TRANSISTOR BC 448 smd
Abstract: JA101P smd transistor npn 491 transistor TO-92 bc108 transistor pn2222 BC853B transistor MPSA77 jc5010 215 BC307 smd 2PB601A
Text: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page 38 41 44 44 45 46 47 48 48 48 General purpose amplification and switching transistors Low-power transistors 17 Transistor arrays 22 Medium-power transistors 23 24 Power transistors
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BRY61
BRY62
OT143B
TRANSISTOR BC 448 smd
JA101P
smd transistor npn 491
transistor TO-92 bc108
transistor pn2222
BC853B
transistor MPSA77
jc5010 215
BC307 smd
2PB601A
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PBHV8540T
Abstract: PBHV9040T MARKING CODE SMD IC npn transistor w5 NXP TRANSISTOR SMD MARKING CODE SOT23
Text: PBHV9040T 500 V, 0.25 A PNP high-voltage low VCEsat BISS transistor Rev. 01 — 13 February 2008 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
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PBHV9040T
O-236AB)
PBHV8540T.
AEC-Q101
PBHV9040T
PBHV8540T
MARKING CODE SMD IC
npn transistor w5
NXP TRANSISTOR SMD MARKING CODE SOT23
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V9040Z
Abstract: PBHV9040Z PBHV8540Z SC-73 MARKING SMD IC CODE 10 pin
Text: PBHV9040Z 500 V, 0.25 A PNP high-voltage low VCEsat BISS transistor Rev. 02 — 15 January 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.
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PBHV9040Z
OT223
SC-73)
PBHV8540Z.
AEC-Q101
PBHV9040Z
V9040Z
PBHV8540Z
SC-73
MARKING SMD IC CODE 10 pin
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PBHV8540T
Abstract: PBHV9040T MARKING CODE SMD IC
Text: PBHV9040T 500 V, 0.25 A PNP high-voltage low VCEsat BISS transistor Rev. 02 — 15 January 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
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PBHV9040T
O-236AB)
PBHV8540T.
AEC-Q101
PBHV9040T
PBHV8540T
MARKING CODE SMD IC
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V9040Z
Abstract: SOT223 nxp packing PBHV8540Z PBHV9040Z SC-73 MARKING CODE SMD IC
Text: PBHV9040Z 500 V, 0.25 A PNP high-voltage low VCEsat BISS transistor Rev. 01 — 19 February 2008 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.
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PBHV9040Z
OT223
SC-73)
PBHV8540Z.
AEC-Q101
PBHV9040Z
V9040Z
SOT223 nxp packing
PBHV8540Z
SC-73
MARKING CODE SMD IC
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Untitled
Abstract: No abstract text available
Text: SO T8 9 PBHV9040X 500 V, 0.25 A PNP high-voltage low VCEsat BISS transistor 9 December 2013 Product data sheet 1. General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package.
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PBHV9040X
SC-62)
PBHV8540X.
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: SO T8 83 PMZ370UNE 30 V, N-channel Trench MOSFET 14 May 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench
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PMZ370UNE
DFN1006-3
OT883)
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Untitled
Abstract: No abstract text available
Text: SO T8 83 PMZ600UNE 20 V, N-channel Trench MOSFET 9 May 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench
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PMZ600UNE
DFN1006-3
OT883)
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Untitled
Abstract: No abstract text available
Text: SO T8 83 PMZ600UNE 20 V, N-channel Trench MOSFET 26 June 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench
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PMZ600UNE
DFN1006-3
OT883)
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Untitled
Abstract: No abstract text available
Text: SO T8 83 PMZ950UPE 20 V, P-channel Trench MOSFET 8 May 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench
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PMZ950UPE
DFN1006-3
OT883)
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Untitled
Abstract: No abstract text available
Text: SO T8 83 PMZ350UPE 20 V, P-channel Trench MOSFET 14 May 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench
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PMZ350UPE
DFN1006-3
OT883)
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Untitled
Abstract: No abstract text available
Text: SO T8 83 PMZ290UNE 20 V, N-channel Trench MOSFET 14 May 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench
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PMZ290UNE
DFN1006-3
OT883)
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Untitled
Abstract: No abstract text available
Text: SO T8 83 PMZ950UPE 20 V, P-channel Trench MOSFET 10 July 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench
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PMZ950UPE
DFN1006-3
OT883)
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Untitled
Abstract: No abstract text available
Text: SO T8 83 B PMZB600UNE 20 V, N-channel Trench MOSFET 21 July 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
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PMZB600UNE
DFN1006B-3
OT883B)
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Untitled
Abstract: No abstract text available
Text: PMZB300XN 20 V, single N-channel Trench MOSFET 1 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
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PMZB300XN
DFN1006B-3
OT883B)
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Untitled
Abstract: No abstract text available
Text: PMG45UN 20 V, single N-channel Trench MOSFET 13 November 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT363 (SC-88) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMG45UN
OT363
SC-88)
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Untitled
Abstract: No abstract text available
Text: PMZB380XN 30 V, single N-channel Trench MOSFET 1 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
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PMZB380XN
DFN1006B-3
OT883B)
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Untitled
Abstract: No abstract text available
Text: SO T8 83 B PMZB950UPE 20 V, P-channel Trench MOSFET 28 July 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
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PMZB950UPE
DFN1006B-3
OT883B)
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03AF6
Abstract: No abstract text available
Text: PMZB790SN 60 V, single N-channel Trench MOSFET 14 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
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PMZB790SN
DFN1006B-3
OT883B)
03AF6
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Untitled
Abstract: No abstract text available
Text: SO T8 83 PMZ290UN 20 V, single N-channel Trench MOSFET 6 November 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless and ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench
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PMZ290UN
DFN1006-3
OT883)
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BUZ102
Abstract: smd transistor py
Text: SIEMENS BUZ 102 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dvfdt rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type Vbs BUZ102 50 V b 42 A flbston Package Ordering Code
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O-220
BUZ102
C67078-S1351-A2
BUZ102
smd transistor py
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NXP SMD TRANSISTOR MARKING CODE s1
Abstract: No abstract text available
Text: DF N2 020 -6 PMDPB760EN 100 V, dual N-channel Trench MOSFET 29 May 2013 Objective data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using
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PMDPB760EN
DFN2020-6
OT1118)
NXP SMD TRANSISTOR MARKING CODE s1
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Untitled
Abstract: No abstract text available
Text: 83B PMZB670UPE SO T8 20 V, single P-channel Trench MOSFET Rev. 1 — 31 January 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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PMZB670UPE
OT883B
AEC-Q101
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BUZ111SL
Abstract: Q67040-S4003-A2 SPP80N05
Text: BUZ111SL SPP80N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code
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BUZ111SL
SPP80N05L
O-220
Q67040-S4003-A2
28/Jan/1998
BUZ111SL
Q67040-S4003-A2
SPP80N05
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