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    SMD 303 TRANSISTOR Search Results

    SMD 303 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLM15PX121BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 120ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX181SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 180ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM21HE802SN1L Murata Manufacturing Co Ltd FB SMD 0805inch 8000ohm NONAUTO Visit Murata Manufacturing Co Ltd
    BLM15PX330BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 33ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX600SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 60ohm POWRTRN Visit Murata Manufacturing Co Ltd

    SMD 303 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    thermistor 100k

    Abstract: 0402CG101J9B200 600S0R3BT250XT 600S1R5BT250XT transistor smd 303 transistor SMD DK PANASONIC ECR SMD TRANSISTOR R90 SLD1026Z SLD1026Z-EVAL-E
    Text: Design Application Note AN-090 2 x SLD-1026Z LDMOS Application Circuits Abstract Bias Discussion Sirenza Microdevices' SLD-1026Z is a high performance LDMOS transistor designed for operation up to 2.7 GHz. This application note demonstrates balanced configuration application circuits operating in the 800,


    Original     		AN-090 SLD-1026Z EAN-105860 thermistor 100k 0402CG101J9B200 600S0R3BT250XT 600S1R5BT250XT transistor smd 303 transistor SMD DK PANASONIC ECR SMD TRANSISTOR R90 SLD1026Z SLD1026Z-EVAL-E PDF

    600S2R7BT250XT

    Abstract: ERT-J1VV104J transistor smd 303 IC 2030 schematic diagram 850 SMD Rework Station thermistor 100k sld1026 smd transistor r32 600L270 r5 t85
    Text: Preliminary SLD-1026Z Product Description Sirenza Microdevices’ SLD-1026Z is a robust 3 Watt high performance LDMOS transistor designed for operation from 10 to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency


    Original     		SLD-1026Z SLD-1026Z 2700MHz. SOF-26 AN-090, EDS-104157 600S2R7BT250XT ERT-J1VV104J transistor smd 303 IC 2030 schematic diagram 850 SMD Rework Station thermistor 100k sld1026 smd transistor r32 600L270 r5 t85 PDF

    600S4R7BT250

    Abstract: ecj2yb1h104k
    Text: Preliminary SLD-1026Z Product Description Sirenza Microdevices’ SLD-1026Z is a robust 3 Watt high performance LDMOS transistor designed for operation from 10 to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency


    Original     		SLD-1026Z SLD-1026Z 2700MHz. ERJ-3EKF3240V EVM-2WSX80B52 ERJ-EKF49R9V ERJ-3EKF1300V 9C06031A2100FKHFT ERJ-3GSY0R00V 600S4R7BT250 ecj2yb1h104k PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SLD-1026Z Product Description Sirenza Microdevices’ SLD-1026Z is a robust 3 Watt high performance LDMOS transistor designed for operation from 10 to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency


    Original     		SLD-1026Z SLD-1026Z 2700MHz. SOF-26 ECJ2YB1H104K ERJ-3EKF3240V EVM-2WSX80B52 ERJ-EKF49R9V ERJ-3EKF1300V PDF

    transistor smd 303

    Abstract: smd 303 transistor smd transistor "3w" RF083 SLD1083CZ
    Text: Preliminary Product Description SLD1083CZ The SLD1083CZ is a 3W high performance LDMOS transistor designed for operation from 300MHz to 2200MHz. It is an excellent solution for applications requiring high linearity and efficiency at a low cost. The SLD1083CZ is typically used in the design of driver stages for


    Original     		SLD1083CZ 300MHz 2200MHz. SLD1083CZ EDS-104013 RF083 transistor smd 303 smd 303 transistor smd transistor "3w" PDF

    transistor smd 303

    Abstract: LL1608-F4N7K CONNECTOR SMA 905 drawing SLD-2083 0603CS delta LL1608-F2N7S 80021 Amp. 100 watt fet pot 100K smd SLD-2083CZ
    Text: SLD-2083CZ Product Description Pb RoHS Compliant & Green Package 12 Watt Discrete LDMOS FET in Ceramic Package Sirenza Microdevices’ SLD-2083CZ is a robust 12 Watt high performance LDMOS transistor designed for operation to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency at


    Original     		SLD-2083CZ SLD-2083CZ 2700MHz. EDS-103754 RF083 transistor smd 303 LL1608-F4N7K CONNECTOR SMA 905 drawing SLD-2083 0603CS delta LL1608-F2N7S 80021 Amp. 100 watt fet pot 100K smd PDF

    transistor 603

    Abstract: transistor smd 303 circuit diagram of rfid gate SLD-2083
    Text: SLD-2083CZ Product Description Pb RoHS Compliant & Green Package 12 Watt Discrete LDMOS FET in Ceramic Package Sirenza Microdevices’ SLD-2083CZ is a robust 12 Watt high performance LDMOS transistor designed for operation to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency at


    Original     		SLD-2083CZ SLD-2083CZ 2700MHz. EDS-103754 RF083 transistor 603 transistor smd 303 circuit diagram of rfid gate SLD-2083 PDF

