Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SMD TRANSISTOR 6P Search Results

    SMD TRANSISTOR 6P Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SMD TRANSISTOR 6P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original
    PDF

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original
    PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    DRF1601

    Abstract: smd transistor js UHF POWER TRANSISTOR NPN medium power transistor in a smd FR4 epoxy dielectric constant 4.2 power transistor SMD TRANSISTOR smd transistor 026 PL SOT223 UHF POWER
    Text: UHF POWER TRANSISTOR DRF1601 NPN SiGe RF TRANSISTOR The DRF1601 is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-223 SMD package. The DRF1601 can be used as a driver device or an output device, depending on the specific application.


    Original
    PDF DRF1601 DRF1601 OT-223 900MHz 100nF 100pF smd transistor js UHF POWER TRANSISTOR NPN medium power transistor in a smd FR4 epoxy dielectric constant 4.2 power transistor SMD TRANSISTOR smd transistor 026 PL SOT223 UHF POWER

    smd transistor k 1540

    Abstract: 703 TRANSISTOR smd transistor 835 transister transister smd DRF1401 NPN medium power transistor in a smd SiGe POWER TRANSISTOR SMD transister smd transistor js
    Text: UHF POWER TRANSISTOR DRF1401 NPN SiGe RF TRANSISTOR The DRF1401 is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-223 SMD package. The DRF1401 can be used as a driver device or an output device, depending on the specific application.


    Original
    PDF DRF1401 DRF1401 OT-223 900MHz 100nF 100pF smd transistor k 1540 703 TRANSISTOR smd transistor 835 transister transister smd NPN medium power transistor in a smd SiGe POWER TRANSISTOR SMD transister smd transistor js

    Transistor B 1566

    Abstract: ic smd a 1712 smd transistor zl SMD l4 Transistor B 1566 Transistor SMD TRANSISTOR L6 smd transistor js RF transistor SOT-89 NPN medium power transistor in a smd transistor 1734
    Text: UHF POWER TRANSISTOR DRF1402F NPN SiGe RF TRANSISTOR SOT-89 The DRF1402F is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-89 SMD package. 4 The DRF1402F can be used as a driver device or an output device, depending on the specific application


    Original
    PDF DRF1402F OT-89 DRF1402F OT-89 465MHz 100nF Transistor B 1566 ic smd a 1712 smd transistor zl SMD l4 Transistor B 1566 Transistor SMD TRANSISTOR L6 smd transistor js RF transistor SOT-89 NPN medium power transistor in a smd transistor 1734

    transistor smd code marking 101

    Abstract: sc-101 TRANSISTOR SMD MARKING CODES PMBT3904M MARKING CODE SMD IC
    Text: PMBT3904M 40 V, 200 mA NPN switching transistor Rev. 01 — 21 July 2009 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description NPN single switching transistor in a SOT883 SC-101 leadless ultra small Surface-Mounted Device (SMD) plastic package.


    Original
    PDF PMBT3904M OT883 SC-101) PMBT3906M. PMBT3904M transistor smd code marking 101 sc-101 TRANSISTOR SMD MARKING CODES MARKING CODE SMD IC

    PMBT3904M,315

    Abstract: marking code 6p smd transistor 6p smd marking code 6p
    Text: PMBT3904M 40 V, 200 mA NPN switching transistor Rev. 01 — 21 July 2009 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description NPN single switching transistor in a SOT883 SC-101 leadless ultra small Surface-Mounted Device (SMD) plastic package.


    Original
    PDF PMBT3904M OT883 SC-101) PMBT3906M. PMBT3904M 771-PMBT3904M315 PMBT3904M,315 marking code 6p smd transistor 6p smd marking code 6p

    smd transistor zl

    Abstract: rf transistor mar 8 DRF1401 THN5601B
    Text: THN5601B NPN SiGe RF POWER TRANSISTOR The THN5601B is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-223 SMD package. The THN5601B can be used as a driver device or an output device, depending on the specific application.


