JPP-95
Abstract: t3.15A/250V optocoupler 356T TEA1733 smd diode MARKING U3 SOD123 2KBP206G NCC KY NCC kmg smd diode GW t3.15A/250V fuse
Text: UM10385 GreenChip 65 W TEA1733 L T demo board Rev. 02 — 2 June 2010 User manual Document information Info Content Keywords Notebook adapter, TEA1733(L)T, Low standby power, High efficiency, fixed frequency flyback, jitter Abstract This manual provides the specification, schematics, and Printed-Circuit
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UM10385
TEA1733
JPP-95
t3.15A/250V
optocoupler 356T
smd diode MARKING U3 SOD123
2KBP206G
NCC KY
NCC kmg
smd diode GW
t3.15A/250V fuse
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Untitled
Abstract: No abstract text available
Text: UM10421 GreenChip 65 W TEA1733LT/T printer reference board Rev. 1 — 17 December 2010 User manual Document information Info Content Keywords Printer adapter, TEA1733LT/T, low standby power, high-efficiency, fixed frequency flyback, jitter Abstract This manual provides the specification, schematics and Printed-Circuit
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UM10421
TEA1733LT/T
TEA1733LT/T,
AN10868
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smd JS
Abstract: smd transistor js smd diode marking ja smd diode JS diode DIODE 630 DIODE JS diode marking ja DIODE SMD 55 ja smd
Text: Diodes SMD Type Silicon Schottky Diode BAT62-07W SOT-343 Unit: mm Features Low barrier diode for detectors up to GHz frequencies. Absolute Maxim um Ratings Ta = 25 Symbol Value Unit Diode reverse voltage Parameter VR 40 V Forward current IF 20 mA P tot 100
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BAT62-07W
OT-343
smd JS
smd transistor js
smd diode marking ja
smd diode JS
diode
DIODE 630
DIODE JS
diode marking ja
DIODE SMD 55
ja smd
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smd JS
Abstract: smd diode marking ja diode js smd transistor js 650 DIODE k 650 smd diode JS smd diode nh BAT62 ja smd
Text: Diodes SMD Type Silicon Schottky Diode BAT62 Unit: mm Features Low barrier diode for detectors up to GHz frequencies. Absolute Maxim um Ratings Ta = 25 Param eter Sym bol Value Unit VR 40 V Reverse voltage Forward current Total power dissipation, T S 85 Junction tem perature
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BAT62
smd JS
smd diode marking ja
diode js
smd transistor js
650 DIODE
k 650
smd diode JS
smd diode nh
BAT62
ja smd
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smd diode UM 07
Abstract: diode IR switch SILICON SWITCHING DIODE BAR65-07 smd rf transistor marking pindiode switch smd diode UM 09 smd diode UM 08
Text: Diodes SMD Type Silicon RF Switching Diode BAR65-07 Unit: mm Features Low loss, low capacitance PIN-Diode Band switch for TV-tuners Series diode for mobile communications transmit-receive switch Unconnected pair Absolute M axim um R atings T a = 25 P aram eter
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BAR65-07
smd diode UM 07
diode
IR switch
SILICON SWITCHING DIODE
BAR65-07
smd rf transistor marking
pindiode switch
smd diode UM 09
smd diode UM 08
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smd JS
Abstract: smd JS 3 diode smd transistor js DIODE JS marking bbs diode sot 100 mA diode diode ja smd marking SOT343 smd diode marking ja
Text: Diodes SMD Type Silicon RF Switching Diode BAR81W SOT-343 Unit: mm Features Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss Absolute Maxim um Ratings Ta = 25 Param eter Sym bol Value Unit VR 30 V IF 100 mA P tot 100
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BAR81W
OT-343
smd JS
smd JS 3
diode
smd transistor js
DIODE JS
marking bbs diode sot
100 mA diode
diode ja
smd marking SOT343
smd diode marking ja
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smd diode marking Av
Abstract: 54s diode BAT17-05W "BAT17" marking 1AV BAT17-04W BAT17-06W BAT17-04 1AV marking
Text: Diodes SMD Type Silicon Schottky Diode BAT17-04W,BAT17-05W,BAT17-06W Features For mixer applications in VHF/UHF range For high-speed switching application Absolute M axim um Ratings Ta = 25 Param eter Diode reverse voltage Sym bol Value Unit VR 4 V IF 130
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BAT17-04W
BAT17-05W
BAT17-06W
smd diode marking Av
54s diode
"BAT17"
marking 1AV
BAT17-06W
BAT17-04
1AV marking
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318 MARKING DIODE
Abstract: smd rf transistor marking BAT68-04W BAT68-05W BAT68-06W bat68