    CONNECTOR SMA 905 drawing

    Abstract: transistor smd 303
    Text: SLD-1083CZ Product Description Sirenza Microdevices’ SLD-1083CZ is a robust 4 Watt high performance LDMOS transistor designed for operation from to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency at a low cost. The SLD-1083CZ is typically used in the design of


    Original     		SLD-1083CZ SLD-1083CZ 2700MHz. EDS-104013 2700MHz RF083 CONNECTOR SMA 905 drawing transistor smd 303 PDF

    0603CS delta

    Abstract: CONNECTOR SMA 905 drawing transistor smd 303 Amp. 100 watt fet pot 100K smd SLD-1083CZ ERT-J1VV104J thermistor 100k ERJ-3GSY0R00V SLD1083CZ
    Text: SLD-1083CZ Product Description Sirenza Microdevices’ SLD-1083CZ is a robust 4 Watt high performance LDMOS transistor designed for operation from to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency at a low cost. The SLD-1083CZ is typically used in the design of


    Original     		SLD-1083CZ SLD-1083CZ 2700MHz. EDS-104013 2700MHz RF083 0603CS delta CONNECTOR SMA 905 drawing transistor smd 303 Amp. 100 watt fet pot 100K smd ERT-J1VV104J thermistor 100k ERJ-3GSY0R00V SLD1083CZ PDF

    circuit diagram SMD Rework Station

    Abstract: 850 SMD Rework Station SLD1026Z 2 watt fet smd transistor w J 3 58
    Text: Preliminary SLD-1026Z Product Description Sirenza Microdevices’ SLD-1026Z is a robust 3 Watt high performance LDMOS transistor designed for operation from 10 to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency


    Original     		SLD-1026Z SLD-1026Z 2700MHz. ProprWSX80B52 ERJ-EKF49R9V ERJ-3EKF1300V 9C06031A2100FKHFT ERJ-3GSY0R00V ERJ-3EKF1001V circuit diagram SMD Rework Station 850 SMD Rework Station SLD1026Z 2 watt fet smd transistor w J 3 58 PDF

    circuit diagram SMD Rework Station

    Abstract: Soldering recommendations for Ldmos Power Amplifiers 1 SOT23 DXF SMD TRANSISTOR R90
    Text: Preliminary SLD-1026Z Product Description Sirenza Microdevices’ SLD-1026Z is a robust 3 Watt high performance LDMOS transistor designed for operation from 10 to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency


    Original     		SLD-1026Z SLD-1026Z 2700MHz. ProprWSX80B52 ERJ-EKF49R9V ERJ-3EKF1300V 9C06031A2100FKHFT ERJ-3GSY0R00V ERJ-3EKF1001V circuit diagram SMD Rework Station Soldering recommendations for Ldmos Power Amplifiers 1 SOT23 DXF SMD TRANSISTOR R90 PDF

    321 SOT

    Abstract: DIP-6 bsp300 SOT23_215 BSS125
    Text: SIEMENS Typenübersicht nach Produktgruppen Selection Guide by Product Groups SIPMOS Small Signal Transistors Type ^88 nto V ^OS(0n)mw mA Q Pese») V Package Page -1 .8 . .-0 .7 - 1.8 .-0 .7 - 1.8 .-0 .7 - 1.8 .-0 .7 TO-92 TO-92 TO-92 TO-92 503 416


    OCR Scan     		OT-223 OT-23 BSSOT-223 OT-89 321 SOT DIP-6 bsp300 SOT23_215 BSS125 PDF

    Untitled

    Abstract: No abstract text available
    Text: Low Saturation Voltage Switching Transistors LSV series Bipolar transistors SBSBO E -pack SMD VcEO V cbo V cEO V ebo le IVI IVI IVI -60 -40 -7 1 E-pack (Lead type) Electrical Characteristics Absolute Maximum Ratings Type No. , Ib Pt Tstg Tj (sus) (min) i AS


    OCR Scan     		2SA1795 2SA1796 2SA1878 2SA1879 2SA1880 2SC4981 ITO-220 PDF

    TRANSISTOR SMD 613

    Abstract: TRANSISTOR SMD DK QC transistor SMD DK -RN Sanken Schottky Diode Mi 15 spx 3955 SANKEN power supply diode zener smd sg 64 transistor SMD DK qs 301 miniature smd transistor KY smd transistor
    Text: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = Revision, see detail specification F = Active pull-down device (BiMOS only) -FP = Factory programmed -LC = Radial lead form LT = Tape and reel (package LH only)


    Original     		MS-001, MS-010, MS-011) MS-010) MS-018) AMS-127B TRANSISTOR SMD 613 TRANSISTOR SMD DK QC transistor SMD DK -RN Sanken Schottky Diode Mi 15 spx 3955 SANKEN power supply diode zener smd sg 64 transistor SMD DK qs 301 miniature smd transistor KY smd transistor PDF

