 682 0477A2 her32 bd676 Bd 676/BD 675 BD 678 BD680 BD681

    G50Q2YS40

    Abstract: MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js
    Text: TOSHIBA [1 ] Product List [ 1 ] Product List Product No. GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q 311 GT15G101 GT15J101 GT15J102 GT15J103 SM GT15Q101 GT15Q301 GT15Q 311 GT20D101 GT20D201 GT20G101 GT20G101 (SM) GT20G102 GT20G102 (SM) GT20J301 GT20J311 GT25G101


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    PDF GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q GT15G101 GT15J101 GT15J102 GT15J103 GT15Q101 G50Q2YS40 MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON MDO^miera «! BD677/A/679/A/681 BD678/A/680/A/682 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES . MONOLITHIC DARLINGTON CONFIGURATION . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE


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    PDF BD677/A/679/A/681 BD678/A/680/A/682 BD677, BD677A, BD679, BD679A BD681 OT-32 BD678, BD678A,

    XC084

    Abstract: CXC574 3122-X CXC190
    Text: Fast Recovery D iodes ~ C a p s u le types Type ^RRM I f A V ^ F(RM S) Range @ T hs 55°C @ T.hs 25°C IF Typical Reverse Recovered Charge @ T hs25°C and Typical Reverse Recovery @ Tj Max. 10ms (50% Chord) V r« 6 0 % ^FSM (1) ^RRM (Note 3) (V) di/dt (Note 2)


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    PDF xCXC174 xCXC176 xCXC190 XC084 XHXC103 XC164 XHXC166 xCXC224 xCXC314 xCXC474 CXC574 3122-X CXC190

    Untitled

    Abstract: No abstract text available
    Text: BD675, BD675A, BD677, BD677A BD679, BD679A, BD681 BD675, 675A, 677, 677A, 679, 679A, 681 NPN PLASTIC POWER TRANSISTORS, Medium Power Darlingtons Complementary BD676, 676A, 678, 678A, 680, 680A, 682 PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE DIM MIN.


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    PDF BD675, BD675A, BD677, BD677A BD679, BD679A, BD681 BD676,

    MSG100L41

    Abstract: TSS1G41 SF5B42 SM6G14 TSS2G41 1J44 1J-44 TSS25J47S TSS2J2A44S f0r3g
    Text: •A L P H A N U M E R IC A L IN D E X # Type No. CU16J6S3 CU16L6A3 CU16Q6S3 CU30J6S3 CU30L6A3 CU30Q6S3 CU50J6S3 CU50L6A3 CU50Q6S3 CU80J6S3 CU80L6A3 CU80Q6S3 CU80U6A3 CU150J6S3 CU150L6A3 CU150Q6S3 CU150U6A3 CU300J6S3 CU300F6A3 CU300Q6S3 CU300U6A3 MSA60G41


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    PDF CU16J6S3 CU16L6A3 CU16Q6S3 CU30J6S3 CU30L6A3 CU30Q6S3 CU50J6S3 CU50L6A3 CU50Q6S3 CU80J6S3 MSG100L41 TSS1G41 SF5B42 SM6G14 TSS2G41 1J44 1J-44 TSS25J47S TSS2J2A44S f0r3g

    10M80

    Abstract: 10M15 10ELS4 10EF2 10ELS1 10ELS2 10ELS6 10KF10 10KF10B 10KF20
    Text: - 38- A m 1& £ [Si # is m & æ |SJ # tt * ffi £ £ Vr sm Vr r m Vr IFH Tfc# V (V) (V) (A) (°C) I o,I f * (A) CC> IFSM T & f * Vpmax (A) (°C) (V) «DJîËfctt I f (A) TTC) Igmax * fife ^ ffi (ü A) V r (V) T(°C) 10EF2 ÎOELSI 10ELS2 10ELS4 10ELS6


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    PDF 10EF2 200ns 10ELS1 150ns 10ELS2 10ELS4 10ELS6 10M80 10M15 10EF2 10KF10 10KF10B 10KF20

    10EF2

    Abstract: 10M15 10ELS1 10ELS2 10ELS4 10ELS6 10KF10 10KF10B 10KF20 10KF20B
    Text: - 38 - A m 1& £ [Si # is m & æ |SJ # tt * ffi £ £ Vr sm Vr r m Vr IFH Tfc# V (V) (V) (A) (°C) I o,I f * (A) CC> IFSM T & f * Vpmax (A) (°C) (V) «DJîËfctt I f (A) TTC) Igmax * fife ^ ffi (ü A) V r (V) T(°C) 10EF2 ÎOELSI 10ELS2 10ELS4 10ELS6


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    PDF 10EF2 200ns 10ELS1 150ns 10ELS2 10ELS4 10ELS6 10EF2 10M15 10KF10 10KF10B 10KF20 10KF20B

