smd diode UM 07
Abstract: diode IR switch SILICON SWITCHING DIODE BAR65-07 smd rf transistor marking pindiode switch smd diode UM 09 smd diode UM 08
Text: Diodes SMD Type Silicon RF Switching Diode BAR65-07 Unit: mm Features Low loss, low capacitance PIN-Diode Band switch for TV-tuners Series diode for mobile communications transmit-receive switch Unconnected pair Absolute M axim um R atings T a = 25 P aram eter
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BAR65-07
smd diode UM 07
diode
IR switch
SILICON SWITCHING DIODE
BAR65-07
smd rf transistor marking
pindiode switch
smd diode UM 09
smd diode UM 08
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PDF
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smd JS
Abstract: smd transistor js smd diode marking ja smd diode JS diode DIODE 630 DIODE JS diode marking ja DIODE SMD 55 ja smd
Text: Diodes SMD Type Silicon Schottky Diode BAT62-07W SOT-343 Unit: mm Features Low barrier diode for detectors up to GHz frequencies. Absolute Maxim um Ratings Ta = 25 Symbol Value Unit Diode reverse voltage Parameter VR 40 V Forward current IF 20 mA P tot 100
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BAT62-07W
OT-343
smd JS
smd transistor js
smd diode marking ja
smd diode JS
diode
DIODE 630
DIODE JS
diode marking ja
DIODE SMD 55
ja smd
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PDF
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smd diode marking 47s
Abstract: transistor marking 47s smd diode marking 1P smd marking 47s diode K 345 Schottky Diode smd rf transistor marking BAS40-07W diode 345
Text: Diodes SMD Type Silicon Schottky Diode BAS40-07W SOT-343 Unit: mm Features General-purpose diode for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing A bsolute M axim um R atings T a = 25 P aram eter D iode reverse voltage
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BAS40-07W
OT-343
smd diode marking 47s
transistor marking 47s
smd diode marking 1P
smd marking 47s
diode
K 345
Schottky Diode
smd rf transistor marking
BAS40-07W
diode 345
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PDF
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TRANSISTOR SMD MARKING CODE 1K
Abstract: DIODE smd marking code UM 41 2/DIODE smd marking code UM 41
Text: CENTRAL SEMICONDUCTOR SDE D • n ù T ìL B DODOSlb T i f i ■ CEN SMD Zener Diode SO D -80 Case 500m W U.S. Specification Preferred Series The Central Semiconductor CLL5221B Series Silicon Zener Diode is a high quality voltage regulator for use in industrial, commercial,
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OCR Scan
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CLL5221B
OT-143
OT-223
TRANSISTOR SMD MARKING CODE 1K
DIODE smd marking code UM 41
2/DIODE smd marking code UM 41
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PDF
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smd diode UJ 64 A
Abstract: SLD3237VFR 20/SPL1550-10-9-PD SLD3237VF smd diode UM 08 smd diode UM RLCD-M66H-750 RLT905-30G SLD3236VF RLT6650GLI
Text: PRICE LIST 03/2015 Wiedner Hauptstrasse 76, Vienna, Austria EUR USD Tel: +43-1-586 52 430, Fax: +43-1-586 52 43 44 1,00 1,10182 [email protected], www.roithner-laser.com 2015-06-03 last update 2015-06-03 LASER DIODES - UV EUR USD 1-9 pcs. 1-9 pcs.
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RLU4116E,
RLT390-50CMG,
RLT395-50CMG,
RLT400-50CMG,
TH06-1W,
ATU61938489,
AT1212
AT3112
smd diode UJ 64 A
SLD3237VFR
20/SPL1550-10-9-PD
SLD3237VF
smd diode UM 08
smd diode UM
RLCD-M66H-750
RLT905-30G
SLD3236VF
RLT6650GLI
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PDF
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Untitled
Abstract: No abstract text available
Text: OPTEK P roduct B ulletin OPR2100 A u g u st 1996 Six Element SMD Photodiode Array Type OPR2100 - .031 0.8 —^ ( - .130(3.3) r | - .237(6.0) .071(1.8) .213(5.4) .362 x .236 GROUND PLANE* (9.2 x 6.0) r - DIA .0315(0.80) r W ~ I ON SUBSTRATE .354(9.0) .409(10.4)
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OCR Scan
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OPR2100
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PDF
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TRANSISTOR SMD MARKING CODE w6
Abstract: SMD TRANSISTOR MARKING 5H
Text: CENTRAL SEPIICONDUCTOR naoasm 5 DE D 01 5 • SMD Zener Diode SOT-23 Case 350mW cen T - W - o ° \ U.S. Specification Preferred Series The Central Semiconductor CMPZ5221B Series Silicon Zener Diode is a high quality voltage regulator for use in industrial,
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OCR Scan
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OT-23
350mW
CMPZ5221B
OT-143
OT-223
TRANSISTOR SMD MARKING CODE w6
SMD TRANSISTOR MARKING 5H
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PDF
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diode smd ED 17
