SMT-R000
Abstract: smd 2817
Text: SMT-R000 Bauform / Size : 2817 ISA-PLAN - SMD Präzisionswiderstände / SMD precision resistors Technische Daten / technical data Widerstandswerte Resistance values < 0.2 mOhm Temperaturkoeffizient Temperature coefficient ca./approx. 3800 ppm/K Temperaturbereich
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SMT-R000
SMT-R000-2012-02-03
D-35683
SMT-R000
smd 2817
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Precision Resistors
Abstract: SMT resistor
Text: SMT Bauform / Size : 2817 ISA-PLAN - SMD Präzisionswiderstände / SMD precision resistors Technische Daten / technical data Widerstandswerte Resistance values 4 mOhm - 4 Ohm Toleranz Tolerance 0.5 %, 1 %, 5 % Temperaturkoeffizient Temperature coefficient
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120dB
SMT-2012-02-03
D-35683
Precision Resistors
SMT resistor
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SMT resistor
Abstract: smd 2817 isabellenhutte SMT
Text: SMT Bauform / Size : 2817 ISA-PLAN - SMD Präzisionswiderstände / SMD precision resistors Technische Daten / technical data Widerstandswerte Resistance values 4 mOhm - 2 Ohm Toleranz Tolerance 0.5 %, 1 %, 2 %, 5 % Temperaturkoeffizient MANGANIN Temperature coefficient (tcr)
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120dB
SMT-2009-06-16
D-35683
SMT resistor
smd 2817
isabellenhutte SMT
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smd 2817
Abstract: isa-plan smd R004
Text: SMT Bauform / Size : 2817 ISA-PLAN - SMD Präzisionswiderstände / SMD precision resistors Technische Daten / technical data Widerstandswerte Resistance values 4 mOhm - 2 Ohm Toleranz Tolerance 0.5 %, 1 %, 2 %, 5 % Temperaturkoeffizient MANGANIN Temperature coefficient (tcr)
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MIL-STD-202
204-B
MIL-STD-26E
108-F
120dB
SMT-2009-02-17
smd 2817
isa-plan
smd R004
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isabellenhutte smt
Abstract: 210B isabellenhutte isabellenhutte precision resistor SMT resistor smd 2817
Text: SMT Bauform / Size : 2817 ISA-PLAN - SMD Präzisionswiderstände / SMD precision resistors TECHNISCHE DATEN / TECHNICAL DATA Widerstandswerte Resistance values 4 mOhm - 2 Ohm Toleranz Tolerance 0.5 %, 1 %, 2 %, 5 % Temperaturkoeffizient MANGANIN® Temperature coefficient (tcr)
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TermiSTD-202
MIL-STD-202
120dB
SMT-2005-08-08
D-35683
isabellenhutte smt
210B
isabellenhutte
isabellenhutte precision resistor
SMT resistor
smd 2817
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Untitled
Abstract: No abstract text available
Text: SMT Bauform / Size : 2817 ISA-PLAN - SMD Präzisionswiderstände / SMD precision resistors TECHNISCHE DATEN / TECHNICAL DATA Widerstandswerte Resistance values 4 mOhm - 2 Ohm Toleranz Tolerance 0.5 %, 1 %, 2 %, 5 % Temperaturkoeffizient MANGANIN® Temperature coefficient (tcr)
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MIL-STD-202
120dB
SMT-2005-11-29
D-35683
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transistor SMD making code 3f
Abstract: A564A D-71254 sdars TDFM3A 2 F transistor dab radio Dielectric Filter 2442 2 pole TDFM2B-1472H-10 TDFM2B-915E-10
Text: Chip Dielectric TDF S eries TDF 2 Pole SMD TDFM (2, 3, 4 Pole SMD) TDFS (2, 3, 4 Pole SMD) Meeting Your Needs Meeting Your Needs 1 Chip Dielectric Filters Meeting Your Needs TDF Description CONTENTS Chip Dielectric Filters Dimensions . 2
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versions5-1099
CF-158-TDFFAMBR
transistor SMD making code 3f
A564A
D-71254
sdars
TDFM3A
2 F transistor
dab radio
Dielectric Filter 2442 2 pole
TDFM2B-1472H-10
TDFM2B-915E-10
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3773 SMD
Abstract: 142012 132101 4221 739 76118 34695 1815 smd 58779
Text: .049 .008 .079 .008 ELECTRICAL CHARACTERISTICS: R25C=10,000 OHMS 1% BETA=3435 OPERATING TEMPERATURE: -40C TO 125C THERMAL TIME CONSTANT: 60 SEC MAX DISSIPATION CONSTANT: 4 mW/C POWER RATING: 400mW AT 25C, DERATE TO 125 NOTES: SMD 0805 PACKAGE .047 .008 DRAWN
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400mW
3773 SMD
142012
132101
4221 739
76118
34695
1815 smd
58779
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S1365
Abstract: No abstract text available
Text: SAW Bandpass Filter 250651B 1. Features z IF Bandpass Filter z Low-Loss Filter z Single-Ended Operation z Ceramic Surface Mount Device SMD Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device (ESD) 2. Package Dimensions
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250651B
ITF05A001
S1365
250551B
NJ5001-CS01
S1365
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3773 SMD
Abstract: 142012 76118 202F CMM0805
Text: .049 .008 .079 .008 ELECTRICAL CHARACTERISTICS: R25C=10,000 OHMS 2% NTC= -4.0 %/ C OPERATING TEMPERATURE: -40C TO 125C THERMAL TIME CONSTANT: 60 SEC MAX DISSIPATION CONSTANT: 4 mW/C POWER RATING: 400mW AT 25C, DERATE TO 125 NOTES: SMD 0805 PACKAGE .047 .008
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400mW
3773 SMD
142012
76118
202F
CMM0805
