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    SMD PK TRANSISTOR Search Results

    SMD PK TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SMD PK TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4560 SMD IC

    Abstract: 4560 d 4560D DIL 6 M mic-03 32 pin plcc socket to dil 4560 SMD 8 PIN DIL SMD 22 04 14 pin ic dil datasheet DIL 28
    Text: 2.54 A High-precision sockets for DIL-IC, open frame D B B A 7,4 3 PK 1 3,9 C Ø 0,5 art. no. DIL DIL DIL DIL DIL DIL DIL DIL 6 M . 8 M . 10 M . 14 M . 16 M . 18 M . 20 M . 22 M . no. of contacts 6 8 10 14 16 18 20 22 A 7.62 7.62 7.62 7.62


    Original     		PDF 10x10 11x11 4560 SMD IC 4560 d 4560D DIL 6 M mic-03 32 pin plcc socket to dil 4560 SMD 8 PIN DIL SMD 22 04 14 pin ic dil datasheet DIL 28

    smd transistor S5

    Abstract: smd transistor s3 smd 4A data smd TRANSISTOR 257 smd transistor 2a j TO-5 amps pnp transistor smd TRANSISTOR 3 f smd5 smd pk transistor S3 SMD
    Text: SFT6036 series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com 4 AMP PNP Darlington Power Transistor DESIGNER’S DATA SHEET Part Number / Ordering Information1/


    Original     		PDF SFT6036 SFT6036 O-254 O-257 200oC SFT6039 O-254, O-257, smd transistor S5 smd transistor s3 smd 4A data smd TRANSISTOR 257 smd transistor 2a j TO-5 amps pnp transistor smd TRANSISTOR 3 f smd5 smd pk transistor S3 SMD

    smd 4A data

    Abstract: No abstract text available
    Text: SFT6039 series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com 4 AMP NPN Darlington Power Transistor DESIGNER’S DATA SHEET Part Number / Ordering Information 1/


    Original     		PDF SFT6039 SFT6039 O-254 O-257 200oC SFT6036 O-254, O-257, smd 4A data

    smd transistor S5

    Abstract: smd transistor s3 npn smd 2a NPN 200 VOLTS 1 amp smd TRANSISTOR smd TRANSISTOR 257 S3 SMD smd transistor 2a j smd npn darlington pk transistor npn smd transistor 257
    Text: SFT6039 series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com 4 AMP NPN Darlington Power Transistor DESIGNER’S DATA SHEET Part Number / Ordering Information 1/


    Original     		PDF SFT6039 SFT6039 O-254 O-257 200oC SFT6036 O-254, O-257, smd transistor S5 smd transistor s3 npn smd 2a NPN 200 VOLTS 1 amp smd TRANSISTOR smd TRANSISTOR 257 S3 SMD smd transistor 2a j smd npn darlington pk transistor npn smd transistor 257

    1455

    Abstract: BCU83
    Text: BCU83–SMD MECHANICAL DATA Dimensions in mm NPN EPITAXIAL PLANAR SILICON TRANSISTOR 4 .5 1 .0 2 .5 1 .5 4 .2 5 m a x . 1 .6 0 .4 0 0 .4 0 Ideal for high current driver applications requiring low loss devices FEATURES • LOW VCE SAT • HIGH CURRENT 0 .5 0


    Original     		PDF BCU83 300ms 1455

    electrolytic capacitor filter

    Abstract: ADP1621 GRM31CR60J476M IRF7470 M400 RB10 SSA33L equivalent smd mosfet CRCW0603150 IRF7470 equivalent
    Text: Evaluation Board for Constant-Frequency, Current-Mode, Step-Up, DC/DC Controller EVAL-ADP1621 EVALUATION BOARD DESCRIPTION ADP1621 DEVICE DESCRIPTION This data sheet describes the design, operation and test results of the ADP1621 Evaluation Board. The input range for the


