smd diode S4
Abstract: No abstract text available
Text: GWM 220-004P3 Three phase full Bridge VDSS = 40 V ID25 = 190 A RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings
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220-004P3
100-01X1-SMD
220-004P3
20070906c
smd diode S4
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smd diode g6
Abstract: smd S4 36 SMD diode MARKING CODE g6 smd g5
Text: GWM 220-004P3 Three phase full Bridge VDSS = 40 V ID25 = 190 A RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings
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220-004P3
220-003P3-SMD
220-004P3
20080527e
smd diode g6
smd S4 36
SMD diode MARKING CODE g6
smd g5
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smd diode S4
Abstract: smd diode code g3 SMD MARKING CODE 503 K smd diode S6 S4 DIODE S6 diode smd diode marking code L2 SMD MARKING g3 smd diode code s6 SMD MARKING g5
Text: GWM 220-004P3 Three phase full Bridge VDSS = 40 V ID25 = 190 A RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings
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220-004P3
diod007
20070628b
220-004P3-SL
220-04P3-BL
220-004P3
smd diode S4
smd diode code g3
SMD MARKING CODE 503 K
smd diode S6
S4 DIODE
S6 diode
smd diode marking code L2
SMD MARKING g3
smd diode code s6
SMD MARKING g5
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smd diode marking code s3 transient
Abstract: smd part marking
Text: GMM3x60-015X2 Three phase full Bridge VDSS = 150 V = 50 A ID25 RDSon typ. = 19 mW with Trench MOSFETs in DCB isolated high current package Preliminary Data L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 S4 S6 L1- L2- L3+ L3 L3- Applications MOSFETs Symbol Conditions
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GMM3x60-015X2
ID110
IF110
20120618a
smd diode marking code s3 transient
smd part marking
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Untitled
Abstract: No abstract text available
Text: GMM3x60-015X2 VDSS = 150 V = 50 A ID25 RDSon typ. = 19 mΩ Three phase full Bridge with Trench MOSFETs in DCB isolated high current package Preliminary Data L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 S4 S6 L1- L2- L3+ L3 L3- Applications MOSFETs Symbol Conditions
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GMM3x60-015X2
ID110
IF110
20120618a
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FT0045A
Abstract: No abstract text available
Text: SSDI is proud to introduce four new radiation tolerant MOSFET products. All of these new devices feature rugged trench technology, low ON-resistance, and SEU / SEGR resistance to LET 38. TX, TXV, and S-level screening is available and based on MIL-PRF-19500. Screening flows are available on request. For more information or to request
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MIL-PRF-19500.
SFR9130S
100kRAD
IRF9130
FT0042A
SFF110P05J
SFF110P05M
SFF110P05S1
O-254
FT0045A
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diode ja
Abstract: smd transistor nc 61 78 DIODE SMD SMD Transistor nc KQB630
Text: Transistors IC SMD Type 200V N-Channel MOSFET KQB630 TO-263 9A, 200 V. RDS ON = 0.4 1 .2 7 -0+ 0.1.1 Features @ VGS = 10 V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Low gate charge (typical 19nC) 5 .2 8 -0+ 0.2.2 lmproved dv/dt capability 0.1max +0.1 1.27-0.1
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KQB630
O-263
Curr60
diode ja
smd transistor nc 61
78 DIODE SMD
SMD Transistor nc
KQB630
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Untitled
Abstract: No abstract text available
Text: MTI 145WX100GD Three phase full Bridge VDSS = 100 V = 190 A ID25 RDSon typ. = 1.7 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 S2 S4 S6 L1- L2- L3- iv Applications MOSFETs Symbol Conditions Maximum Ratings
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145WX100GD
