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    SMD REC MARKING Search Results

    SMD REC MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLM15PX121BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 120ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX181SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 180ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM21HE802SN1L Murata Manufacturing Co Ltd FB SMD 0805inch 8000ohm NONAUTO Visit Murata Manufacturing Co Ltd
    BLM15PX330BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 33ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX600SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 60ohm POWRTRN Visit Murata Manufacturing Co Ltd

    SMD REC MARKING Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    057N06N

    Abstract: 054N06N IEC61249-2-21 JESD22 PG-TO220-3 ua358
    Text: Type IPB054N06N3 G IPP057N06N3 G OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS on ,max (SMD) 5.4 mΩ ID 80 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPB054N06N3 IPP057N06N3 IEC61249-2-21 PG-TO263-3 PG-TO220-3 054N06N 057N06N 057N06N 054N06N IEC61249-2-21 JESD22 PG-TO220-3 ua358 PDF

    052N06L

    Abstract: IEC61249-2-21 IPP052N06L3 JESD22 PG-TO220-3 gs 05 24 gd 2
    Text: Type IPB049N06L3 G IPP052N06L3 G OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS on ,max (SMD) 4.7 mΩ ID 80 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPB049N06L3 IPP052N06L3 IEC61249-2-21 PG-TO263-3 PG-TO220-3 049N06L 052N06L 052N06L IEC61249-2-21 JESD22 PG-TO220-3 gs 05 24 gd 2 PDF

    084N06L

    Abstract: IPP084N06L3G IEC61249-2-21 JESD22 PG-TO220-3 081N06L
    Text: Type IPB081N06L3 G IPP084N06L3 G OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS on ,max (SMD) 8.1 mΩ ID 50 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPB081N06L3 IPP084N06L3 IEC61249-2-21 PG-TO263-3 PG-TO220-3 081N06L 084N06L 084N06L IPP084N06L3G IEC61249-2-21 JESD22 PG-TO220-3 081N06L PDF

    084N06L

    Abstract: 081N06L
    Text: Type IPB081N06L3 G IPP084N06L3 G IPI084N06L3 G OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters VDS 60 V RDS on ,max (SMD) 8.1 mΩ ID 50 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPB081N06L3 IPP084N06L3 IPI084N06L3 IEC61249-2-21 PG-TO263-3 PG-TO220-3 PG-TO262-3 084N06L 081N06L PDF

    084N06L

    Abstract: smd marking D50 081N06L JESD22 PG-TO220-3 ipp084n06 marking D50 IPB081N06L3 IPP084 D50A5
    Text: IPB081N06L3 G IPP084N06L3 G Type OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max (SMD) 8.1 mΩ ID 50 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPB081N06L3 IPP084N06L3 PG-TO263-3 PG-TO220-3 081N06L 084N06L 084N06L smd marking D50 081N06L JESD22 PG-TO220-3 ipp084n06 marking D50 IPP084 D50A5 PDF

    067N08N

    Abstract: 070N08N SMD MARKING d36 JESD22 PG-TO220-3 DD40
    Text: IPP070N08N3 G IPI070N08N3 G IPB067N08N3 G OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 80 V R DS(on),max (SMD) 6.7 mΩ ID 80 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPP070N08N3 IPI070N08N3 IPB067N08N3 PG-TO220-3 PG-TO262-3 PG-TO263-3 070N08N 067N08N 070N08N SMD MARKING d36 JESD22 PG-TO220-3 DD40 PDF

    057N06N

    Abstract: 054N06N JESD22 PG-TO220-3
    Text: IPB054N06N3 G IPP057N06N3 G Type OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max (SMD) 5.4 mΩ ID 80 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPB054N06N3 IPP057N06N3 PG-TO263-3 PG-TO220-3 054N06N 057N06N 057N06N 054N06N JESD22 PG-TO220-3 PDF

    084N06L

    Abstract: 081N06L
    Text: IPB081N06L3 G IPP084N06L3 G Type OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max (SMD) 8.1 mΩ ID 50 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPB081N06L3 IPP084N06L3 PG-TO263-3 081N06L PG-TO220-3 084N06L 084N06L 081N06L PDF

    Untitled

    Abstract: No abstract text available
    Text: IPB049N06L3 G IPP052N06L3 G Type OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max (SMD) 4.9 mΩ ID 80 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPB049N06L3 IPP052N06L3 PG-TO263-3 PG-TO220-3 049N06L 052N06L PDF

