SM-38 TRANSISTOR Search Results

SM-38 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

SM-38 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
SE110N Abstract: A4032 SE130N SE005N SE090N high hfe transistor FMQG5FM SLA7022M SE012 3gu diode Text: Index Type No. Order Type No. Type Type No. 2SA1186 Type 16 2SC3830 16 2SC3831 16 2SC3832 19 2SC3833 2SA1294 1R 2SC3834 2SA1295 16 2SC3835 16 2SC3851 General Purpose Transistor 19 16 2SC3852 Low VcE(sat)-High hFE Transistor 18 19 2SC3856 16 2SC3857 Transistors for Audio Am plifier (Single Emitter)	OCR Scan	2SA1186 2SA1215 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1488 2SA1492 SE110N A4032 SE130N SE005N SE090N high hfe transistor FMQG5FM SLA7022M SE012 3gu diode	PDF
transistor 5cw Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10 Text: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000	Original	CDMA2000 2N6084 BLV102 CA5815CS D1020UK LF2810A MRF175LV MSC75652 PH1600-7 SD1466 transistor 5cw transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10	PDF
TO-18 amps pnp transistor Abstract: sot 23 2n2907 pnp transistor 2N0328 HS4208 M95FA-03-STD/M95FAR02A06 Text: Microsemi PNP Transistors Part Number Microsemi Division 2N0329A JAN2N5795 JAN2N5796 JANTX2N5795 JANTX2N5796 JANTXV2N5795 JANTXV2N5796 MMBT3906 MMBT4403 MMBT2907A HS4208 HS3013 2N3250A 2N3251A JAN2N3250A JAN2N3251A JANTX2N3250A JANTX2N3251A JANTXV2N3250 JANTXV2N3251	OCR Scan	OT-23 TO-18 amps pnp transistor sot 23 2n2907 pnp transistor 2N0328 HS4208 M95FA-03-STD/M95FAR02A06	PDF
B W4 Transistor Abstract: transistor hemt TRANSISTOR W2 Stanford Microdevices 4 ghz Text: Product Description SMW Series Stanford Microdevices’ SMW Series are high performance GaAs High Electron Mobility Transistor HEMT MMICs housed in thermally-efficient ceramic packages. These HEMT MMICs are fabricated using molecular beam epitaxial growth	Original		PDF
2SA1930 2sc5171 Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228	Original	SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn	PDF
smd N fet Abstract: top-tech fet P CHANNEL Text: Table of Contents Inhaltsverzeichnis Page Seite SIPMOS -Kleinsignal-Transistoren Bedrahtete Bauformen . 2 - N-Kanal-Anreicherungstypen . 2 - P-Kanal-Anreicherungstypen. 2	OCR Scan		PDF
AT-41435 Abstract: transistor D 2394 ATF pHEMT 5989-0925EN ATF-511P8 AT-41533 ATF-38143 AT-41486 ATF-501P8 LPCC Text: Agilent Technologies Transistors Selection Guide Silicon Bipolar Transistors NFo and Ga are specified at a low noise bias point, while P1 dB, G1 dB, and \|S21E\|2 are specified at bias points which optimize these parameters. Low Noise Transistors Typical Specifications @ 25°C Case Temperature	Original	AT-30511 OT-143 AT-30533 OT-23 AT-31011 AT-31033 5988-9509EN 5989-0925EN AT-41435 transistor D 2394 ATF pHEMT 5989-0925EN ATF-511P8 AT-41533 ATF-38143 AT-41486 ATF-501P8 LPCC	PDF
