smd diode marking JC
Abstract: marking JC diode smd diode JC smd marking T1 marking JTp JC SMD marking JC BAL74W JTp smd JC SMD DIODE
Text: Diodes SMD Type High-speed diode BAL74W Features Small plastic SMD package High switching speed: max. 4 ns Continuous reverse voltage:max. 75 V Continuous reverse voltage:max. 85 V Repetitive peak forward current:max. 500 mA. Absolute Maximum Ratings Ta = 25
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BAL74W
smd diode marking JC
marking JC diode
smd diode JC
smd marking T1
marking JTp
JC SMD
marking JC
BAL74W
JTp smd
JC SMD DIODE
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DIODE SMD 10A
Abstract: smd diode 0.5A fast diode super fast smd marking XF diode T3 Marking DC AC SINE WAVE CONVERTER smd mk SMD DIODE BOOK
Text: Super Fast Recovery Diode Twin Diode m tm OUTLINE Package : STO-220 DF10LC30 U n it-m m W eight 1.5g T y p U '^àLÌ°-(M ) 10.2 300V 10A Feature • SMD • SMD •e y -rx • Low Noise • trr=30ns • trr=30ns 4.7 Main Use ’ 7 ,-f • Switching Regulator
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DF10LC30
STO-220
DIODE SMD 10A
smd diode 0.5A fast
diode super fast
smd marking XF
diode T3 Marking
DC AC SINE WAVE CONVERTER
smd mk
SMD DIODE BOOK
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KO3402
Abstract: equivalent smd mosfet N-CHANNEL MOSFET 30V 2A SOT-23 DIODE smd 434 smd 4A data smd diode JC smd transistor ja AO3402 mosfet vgs 5v iGSS 80 nA Vgs 0v
Text: MOSFET IC SMD Type N-Channel Enhancement Mode Field Effect Transistor KO3402 AO3402 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 55m (VGS = 10V) RDS(ON) 70m (VGS = 4.5V) RDS(ON) 110m 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 +0.1 0.97-0.1 RDS(ON) 0.55 ID = 4 A
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KO3402
AO3402)
OT-23
equivalent smd mosfet
N-CHANNEL MOSFET 30V 2A SOT-23
DIODE smd 434
smd 4A data
smd diode JC
smd transistor ja
AO3402
mosfet vgs 5v
iGSS 80 nA Vgs 0v
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smd diode marking JC
Abstract: DIODE BJE DIODE BJE smd marking JC diode df30sc3 smd marking 5G DF30SC3ML hm marking smd DIODE SHINDENGEN DIODE sto220
Text: Schottky Barrier Diode Twin Diode m n m DF30SC3ML o u tlin e Unit I mm Weight 1.5« Typ Package ! STO-220 0 7h£9(M ) 30V 30A Feature • SMD • SMD 0 45 V • < S V f= . • P rrsm 0 45V • Low V f= . 7 ’K 3 > î / x (S K î Polarity • P r r s m R a t in g
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DF30SC3ML
STO-220
smd diode marking JC
DIODE BJE
DIODE BJE smd
marking JC diode
df30sc3
smd marking 5G
DF30SC3ML
hm marking smd DIODE
SHINDENGEN DIODE
sto220
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STPS20100CG
Abstract: smd diode marking sim
Text: ^ 7 SGS-THOMSON k7 £ [MMMCTEMffiël STPS201OOCG STPS20100CG-1 HIGH VOLTAGE POWER SCHOTTKY RECTIFIERS MAIN PRODUCT CHARACTERISTICS iF A V 2 X 10A VRRM 100V Vf (typ) 0.60V A2 FEATURES AND BENEFITS . • ■ ■ NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP
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STPS201OOCG
STPS20100CG-1
STPS20100CG
smd diode marking sim
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smd transistor 2A
Abstract: SMD Transistor nc
Text: Transistors IC SMD Type 300V N-Channel MOSFET KQB3N30 TO-263 3.2A, 300 V. RDS ON = 2.2 1 .2 7 -0+ 0.1.1 Features @ VGS = 10 V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Fast switching 0.1max +0.1 1.27-0.1 lmproved dv/dt capability +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2
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KQB3N30
O-263
smd transistor 2A
SMD Transistor nc
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diode ja
Abstract: smd transistor nc 61 78 DIODE SMD SMD Transistor nc KQB630