MTI145WX100GD-SMD
MTI145WX100GD
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Untitled
Abstract: No abstract text available
Text: GWM 120-0075P3 Three phase full Bridge VDSS = 75 V ID25 = 125 A RDSon typ. = 3.7 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS
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120-0075P3
20070906c
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Untitled
Abstract: No abstract text available
Text: GWM 120-0075P3 Three phase full Bridge VDSS = 75 V ID25 = 125 A RDSon typ. = 3.7 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS
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120-0075P3
20080527e
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smd diode g6 DIODE S4 39 smd diode
Abstract: smd diode code g6 SMD MARKING CODE s4 GWM 120-0075P3 smd diode code g3 smd diode g6 smd diode S6 Control of Starter-generator DIODE marking S4 57 smd diode g5
Text: GWM 120-0075P3 Three phase full Bridge VDSS = 75 V = 118 A ID25 RDSon typ. = 3.7 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS
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120-0075P3
20081126f
smd diode g6 DIODE S4 39 smd diode
smd diode code g6
SMD MARKING CODE s4
GWM 120-0075P3
smd diode code g3
smd diode g6
smd diode S6
Control of Starter-generator
DIODE marking S4 57
smd diode g5
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smd diode code SL
Abstract: smd diode code mj
Text: GWM 120-0075P3 Three phase full Bridge VDSS = 75 V ID25 = 125 A RDSon typ. = 3.7 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 75 V ± 20
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120-0075P3
20070628b
smd diode code SL
smd diode code mj
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2N06L64
Abstract: IPD15N06S2L-64 2N06L PG-TO252-3-11 2N06L-64
Text: IPD15N06S2L-64 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 64 mΩ ID 19 A • MSL1 up to 260°C peak reflow • 175°C operating temperature
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IPD15N06S2L-64
PG-TO252-3-11
2N06L64
2N06L64
IPD15N06S2L-64
2N06L
PG-TO252-3-11
2N06L-64
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Untitled
Abstract: No abstract text available
Text: IC MOS FET SMD Type SIPMOS Small-Signal-Transistor BSP613P SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Features P-Channel +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 +0.2 6.50-0.2 +0.2 0.90-0.2 +0.3 7.00-0.3 Enhancement mode 4 Avalanche rated dv/dt rated Ideal for fast switching buck converter
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BSP613P
OT-223
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BAS29
Abstract: BAS31 BAS35 MBG440
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D088 BAS29; BAS31; BAS35 General purpose controlled avalanche double diodes Product specification Supersedes data of November 1993 File under Discrete Semiconductors, SC01 1996 Apr 23 Philips Semiconductors
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M3D088
BAS29;
BAS31;
BAS35
BAS29
BAS31
BAS29
BAS31
BAS35
MBG440
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Untitled
Abstract: No abstract text available
Text: PD - 91397D IRHNA7260 JANSR2N7433U 200V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 REF: MIL-PRF-19500/664 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHNA7260 100K Rads (Si) IRHNA3260 300K Rads (Si)
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91397D
IRHNA7260
JANSR2N7433U
MIL-PRF-19500/664
IRHNA3260
JANSF2N7433U
IRHNA4260
JANSG2N7433U
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JANSR2N7432U
Abstract: IRHNA3160 IRHNA4160 IRHNA7160 JANSF2N7432U JANSG2N7432U SMD 51A
Text: PD - 91396E IRHNA7160 JANSR2N7432U 100V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 REF: MIL-PRF-19500/664 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) 0.04Ω 0.04Ω ID QPL Part Number 51A 51A
