smd JS
Abstract: smd marking S9 BAT14-099 smd JS 5 marking s9 DIODE JS smd transistor js BAT14 bat14-099 data sheet smd rf transistor marking
Text: Diodes SMD Type Silicon Dual Schottky Diode BAT14-099 Unit: mm Features DBS mixer application to 12 GHz Low noise figure Medium barrier type Absolute M axim um Ratings Ta = 25 Param eter Sym bol Value Unit Reverse voltage VR 4 V Forward current IF 90 mA 55
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BAT14-099
smd JS
smd marking S9
BAT14-099
smd JS 5
marking s9
DIODE JS
smd transistor js
BAT14
bat14-099 data sheet
smd rf transistor marking
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smd diode marking Av
Abstract: diode BAT62 SOT-363 marking 05 smd marking AV SOT363 bat62 BAT62-09S smd transistor marking 09S BAT62-08S smd diode UM smd marking AL
Text: Diodes SMD Type Silicon Schottky Diode BAT62-08S;BAT62-09S SOT-363 Unit: mm 0.525 +0.1 1.3-0.1 0.65 +0.15 2.3-0.15 +0.1 1.25-0.1 Features 0.36 Low barrier diode for detectors up to GHz frequencies 0.1max +0.05 0.1-0.02 +0.05 0.95-0.05 +0.1 0.3-0.1 +0.1 2.1-0.1
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BAT62-08S
BAT62-09S
OT-363
BAT62-08S
smd diode marking Av
diode BAT62
SOT-363 marking 05
smd marking AV SOT363
bat62
BAT62-09S
smd transistor marking 09S
smd diode UM
smd marking AL
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Untitled
Abstract: No abstract text available
Text: Diodes SMD Type Product specification BAT14-099 Unit: mm Features DBS mixer application to 12 GHz Low noise figure Medium barrier type Absolute M axim um Ratings Ta = 25 Param eter Sym bol Value Unit Reverse voltage VR 4 V Forward current IF 90 mA 55 P tot
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BAT14-099
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mk06u
Abstract: dil reedrelais KEMA 03 ATEX 2042U relais bistabil smd M21 RM05-4-BV10500 mk08 OPTOKOPPLER PTB 06 ATEX 2042U smd 1C
Text: PRODUKTÜBERSICHT Reed Relais • Reed Sensoren · Reed Schalter www.meder.com AUSWAHLHILFE MEDER electronic Auswahlhilfe Im folgenden Abschnitt stellen wir unsere Standard-Reedprodukte und ihre Spezifikationen in Übersichtsform dar. Diese Produkte repräsentieren nur einen kleinen Teil des
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TRANSISTOR SMD MARKING CODE 1K
Abstract: DIODE smd marking code UM 41 2/DIODE smd marking code UM 41
Text: CENTRAL SEMICONDUCTOR SDE D • n ù T ìL B DODOSlb T i f i ■ CEN SMD Zener Diode SO D -80 Case 500m W U.S. Specification Preferred Series The Central Semiconductor CLL5221B Series Silicon Zener Diode is a high quality voltage regulator for use in industrial, commercial,
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CLL5221B
OT-143
OT-223
TRANSISTOR SMD MARKING CODE 1K
DIODE smd marking code UM 41
2/DIODE smd marking code UM 41
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TRANSISTOR SMD MARKING CODE w6
Abstract: SMD TRANSISTOR MARKING 5H
Text: CENTRAL SEPIICONDUCTOR naoasm 5 DE D 01 5 • SMD Zener Diode SOT-23 Case 350mW cen T - W - o ° \ U.S. Specification Preferred Series The Central Semiconductor CMPZ5221B Series Silicon Zener Diode is a high quality voltage regulator for use in industrial,
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OT-23
350mW
CMPZ5221B
OT-143
OT-223
TRANSISTOR SMD MARKING CODE w6
SMD TRANSISTOR MARKING 5H
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ad 0845
Abstract: 45c smd diode smd diode MS 22 SMD Diode KE
Text: aixYS DSP25 VRRM IFRMS Phase-leg Rectifier Diode 1200/1600 V 2x43 A 2x28 A FAVM r— V n sM V V RRM TO-247 SMD 1200 1600 Type DSP 25-12A DSP 25-16A ~l 4-4 -4 ! r V 1300 1700 TO -247 AD r - w H 1 DSP 25-12AS DSP 25-16AS 2 - i TO-247 SMD TO-247 AD I 3 TAB
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DSP25
O-247
5-12A
5-16A
25-12AS
25-16AS
ad 0845
45c smd diode
smd diode MS 22
SMD Diode KE
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D 819
Abstract: No abstract text available
Text: □1XYS Preliminary Data Low VCE sat IGBT with Diode High Speed IGBT with Diode Combi Pack V CES IXGH 12N100U1 IXGH 12N100AU1 ^C25 V CE(sat) 1000 V 24 A 3.5 V 1000 V 24 A 4.0 V TO-247 SMD (Note 1) Symbol Test C onditions V CES Tj = 25°C to 150°C 1000 V
