heft
Abstract: Kondensatoren 0603 0402 siplace durr
Text: Georg Reindl Bulk-Case: ein umweltfreundliches und wirtschaftliches SMD-Verpackungsund Bestückungssystem 1 Schieber Maße in mm 12 ± 0,1 Verschluß 36 - 0,1 Der Trend bei Keramik-ChipKondensatoren und ChipWiderständen, aber auch bei anderen SMD-Bauelementen, geht zu immer kleineren
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fuse 7003409
Abstract: 7006565 7012540 IEC127-3-4 7006563 m10mm 7000134 IEC127-3-3 IEC127-2-3 IEC127-2-2
Text: G-Sicherungseinsätze miniature fuse links Type Inhaltsverzeichnis / Contents Allgemeine Erläuterungen / General Notes 3+4 SMD-Sicherungseinsätze / SMD fuse-links 2,6 mm x 6,1 mm F 2,6 mm x 6,1 mm T 70 169 74, 70 170 74 70 169 75, 70 170 75 Keinstsicherungen / Sub-miniature fuse-links
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IEC127-3-3
IEC127-3)
IEC127-3-4
Teil22
IEC127-2-2
IEC127-2-1
fuse 7003409
7006565
7012540
7006563
m10mm
7000134
IEC127-2-3
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Untitled
Abstract: No abstract text available
Text: BB 659-02V Silicon Tuning Dioden For VHF-TV-tuners High capacitance ratio 2 Low series inductance Low series resistance Extremely small plastic SMD package Excellent uniformity and matching due to 1 "in-line" matching assembly procedure VES05991
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59-02V
VES05991
59-02V
SC-79
Dec-15-2
Dec-15-2000
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SIEMENS AVR GENERATOR
Abstract: SIOV-S20K30 3225 K300 s14 K440 3225 k50 2221 cu3225 K300 datenbuch CU 4032 K 275 G2 3225 k50 S18K250
Text: Inhaltsverzeichnis Bauformen-Übersicht Seite 5 8 Allgemeine technische Angaben 11 Anwendung und Auswahl 29 Varistoren für spezifische Anwendungen 49 Qualität 55 SMD-Varistoren 65 Scheiben-Varistoren 85 Block-Varistoren, Laschen-Varistoren 145 153 Energie-Elemente
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BB659C
Abstract: SCD80 dioden smd
Text: BB659C Silicon Variable Capacitance Diode 2 For VHF/UHF-TV-tuners High capacitance ratio Low series inductance 1 Low series resistance VES05991 Extremely small plastic SMD package Excellent uniformity and matching due to "in-line" matching assembly procedure
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BB659C
VES05991
BB659C
SCD80
Jul-04-2001
SCD80
dioden smd
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PDF
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Untitled
Abstract: No abstract text available
Text: BB 659C Silicon Variable Capacitance Diode 2 For VHF/UHF-TV-tuners High capacitance ratio Low series inductance 1 Low series resistance VES05991 Extremely small plastic SMD package Excellent uniformity and matching due to "in-line" matching assembly procedure
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VES05991
SCD-80
Jan-19-2001
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PDF
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TVS 200 diode
Abstract: tvs-diode TVS Diode SMD Dioden suppressor diode smd 1.5KE440CA 440CA TVS APPLICATION P4KE440CA TGL41-150CA
Text: Überspannungsschutz für Bauteile und Schaltungen mit Hilfe von TVS-Dioden Overvoltage Protection of Devices and Circuits using TVS Diodes Was ist eine TVS Diode? What is a TVS diode? IF VC VBR VWM ID IT VF IPP • Kennlinie wie eine Zenerdiode Curve like Zener diode
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Untitled
Abstract: No abstract text available
Text: SD101B . SD101C SD101B . SD101C Schottky Barrier Diodes Schottky-Barrier Dioden Version 2010-12-06 Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Ø 1.9 40.50 V Glass case Glasgehäuse 3.9 62.5 15 mA DO-35
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SD101B
SD101C
DO-35
OD-27
LL101B.
