TRANSISTOR BC 448 smd
Abstract: JA101P smd transistor npn 491 transistor TO-92 bc108 transistor pn2222 BC853B transistor MPSA77 jc5010 215 BC307 smd 2PB601A
Text: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page 38 41 44 44 45 46 47 48 48 48 General purpose amplification and switching transistors Low-power transistors 17 Transistor arrays 22 Medium-power transistors 23 24 Power transistors
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BRY61
BRY62
OT143B
TRANSISTOR BC 448 smd
JA101P
smd transistor npn 491
transistor TO-92 bc108
transistor pn2222
BC853B
transistor MPSA77
jc5010 215
BC307 smd
2PB601A
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PBLS4003D
Abstract: tsop6 marking 312
Text: PBLS4003D 40 V PNP BISS loadswitch Rev. 03 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)
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PBLS4003D
OT457
SC-74)
PBLS4003D
tsop6 marking 312
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PBLS4005D
Abstract: No abstract text available
Text: PBLS4005D 40 V PNP BISS loadswitch Rev. 02 — 19 July 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD)
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PBLS4005D
OT457
SC-74)
PBLS4005D
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PBLS4004D
Abstract: tsop6 marking 312
Text: PBLS4004D 40 V PNP BISS loadswitch Rev. 03 — 6 January 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)
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PBLS4004D
OT457
SC-74)
PBLS4004D
tsop6 marking 312
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PBLS4001D
Abstract: No abstract text available
Text: PBLS4001D 40 V PNP BISS loadswitch Rev. 02 — 5 July 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD)
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PBLS4001D
OT457
SC-74)
PBLS4001D
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PBLS4003D
Abstract: 15096
Text: PBLS4003D 40 V PNP BISS loadswitch Rev. 02 — 4 July 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD)
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PBLS4003D
OT457
SC-74)
PBLS4003D
15096
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PBLS4002D
Abstract: No abstract text available
Text: PBLS4002D 40 V PNP BISS loadswitch Rev. 02 — 4 July 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD)
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PBLS4002D
OT457
SC-74)
PBLS4002D
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006A
Abstract: PBLS4004D SC74 marking 345
Text: PBLS4004D 40 V PNP BISS loadswitch Rev. 02 — 19 July 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD)
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PBLS4004D
OT457
SC-74)
006A
PBLS4004D
SC74 marking 345
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PBLS4005D
Abstract: No abstract text available
Text: PBLS4005D 40 V PNP BISS loadswitch Rev. 03 — 6 January 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)
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PBLS4005D
OT457
SC-74)
PBLS4005D
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PBLS4002D
Abstract: No abstract text available
Text: PBLS4002D 40 V PNP BISS loadswitch Rev. 03 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)
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PBLS4002D
OT457
SC-74)
PBLS4002D
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PBLS4001D
Abstract: No abstract text available
Text: PBLS4001D 40 V PNP BISS loadswitch Rev. 03 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)
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PBLS4001D
OT457
SC-74)
PBLS4001D
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PBSS304ND
Abstract: PBSS304PD tsop6 marking 312 TRANSISTOR SMD MARKING CODE AJ
Text: PBSS304PD 80 V, 3 A PNP low VCEsat BISS transistor Rev. 02 — 24 March 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.
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PBSS304PD
OT457
SC-74)
PBSS304ND.
PBSS304PD
PBSS304ND
tsop6 marking 312
TRANSISTOR SMD MARKING CODE AJ
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Untitled
Abstract: No abstract text available
Text: PBSS5160T 60 V, 1 A PNP low VCEsat BISS transistor Rev. 04 — 15 January 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
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PBSS5160T
O-236AB)
PBSS4160T.
BCP52
BCX52
PBSS5160T
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SMD transistor MARKING CODE 312
Abstract: SOT23-4 MARKING U6 PBSS5160T BCP52 BCX52 PBSS4160T TRANSISTOR SMD MARKING CODE 04 MARKING CODE SMD IC NXP TRANSISTOR SMD MARKING CODE SOT23 pbss5160
Text: PBSS5160T 60 V, 1 A PNP low VCEsat BISS transistor Rev. 04 — 15 January 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
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PBSS5160T
O-236AB)
PBSS4160T.
BCP52
BCX52
PBSS5160T
SMD transistor MARKING CODE 312
SOT23-4 MARKING U6
BCX52
PBSS4160T
TRANSISTOR SMD MARKING CODE 04
MARKING CODE SMD IC
NXP TRANSISTOR SMD MARKING CODE SOT23
pbss5160
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Untitled
Abstract: No abstract text available
Text: SO T8 83 PMZ350UPE 20 V, P-channel Trench MOSFET 14 May 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench
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PMZ350UPE
DFN1006-3
OT883)
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Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PMXB65UPE 12 V, P-channel Trench MOSFET 18 February 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
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PMXB65UPE
DFN1010D-3
OT1215)
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Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PMXB56EN 30 V, N-channel Trench MOSFET 30 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
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PMXB56EN
DFN1010D-3
OT1215)
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Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PMXB65ENE 30 V, N-channel Trench MOSFET 13 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
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PMXB65ENE
DFN1010D-3
OT1215)
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Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PMXB120EPE 30 V, P-channel Trench MOSFET 24 September 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
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PMXB120EPE
DFN1010D-3
OT1215)
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Untitled
Abstract: No abstract text available
Text: PMZB350UPE 20 V, single P-channel Trench MOSFET 1 August 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
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PMZB350UPE
DFN1006B-3
OT883B)
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Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PMXB75UPE 20 V, P-channel Trench MOSFET 18 February 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
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PMXB75UPE
DFN1010D-3
OT1215)
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NXP date code marking
Abstract: a/NXP date code marking
Text: DF N1 01 0D -3 PMXB65UPE 12 V, P-channel Trench MOSFET 4 February 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
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PMXB65UPE
DFN1010D-3
OT1215)
NXP date code marking
a/NXP date code marking
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Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PMXB65UPE 12 V, P-channel Trench MOSFET 8 July 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
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PMXB65UPE
DFN1010D-3
OT1215)
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110N06L
Abstract: smd diode 78a smd diode marking 78A SMD diode D94 PG-TO220-3 PG-TO263 marking d78 IPP110N IPP110N06L diode smd 312
Text: IPB110N06L G OptiMOS Power-Transistor IPP110N06L G Product Summary Features V DS • For fast switching converters and sync. rectification R DS on ,max • N-channel enhancement - logic level SMD version ID 60 V 11 m: 78 A • 175 °C operating temperature
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IPB110N06L
IPP110N06L
PG-TO263-3
P-TO26
PG-TO220-3
110N06L
110N06L
smd diode 78a
smd diode marking 78A
SMD diode D94
PG-TO220-3
PG-TO263
marking d78
IPP110N
diode smd 312
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