Abstract: smd diode ED diode smd ed 02 ersa rds 80 ST SMD SCR diode smd ed 25 smd diode ED 47
Text: PRODUCT DATASHEET AAT2610 7-Channel PMU for Digital Still Cameras Ge n e r a l D e scr ipt ion Fe a t u r e s The AAT2610 is a highly int egrat ed power m anagem ent solut ion specifically suit ed for Digit al St ill Cam era DSC syst em s, feat uring seven DC- DC swit ching regulat ors for
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AAT2610
AAT2610
diode smd ED 17
smd diode ED
diode smd ed 02
ersa rds 80
ST SMD SCR
diode smd ed 25
smd diode ED 47
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PDF
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Untitled
Abstract: No abstract text available
Text: PRODUCT DATASHEET AAT1403 SwitchRegTM Serial LED Driver with Filtered PWM and 32 Step S2C Dimming Control Ge n e r a l D e scr ipt ion Fe a t u r e s The AAT1403 is a st ep- up single channel LED driver wit h an input volt age range of 2.7V t o 5.5V. The wide input
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AAT1403
AAT1403
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Untitled
Abstract: No abstract text available
Text: PRODUCT DATASHEET AAT1410 SwitchRegTM Serial LED Driver with Direct PWM and 32 Step S2C Dimming Control Ge n e r a l D e scr ipt ion Fe a t u r e s The AAT1410 is a st ep- up single channel LED driver wit h an input volt age range of 2.7V t o 5.5V. The wide input
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AAT1410
AAT1410
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PDF
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diode smd ED 35
Abstract: No abstract text available
Text: PRODUCT DATASHEET AAT1401 SwitchRegTM Serial LED Driver with Filtered PWM and 32 Step S2C Dimming Control Ge n e r a l D e scr ipt ion Fe a t u r e s The AAT1401 is a st ep- up single channel LED driver wit h an input volt age range of 2.7V t o 5.5V. The wide input
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AAT1401
AAT1401
diode smd ED 35
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PDF
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D 819
Abstract: No abstract text available
Text: □1XYS Preliminary Data Low VCE sat IGBT with Diode High Speed IGBT with Diode Combi Pack V CES IXGH 12N100U1 IXGH 12N100AU1 ^C25 V CE(sat) 1000 V 24 A 3.5 V 1000 V 24 A 4.0 V TO-247 SMD (Note 1) Symbol Test C onditions V CES Tj = 25°C to 150°C 1000 V
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OCR Scan
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12N100U1
12N100AU1
24SBSC
T0-247
D 819
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PDF
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Untitled
Abstract: No abstract text available
Text: IXGH 12N100U1 IXGH 12N100AU1 Low VCE sat IGBT with Diode High Speed IGBT with Diode VCES ^C25 V ¥ CE(sat) 1000 V 1000 V 24 A 24 A 3.5 V 4.0 V TO-247 SMD* E Symbol Test Conditions v CES VcOR Td = 25°C to 150°C T j = 25°C to 150°C; RGE = 1 M H VGES v SBB
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OCR Scan
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12N100U1
12N100AU1
O-247
O-247
-247S
12N100
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PDF
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smd DIODE 3FS
Abstract: IXGH40N30BD 40N30
Text: □ IXYS HiPerFAST IGBT IXGH40N30BD1 IXGH40N30BD1S V CES ^C25 V C E sat 300 V 60 A 2.4 V 75 ns Preliminary data Maximum Ratings Symbol Test Conditions V CES Td = 25°C to 150°C 300 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 300 V V GES Continuous ±20
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OCR Scan
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IXGH40N30BD1
IXGH40N30BD1S
13/10Nm/lb
O-247
Cha55
smd DIODE 3FS
IXGH40N30BD
40N30
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PDF
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Untitled
Abstract: No abstract text available
Text: D 1 X Y S Preliminary data HiPerFAST IGBT with Diode IXGX50N60AU1 IXGX50N60AU1S Combi Pack v CES ^C25 vv CE sat tfi = 600 V = 75 A = 2.7 V = 275 ns TO-247 Hole-less SMD (50N 60AU 1S) Symbol Test Conditions Maximum Ratings v CES T j = 25°C to 150°C 600
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OCR Scan
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IXGX50N60AU1
IXGX50N60AU1S
O-247
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PDF
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ixys ml 075
Abstract: 50N60A
Text: OIXYS HiPerFAST IGBT with Diode IXGX50N60AU1 IXGX50N60AU1S = 600 V = 75 A = 2.7 V = 275 ns 'C E S IC 25 VCE sat fi Preliminary data S ym bol Test C onditions V* CES T j = 2 5 « C to 1 5 0 ° C 600 V V CGR T j = 25°C to 150°C; RGE = 1 M£2 600 V v GES
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OCR Scan