    WR08X200

    Abstract: hdr-1x8 resistor SMD footprint
    Text: NCP1083QBCGEVB Compact, high efficiency, 30 W Reference platform with the NCP1083 Evaluation Board User's Manual http://onsemi.com EVAL BOARD USER’S MANUAL Board Details The NCP1083QBCGEVB implements a PoE module that converts the power from the Ethernet cable to a lower


    Original     		NCP1083QBCGEVB NCP1083 NCP1083QBCGEVB EVBUM2006/D WR08X200 hdr-1x8 resistor SMD footprint PDF

    WR08X512JTL

    Abstract: No abstract text available
    Text: NCP1081SPCGEVB Compact, high efficiency, 30 W Reference platform with the NCP1081 Evaluation Board User's Manual http://onsemi.com EVAL BOARD USER’S MANUAL Board Details The NCP1081SPCGEVB implements a PoE power splitter that converts the voltage on the Ethernet cable to a


    Original     		NCP1081SPCGEVB NCP1081 NCP1081SPCGEVB EVBUM2028/D WR08X512JTL PDF

    67a smd

    Abstract: 2n08l07 2N08L07 POWER SPP80N08S2L-07 "2N08L07" smd diode 67A BR 303 2n08l07 marking s6016 smd 67a
    Text: SPP80N08S2L-07 SPB80N08S2L-07 Preliminary data OptiMOS =Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • Logic Level VDS 75 V RDS on max. SMD version 6.8 mΩ ID 80 A P-TO263-3-2 •=175°C operating temperature P-TO220-3-1


    Original     		SPP80N08S2L-07 SPB80N08S2L-07 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67060-S6015 2N08L07 P-TO263-3-2 67a smd 2n08l07 2N08L07 POWER SPP80N08S2L-07 "2N08L07" smd diode 67A BR 303 2n08l07 marking s6016 smd 67a PDF

    CS5253

    Abstract: CS5253B-8 EZ1582 3pin transistor 313 transistor 313 smd
    Text: CS5253B-8 3.0 A LDO 5-Pin 2.5 V Fixed Linear Regulator for Remote Sense Applications This new very low dropout linear regulator reduces total power dissipation in the application. To achieve very low dropout, the internal pass transistor is powered separately from the control


    Original     		CS5253B-8 CS5253B r14525 CS5253 CS5253B-8 EZ1582 3pin transistor 313 transistor 313 smd PDF

    13n03la

    Abstract: 13n03l 13N03 Q67042-S4160 S4160 equivalent IPD13N03LA s4160 SMD MARKING CODE transistor IPU13N03LA JESD22
    Text: IPD13N03LA IPU13N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target applications V DS 25 V R DS on),max (SMD version) 13 mΩ ID 30 A • N-channel • Logic level


    Original     		IPD13N03LA IPU13N03LA P-TO252-3-11 P-TO251-3-21 Q67042-S4159 13N03LA 13n03la 13n03l 13N03 Q67042-S4160 S4160 equivalent IPD13N03LA s4160 SMD MARKING CODE transistor IPU13N03LA JESD22 PDF

    14N03L

    Abstract: 14N03
    Text: IPB14N03LA IPI14N03LA, IPP14N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target applications V DS 25 V R DS on),max (SMD version) 13.6 mΩ ID 30 A • N-channel - Logic level


    Original     		IPB14N03LA IPI14N03LA, IPP14N03LA P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 IPI14N03LA P-TO263-3-2 14N03L 14N03 PDF

    14N03LA

    Abstract: 14N03L 14N03 PG-TO263-3-2 PG-TO-263-3-2 IPB14N03LA JESD22
    Text: IPB14N03LA G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 13.6 mΩ ID 30 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPB14N03LA PG-TO263-3-2 14N03LA 14N03LA 14N03L 14N03 PG-TO263-3-2 PG-TO-263-3-2 JESD22 PDF

    14N03L

    Abstract: 14N03LA 14N03
    Text: IPB14N03LA IPI14N03LA, IPP14N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target applications V DS 25 V R DS on),max (SMD version) 13.6 mΩ ID 30 A • N-channel - Logic level


    Original     		IPB14N03LA IPI14N03LA, IPP14N03LA P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 IPI14N03LA P-TO263-3-2 14N03L 14N03LA 14N03 PDF

    IPB14N03LA

    Abstract: 14N03 14N03LA smd code D24 SMD CODE d20
    Text: IPB14N03LA G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 13.6 mΩ ID 30 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPB14N03LA PG-TO263-3-2 Q67042-S4156 14N03LA 14N03 14N03LA smd code D24 SMD CODE d20 PDF

    TPSD336K025R0100

    Abstract: 1SMB100AT3G
    Text: NCP1083WIRGEVB Compact, High Efficiency, 30 W Reference Platform, Supporting Wide Auxiliary Input Voltage, with the NCP1083 Evaluation Board User's Manual http://onsemi.com EVAL BOARD USER’S MANUAL Board Details The NCP1083WIRGEVB implements a PoE module


    Original     		NCP1083WIRGEVB NCP1083 NCP1083WIRGEVB IEEE802 EVBUM2029/D TPSD336K025R0100 1SMB100AT3G PDF