Text: Diodes SMD Type Silicon Schottky Diode BAT68-04W,BAT68-05W,BAT68-06W Features For mixer applications in VHF/UHF range For high-speed switching application Absolute M axim um Ratings Ta = 25 Param eter Sym bol Value Unit Diode reverse voltage VR 8 V Forward current
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BAT68-04W
BAT68-05W
BAT68-06W
BAT68-04W
BAT68-05W
318 MARKING DIODE
smd rf transistor marking
BAT68-06W
bat68
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smd diode UM
Abstract: SMD 3E marking 3e smd diode marking um "Schottky Barrier Diode" Schottky RB717F
Text: Diodes SMD Type Schottky barrier diode RB717F Features Small mold type. UMD3 High reliability. Absolute Maxim um Ratings Ta = 25 Param eter Sym bol Lim its Unit V RM 40 V Reverse voltage (DC) VR 40 V Average rectified forward current * IO 30 mA I FSM 200
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RB717F
smd diode UM
SMD 3E
marking 3e
smd diode marking um
"Schottky Barrier Diode"
Schottky
RB717F
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3D smd marking
Abstract: smd diode UM smd diode marking um SHOTTKY diode SMD marking 3D smd marking 3d SHOTTKY DIODE SMD MARKING 3D SMD 3D diode shottky
Text: Diodes SMD Type Shottky barrier diode RB715F Features Small mold type. UMD3 High reliability. Absolute Maxim um Ratings Ta = 25 Param eter Reverse voltage (repetitive peak) Sym bol Lim its Unit V RM 40 V Reverse voltage (DC) VR 40 V Average rectified forward current
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RB715F
3D smd marking
smd diode UM
smd diode marking um
SHOTTKY diode SMD
marking 3D smd
marking 3d
SHOTTKY DIODE
SMD MARKING 3D
SMD 3D diode
shottky
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smd diode marking 47s
Abstract: transistor marking 47s smd diode marking 1P smd marking 47s diode K 345 Schottky Diode smd rf transistor marking BAS40-07W diode 345
Text: Diodes SMD Type Silicon Schottky Diode BAS40-07W SOT-343 Unit: mm Features General-purpose diode for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing A bsolute M axim um R atings T a = 25 P aram eter D iode reverse voltage
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BAS40-07W
OT-343
smd diode marking 47s
transistor marking 47s
smd diode marking 1P
smd marking 47s
diode
K 345
Schottky Diode
smd rf transistor marking
BAS40-07W
diode 345
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TEA1703
Abstract: transistor smd marking m6
Text: UM10437 GreenChip 65 W TEA1738LT/T and TEA1703 demo board Rev. 1 — 28 February 2011 User manual Document information Info Content Keywords Notebook adapter, TEA1738LT/T, TEA1703, fixed frequency, ultra-low standby power, high-efficiency, slim line Abstract
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UM10437
TEA1738LT/T
TEA1703
TEA1738LT/T,
TEA1703,
transistor smd marking m6
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smd JS
Abstract: smd marking S9 BAT14-099 smd JS 5 marking s9 DIODE JS smd transistor js BAT14 bat14-099 data sheet smd rf transistor marking
Text: Diodes SMD Type Silicon Dual Schottky Diode BAT14-099 Unit: mm Features DBS mixer application to 12 GHz Low noise figure Medium barrier type Absolute M axim um Ratings Ta = 25 Param eter Sym bol Value Unit Reverse voltage VR 4 V Forward current IF 90 mA 55
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BAT14-099
smd JS
smd marking S9
BAT14-099
smd JS 5
marking s9
DIODE JS
smd transistor js
BAT14
bat14-099 data sheet
smd rf transistor marking
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sym 435
Abstract: smd rf transistor marking BAT68W smd diode UM 65 A
Text: Diodes SMD Type Silicon Schottky Diodes BAT68W Features For mixer applications in the VHF/UHF range For high speed switching Absolute M axim um Ratings Ta = 25 Param eter Sym bol Value Unit Diode reverse voltage VR 8 V Forward current IF 150 mA P tot 150 mW
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BAT68W
sym 435
smd rf transistor marking
BAT68W
smd diode UM 65 A
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BAT68-03W
Abstract: 318 MARKING DIODE
Text: Diodes SMD Type Silicon Schottky Diode BAT68-03W SOD-323 +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm +0.1 1.3-0.1 Features For mixer applications in the VHF/UHF range +0.1 2.6-0.1 1.0max For high speed switching 0.375 +0.05 0.1-0.02 0.475 Absolute M axim um R atings Ta = 25
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BAT68-03W