    024N06N

    Abstract: 021N06N PG-TO220-3 IEC61249-2-21 IPI024N06N3 G
    Text: Type IPB021N06N3 G IPI024N06N3 G IPP024N06N3 G OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS on ,max (SMD) 2.1 mΩ ID 120 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPB021N06N3 IPI024N06N3 IPP024N06N3 IEC61249-2-21 PG-TO263-3 PG-TO262-3 PG-TO220-3 024N06N 021N06N PG-TO220-3 IEC61249-2-21 IPI024N06N3 G PDF

    052N06L

    Abstract: IPP052N06L3 JESD22 PG-TO220-3 58ua
    Text: IPB049N06L3 G IPP052N06L3 G Type OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max (SMD) 4.7 mΩ ID 80 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPB049N06L3 IPP052N06L3 PG-TO263-3 PG-TO220-3 049N06L 052N06L 052N06L JESD22 PG-TO220-3 58ua PDF

    100n08n

    Abstract: IPB097N08N3 IEC61249-2-21 PG-TO220-3
    Text: IPP100N08N3 G IPI100N08N3 G IPB097N08N3 G OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 80 V R DS on ,max (SMD) 9.7 mΩ ID 70 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPP100N08N3 IPI100N08N3 IPB097N08N3 IEC61249-2-21 PG-TO220-3 PG-TO262-3 PG-TO263-3 100n08n IEC61249-2-21 PG-TO220-3 PDF

    067N08N

    Abstract: 070N08N smd marking D36 PG-TO220-3 IEC61249-2-21
    Text: IPP070N08N3 G IPI070N08N3 G IPB067N08N3 G OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 80 V R DS on ,max (SMD) 6.7 mΩ ID 80 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPP070N08N3 IPI070N08N3 IPB067N08N3 IEC61249-2-21 PG-TO220-3 PG-TO262-3 PG-TO263-3 067N08N 070N08N smd marking D36 PG-TO220-3 IEC61249-2-21 PDF

    032N06n

    Abstract: 029N06N IPI032N06N3 G IEC61249-2-21 IPP032N06N3 PG-TO220-3 IPB029N06N3 G IPP032N06N3G 032N06
    Text: Type IPB029N06N3 G IPI032N06N3 G IPP032N06N3 G OptiMOS 3 Power-Transistor Product Summary Features V DS 60 V • Ideal for high frequency switching and sync. rec. R DS on ,max (SMD) 2.9 mΩ • Optimized technology for DC/DC converters ID 120 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPB029N06N3 IPI032N06N3 IPP032N06N3 IEC61249-2-21 PG-TO263-3 PG-TO262-3 PG-TO220-3 032N06n 029N06N IPI032N06N3 G IEC61249-2-21 PG-TO220-3 IPB029N06N3 G IPP032N06N3G 032N06 PDF

    037N06L

    Abstract: 034N06L IPI037N06L3 IEC61249-2-21 PG-TO-220-3 IPP037N06L3 G
    Text: Type IPB034N06L3 G IPI037N06L3 G IPP037N06L3 G OptiMOS 3 Power-Transistor Product Summary Features V DS 60 V • Ideal for high frequency switching and sync. rec. R DS on ,max (SMD) 3.4 mΩ • Optimized technology for DC/DC converters ID 90 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPB034N06L3 IPI037N06L3 IPP037N06L3 IPP04xN06L IPI04xN06L IPB04xN06L IEC61249-2-21 037N06L 034N06L IEC61249-2-21 PG-TO-220-3 IPP037N06L3 G PDF

    024N06N

    Abstract: 021N06N JESD22 PG-TO220-3 IPP024N06N3 G 024N06 IPI024N06N3 G
    Text: IPB021N06N3 G Type IPI024N06N3 G IPP024N06N3 G OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max (SMD) 2.1 mΩ ID 120 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPB021N06N3 IPI024N06N3 IPP024N06N3 PG-TO263-3 PG-TO262-3 PG-TO220-3 021N06N 024N06N 021N06N JESD22 PG-TO220-3 IPP024N06N3 G 024N06 IPI024N06N3 G PDF

    037N06L

    Abstract: 034N06L IPI037N06L3 034N06 13000 transistor TO-220 me 13000 transistor TO-220 JESD22 PG-TO-220-3
    Text: IPB034N06L3 G Type IPI037N06L3 G IPP037N06L3 G OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max (SMD) 3.4 mΩ ID 90 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPB034N06L3 IPI037N06L3 IPP037N06L3 IPP04xN06L IPI04xN06L IPB04xN06L PG-TO-263-3 037N06L 034N06L 034N06 13000 transistor TO-220 me 13000 transistor TO-220 JESD22 PG-TO-220-3 PDF