    Original
    PDF THN5601B THN5601B OT-223 900MHz Mar-22-2005 100nF 100pF smd transistor zl rf transistor mar 8 DRF1401

    XS 630 B

    Abstract: ic smd a 1712 THN5602F NPN medium power transistor in a smd CIRCUIT SCHEMATIC diagram Transistor B 1566
    Text: THN5602F SOT-89 NPN SiGe RF POWER TRANSISTOR The THN5602F is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor 4 encapsulated in a plastic SOT-89 SMD package. The THN5602F can be used as a driver device or an output device, depending on the specific application.


    Original
    PDF THN5602F OT-89 THN5602F OT-89 465MHz 100nF XS 630 B ic smd a 1712 NPN medium power transistor in a smd CIRCUIT SCHEMATIC diagram Transistor B 1566

    2SC3837K

    Abstract: NF marking TRANSISTOR SMD
    Text: Transistors SMD Type Power Transistor 2SC3837K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 Small rbb'.Cc and high gain. Typ. 6ps 1 0.55 High transition frequency. (Typ. fT = 1.5GHz) +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base


    Original
    PDF 2SC3837K OT-23 20mA/4mA 200MHz 200MHz 2SC3837K NF marking TRANSISTOR SMD

    CNY17 optocoupler

    Abstract: CNY17-X-000E avago CNY17-3 CNY17-X CNY17 CNY17-1 CNY17-2 CNY17-3 CNY17-X-060E CNY17-X-300E
    Text: CNY17-x Phototransistor Optocoupler High Collector-EmitterVoltage Type Data Sheet Description The CNY17 contains a light emitting diode optically coupled to a photo-transistor. It is packaged in a 6-pin DIP package and available in wide-lead spacing option and lead bend SMD option. Collector-emitter


    Original
    PDF CNY17-x CNY17 CNY17-3-XXXE 5989-0290EN 5989-1736EN CNY17 optocoupler CNY17-X-000E avago CNY17-3 CNY17-X CNY17-1 CNY17-2 CNY17-3 CNY17-X-060E CNY17-X-300E

    cny17-3 options

    Abstract: acny17 0536e CNY17-2-W00E CNY17-2 SMD ICS CNY17-X-000E transistor smd CF AVAGO 500E CATHODE RAY TUBE CNY17
    Text: CNY17-x Phototransistor Optocoupler High Collector-EmitterVoltage Type Data Sheet Description The CNY17 contains a light emitting diode optically coupled to a photo-transistor. It is packaged in a 6-pin DIP package and available in wide-lead spacing option and lead bend SMD option. Collector-emitter


    Original
    PDF CNY17-x CNY17 5989-1736EN AV01-0536EN cny17-3 options acny17 0536e CNY17-2-W00E CNY17-2 SMD ICS CNY17-X-000E transistor smd CF AVAGO 500E CATHODE RAY TUBE

    transistor SMD 12E

    Abstract: SMD 6PIN IC MARKING CODE TRANSISTOR SMD MARKING CODE ad SMD 6PIN IC MARKING CODE p BFS36
    Text: BFS469L6 NPN Silicon RF TWIN Transistor* • Low voltage/ low current applications 4 • Ideal for VCO modules and low noise amplifiers • World's smallest SMD 6-pin leadless package 3 5 2 6 1 • Built in 2 transitors TR1: die as BFR460L3, TR2: die as BFR949L3


    Original
    PDF BFS469L6 BFR460L3, BFR949L3) transistor SMD 12E SMD 6PIN IC MARKING CODE TRANSISTOR SMD MARKING CODE ad SMD 6PIN IC MARKING CODE p BFS36

    SMD 6PIN IC MARKING CODE

    Abstract: marking code CB SMD ic TRANSISTOR SMD MARKING CODE ce ce BFS469L6 MARKING CODE SMD IC TRANSISTOR SMD MARKING CODE ad BFR460L3 BFR949L3 BFS360L6 marking code CB SMD tr2
    Text: BFS469L6 NPN Silicon RF TWIN Transistor* • Low voltage/ low current applications 4 • Ideal for VCO modules and low noise amplifiers • World's smallest SMD 6-pin leadless package 3 5 2 6 1 • Built in 2 transitors TR1: die as BFR460L3, TR2: die as BFR949L3