bpw 81 t Abstract: SFH213 sfh 206 BP 104 FAS Text: S i -F o t o d e t e k t o r e n S il ic o n P h o t o d e t e c t o r s T y p e n ü b e r s ic h t S ummary 1. 1. Foto IC für Fernsteuerung SFH 5110 2. SFH 5410 Fotodetektoren in SM T T ypes Photo IC for Remote Control SFH 5111 2. 2.1.SM T-Transistoren	OCR Scan	E9087) SFH3410 bpw 81 t SFH213 sfh 206 BP 104 FAS	PDF
Untitled Abstract: No abstract text available Text: Product Description SMW Series Stanford M icrodevices’ SM W Series are high performance GaAs High Electron Mobility Transistor HEMT MMICs housed in therm ally-efficient ceram ic packages. These HEMT MMICs are fabricated using m olecular beam epitaxial growth	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: Product Description SMW Series Stanford M icrodevices’ SM W Series are high performance GaAs High Electron Mobility Transistor HEMT MMICs housed in therm ally-efficient ceram ic packages. These HEMT MMICs are fabricated using m olecular beam epitaxial growth	OCR Scan		PDF
2n1711 complement Abstract: bc140 2N2405 transistor 2n2270 2N1893 2N2102 2N4036 BFX84 BFX85 ZT86 Text: NPN GENERAL PURPOSE TABLE1 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS The d evices s h o w n in th is ta b le are general purpose tran sisto rs desig ne d fo r sm all and m edium signal, lo w and m ed iu m p o w e r a m p lific a tio n from D.C. to rad io freq u e n cie s in C om m ercial,	OCR Scan	BC160 BFY50 2N1613 2N1711 ZT189 ZT211 BCY65E 1000t BCY77 2n1711 complement bc140 2N2405 transistor 2n2270 2N1893 2N2102 2N4036 BFX84 BFX85 ZT86	PDF
CL1501 Abstract: 2SC4154 Text: M ITSUBISHI SEMICONDUCTOR <SM ALL-SIGNAL TRANSISTO R 2SC4154 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC4154 is a super mini package resin sealed silicon NPN epitaxial OUTLINE DRAWING type transistor. It is designed for low frequency voltage amplify application.	OCR Scan	2SC4154 2SC4154 2SA1602. 100mA, SC-70 270Hz X10-3 CL1501	PDF
2N5764 Abstract: 2N6764 25C31 2N6164 2N6763 Text: Standard Power MOSFETs, File Number 2N6763, 2N6764 1590 N-Channel Enhancement-Mode Power MOS Field-Ef fect Transistors 31A and 38A, 60V-100V rDs on = 0.08 O and 0.055 Q N-CHANNEL ENHANCEMENT MODE Feature«: • SOA is power-dissipation lim ited ■ Nanosecond sw itching speeds	OCR Scan	2N6763, 2N6764 0V-100V 2N6763 2N6764 2N5764 25C31 2N6164	PDF
2n5764 Abstract: 2N6764 JANTXV 2N6764 JANTX 2N6764 2N6164 2N6901 2N6763 25C31 Text: Standard Power MOSFETs, File Number 2N6763, 2N6764 1590 N-Channel Enhancement-Mode Power MOS Field-Ef fect Transistors 31A and 38A, 60V-100V rDs on = 0.08 O and 0.055 Q N-CHANNEL ENHANCEMENT MODE Feature«: • SOA is power-dissipation lim ited ■ Nanosecond sw itching speeds	OCR Scan	2N6763, 2N6764 0V-100V 2N6763 2N6764 2N6796 O-2I35AF 2n5764 2N6764 JANTXV 2N6764 JANTX 2N6164 2N6901 25C31	PDF

