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    SM56V16800

    Abstract: MSM56V16800E-8
    Text: E2G1053-18-54 O K I Semiconductor M SM 56V16800E sversion:,ul1998 2-Bank x 1,048,576-Word x 8-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The M SM 56V16800E is a 2-bank x 1,048,576-word x 8-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and


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    SM56V16800

    Abstract: transistor 305 56V16800 active suspension BA RV 2H24D d0117
    Text: OKI Semiconductor SM56V16800 2-Bank x 1,048,576-Word x 8-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The M SM 56V16800 is a 2-b an k x 1,048,576-w ord x 8-bit synchronous D ynam ic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V, and the inputs and outputs are LVTTL Compatible.


    OCR Scan     		PDF MSM56V16800 576-Word MSM56V16800 cycles/64 b724240 SM56V16800 transistor 305 56V16800 active suspension BA RV 2H24D d0117