    10M15

    Abstract: 10EF2 1S783 10MA80 10ELS1 10ELS2 10ELS4 10ELS6 10KF10 10KF10B
    Text: - 38 - A m 1& £ [Si # is m & æ |SJ # tt * ffi £ £ Vr sm Vr r m Vr IFH Tfc# V (V) (V) (A) (°C) I o,I f * (A) CC> IFSM T & f * Vpmax (A) (°C) (V) «DJîËfctt I f (A) TTC) Igmax * fife ^ ffi (ü A) V r (V) T(°C) 10EF2 ÎOELSI 10ELS2 10ELS4 10ELS6


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    PDF 10EF2 200ns 10ELS1 150ns 10ELS2 10ELS4 10ELS6 10M15 10EF2 1S783 10MA80 10KF10 10KF10B

    10M80

    Abstract: 10MA80 10M60 10M40 10M15 10EF2 1s785 10V-200 10ELS2 10ELS4
    Text: - 38- A m 1& £ [Si # is m & æ |SJ # tt * ffi £ £ Vr sm Vr r m Vr IFH Tfc# V (V) (V) (A) (°C) I o,I f * (A) CC> IFSM T & f * Vpmax (A) (°C) (V) «DJîËfctt I f (A) TTC) Igmax * fife ^ ffi (ü A) V r (V) T(°C) 10EF2 ÎOELSI 10ELS2 10ELS4 10ELS6


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    PDF 10EF2 200ns 10ELS1 150ns 10ELS2 10ELS4 10ELS6 10M80 10MA80 10M60 10M40 10M15 10EF2 1s785 10V-200

    10M15

    Abstract: 10EF2 10ELS1 10ELS2 10ELS4 10ELS6 10KF10 10KF10B 10KF20 10KF20B
    Text: - 38 - A m 1& £ [Si # is m & æ |SJ # tt * ffi £ £ Vr sm Vr r m Vr IFH Tfc# V (V) (V) (A) (°C) I o,I f * (A) CC> IFSM T & f * Vpmax (A) (°C) (V) «DJîËfctt I f (A) TTC) Igmax * fife ^ ffi (ü A) V r (V) T(°C) 10EF2 ÎOELSI 10ELS2 10ELS4 10ELS6


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    PDF 10EF2 200ns 10ELS1 150ns 10ELS2 10ELS4 10ELS6 10M15 10EF2 10KF10 10KF10B 10KF20 10KF20B

    10M15

    Abstract: 10EF2 10ELS1 10ELS2 10ELS4 10ELS6 10KF10 10KF10B 10KF20 10KF20B
    Text: - 38 - A m 1& £ [Si # is m & æ |SJ # tt * ffi £ £ Vr sm Vr r m Vr IFH Tfc# V (V) (V) (A) (°C) I o,I f * (A) CC> IFSM T & f * Vpmax (A) (°C) (V) «DJîËfctt I f (A) TTC) Igmax * fife ^ ffi (ü A) V r (V) T(°C) 10EF2 ÎOELSI 10ELS2 10ELS4 10ELS6


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    PDF 10EF2 200ns 10ELS1 150ns 10ELS2 10ELS4 10ELS6 10M15 10EF2 10KF10 10KF10B 10KF20 10KF20B

    SANYO SS 1001

    Abstract: 2SK1069 2SK771 la 1001 sanyo d 2046 K 2058 transistor
    Text: SANYO S E M I C O N D U C T O R CORP 22E D • 7 ^^7 □7 h 0DD74ES 2SK1069 4 T -2 9 - Z 5 N -C h a n n e l J u n c tio n S ilic o n FET 2058 Low-Frequency General-Purpose Amp Applications A p p lic a tio n s • Low-frequency general-purpose am plifiers • Ideal for use in variable resistors, analog sw itches, low-frequency am plifiers, and co n stan t-cu rren t


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    PDF 0DD74E5 2SK1069 2SK1069-applied SANYO SS 1001 2SK1069 2SK771 la 1001 sanyo d 2046 K 2058 transistor

    2N6178

    Abstract: 2N6180 2N6181 b0244c npn darlington 400v 15a 2N2102 2N3879 2N4036 2N5320 2N5322
    Text: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES f T to 2 5 0 M H z . . . I r to 6 0 A . . . P r to 1 4 0 W le * - 1 A MX. P j « 7 W m ax. T O - » • P j “ 10 f t max. (TO -39) ft 30 x 30* 30x30 42x42 2N2102 (N-P-N] 2N4036 [P-N-P] 2N5320 [N-P-N] 2N3053


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    PDF ITO-391 Pt-85-117 80-12SW 30x30 42x42 103x103 2N6178 2N6180 2N6181 b0244c npn darlington 400v 15a 2N2102 2N3879 2N4036 2N5320 2N5322