    Original
    PDF BFS469L6 BFR460L3, BFR949L3) SMD 6PIN IC MARKING CODE marking code CB SMD ic TRANSISTOR SMD MARKING CODE ce ce BFS469L6 MARKING CODE SMD IC TRANSISTOR SMD MARKING CODE ad BFR460L3 BFR949L3 BFS360L6 marking code CB SMD tr2

    marking code CB SMD tr2

    Abstract: TRANSISTOR SMD MARKING CODE ce marking code CB SMD ic MARKING CODE SMD IC BFR360L3 BFR460L3 BFS360L6 BFS466L6 SMD 6PIN IC MARKING CODE SMD MARKING CODE 102c
    Text: BFS466L6 NPN Silicon RF TWIN Transistor* • Low voltage/ low current applications 4 • Ideal for VCO modules and low noise amplifiers • World's smallest SMD 6-pin leadless package 3 5 2 6 1 • Built in 2 transitors TR1: die as BFR460L3, TR2: die as BFR360L3


    Original
    PDF BFS466L6 BFR460L3, BFR360L3) marking code CB SMD tr2 TRANSISTOR SMD MARKING CODE ce marking code CB SMD ic MARKING CODE SMD IC BFR360L3 BFR460L3 BFS360L6 BFS466L6 SMD 6PIN IC MARKING CODE SMD MARKING CODE 102c

    cny17y

    Abstract: AV02-0772EN CNY17-2-W00E AVAGO 500E cny17-1 datasheet CNY17-X-000E CNY17 CNY17 optocoupler
    Text: CNY17-x Phototransistor Optocoupler High Collector-Emitter Voltage Type Data Sheet Description The CNY17 contains a light emitting diode optically coupled to a photo-transistor. It is packaged in a 6-pin DIP package and available in wide-lead spacing option and lead bend SMD option. Collector-emitter


    Original
    PDF CNY17-x CNY17 AV01-0536EN AV02-0772EN cny17y CNY17-2-W00E AVAGO 500E cny17-1 datasheet CNY17-X-000E CNY17 optocoupler

    K1 MARK 6PIN

    Abstract: TRANSISTOR SMD MARKING CODE 2x SMD 6PIN IC MARKING CODE marking code E2 p SMD Transistor Transistors smd mark code SMD MARKING code 1G SMD 6PIN IC MARKING CODE p marking 4B2 TRANSISTOR SMD MARKING CODE 2x I MARKING CODE SMD zs
    Text: BFS460L6 NPN Silicon RF TWIN Transistor 4 • High fT of 22 GHz 3 5 • For low voltage / low current applications 2 6 • Ideal for VCO modules and low noise amplifiers 1 • Low noise figure: 1.1 dB at 1.8 GHz • World's smallest SMD 6-pin leadless package


    Original
    PDF BFS460L6 BFR460L3) K1 MARK 6PIN TRANSISTOR SMD MARKING CODE 2x SMD 6PIN IC MARKING CODE marking code E2 p SMD Transistor Transistors smd mark code SMD MARKING code 1G SMD 6PIN IC MARKING CODE p marking 4B2 TRANSISTOR SMD MARKING CODE 2x I MARKING CODE SMD zs

    Untitled

    Abstract: No abstract text available
    Text: BFS460L6 NPN Silicon RF TWIN Transistor 4 • High fT of 22 GHz 3 5 • For low voltage / low current applications 2 6 • Ideal for VCO modules and low noise amplifiers 1 • Low noise figure: 1.1 dB at 1.8 GHz • World's smallest SMD 6-pin leadless package


    Original
    PDF BFS460L6 BFR460L3)

    SMD 6PIN IC MARKING CODE

    Abstract: SMD 6PIN IC MARKING CODE p marking code E2 p SMD Transistor TRANSISTOR SMD MARKING CODE ag MARKING CODE SMD IC marking MARKING CODE SMD zs BFR460L3 BFS360L6 BFS36
    Text: BFS460L6 NPN Silicon RF TWIN Transistor* • High fT of 22 GHz 4 • For low voltage / low current applications 3 5 • Ideal for VCO modules and low noise amplifiers 2 6 1 • Low noise figure: 1.1 dB at 1.8 GHz • World's smallest SMD 6-pin leadless package