    Original     		PDF EVAL-ADP1621 ADP1621 SSA33L CDRH104R-2R5NC MSS1038-252NL GRM31CR60J476M GRM32DR71C106KA01 VJ0603Y104MXQ GRM188R61A105K electrolytic capacitor filter GRM31CR60J476M IRF7470 M400 RB10 SSA33L equivalent smd mosfet CRCW0603150 IRF7470 equivalent

    A08K

    Abstract: a08k transistor SMD TRANSISTOR mosfet marking pd
    Text: MOSFET IC SMD Type N-Channel Enhancement Mode Field Effect Transistor KO3416 SOT-23-3 Unit: mm +0.2 2.9-0.2 +0.1 0.4-0.05 • Features 1 ● RDS ON ＜ 26mΩ (VGS = 2.5V) 0.55 ● RDS(ON) ＜ 22mΩ (VGS = 4.5V) +0.2 1.6 -0.1 +0.2 2.8-0.2 ● ID = 6.5 A 0.4


    Original     		PDF KO3416 OT-23-3 A08K a08k transistor SMD TRANSISTOR mosfet marking pd

    Untitled

    Abstract: No abstract text available
    Text: MOSFET IC SMD Type P-Channel Enhancement Mode Field Effect Transistor @O3423 A SOT-23 Unit: mm +0.2 2.9-0.2 +0.1 0.4-0.05 • Features 1 ● RDS ON < 118m Ω (V GS = -4.5V) +0.05 0.1-0.01 +0.2 1.1 -0.1 ● ESD Rating: 2000V HBM 2 +0.1 0.95-0.1 +0.2 1.9-0.2


    Original     		PDF OT-23

    PCF 7953

    Abstract: J-Link-ARM-KS viper12a application note viper12 design AN3165 smd code capacitor color lcd inverter board schematic tyco igbt sine wave inverter schematic and firmware SMD CAPACITORS color code
    Text: UM0877 User manual 1.4 kW digital power factor corrector based on the STM32F103ZE Introduction This system has been designed to evaluate the capabilities of the high-density STM32F103ZE microcontroller to perform a digital power factor corrector. An application


    Original     		PDF UM0877 STM32F103ZE STM32F103ZE STM32 PCF 7953 J-Link-ARM-KS viper12a application note viper12 design AN3165 smd code capacitor color lcd inverter board schematic tyco igbt sine wave inverter schematic and firmware SMD CAPACITORS color code

    WMV smd transistor

    Abstract: smd mk
    Text: f.con ISO 14001 Alphanumerical product list art. no. page art. no. page art. no. page art. no. page 1706 . G 1831 . ASL . SMD . ASL . SMD . B SM ASLA . ASLG . BADM . BADP . BK 01 32 BL 1 . BL 10 . BL 11 . BL 12 . BL 13 . BL 14 .


    Original     		PDF

    ANP015

    Abstract: AF4435 SMD Capacitor symbols SOP-14L Capacitor smd 680uf 16v AP2011 SB340 8870796 capacitor huang 470UF 35V SMD 6 PIN IC FOR PWM
    Text: ANP015 Application Note AP2011 High Efficiency Synchronous PWM Controller Preliminary Contents 1. AP2011 Specification 1.1 1.2 1.3 1.4 Features General Description Pin Assignments Pin Descriptions 1.5 Block Diagram 1.6 Absolute Maximum Ratings 2. Hardware


    Original     		PDF ANP015 AP2011 ANP015 AF4435 SMD Capacitor symbols SOP-14L Capacitor smd 680uf 16v SB340 8870796 capacitor huang 470UF 35V SMD 6 PIN IC FOR PWM

    TRANSISTOR SMD MARKING CODE 1 KW

    Abstract: smd marking code j6 2000 W BTL POWER AMPLIFIER TRANSISTOR J9100 TRANSISTOR SMD MARKING CODE SE IEM101-3
    Text: NCP4896 1.0 Watt Audio Power Amplifier with Earpiece Driving Capability The NCP4896 is an audio power amplifier designed for portable communication device applications such as mobile phones. This part is capable of delivering 1.0 W of continuous average power to an