Text: Transistors IC SMD Type 200V N-Channel MOSFET KQB630 TO-263 9A, 200 V. RDS ON = 0.4 1 .2 7 -0+ 0.1.1 Features @ VGS = 10 V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Low gate charge (typical 19nC) 5 .2 8 -0+ 0.2.2 lmproved dv/dt capability 0.1max +0.1 1.27-0.1
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KQB630
O-263
Curr60
diode ja
smd transistor nc 61
78 DIODE SMD
SMD Transistor nc
KQB630
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SMD Transistor nc
Abstract: No abstract text available
Text: Transistors IC SMD Type 500V N-Channel MOSFET KQB4N50 1 .2 7 -0+ 0.1.1 TO-263 Features 3.4A, 500 V. RDS ON = 2.7 @ VGS = 10 V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 100% avalanche tested lmproved dv/dt capability 0.1max +0.1 1.27-0.1 +0.1 0.81-0.1
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KQB4N50
O-263
SMD Transistor nc
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smd transistor 2A
Abstract: SMD Transistor nc
Text: Transistors IC SMD Type 600V N-Channel MOSFET KQB2N60 TO-263 2.4A, 600 V. RDS ON = 4.7 1 .2 7 -0+ 0.1.1 Features @ VGS = 10 V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Fast switching 0.1max +0.1 1.27-0.1 lmproved dv/dt capability +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2
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KQB2N60
O-263
smd transistor 2A
SMD Transistor nc
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smd transistor 26
Abstract: SMD Transistor nc L378
Text: Transistors IC SMD Type 300V N-Channel MOSFET KQB2N30 TO-263 2.1A, 300 V. RDS ON = 3.7 1 .2 7 -0+ 0.1.1 Features @ VGS = 10 V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 lmproved dv/dt capability 0.1max +0.1 1.27-0.1 100% avalanche tested +0.1 0.81-0.1
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KQB2N30
O-263
smd transistor 26
SMD Transistor nc
L378
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SMD Transistor nc
Abstract: VOLTAGE SUPPRESSOR SMD KDB7045L suppressor diode smd
Text: Transistors IC SMD Type N-Channel Logic Level PowerTrench MOSFET KDB7045L TO-263 Unit: mm 100 A, 30 V. RDS ON = 0.0045 RDS(ON) = 0.006 1 .2 7 -0+ 0.1.1 Features @ VGS = 10 V +0.1 1.27-0.1 +0.2 4.57-0.2 @ VGS = 4.5 V High performance trench technology for extremely low RDS(ON)
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KDB7045L
O-263
SMD Transistor nc
VOLTAGE SUPPRESSOR SMD
KDB7045L
suppressor diode smd
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification KDB7045L TO-263 Unit: mm 100 A, 30 V. RDS ON = 0.0045 RDS(ON) = 0.006 1 .2 7 -0+ 0.1.1 Features @ VGS = 10 V +0.1 1.27-0.1 +0.2 4.57-0.2 @ VGS = 4.5 V High performance trench technology for extremely low RDS(ON)
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KDB7045L
O-263
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SMD Transistor nc
Abstract: TLV300
Text: Transistors IC SMD Type 200V N-Channel MOSFET KQB5N20 TO-263 4.5A, 200 V. RDS ON = 1.2 1 .2 7 -0+ 0.1.1 Features @ VGS = 10 V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 lmproved dv/dt capability 0.1max +0.1 1.27-0.1 100% avalanche tested +0.1 0.81-0.1
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KQB5N20
O-263
SMD Transistor nc
TLV300
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diode 6t6
Abstract: SMD TRANSISTOR 12a P5 smd transistor STTA1206M diode smd 600V soft recovery smd diode 600v 1a smd transistor xf SMD a7 Transistor smd transistor A7 s 22
Text: f Z ^ 7 7 # S G S -T H O M S O N STTA _ 1206M ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS If av 12A V rrm 600V trr (typ) 28ns V f (max) 1.5V FEATURES AND BENEFITS • SPECIFIC TO “FREEWHEEL MODE” OPERA TIONS: Freewheel or Booster Diode.