LL101C
SD101C
SD101B
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LL101B
Abstract: LL101C SD101B SD101C SMD Schottky Dioden
Text: SD101B . SD101C SD101B . SD101C Schottky Barrier Diodes Schottky-Barrier Dioden Version 2010-12-06 Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung 40.50 V Glass case Glasgehäuse 3.9 62.5 Ø 1.9 15 mA DO-35
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SD101B
SD101C
DO-35
OD-27
LL101B.
LL101C
LL101B
LL101C
SD101B
SD101C
SMD Schottky Dioden
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Untitled
Abstract: No abstract text available
Text: SIEMENS AKTIENGESELLSCHAF 51E » • a53SbDS 00M2211 Sflfl » S I E G SIEMENS T-03-0I Schottky-Dioden Schottky Diodes SMD-Bauformen SMD Types Typ Type '/ rrm ^FAV Tj m ax A Vfm V 1RM V mA °c Bestellnummer Ordering code Gehäuse Package Bild Figure LSM 145 G
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a53SbDS
00M2211
T-03-0I
C67047-Z1037-A1
DO-213
C67047-Z1038-A1
DO-215
C67047-Z1039-A1
C67047-Z1040-A1
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SIEMENS BB409
Abstract: bb409
Text: SIEMENS AKTIENGESELLSCHAF bOE » • fi23SbOS 0051403 547 « S I E G SIEMENS 7 Dioden Diodes Varaktor- Tuner- Dioden Varactor (Tuning) Diodes Type Characteristics ( 7 a = 25°C) Cj at Vpj V pF Cj pF at VR V ^Ratio ca Maximum Ratings Wt h V mA Package Lead SMD/
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fi23SbOS
BB419
OD-123
BB409
BB439
OD-323
BB512
BB515
SIEMENS BB409
bb409
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Untitled
Abstract: No abstract text available
Text: Resistor Networks SMD-Networks of series NWS are packaged in S016L-plastic case Gull-wing and combine our proved Metalglaze-Technology with the advantages of surface mounting techniques. The Standard Networks of series NWC with their unique SlP-package comply with all dimensional
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S016L-plastic
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Bat 16-046
Abstract: No abstract text available
Text: SIEMENS AKTIENGESELLSCHAF bGE ]> 7 ^0 3 - / 3 SIEMENS Dioden Diodes Schottky Dioden Schottky Diodes /R at PF fiA Dual 25 100 < 1 .1 0 < 1.00 20 <400 BAS 125-06 (Dual) 25 100 < 1 .1 0 < 1.00 20 <4 0 0 BAS 125-07 (Dual) 25 100 < 1 .1 0 < 1 .0 0 ' 20 4 90 <0.35
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14-099R
15-099R
OT-23
BAL99
Bat 16-046
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marking SH SOT23
Abstract: smd marking 619 BB505B smd marking bb marking 12 SOD123 SOD-123 BB801 BB409 BA 811 SIEMENS marking
Text: SIEMENS AKTIEN 6E SEL LSCHAF 47E D 0235bDS OOebBST T « S I E G NF-Dioden / AF Diodes PIN Diodes Glass Package Type Max. ratine3s 1/r h mA V Marking Fig. nX 50 150 < 50 0.55 1 < 40 100 < 1 DO-35 DHD - 2 20 o 0.92 0.28 1 1 < 0.7 22 100 100 < 1 < 1.1 SOD-123
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0235bDS
DO-35
OD-123
OT-23
marking SH SOT23
smd marking 619
BB505B
smd marking bb
marking 12 SOD123
SOD-123
BB801
BB409
BA 811
SIEMENS marking
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Untitled
Abstract: No abstract text available
Text: SIEMENS AKTIENGESELLSCHÂF bflE » • «235kD5 ODSlMSb SSt B S I E i SIEM EN S T '03' o! Dioden Diodes HF-Schottky-Diode in Beam Lead Technologie RF Schottky Diode in Beam Lead Technology Zero Bias Zero Bias Type BAT 32 Characteristics TA = 25° C Frequency
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235kD5
OT-23
OT-143
11I181I8I88B
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Diode BAV 19
Abstract: No abstract text available
Text: BAV 18.BA V 21 Si-Allzweck-Dioden Small Signal Si-Diodes 200 mA Nominal current Nennstrom 50.200 V Repetitive peak reverse voltage Periodische Spitzensperrspannung ecu ar ffÛX. 01.9 5£ 'f; nax. Svo - h“ 0.56 £ftJ Dimensions / Maße in mm DO-35 Glass case
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DO-35
R0D1RS14
000017S
Diode BAV 19
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Untitled
Abstract: No abstract text available
Text: DAF 811 A /K . DAF 814 A/K Fast Switching Diode Arrays Schnelle Dioden Sätze Nominal power dissipation Verlustleistung 1-1 1.2 W Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case Glasgehäuse 100.400 V 24 x 3 x 5.1 [mm] Weight approx.