    Original     		PDF NCP4896 NCP4896/D TRANSISTOR SMD MARKING CODE 1 KW smd marking code j6 2000 W BTL POWER AMPLIFIER TRANSISTOR J9100 TRANSISTOR SMD MARKING CODE SE IEM101-3

    SMD MARKING A69 transistor

    Abstract: SMD MARKING A69 A70 SMD
    Text: NCP4896 1.0 Watt Audio Power Amplifier with Earpiece Driving Capability The NCP4896 is an audio power amplifier designed for portable communication device applications such as mobile phones. This part is capable of delivering 1.0 W of continuous average power to an


    Original     		PDF NCP4896 NCP4896 NCP4896/D SMD MARKING A69 transistor SMD MARKING A69 A70 SMD

    3000 Watt BTL Audio Amplifier

    Abstract: smd TRANSISTOR code marking KW 2000 W BTL POWER AMPLIFIER TRANSISTOR smd transistor marking j6 TRANSISTOR SMD MARKING CODE mf smd transistor marking j9 transistor smd code marking nc
    Text: NCP4896 1.0 Watt Audio Power Amplifier with Earpiece Driving Capability The NCP4896 is an audio power amplifier designed for portable communication device applications such as mobile phones. This part is capable of delivering 1.0 W of continuous average power to an


    Original     		PDF NCP4896 NCP4896/D 3000 Watt BTL Audio Amplifier smd TRANSISTOR code marking KW 2000 W BTL POWER AMPLIFIER TRANSISTOR smd transistor marking j6 TRANSISTOR SMD MARKING CODE mf smd transistor marking j9 transistor smd code marking nc

    499E

    Abstract: 3000 Watt BTL Audio Amplifier
    Text: NCP4896 1.0 Watt Audio Power Amplifier with Earpiece Driving Capability The NCP4896 is an audio power amplifier designed for portable communication device applications such as mobile phones. This part is capable of delivering 1.0 W of continuous average power to an


    Original     		PDF NCP4896 NCP4896/D 499E 3000 Watt BTL Audio Amplifier

    Untitled

    Abstract: No abstract text available
    Text: 2N5154XSMD MECHANICAL DATA Dimensions in mm inches 3 2 9 .6 9 .3 1 1 .5 1 1 .2 7 (0 8 (0 8 (0 8 (0 .3 8 .3 6 .4 5 .4 4 DESCRIPTION 1 ) 9 ) 6 ) 4 ) 0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 ) SMD (TO-276AB) The 2N5154XSMD is a silicon expitaxial planar NPN transistors in a Ceramic Surface


    Original     		PDF 2N5154XSMD O-276AB) 2N5154XSMD

    Untitled

    Abstract: No abstract text available
    Text: 2N5154XSMD MECHANICAL DATA Dimensions in mm inches 3 2 9 .6 9 .3 1 1 .5 1 1 .2 7 (0 8 (0 8 (0 8 (0 .3 8 .3 6 .4 5 .4 4 DESCRIPTION 1 ) 9 ) 6 ) 4 ) 0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 ) SMD (TO-276AB) The 2N5154XSMD is a silicon expitaxial planar NPN transistors in a Ceramic Surface


    Original     		PDF 2N5154XSMD O-276AB) 2N5154XSMD

    2N3741

    Abstract: 2N3741SMD 2N3766SMD
    Text: SEME 2N3741 SMD LAB MECHANICAL DATA Dimensions in mm MEDIUM POWER PNP SILICON POWER TRANSISTOR 3 .6 0 0 .1 4 2 M a x . • LOW SATURATION VOLTAGE • HIGH GAIN 3 FEATURES 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1


    Original     		PDF 2N3741 100KHz 2N3741SMD 2N3766SMD

    Untitled

    Abstract: No abstract text available
    Text: SEME 2N3741 SMD LAB MECHANICAL DATA Dimensions in mm MEDIUM POWER PNP SILICON POWER TRANSISTOR 3 .6 0 0 .1 4 2 M a x . • LOW SATURATION VOLTAGE • HIGH GAIN 3 FEATURES 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1