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STTA1206M
00b0G7fl
diode 6t6
SMD TRANSISTOR 12a
P5 smd transistor
STTA1206M
diode smd 600V soft recovery
smd diode 600v 1a
smd transistor xf
SMD a7 Transistor
smd transistor A7 s 22
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24 V 20 A diode
Abstract: smd diode 106 smd 1C 78 DIODE SMD SMD Dual N-Channel Logic Level PowerTrench MOSFET
Text: IC IC SMD Type Dual N-Channel Logic Level PowerTrench MOSFET KDS6910 Features 7.5 A, 30 V. RDS ON = 13m RDS(ON) = 17m @ VGS = 10 V @ VGS =4.5V Low gate charge Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability
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KDS6910
24 V 20 A diode
smd diode 106
smd 1C
78 DIODE SMD
SMD Dual N-Channel Logic Level PowerTrench MOSFET
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type N-Channel PowerTrenchTMMOSFET KDB5690 1 .2 7 -0+ 0.1.1 TO-263 Features @ VGS = 10 V 5 .2 8 -0+ 0.2.2 Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High performance trench technology for extremely low RDS ON .
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KDB5690
O-263
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SMD Transistor nc
Abstract: No abstract text available
Text: Transistors IC SMD Type 500V N-Channel MOSFET KQB9N50 TO-263 9A, 500 V. RDS ON = 0.73 1 .2 7 -0+ 0.1.1 Features @ VGS = 10 V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Fast switching 0.1max +0.1 1.27-0.1 lmproved dv/dt capability +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2
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KQB9N50
O-263
SMD Transistor nc
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type 500V N-Channel MOSFET KQB2N50 TO-263 2.1A, 500 V. RDS ON = 5.3 1 .2 7 -0+ 0.1.1 Features @ VGS = 10 V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Low gate charge (typical 6.0nC) 5 .2 8 -0+ 0.2.2 lmproved dv/dt capability 0.1max +0.1 1.27-0.1
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KQB2N50
O-263
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type 600V N-Channel MOSFET KQB5N60 TO-263 Unit: mm 5.0A, 600 V. RDS ON = 2.0 1 .2 7 -0+ 0.1.1 Features @ VGS = 10 V Low gate charge (typical 16nC) +0.1 1.27-0.1 +0.2 4.57-0.2 100% avalanche tested 5 .2 8 -0+ 0.2.2 lmproved dv/dt capability
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KQB5N60
O-263
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F00002A
Abstract: SFF70N04
Text: SFF70N04 SERIES SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com 70 AMP / 40 VOLTS 0.010 Ω N-CHANNEL POWER MOSFET DESIGNER'S DATA SHEET Part Number /Ordering Information
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SFF70N04
SFF70N04
300us,
SFF70N04S
MIL-PRF-19500.
F00002A
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type HEXFET Power MOSFET KRF1302S 1 .2 7 -0+ 0.1.1 TO-263 Features Advanced Process Technology Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Operating Temperature 0.1max +0.1 1.27-0.1 Repetitive Avalanche Allowed up to Tjmax +0.1 0.81-0.1 2.54 2.54
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KRF1302S
O-263
11gate
22drain
33source
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ld smd transistor
Abstract: dsa0023459 KRF9610S
Text: Transistors IC SMD Type HEXFET Power MOSFET KRF9610S TO-263 Unit: mm 1 .2 7 -0+ 0.1.1 Features Surface Mount +0.1 1.27-0.1 +0.2 4.57-0.2 Available in Tape & Reel 5 .2 8 -0+ 0.2.2 Simple Drive Requirements 0.1max +0.1 1.27-0.1 Fast Switching +0.1 0.81-0.1 2.54
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KRF9610S
O-263
ld smd transistor
dsa0023459
KRF9610S
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type 400V N-Channel MOSFET KQB3N40 TO-263 Features @ VGS = 10 V 1 .2 7 -0+ 0.1.1 2.5A, 400 V. RDS ON = 3.4 Low gate charge (typical 6.0nC) Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 100% avalanche tested 0.1max +0.1 1.27-0.1 +0.1 0.81-0.1 2.54
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KQB3N40
O-263
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type 700V N-Channel MOSFET KQB6N70 TO-263 Unit: mm 6.2A, 700 V. RDS ON = 1.5 1 .2 7 -0+ 0.1.1 Features @ VGS = 10 V Low gate charge (typical 130nC) +0.1 1.27-0.1 +0.2 4.57-0.2 100% avalanche tested 0.1max +0.1 1.27-0.1 +0.1 0.81-0.1 2.54
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KQB6N70
O-263
130nC)
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