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G0174
000017S
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Untitled
Abstract: No abstract text available
Text: IN 4148, IN 4150, IN 4151, IN 4448, Small Signal Si-Diodes Si-Allzwech-Dioden Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung .ÇsO Ct V J 5 0 . ,100 V H Hrgl9 j £ 150 mA nox, Cvo EM Glass case Glasgehäuse DO-35
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DO-35
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Diode 4148 MINIMELF
Abstract: No abstract text available
Text: LL 4148, LL 4150, LL 4151, LL 4448, Si-Allzweck-Dioden für die Oberflächenmontage Surface Mount Small Signal Si-Diodes 150 niA Nominal current Nennstrom 50. 100 V Repetitive peak reverse voltage Periodische Spitzensperrspannung SOD-80 Glass case MiniMELF
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OD-80
R0D1RS14
Diode 4148 MINIMELF
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Untitled
Abstract: No abstract text available
Text: DA 811 A /K . DA 8110 A/K Diode Arrays Dioden Sätze Nominal power dissipation Verlustleistung 1.2 W Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case Glasgehäuse 100. 1000 V 24 x 3 x 5.1 [mm] Weight approx. Gewicht ca. 0,6 g
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G0174
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diode zener 8v2
Abstract: DIODE BZV ZENER DIODES BZV 85 8V2
Text: BZV 58 C 8V2.C 200 5 W Silizium-Leistungs-Z-Dioden Silicon-Power-Z-Diodes m in 8.2.200 V Nominal breakdown voltage Nenn-Arbeitsspannung ^— ±5% Tolerance o f zener voltage Toleranz der Arbeitsspannung j/ 4.5:ai Plastic case Kunststoffgehäuse ~ D0-201
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UL94V-0
D0-201
R0D1RS14
DGG174
000017S
diode zener 8v2
DIODE BZV
ZENER DIODES BZV 85 8V2
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Zener ZPD
Abstract: zpd diode zener diode zpd 6 diode u2 a05 zpd 6.2 zener zpd1-zpd51 MW1 SMD diode MINImelf zener diode smd ZPD47 Zener ZPD 3.3
Text: ZPD 1.ZPD 51 500 mW Silizium-Z-Dioden Silicon-Z-Diodes 0.75.51 V Nominal breakdown voltage Nenn-Arbeitsspannung ±5% Tolerance of zener voltage Toleranz der Arbeitsspannung ECU mox. h j - . , . n ax . ÇvO - K 0.56 DO-35 Glass case Glasgehäuse 0.13 g
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DO-35
000017S
Zener ZPD
zpd diode
zener diode zpd 6
diode u2 a05
zpd 6.2 zener
zpd1-zpd51
MW1 SMD diode
MINImelf zener diode smd
ZPD47
Zener ZPD 3.3
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smd glass dioden
Abstract: No abstract text available
Text: ZMM 1.ZMM 51 500 mW Silizium-Z-Dioden für die Oberflächenmontage Surface mount Silicon-Z-Diodes Nominal breakdown voltage Nenn-Arbeitsspannung 0.75.51 V Tolerance o f zener voltage Toleranz der Arbeitsspannung ±5% Glass case MiniMELF Glasgehäuse MiniMELF
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OD-80
R0D1RS14
smd glass dioden
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Untitled
Abstract: No abstract text available
Text: 1 N 5345 B.1 N 5388 B 5 W Silizium-Leistungs-Z-Dioden Silicon-Power-Z-Diodes Nominal breakdown voltage Nenn-Arbeitsspannung 8.7.200 V Tolerance o f zener voltage Toleranz der Arbeitsspannung ±5% /4 .5 " Plastic case KunststofFgehäuse ~ D0-201 Weight approx.
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D0-201
UL94V-0
0D1RS14
DGG174
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