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IXGX50N60AU1
IXGX50N60AU1S
50N60AU1
ixys ml 075
50N60A
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PDF
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SZX05A0A
Abstract: A05 zener SHARP I A05
Text: Z-Power LED X10490 Technical Data Sheet Pb Free Specification SSC-SZX05A0A Rev.02_100816 SSC Drawn Approval Customer Approval Rev. 02 1 August 2010 www.seoulsemicon.com 서식번호 : SSC-QP-7-07-25 (Rev.00) Z-Power LED X10490 Technical Data Sheet [ Contents ]
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X10490
SSC-SZX05A0A
SSC-QP-7-07-25
SZX05A0A
A05 zener
SHARP I A05
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PDF
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BC 247 B
Abstract: IXGH32N60 IXGH32N60CD1 DIODE SMD GEM
Text: □ IXYS ADVANCED TECHNICAL INFORMATION IXGH32N60CD1 IXGH32N60CD1S HiPerFAST IGBT with Diode ^fi typ Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i 600 V V GES Continuous ±20 V V GEM Transient ±30 V ^C25
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OCR Scan
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IXGH32N60CD1
IXGH32N60CD1S
O-247
32N60CD1S)
BC 247 B
IXGH32N60
DIODE SMD GEM
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PDF
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931 diode smd
Abstract: g20n60
Text: □ IXYS V CES IXGH 24N60AU1 IXGH 24N60AU1S ^C25 V CE sat t fi HiPerFAST IGBT with Diode Combi Pack Symbol Test Conditions Maximum Ratings V CES Tj = 25°C to 150°C 600 V V* CGR Tj = 25°C to 150°C; RGE = 1 MÎ2 600 V vWGES Continuous ±20 V V* GEM Transient
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OCR Scan
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24N60AU1
24N60AU1S
O-247
24N60AU1S)
IXGH24N60AU1
IXGH24N60AU1S
4bflb22t.
931 diode smd
g20n60
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PDF
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32N50
Abstract: 30n50
Text: H iPerFET Power M O SFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family IXFH 30N50 IXFH 32N50 p V DSS ^D25 500 V 30 A 0.16 f i 500 V 32 A trr £ 250 ns 0.15 Û DS on Preliminary data Sym bol Test C onditions V DSS Tj = 2 5 °C to 1 5 0 °C
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OCR Scan
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30N50
32N50
32N50
5A/25
6A/25
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PDF
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070N06L
Abstract: PG-TO-220-3 PG-TO220-3 g2ns 070N0 D53A
Text: IPB070N06L G IPP070N06L G OptiMOS Power-Transistor Product Summary Features V DS • For fast switching converters and sync. rectification R DS on ,max • N-channel enhancement - logic level SMD version ID 60 V 6.7 m: 80 A • 175 °C operating temperature
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IPB070N06L
IPP070N06L
PG-TO263-3
PG-TO220-3
070N06L
070N06L
PG-TO-220-3
PG-TO220-3
g2ns
070N0
D53A
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PDF
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igbt to247
Abstract: s9011 IXGH24N60AU1S ixgh24N60
Text: HiPerFAST IGBT with Diode IXGH24N60AU1 IXGH24N60AU1S v CES ^C25 v CE sat t- Symbol Test Conditions v CES v CGR T j = 2 5 °C to 1 5 0 °C 600 V Tj = 25°C to 150°C; RQE = 1 M il 600 V Maximum Ratings v GES Continuous ±20 V v GEM T ransient ±30 V ^C25
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OCR Scan
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IXGH24N60AU1
IXGH24N60AU1S
T0-247
24N60AU1S)
O-247
24N60AU1
B2-41
1XGH24N68AU1
W6H24WWMMl
24N80AU1
igbt to247
s9011
IXGH24N60AU1S
ixgh24N60
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PDF
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smd diode 819
Abstract: 30n60
Text: VCES IXGH30N60BU1 IXGH30N60BU1S ^C25 HiPerFAST IGBT with Diode = — VCE sat = tfi 600 V 60 A 1.8 V 130 ns TO-247 SMD (30N60BU1S) Symbol Test Conditions V CEs Td Maximum Ratings i c (TAB) 25°C to 150°C 600 V V V c G„ Tj = 25°C to 150°C; RGE = 1 MO
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OCR Scan
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IXGH30N60BU1
IXGH30N60BU1S
O-247
30N60BU1S)
typ200
B2-58
smd diode 819
30n60
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PDF
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32N60BU1
Abstract: No abstract text available
Text: HiPerFAST IGBT with Diode IXGH 32N60BU1 IXGH 32N60BU1S v CES ^C25 v CE sat »fl Maximum Ratings Symbol Test Conditions VCEs T j = 25°C to 150°C 600 V VcOR Tj = 25°C to 150°C; ROE = 1 M£2 600 V VGES Continuous ±20 V v GEM T ransient ±30 V ^C25 Tc =25°C
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OCR Scan
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32N60BU1
32N60BU1S
O-247
B2-77
B2-78
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PDF
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