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12N100U1
12N100AU1
24SBSC
T0-247
D 819
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Untitled
Abstract: No abstract text available
Text: IXGH 12N100U1 IXGH 12N100AU1 Low VCE sat IGBT with Diode High Speed IGBT with Diode VCES ^C25 V ¥ CE(sat) 1000 V 1000 V 24 A 24 A 3.5 V 4.0 V TO-247 SMD* E Symbol Test Conditions v CES VcOR Td = 25°C to 150°C T j = 25°C to 150°C; RGE = 1 M H VGES v SBB
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12N100U1
12N100AU1
O-247
O-247
-247S
12N100
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smd DIODE 3FS
Abstract: IXGH40N30BD 40N30
Text: □ IXYS HiPerFAST IGBT IXGH40N30BD1 IXGH40N30BD1S V CES ^C25 V C E sat 300 V 60 A 2.4 V 75 ns Preliminary data Maximum Ratings Symbol Test Conditions V CES Td = 25°C to 150°C 300 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 300 V V GES Continuous ±20
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IXGH40N30BD1
IXGH40N30BD1S
13/10Nm/lb
O-247
Cha55
smd DIODE 3FS
IXGH40N30BD
40N30
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smd diode JC 0p
Abstract: DIODE SMD GEM IXGH24N60AU1S
Text: Hi Per FAST IGBT with Diode IXGH 24N60AU1 IXGH24N60AU1S CES ^C25 v CE sat Combi Pack tfi = = = = 600 V 48 A 2.7 V 275 ns Preliminary data Symbol Test Conditions Maximum Ratings v CES ^ = 25°C to 150°C 600 V v*CGR ^ = 25°C to 150°C; RGE = 1 Mi2 600
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24N60AU1
IXGH24N60AU1S
O-247
24N60AU1S)
24N60AU1S
D94006DE,
smd diode JC 0p
DIODE SMD GEM
IXGH24N60AU1S
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smd TRANSISTOR code AJ
Abstract: No abstract text available
Text: Whp% H E W LE TT mL'tim PACKARD D ual C hannel L ine R eceiver H erm etic O ptocoupler Technical Data HCPL-1930 HCPL-1931 883B 5962-8957201EC Outline Draw ing DATE CODE - j ( -, SUFFIX LETTER! I i— i— i •*£ Y W X U.S.A. f i i— i CERTIFICATION MARK
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HCPL-1930
HCPL-1931
5962-8957201EC
MIL-STD-1772
QML-MIL-H-38534
MIL-STD-883
HCPL-2602
74LS04
74LSOOQUAD
smd TRANSISTOR code AJ
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5962-8978501PC
Abstract: SMD 5730
Text: W H pì HEW LETT mL'ttM PACKARD Low Input Current, High Gain, Hermetically Sealed Optocoupler 8-pin Dual In-Line Package HCPL-5700 HCPL-5701 883B 5962-8981001PC HCPL-5730 HCPL-5731 (883B) 5962-8978501PC 20 Terminal Leadless Chip Carrier HCPL-6730 HCPL-6731 (883B)
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HCPL-5700
HCPL-5701
5962-8981001PC
HCPL-5730
HCPL-5731
5962-8978501PC
HCPL-6730
HCPL-6731
962-89785022A
MIL-STD-1772
SMD 5730
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Untitled
Abstract: No abstract text available
Text: D 1 X Y S Preliminary data HiPerFAST IGBT with Diode IXGX50N60AU1 IXGX50N60AU1S Combi Pack v CES ^C25 vv CE sat tfi = 600 V = 75 A = 2.7 V = 275 ns TO-247 Hole-less SMD (50N 60AU 1S) Symbol Test Conditions Maximum Ratings v CES T j = 25°C to 150°C 600
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IXGX50N60AU1
IXGX50N60AU1S
O-247
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dual diode LT 5230
Abstract: Diode LT 5230 LT 5230 SMD-5962 lt 6229 lt 6228 HP 2200 optocoupler HCPL5201/883B
Text: thaï EWLETT mL'Hm H P a c k a rd Wide Supply Voltage, High CMR, Hermetically Sealed Optocoupler 8 P in Dual In-Line Package HCPL-5200 HCPL-5201 883B 5962 8876801PC HCPL-5230 HCPL-5231 (883B) 5962 8876901PC 20 Term inal Leadless Chip C arrier HCPL-6230 HCPL-6231 (883B)
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HCPL-5200
HCPL-5201
8876801PC
HCPL-5230
HCPL-5231
8876901PC
HCPL-6230
HCPL-6231
MIL-STD-1772
QML-MIL-H-38534
dual diode LT 5230
Diode LT 5230
LT 5230
SMD-5962
lt 6229
lt 6228
HP 2200 optocoupler
HCPL5201/883B
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VM04
Abstract: smd zener diode code M9