    Original     		PDF 2N3741 100KHz

    smd Schottky diode sod-123 marking code 220

    Abstract: transistor BC557 base collector emitter SOD-123H JC0-024 BC856 BC857 3E DIODE bc556 SMD TRANSISTOR SMD MARKING CODE 3G TRANSISTOR SMD MARKING CODE PK 14
    Text: WILLAS Low VF Chip Schottky Barrier Diodes BC856A/BWT1 BC857A/B/CWT1 1.0A Surface Mount Schottky Barrier Rectifiers - 20V-40V General Purpose TransistorsPackage outline BC858A/B/CWT1 SL12-N THRU SL14-N Features • Batch process design, excellent power dissipation offers


    Original     		PDF SL12-N SL14-N BC856A/BWT1 BC857A/B/CWT1 0V-40V BC858A/B/CWT1 OD-323-L FM120-MH FM130-MH FM140-MH smd Schottky diode sod-123 marking code 220 transistor BC557 base collector emitter SOD-123H JC0-024 BC856 BC857 3E DIODE bc556 SMD TRANSISTOR SMD MARKING CODE 3G TRANSISTOR SMD MARKING CODE PK 14

    2A 80v complementary transistor

    Abstract: No abstract text available
    Text: SEME 2N3741 SMD LAB MECHANICAL DATA Dimensions in mm MEDIUM POWER PNP SILICON POWER TRANSISTOR 3 .6 0 0 .1 4 2 M a x . • LOW SATURATION VOLTAGE • HIGH GAIN 3 FEATURES 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1


    Original     		PDF 2N3741 2N3741SMD" 2N3741SMD O276AB) 2A 80v complementary transistor

    SMD DIODE A6 t

    Abstract: smd diode a6
    Text: NCP1631PFCGEVB Interleaved PFC Stage Driven by the NCP1631 Evaluation Board User's Manual http://onsemi.com Interleaved PFC is an emerging solution that becomes particularly popular in applications where a strict form factor has to be met like for instance, in slim notebook


    Original     		PDF NCP1631PFCGEVB NCP1631 EVBUM2163/D SMD DIODE A6 t smd diode a6

    2sj177

    Abstract: 2SJ299 PF0040 2SJ292 2SJ295 Hitachi PF0030 TO220FM 2SJ278 2SJ279 2SJ290
    Text: HITACHI 1.5.4 13 New DIV-L Series • • 2.5V and 4V gate drive device High speed switching 30% reduction in fall time, tf • Strong resistance to inductive load over voltage avalanche breakdown. • Stronger built-in diode breakdown capability • Wide range of P-channel devices


    OCR Scan     		PDF 2SJ2-46 2SJ223 2SJ182 2SJ245 2SJ214 2SJ219 2SJ220 2SJ242 2SJ175 2SJ176 2sj177 2SJ299 PF0040 2SJ292 2SJ295 Hitachi PF0030 TO220FM 2SJ278 2SJ279 2SJ290

    kvp smd

    Abstract: kvp 42 DIODE kvp 26A M kvp diode 2005C 1.5 khp SMD kvp XMR5 0709a PKF SMD
    Text: AXIAL LEAD DIODES CURRENT P R V VO LTS R E C O V E R Y (nS) SU R G E (A) S E R IE S PAGE 50-1000 50-1000 50-1000 50-1000 2000 to 3000 1000 to 4000 9000 4500 to 6000 7000 to 8000 9000 to 10000 11000 to 12000 1000 to 5000 10000 to 15000 STANDARD STANDARD STANDARD


    OCR Scan     		PDF 600mA 220mA 200mA 175mA 150mA 100mA 500mA kvp smd kvp 42 DIODE kvp 26A M kvp diode 2005C 1.5 khp SMD kvp XMR5 0709a PKF SMD