OD-323
BAT68-03W
318 MARKING DIODE
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BAS125
Abstract: SMD DIODE MARKING 14s BAS125-04W BAS125-05W BAS125-06W BAS125W
Text: Diodes SMD Type Silicon Schottky Diodes BAS125W;BAS125-04W BAS125-05W;BAS125-06W Features For low-loss, fast-recovery, meter protection, bias isolation and clamping application Integrated diffused guard ring Low forward voltage Absolute Maxim um Ratings Ta = 25
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BAS125W
BAS125-04W
BAS125-05W
BAS125-06W
BAS125W
BAS125
SMD DIODE MARKING 14s
BAS125-04W
BAS125-06W
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RB501V-40
Abstract: No abstract text available
Text: Diodes SMD Type Schottky barrier diode RB501V-40 SOD-323 +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm +0.1 1.3-0.1 Features Small surface mounting type. UMD2 +0.1 2.6-0.1 1.0max Low VF.(VF = 0.43V Typ.at 100mA) High reliability. 0.375 +0.05 0.1-0.02
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RB501V-40
OD-323
100mA)
RB501V-40
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RB751V-40
Abstract: No abstract text available
Text: Diodes SMD Type Schottky barrier diode RB751V-40 SOD-323 +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm +0.1 1.3-0.1 Features Small surface mounting type. EMD2,UMD2 +0.1 2.6-0.1 1.0max Low reverse current and low forward voltage. High reliability. 0.375
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RB751V-40
OD-323
RB751V-40
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1SS380
Abstract: No abstract text available
Text: Diodes SMD Type SWITCHING DIODE 1SS380 SOD-323 +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm +0.1 1.3-0.1 Features Ultra small mold type. UMD2 +0.1 2.6-0.1 1.0max High reliability. 0.375 +0.05 0.1-0.02 0.475 Absolute Maximum Ratings Ta = 25 Paremeter
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1SS380
OD-323
Forwa25
1SS380
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Untitled
Abstract: No abstract text available
Text: Diodes SMD Type Silicon RF Switching Diodes BAR81 Unit: mm Features Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss A bsolute M axim um R atings T a = 25 S ym bol V alue U nit D iode revers e voltage P aram eter VR
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BAR81
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SMD MARKING P3
Abstract: transistor marking p3 marking p3 smd rf transistor marking HVU133 marking SMD P3
Text: Diodes SMD Type Silicon Epitaxial Planar Pin Diode HVU133 SOD-323 +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm +0.1 1.3-0.1 Features Low capacitance. C=1.0pF max +0.1 2.6-0.1 Low forward resistance. (rf=0.7 1.0max max) 0.375 +0.05 0.1-0.02 0.475 A bsolute M axim um R atings T a = 25
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HVU133
OD-323
SMD MARKING P3
transistor marking p3
marking p3
smd rf transistor marking
HVU133
marking SMD P3
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smd marking 35
Abstract: 1SS378 smd diode UM smd diode marking um smd diode UM 85
Text: Diodes SMD Type HIGH SWITCHING DIODE 1SS378 Features Low forward voltage:VF 3 = 0.23 V(Typ) @ IF = 5 mA Absolute M axim um Ratings Ta = 25 Param eter Maxim um (peak) reverse voltage Sym bol Rating Unit V RM 85 V Reverse voltage VR 80 V Maxim um (peak) forward current
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1SS378
smd marking 35
1SS378
smd diode UM
smd diode marking um
smd diode UM 85
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RB520S-30
Abstract: No abstract text available
Text: Diodes SMD Type Schottky barrier diode RB520S-30 SOD-523 +0.05 0.3-0.05 Unit: mm 1.2 +0.1 -0.1 +0.05 0.8-0.05 Features Ultra Small mold type. EMD2 + +0.1 0.6-0.1 - Low IR. High reliability. +0.1 1.6-0.1 +0.05 0.1-0.02 0.07max 0.77max Absolute Maxim um Ratings Ta = 25
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RB520S-30
OD-523
07max
77max
RB520S-30
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Untitled
Abstract: No abstract text available
Text: Diodes SMD Type HIGH SPEED SWITCHING DIODE 1SS372 Features Low forward voltage:VF = 0.23 V Typ @ IF = 5mA Absolute M axim um R atings T a = 25 Param eter M axim um (peak) reverse voltage Sym bol Rating Unit V RM 15 V Reverse voltage VR 10 V M axim um (peak) forward current
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1SS372
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