Text: W hnl HEWLETT %Lt JÊ PACKARD AC/DC to Logic Interface Hermetically Sealed Optocouplers Technical Data HCPL-5760 HCPL-5761 883B 5962 8947701PX Features • D ual Marked w ith DESC Standard M ilitary D raw ing • M anufactured and T ested on a MIL-STD-1772
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HCPL-5760
HCPL-5761
8947701PX
MIL-STD-1772
QML-MIL-H-38534,
MIL-H-38534
HCPL-3700
HCPL-576X
VM04
smd zener diode code M9
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BC 247 B
Abstract: IXGH32N60 IXGH32N60CD1 DIODE SMD GEM
Text: □ IXYS ADVANCED TECHNICAL INFORMATION IXGH32N60CD1 IXGH32N60CD1S HiPerFAST IGBT with Diode ^fi typ Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i 600 V V GES Continuous ±20 V V GEM Transient ±30 V ^C25
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IXGH32N60CD1
IXGH32N60CD1S
O-247
32N60CD1S)
BC 247 B
IXGH32N60
DIODE SMD GEM
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931 diode smd
Abstract: g20n60
Text: □ IXYS V CES IXGH 24N60AU1 IXGH 24N60AU1S ^C25 V CE sat t fi HiPerFAST IGBT with Diode Combi Pack Symbol Test Conditions Maximum Ratings V CES Tj = 25°C to 150°C 600 V V* CGR Tj = 25°C to 150°C; RGE = 1 MÎ2 600 V vWGES Continuous ±20 V V* GEM Transient
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24N60AU1
24N60AU1S
O-247
24N60AU1S)
IXGH24N60AU1
IXGH24N60AU1S
4bflb22t.
931 diode smd
g20n60
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32N50
Abstract: 30n50
Text: H iPerFET Power M O SFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family IXFH 30N50 IXFH 32N50 p V DSS ^D25 500 V 30 A 0.16 f i 500 V 32 A trr £ 250 ns 0.15 Û DS on Preliminary data Sym bol Test C onditions V DSS Tj = 2 5 °C to 1 5 0 °C
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30N50
32N50
32N50
5A/25
6A/25
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igbt to247
Abstract: s9011 IXGH24N60AU1S ixgh24N60
Text: HiPerFAST IGBT with Diode IXGH24N60AU1 IXGH24N60AU1S v CES ^C25 v CE sat t- Symbol Test Conditions v CES v CGR T j = 2 5 °C to 1 5 0 °C 600 V Tj = 25°C to 150°C; RQE = 1 M il 600 V Maximum Ratings v GES Continuous ±20 V v GEM T ransient ±30 V ^C25
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IXGH24N60AU1
IXGH24N60AU1S
T0-247
24N60AU1S)
O-247
24N60AU1
B2-41
1XGH24N68AU1
W6H24WWMMl
24N80AU1
igbt to247
s9011
IXGH24N60AU1S
ixgh24N60
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ACTQ14
Abstract: 54ACTQ14 E20A J14A
Text: & Semiconductor 54ACTQ14 Quiet Series Hex Inverter with Schmitt Trigger Input General Description term ined internally by transistor ratios and is essentially in sensitive to tem perature and supply vo ltage variations. The ’A C TQ 14 contains six inverter gates each w ith a Schm itt
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54ACTQ14
ACTQ14
E20A
J14A
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smd diode 819
Abstract: 30n60
Text: VCES IXGH30N60BU1 IXGH30N60BU1S ^C25 HiPerFAST IGBT with Diode = — VCE sat = tfi 600 V 60 A 1.8 V 130 ns TO-247 SMD (30N60BU1S) Symbol Test Conditions V CEs Td Maximum Ratings i c (TAB) 25°C to 150°C 600 V V V c G„ Tj = 25°C to 150°C; RGE = 1 MO
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IXGH30N60BU1
IXGH30N60BU1S
O-247
30N60BU1S)
typ200
B2-58
smd diode 819
30n60
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32N60BU1
Abstract: No abstract text available
Text: HiPerFAST IGBT with Diode IXGH 32N60BU1 IXGH 32N60BU1S v CES ^C25 v CE sat »fl Maximum Ratings Symbol Test Conditions VCEs T j = 25°C to 150°C 600 V VcOR Tj = 25°C to 150°C; ROE = 1 M£2 600 V VGES Continuous ±20 V v GEM T ransient ±30 V ^C25 Tc =25°C
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32N60BU1
32N60BU1S
O-247
B2-77
B2-78
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Untitled
Abstract: No abstract text available
Text: HiPerFAST IGBT with Diode VCES I IXGH22N50BU1 ix g h 22N50BU i s = 500 V = 44 A Preliminary data Symbol Test Conditions Maximum Ratings V VCGfl T, = 25°C to 150°C T , = 25°C to 150°C; RGE = 1 Mi2 500 500 V V VGES VGEM Continuous T ransient ±20 ±30
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IXGH22N50BU1
22N50BU
B2-13
22N50BU1
22NS0BU1S
----------------TVJ-125
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