tis99 Abstract: tis94 texas instruments tis97 TIS96 TIS98 TIS95 s7310 4518T EO65 Text: TYPES TIS94 THRU TIS99 N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 731 0 1 8 7 , J U N E 1 9 6 7 - R E V IS E D M A R C H 1973 A C O M P LET E F A M IL Y OF LOW-NOISE, LOW- TO M E D IU M -C U R R E N T S IL E C T t T R A N S IS T O R S * FOR U SE IN Ht-FI A U D IO A M P L IF IE R S A N D	OCR Scan	TIS94 TIS99 TIS96 TIS99) texas instruments tis97 TIS98 TIS95 s7310 4518T EO65	PDF
schematic diagram CORDLESS DRILL Abstract: MC2833P low power fm transmitter .47 uH MC2833 MC2833 ic Low power FM transmitter system M1175-A MC2833D M1175A Text: Order this document by MC2833/D MC2833 Low Power FM Transmitter System LOW POWER FM TRANSMITTER SYSTEM MC2833 is a one–chip FM transmitter subsystem designed for cordless telephone and FM communication equipment. It includes a microphone amplifier, voltage controlled oscillator and two auxiliary transistors.	Original	MC2833/D MC2833 MC2833 schematic diagram CORDLESS DRILL MC2833P low power fm transmitter .47 uH MC2833 ic Low power FM transmitter system M1175-A MC2833D M1175A	PDF
MC2833 ic Abstract: MC2833P schematic diagram CORDLESS DRILL MC2833 MC2833D M1312 circuit diagram of 27 mhz transmitter 16 pin ic mc2833 application "Frequency Tripler" circuit diagram of fm transmitter Text: Order this document by MC2833/D MC2833 Low Power FM Transmitter System MC2833 is a one–chip FM transmitter subsystem designed for cordless telephone and FM communication equipment. It includes a microphone amplifier, voltage controlled oscillator and two auxiliary transistors.	Original	MC2833/D MC2833 MC2833 MC2833/D* MC2833 ic MC2833P schematic diagram CORDLESS DRILL MC2833D M1312 circuit diagram of 27 mhz transmitter 16 pin ic mc2833 application "Frequency Tripler" circuit diagram of fm transmitter	PDF
Untitled Abstract: No abstract text available Text: SANYO SEMICONDUCTOR CORP 55E 7cìeì707b O O O b á ñ 11 a D T - 31-15 2SC4407 NPN Epitaxial Planar Silico n Transistor 2059 VHF/UHF MIX, OSC Applications 2760 Applications • V H F/U H F m ixers, frequency converters, local oscillators Features f r = 3.0GHz typ	OCR Scan	2SC4407 2SC4407-applied	PDF
Untitled Abstract: No abstract text available Text: • M3D E27 1 0 0 5 3 73 0 7fl4 ■ HAS _ 2N6763 2N6764 H a r r is N-Channel Enhancem ent-Mode Power MOS Field-Effect Transistors A u g u st 1991 Features Package TO -20 4 A E BOTTOM VIEW • 31A and 38A, 60V - 100V • rDS on = 0 .0 8 ÎÎ and 0 .0 5 5 ÎÎ	OCR Scan	2N6763 2N6764 2N6763 2N6764	PDF
BAS 40 relia Abstract: No abstract text available Text: H M y / r # / C « * »« r n. a u . ! r O S G / 7 7 l B B J B S B B a 1 4 0 C o m m e r c e D r iv e M o n t g o m e r y v ilie , P A 1 8 9 3 6 -1 0 1 3 T e l: 2 1 5 6 3 1 -9 8 4 0 S D 1 8 6 8 RF & MICROWAVE TRANSISTORS MICROWAVE TELECOMMUNICATION APPLICATIONS	OCR Scan	65GHz SD1888 SO1868 10CJpi- SD1868 13S/3 89S/2S 65S/16 BAS 40 relia	PDF
Untitled Abstract: No abstract text available Text: M M O T O R O LA ' M C 2833 Low Pow er FM T ran sm itter System M C 2833 is a o n e -c h ip FM tra n sm itte r subsystem designed for cordless telephone and FM co m m unication equipm ent. It includes a m icrophone a m plifier, voltage controlled oscillator and two auxiliary transistors.	OCR Scan	MC2833 Hz/x12	PDF
Untitled Abstract: No abstract text available Text: 32E D m Ô23b320 OGlb^flS S WÊ SIP NPN Silicon RF Transistor SIEMENS/ SP C Li SEMICONDS BFR35AP _ • For broadband amplifiers up to 2 GHz and fast non saturated switches at collector currents from 0.5 to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions!	OCR Scan	23b320 BFR35AP 62702-F OT-23 T-31-17	PDF
Untitled Abstract: No abstract text available Text: NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ISSU E 1 - MARCH 94_ FEATU RES * 6 0 V olt V,CEO G a in o f 1 0 K at lc=0.5 A m p Ptot=1 W att ABSOLUTE M A X IM U M RATINGS. PARAMETER SY M BO L Collector-Base Voltage Collector-Emitter Voltage	OCR Scan	BCX38A/B/C	PDF
Untitled Abstract: No abstract text available Text: IO Stanford Microdevices Product Description SCA-14 Stanford M icrodevices’ SCA-14 is a high performance Gallium Arsenide Hetrojunction Bipolar Transistor M MIC Amplifier. A Darlington configuration is utilized for broadband performance up to 3 GHz. The heterojunction increases	OCR Scan	SCA-14 SCA-14 100mA 36dBm. 100mW	PDF

SM-38 TRANSISTOR Search Results

SM-38 TRANSISTOR Result Highlights (5)

SM-38 TRANSISTOR Datasheets Context Search

SE110N

transistor 5cw

TO-18 amps pnp transistor

B W4 Transistor

2SA1930 2sc5171

smd N fet

AT-41435

bpw 81 t

Untitled

Untitled

2n1711 complement

CL1501

2N5764

2n5764

tis99

schematic diagram CORDLESS DRILL

MC2833 ic

Untitled

Untitled

BAS 40 relia

Untitled

Untitled

Untitled

Untitled