    032N06n

    Abstract: 029N06N 032N06 032N0 IPP032N06N3 IPI032N06N3 G JESD22 PG-TO220-3
    Text: IPB029N06N3 G Type IPI032N06N3 G IPP032N06N3 G OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max (SMD) 2.9 mΩ ID 120 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPB029N06N3 IPI032N06N3 IPP032N06N3 PG-TO263-3 PG-TO262-3 PG-TO220-3 029N06N 032N06n 029N06N 032N06 032N0 IPI032N06N3 G JESD22 PG-TO220-3 PDF

    SMD marking CHK

    Abstract: No abstract text available
    Text: 7 8 THIS DRAWING IS UNPUBLISHED. VERTRAULICHE UNVEROEFFENTLICHTE ZEICHNUNG C COPYRIGHT 2004 RELEASED FOR PUBLICATION FREI FUER VEROEFFENTLICHUNG ALL RIGHTS RESERVED. ALLE RECHTE VORBEHALTEN. - DEC 6 2004- 5 4 3 2 LOC MATED WITH: PASSEND ZU: REVISIONS DIST


    Original     		ECO-13-012712 EGGMN03028 10SEP2013 30NOV2004 01DEC2004 HDP20 SMD marking CHK PDF

    SMD REC MARKING

    Abstract: smd marking GI 20
    Text: R E L E A S E D F OR P U B L I C A T I O N FREI FUER VERÖFFENTL IC HUNG RESERVED. T Y C O E L E C T R O N I C S C O R P O R A T I O N . AIA LI LF RRFTI GHHTFT SVTIRRFHAI TFN. 2004 DEL ^ATED W I T H : FASSEND ZU: LOC REV I S I O N S D I ST A P PROJEKT NR.:


    OCR Scan     		EGGMN03028 30N0V2004 10N0V2005 N0V2004 SMD REC MARKING smd marking GI 20 PDF

    amp TYCO sub-d

    Abstract: SUB-D 9 pol sub-d Buchsenstecker subd
    Text: R E L E A S E D F OR P U B L I C A T I O N FREI FUER VERÖFFENTL IC HUNG RESERVED. T Y C O E L E C T R O N I C S C O R P O R A T I O N . AIA LI LF RRFTI GHHTFT SVTIRRFHAI TFN. DEL 2004 ^ATED W I T H : FASSEND ZU: LOC REV IS I O N S D I ST A P PROJEKT NR.:


    OCR Scan     		EGGMN03028 30N0V2004 10N0V2005 amp TYCO sub-d SUB-D 9 pol sub-d Buchsenstecker subd PDF

    smd diode marking a6

    Abstract: SMD DIODE DEVICE marking R LBAS16HT1G SMD y14 LBAS16HT1 SMD DIODE A6 t DIODE smd marking uh
    Text: LESHAN RADIO COMPANY, LTD. Switching Diode LBAS16HT1 FEATURE ƽSmall plastic SMD package. ƽContinuous reverse voltage: max. 75 V. ƽHigh-speed switching in hybrid thick and thin-film circuits. 1 ƽPb-Free Package is available. DEVICE MARKING AND ORDERING INFORMATION


    Original     		LBAS16HT1 3000/Tape LBAS16HT1G LBAS16HT1 OD-323 LBAS16HT1-3/3 smd diode marking a6 SMD DIODE DEVICE marking R LBAS16HT1G SMD y14 SMD DIODE A6 t DIODE smd marking uh PDF

    st smt ic marking code

    Abstract: 1740194-2
    Text: RELEASED FOR PUBLICATION 2004 DEL FREI TYCO ELECTRONICS FUER V E R Ö F F E N T L I C H U N G AL L RIGHTS RESERVED. CORPORATION. AI I F RFTHTF ^ATED WI TH: F A S S E N D ZU: LOC RE V I S I O N S D I ST AENDERUNGEN A VTIRRFHAI T F N . P EGGMN03028 A N S IC H T ZE IG T 15 POL. STECKER


    OCR Scan     		EGGMN03028 30N0V2004 10N0V2005 N0V2004 01DEC2004 MAR200Ü st smt ic marking code 1740194-2 PDF

    smd sot23 marking A3

    Abstract: smd diode marking A3 sot23 DIODE smd marking A3 smd transistor marking A3 sot-23 packing a3 CMBD2835 CMBD2836
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR DUAL SWITCHING DIODES CMBD2835 CMBD2836 3 SOT-23 Formed SMD Package Pin Configuration 1 = CATHODE 2 = CATHODE 3 = ANODE 2 1 Marking CMBD2835 - A3 CMBD2836 - A2


    Original     		CMBD2835 CMBD2836 OT-23 CMBD2835 CMBD2836 C-120 2836Rev050302 smd sot23 marking A3 smd diode marking A3 sot23 DIODE smd marking A3 smd transistor marking A3 sot-23 packing a3 PDF