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91396E
IRHNA7160
JANSR2N7432U
MIL-PRF-19500/664
JANSF2N7432U
IRHNA3160
IRHNA4160
JANSG2N7432U
JANSR2N7432U
IRHNA3160
IRHNA4160
IRHNA7160
JANSF2N7432U
JANSG2N7432U
SMD 51A
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smd diode JC 0p
Abstract: DIODE SMD GEM IXGH24N60AU1S
Text: Hi Per FAST IGBT with Diode IXGH 24N60AU1 IXGH24N60AU1S CES ^C25 v CE sat Combi Pack tfi = = = = 600 V 48 A 2.7 V 275 ns Preliminary data Symbol Test Conditions Maximum Ratings v CES ^ = 25°C to 150°C 600 V v*CGR ^ = 25°C to 150°C; RGE = 1 Mi2 600
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24N60AU1
IXGH24N60AU1S
O-247
24N60AU1S)
24N60AU1S
D94006DE,
smd diode JC 0p
DIODE SMD GEM
IXGH24N60AU1S
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24N60AU1
Abstract: 24n80
Text: HiPerFAST IGBT with Diode IXSH24N60U1/IXSH24N60U1S IXSH24N60 AU1 /IXSH24N60 All 1S v CES ^C25 V v CE sat 600 V 600 V 48 A 48 A 2.2 V 2.7 V Short Circuit SO A Capability Symbol Test Conditions V v CGR Tj = 25°C to 150°C Tj = 25°C to 150°C; ROE = 1 M ii
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IXSH24N60U1/IXSH24N60U1S
IXSH24N60
/IXSH24N60
O-247
24N60U1
24N60U1S
24N60U1
24N69AU1
24N60U1S
24W6QAU1S
24N60AU1
24n80
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n60b
Abstract: n60bu 32N60A
Text: DIXYS HiPerFAST IGBT with Diode IXGH32 N60AU1 IXGH32 N60AU1S IXGH32 N60BU1S Combi Pack VCES ^C25 VCE sat tfi 600 V 600 V 600 V 60 A 60 A 60 A 2.9 V 2.9 V 2.5 V 125 ns 125 ns 80 ns Prelim inary data Symbol Test Conditions Maximum Ratings V CES Tj = 25°C to 150°C
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IXGH32
N60AU1
N60AU1S
N60BU1S
O-247
32N60
32N60AU1)
n60b
n60bu
32N60A
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T0252
Abstract: SMD making code 2f ITS08F06 ITS08F06B ITS08F06G ITS08F06H
Text: ITS08F06 M ITEL Powerline N-Channel IGBT S E M IC O N D U C T O R Advance Information S upersedes February 1998 version, DS4711 -2 .4 The ITS08F06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage
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ITS08F06
DS4711
DS4711-3
ITS08F06
T0252
SMD making code 2f
ITS08F06B
ITS08F06G
ITS08F06H
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Untitled
Abstract: No abstract text available
Text: □IXYS Preliminary data IXGH22N50BU1 IXGH22N50BU1S HiPerFAST IGBT with Diode V CES 500 V 44 A 2.1 V 55 ns ^C 25 V CE(sat)typ Combi Pack ^fi(typ) ?C G f| TO-247 SMD* Symbol Test Conditions V VCGH Ta= 25°C to 150°C v oE Maximum Ratings m T,J = 25°C to 150°C; FU
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IXGH22N50BU1
IXGH22N50BU1S
O-247
4bflb22b
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B81 diode smd
Abstract: b81 004 IXGH20N60BU1 U 244
Text: HiPerFAST IGBT with Diode IXGH20N60BU1 IXGH20N60BU1S v CES ^C25 v CE sat typ *« = = = = 600 40 1.7 100 V A V ns P relim inary data Sym bol Test C onditions v CES v CGR T, = 25°C to 150°C 600 V Tj = 25°C to 150°C; RGE = 1 M£2 600 V Maximum Ratings
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IXGH20N60BU1
IXGH20N60BU1S
O-247
B2-35
B81 diode smd
b81 004
U 244
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IXGH20N60BU1
Abstract: IXGH20N60BU1S HIPERFAST IGBT WITH DIODE IXGH20N60BU1 TO-247 IXYS DIODE SMD GEM TAA 521 D
Text: □ IXYS Preliminary data IXGH20N60BU1 IXGH20N60BU1S HiPerFAST IGBT with Diode V CES ^C 25 V CE(sat)typ Combi Pack *fi(typ) = 600 V = 40 A = 1.7 V = 100 ns TO-247 SMD* Symbol Test Conditions V v CGR Td = 25°C to 150°C Td = 25°C to 150°C; RGE = 1 M£i
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IXGH20N60BU1
IXGH20N60BU1S
O-247
IXGH20N60BU1S
HIPERFAST IGBT WITH DIODE
IXGH20N60BU1 TO-247 IXYS
DIODE SMD GEM
TAA 521 D
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