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beta 3435
Abstract: QT06015-054 3773 SMD 142012 76118 202F NTC Thermistor 301
Text: .019 .002 .039 .002 ELECTRICAL CHARACTERISTICS: R25C=10,000 OHMS 1% BETA=3435 OPERATING TEMPERATURE: -40C TO 125C DISSIPATION CONSTANT: 2.5 mW/C MIN POWER RATING: 250mW AT 25C .019 .002 NOTES: SMD 0402 PACKAGE DRAWN INITIAL DATE BR 11/24/2009 2108 CENTURY WAY
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250mW
beta 3435
QT06015-054
3773 SMD
142012
76118
202F
NTC Thermistor 301
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet TBB1005 R07DS0315EJ1000 Previous: REJ03G0843-0900 Rev.10.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier Features • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.
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TBB1005
R07DS0315EJ1000
REJ03G0843-0900)
PTSP0006JA-A
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet TBB1004 R07DS0314EJ1200 Previous: REJ03G0842-1100 Rev.12.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier Features • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.
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TBB1004
R07DS0314EJ1200
REJ03G0842-1100)
200pF,
PTSP0006JA-A
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet TBB1012 R07DS0317EJ0400 Rev.4.00 Jan 10, 2014 Twin Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier Features • • • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.
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TBB1012
R07DS0317EJ0400
PTSP0006JA-A
TBB1012
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet TBB1010 R07DS0316EJ0600 Previous: REJ03G0844-0500 Rev.6.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier Features • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.
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TBB1010
R07DS0316EJ0600
REJ03G0844-0500)
PTSP0006JA-A
TBB1010
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet TBB1002 R07DS0313EJ1000 Previous: REJ03G0841-0900 Rev.10.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier Features • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.
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TBB1002
R07DS0313EJ1000
REJ03G0841-0900)
PTSP0006JA-A
TBB1002
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet TBB1004 R07DS0314EJ1200 Previous: REJ03G0842-1100 Rev.12.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier Features • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.
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TBB1004
R07DS0314EJ1200
REJ03G0842-1100)
200pF,
PTSP0006JA-A
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet TBB1010 R07DS0316EJ0600 Previous: REJ03G0844-0500 Rev.6.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier Features • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.
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TBB1010
R07DS0316EJ0600
REJ03G0844-0500)
PTSP0006JA-A
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet TBB1002 R07DS0313EJ1000 Previous: REJ03G0841-0900 Rev.10.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier Features • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.
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TBB1002
R07DS0313EJ1000
REJ03G0841-0900)
PTSP0006JA-A
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet TBB1005 R07DS0315EJ1000 Previous: REJ03G0843-0900 Rev.10.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier Features • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.
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TBB1005
R07DS0315EJ1000
REJ03G0843-0900)
PTSP0006JA-A
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet TBB1005 R07DS0315EJ1000 Previous: REJ03G0843-0900 Rev.10.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier Features • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.
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TBB1005
R07DS0315EJ1000
REJ03G0843-0900)
PTSP0006JA-A
TBB1005
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet TBB1004 R07DS0314EJ1200 Previous: REJ03G0842-1100 Rev.12.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier Features • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.
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TBB1004
R07DS0314EJ1200
REJ03G0842-1100)
200pF,
PTSP0006JA-A
TBB1004
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet TBB1016 R07DS0318EJ0300 Previous: REJ03G1327-0200 Rev.3.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier Features • • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.
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TBB1016
R07DS0318EJ0300
REJ03G1327-0200)
PTSP0006JA-A
TBB1016
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet TBB1012 R07DS0317EJ0300 Previous: REJ03G1245-0200 Rev.3.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier Features • • • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.
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TBB1012
R07DS0317EJ0300
REJ03G1245-0200)
PTSP0006JA-A
TBB1012
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