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    SMD GP 113 Search Results

    SMD GP 113 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLM15PX121BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 120ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX181SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 180ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM21HE802SN1L Murata Manufacturing Co Ltd FB SMD 0805inch 8000ohm NONAUTO Visit Murata Manufacturing Co Ltd
    BLM15PX330BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 33ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX600SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 60ohm POWRTRN Visit Murata Manufacturing Co Ltd

    SMD GP 113 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    smd code book

    Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
    Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ


    Original     		PDF OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes

    9452 smd

    Abstract: No abstract text available
    Text: < High-power GaAs FET small signal gain stage > MGF0916A L & S BAND / 0.2W SMD non - matched DESCRIPTION The MGF0916A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=23dBm(TYP.) @f=1.9GHz,Pin=5dBm


    Original     		PDF MGF0916A MGF0916A 23dBm 100mA 50pcs) 9452 smd

    Untitled

    Abstract: No abstract text available
    Text: < High-power GaAs FET small signal gain stage > MGF0916A L & S BAND / 0.2W SMD non - matched DESCRIPTION The MGF0916A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=23dBm(TYP.) @f=1.9GHz,Pin=5dBm


    Original     		PDF MGF0916A MGF0916A 23dBm 100mA 50pcs)

    MMBD2104

    Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
    Text: The Surface Mount Device Code Book R P Blackwell G4PMK A marsport publication! Introduction SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a


    Original     		PDF BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 LL914 LL4150, MMBD2104 Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932

    sot1227

    Abstract: 082279 SOT1227A Model 284J 226J
    Text: CLF1G0060-10; CLF1G0060S-10 Broadband RF power GaN HEMT Rev. 1 — 8 October 2012 Objective data sheet 1. Product profile 1.1 General description The CLF1G0060-10 and CLF1G0060S-10 are 10 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Table 1.


    Original     		PDF CLF1G0060-10; CLF1G0060S-10 CLF1G0060-10 CLF1G0060S-10 1G0060S-10 sot1227 082279 SOT1227A Model 284J 226J

    Untitled

    Abstract: No abstract text available
    Text: CLF1G0060-10; CLF1G0060S-10 Broadband RF power GaN HEMT Rev. 3 — 30 May 2013 Objective data sheet 1. Product profile 1.1 General description The CLF1G0060-10 and CLF1G0060S-10 are 10 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Table 1.


    Original     		PDF CLF1G0060-10; CLF1G0060S-10 CLF1G0060-10 CLF1G0060S-10 1G0060S-10

    12W SMD

    Abstract: MGF0913A smd GP 928
    Text: < High-power GaAs FET small signal gain stage > MGF0913A L & S BAND / 1.2W SMD non - matched DESCRIPTION The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=31dBm(TYP.) @f=1.9GHz,Pin=18dBm


    Original     		PDF MGF0913A MGF0913A 31dBm 18dBm 200mA 50pcs) -65ctric 12W SMD smd GP 928

    Untitled

    Abstract: No abstract text available
    Text: < High-power GaAs FET small signal gain stage > MGF0913A L & S BAND / 1.2W SMD non - matched DESCRIPTION The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=31dBm(TYP.) @f=1.9GHz,Pin=18dBm


    Original     		PDF MGF0913A MGF0913A 31dBm 18dBm 200mA 50pcs)

    MMBD2103

    Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N
    Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.


    Original     		PDF BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 MMBD2103 ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N

    SMD Codes

    Abstract: TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101
    Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.


    Original     		PDF BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 SMD Codes TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101

    FET K 1358

    Abstract: 9452 smd MGF0916A fet smd 2657 FET
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0916A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0916A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=23dBm TYP. @f=1.9GHz,Pin=5dBm


    Original     		PDF MGF0916A MGF0916A 23dBm 100mA 50pcs) June/2004 FET K 1358 9452 smd fet smd 2657 FET

    MGF0913A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0913A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=31dBm TYP. @f=1.9GHz,Pin=18dBm


    Original     		PDF MGF0913A MGF0913A 31dBm 18dBm 200mA 50pcs) June/2004

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0921A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=33dBm TYP. @f=1.9GHz,Pin=17dBm


    Original     		PDF MGF0921A MGF0921A 33dBm 17dBm 500mA 50pcs) June/2004

    VD F1 SMD

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0921A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=33dBm TYP. @f=1.9GHz,Pin=17dBm


    Original     		PDF MGF0921A MGF0921A 33dBm 17dBm 500mA 50pcs) VD F1 SMD

    MGF0913A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0913A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=31dBm TYP. @f=1.9GHz,Pin=18dBm