    Original
    PDF BFS460L6 BFR460L3) SMD 6PIN IC MARKING CODE SMD 6PIN IC MARKING CODE p marking code E2 p SMD Transistor TRANSISTOR SMD MARKING CODE ag MARKING CODE SMD IC marking MARKING CODE SMD zs BFR460L3 BFS360L6 BFS36

    zs transistor

    Abstract: BFR460L3 BFS460L6 smd transistor marking zs smd transistor 6b1 smd transistor zl
    Text: BFS460L6 NPN Silicon RF TWIN Transistor 4 • High fT of 22 GHz 3 5 • For low voltage / low current applications 2 6 • Ideal for VCO modules and low noise amplifiers 1 • Low noise figure: 1.1 dB at 1.8 GHz • World's smallest SMD 6-pin leadless package


    Original
    PDF BFS460L6 BFR460L3) Jun-15-2004 zs transistor BFR460L3 BFS460L6 smd transistor marking zs smd transistor 6b1 smd transistor zl

    smd transistor 6b1

    Abstract: smd transistor marking zs ZL 58 smd transistor zl BFR460L3 MARKING SMD NPN TRANSISTOR BR smd transistor 1c1 smd marking AB 6 PIN
    Text: BFS460L6 NPN Silicon RF TWIN Transistor 4 • High fT of 22 GHz 3 5 • For low voltage / low current applications 2 6 • Ideal for VCO modules and low noise amplifiers 1 • Low noise figure: 1.1 dB at 1.8 GHz • World's smallest SMD 6-pin leadless package


    Original
    PDF BFS460L6 BFR460L3) Aug-04-2004 smd transistor 6b1 smd transistor marking zs ZL 58 smd transistor zl BFR460L3 MARKING SMD NPN TRANSISTOR BR smd transistor 1c1 smd marking AB 6 PIN

    marking code E2 p SMD Transistor

    Abstract: smd marking CODE 1c1 SMD 6PIN IC MARKING CODE p SMD 6PIN IC MARKING CODE 4b2 marking TRANSISTOR SMD MARKING CODE ag BFS36 transistor smd marking Ag
    Text: BFS460L6 NPN Silicon RF TWIN Transistor* • High fT of 22 GHz 4 • For low voltage / low current applications 3 5 • Ideal for VCO modules and low noise amplifiers 2 6 1 • Low noise figure: 1.1 dB at 1.8 GHz • World's smallest SMD 6-pin leadless package


    Original
    PDF BFS460L6 BFR460L3) marking code E2 p SMD Transistor smd marking CODE 1c1 SMD 6PIN IC MARKING CODE p SMD 6PIN IC MARKING CODE 4b2 marking TRANSISTOR SMD MARKING CODE ag BFS36 transistor smd marking Ag

    smd transistor 6b1

    Abstract: smd transistor marking zs BFS460L6 smd transistor marking sep smd transistor zl BFR460L3 6B1 transistor smd 6 pin
    Text: BFS460L6 NPN Silicon RF TWIN Transistor 4 Preliminary data • High fT of 22 GHz 3 5 • For low voltage / low current applications 2 6 • Ideal for VCO modules and low noise amplifiers 1 • Low noise figure: 1.1 dB at 1.8 GHz • World's smallest SMD 6-pin leadless package


    Original
    PDF BFS460L6 BFR460L3) Sep-01-2003 smd transistor 6b1 smd transistor marking zs BFS460L6 smd transistor marking sep smd transistor zl BFR460L3 6B1 transistor smd 6 pin

    BFR460

    Abstract: No abstract text available
    Text: BFS466L6 NPN Silicon RF TWIN Transistor 4 Preliminary data • Low voltage/ low current applications 3 5 • Ideal for VCO modules and low noise amplifiers 2 6 • Low noise figure: TR1: 1.1dB at 1.8 GHz 1 TR2: 1.0 dB at 1.8 GHz • World's smallest SMD 6-pin leadless package


    Original
    PDF BFS466L6 BFR460L3, BFR360L3) Sep-01-2003 BFR460