    Original     		PDF MGF0913A MGF0913A 31dBm 18dBm 200mA 50pcs)

    LF33 regulator

    Abstract: con20a FB j33 do214 smd dimensions profibus rs485 9 pin j11 power supply schematic diagram rs232 schematic diagram 47NF 500V 2u71 smd code p61
    Text: UM0193 User manual Getting Started with the ARMIC30 Evaluation Board ARM Core-based Industrial Controller using STR730 MCU Introduction This user manual describes the implementation of the ARMIC30 Evaluation Board. The ARMIC30 can be used to evaluate a variety of devices, especially microcontrollers, with the


    Original     		PDF UM0193 ARMIC30 STR730 32-bit STR730F RS-232, RS-485, LF33 regulator con20a FB j33 do214 smd dimensions profibus rs485 9 pin j11 power supply schematic diagram rs232 schematic diagram 47NF 500V 2u71 smd code p61

    SMD GP 113

    Abstract: MGF0921A
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0921A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=33dBm TYP. @f=1.9GHz,Pin=17dBm


    Original     		PDF MGF0921A MGF0921A 33dBm 17dBm 500mA 50pcs) SMD GP 113

    gm 4511

    Abstract: GP 841 Diode MGF0917A scl 1444
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0917A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0917A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=24dBm TYP. @f=1.9GHz,Pin=4dBm


    Original     		PDF MGF0917A MGF0917A 24dBm gm 4511 GP 841 Diode scl 1444

    4977 gm

    Abstract: MGF0919A
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0919A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=30dBm TYP. @f=1.9GHz,Pin=12dBm


    Original     		PDF MGF0919A MGF0919A 30dBm 12dBm 300mA 4977 gm

    GP 841 Diode

    Abstract: 4511 gm GG SMD MGF0917A K 3561 fet 2255
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0917A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0917A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=24dBm TYP. @f=1.9GHz,Pin=4dBm


    Original     		PDF MGF0917A MGF0917A 24dBm GP 841 Diode 4511 gm GG SMD K 3561 fet 2255

    4977 gm

    Abstract: Diode GP 514 MGF0919A
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0919A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=30dBm TYP. @f=1.9GHz,Pin=12dBm


    Original     		PDF MGF0919A MGF0919A 30dBm 12dBm 300mA gat87 4977 gm Diode GP 514

    MGF0916A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0916A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0916A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=23dBm TYP. @f=1.9GHz,Pin=5dBm


    Original     		PDF MGF0916A MGF0916A 23dBm 100mA

    BLM31A02PT

    Abstract: DB15 MALE TO DB9 FEMALE connector pinout DB15 MALE TO DB9 male connector pinout smd transistor ga8 SMD transistor A29 smd transistor ga3 relay lad1 SMD A18 Transistor SMD TRANSISTOR PD4 lad1 relay
    Text: 420521696-006 SuperI/OΤΜ PC87366 Evaluation Board Reference Manual ΤΜ SuperI/O PC87366 Evaluation Board Reference Manual Part Number: 420521696-006 September 1999 REVISION RECORD REVISION RELEASE DATE SUMMARY OF CHANGES 1.0 February 1999 First release.


    Original     		PDF PC87366 PC87366EB) PC87366. BLM31A02PT DB15 MALE TO DB9 FEMALE connector pinout DB15 MALE TO DB9 male connector pinout smd transistor ga8 SMD transistor A29 smd transistor ga3 relay lad1 SMD A18 Transistor SMD TRANSISTOR PD4 lad1 relay

    diode a29 smd

    Abstract: DB15 MALE TO DB9 male connector pinout B32 diode smd SMD diode b24 smd DIODE B28 DB15 MALE TO DB9 FEMALE connector pinout transistor A25 SMD TRANSISTOR c104 b31 smd diode IDC26
    Text: 420521696-005 SuperI/OΤΜ PC87365 Evaluation Board Reference Manual ΤΜ SuperI/O PC87365 Evaluation Board Reference Manual Part Number: 420521696-005 February 1999 REVISION RECORD REVISION RELEASE DATE SUMMARY OF CHANGES 1.0 February 1999 First release.


    Original     		PDF PC87365 PC87365EB) PC87365. diode a29 smd DB15 MALE TO DB9 male connector pinout B32 diode smd SMD diode b24 smd DIODE B28 DB15 MALE TO DB9 FEMALE connector pinout transistor A25 SMD TRANSISTOR c104 b31 smd diode IDC26