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    SMD TRANSISTOR DS 65 Search Results

    SMD TRANSISTOR DS 65 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLM15PX121BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 120ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX181SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 180ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM21HE802SN1L Murata Manufacturing Co Ltd FB SMD 0805inch 8000ohm NONAUTO Visit Murata Manufacturing Co Ltd
    BLM15PX330BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 33ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX600SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 60ohm POWRTRN Visit Murata Manufacturing Co Ltd

    SMD TRANSISTOR DS 65 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    057N08N

    Abstract: 054N08N ipp06cn08n IEC61249-2-21 PG-TO220-3 IPB054N08N3 G
    Text: IPP057N08N3 G IPI057N08N3 G IPB054N08N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) • Very low on-resistance R DS(on) V DS 80 V R DS(on),max (SMD) 5.4 mΩ ID 80 A


    Original     		IPP057N08N3 IPI057N08N3 IPB054N08N3 IPP06CN08N IEC61249-2-21 PG-TO220-3 PG-TO262-3 057N08N 054N08N ipp06cn08n IEC61249-2-21 PG-TO220-3 IPB054N08N3 G PDF

    057N08N

    Abstract: 054n08n DSV80 IPB054N08N3-G ipp06cn08n PG-TO220-3 IPP057N08N3 G IPP057N08N3
    Text: IPP057N08N3 G IPI057N08N3 G IPB054N08N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 80 V R DS(on),max (SMD) 5.4 mΩ ID 80 A • Very low on-resistance R DS(on)


    Original     		IPP057N08N3 IPI057N08N3 IPB054N08N3 IPP06CN08N PG-TO220-3 PG-TO262-3 PG-TO263-3 057N08N 054n08n DSV80 IPB054N08N3-G ipp06cn08n PG-TO220-3 IPP057N08N3 G PDF

    093N06N

    Abstract: 090N06N IEC61249-2-21 JESD22 PG-TO220-3 marking D50 IPP093N06N3
    Text: Type IPB090N06N3 G IPP093N06N3 G OptiMOS 3 Power-Transistor Product Summary Features • for sync. rectification, drives and dc/dc SMPS • Excellent gate charge x R DS on product (FOM) V DS 60 V R DS(on),max (SMD) 9 mΩ ID 50 A • Very low on-resistance R DS(on)


    Original     		IPB090N06N3 IPP093N06N3 IEC61249-2-21 PG-TO263-3 PG-TO220-3 090N06N 093N06N 093N06N 090N06N IEC61249-2-21 JESD22 PG-TO220-3 marking D50 PDF

    093N06N

    Abstract: 090N06N JESD22 PG-TO220-3
    Text: IPB090N06N3 G IPP093N06N3 G Type OptiMOS 3 Power-Transistor Product Summary Features • for sync. rectification, drives and dc/dc SMPS • Excellent gate charge x R DS on product (FOM) V DS 60 V R DS(on),max (SMD) 9 mΩ ID 50 A • Very low on-resistance R DS(on)


    Original     		IPB090N06N3 IPP093N06N3 PG-TO263-3 PG-TO220-3 090N06N 093N06N 093N06N 090N06N JESD22 PG-TO220-3 PDF

    040n06n

    Abstract: 037N06N 040n06 d90 smd JESD22 PG-TO220-3
    Text: IPB037N06N3 G Type IPI040N06N3 G IPP040N06N3 G OptiMOS 3 Power-Transistor Product Summary Features • for sync. rectification, drives and dc/dc SMPS • Excellent gate charge x R DS on product (FOM) V DS 60 V R DS(on),max (SMD) 3.7 mΩ ID 90 A • Very low on-resistance R DS(on)


    Original     		IPB037N06N3 IPI040N06N3 IPP040N06N3 IPP04xN06N IPI04xN06N IPB04xN06N PG-TO263-3 040n06n 037N06N 040n06 d90 smd JESD22 PG-TO220-3 PDF

    040n06n

    Abstract: 037N06N IEC61249-2-21 PG-TO220-3 PG-TO262-3
    Text: Type IPB037N06N3 G IPI040N06N3 G IPP040N06N3 G OptiMOS 3 Power-Transistor Product Summary Features V DS 60 V • for sync. rectification, drives and dc/dc SMPS R DS on ,max (SMD) 3.7 mΩ • Excellent gate charge x R DS(on) product (FOM) ID 90 A previous engineering


    Original     		IPB037N06N3 IPI040N06N3 IPP040N06N3 IPP04xN06N IPI04xN06N IPB04xN06N IEC61249-2-21 040n06n 037N06N IEC61249-2-21 PG-TO220-3 PG-TO262-3 PDF

    139n08n

    Abstract: D225 SMD 136N08N IEC61249-2-21 IPP139N08N3 PG-TO-220-3 SMD F45 IPP139N08N3 G D225 Diode D45 1730
    Text: IPP139N08N3 G IPI139N08N3 G IPB136N08N3 G OptiMOS 3 Power-Transistor Product Summary Features 80 V DS • Ideal for high frequency switching 13.6 R DS on ,max (SMD) • Optimized technology for DC/DC converters V mΩ 45 ID A • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPP139N08N3 IPI139N08N3 IPB136N08N3 IEC61249-2-21 PG-TO-220-3 PG-TO-262-3 PG-TO-263-3 139n08n D225 SMD 136N08N IEC61249-2-21 PG-TO-220-3 SMD F45 IPP139N08N3 G D225 Diode D45 1730 PDF

    057N06N

    Abstract: 054N06N IEC61249-2-21 JESD22 PG-TO220-3 ua358
    Text: Type IPB054N06N3 G IPP057N06N3 G OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS on ,max (SMD) 5.4 mΩ ID 80 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPB054N06N3 IPP057N06N3 IEC61249-2-21 PG-TO263-3 PG-TO220-3 054N06N 057N06N 057N06N 054N06N IEC61249-2-21 JESD22 PG-TO220-3 ua358 PDF

    052N06L

    Abstract: IEC61249-2-21 IPP052N06L3 JESD22 PG-TO220-3 gs 05 24 gd 2
    Text: Type IPB049N06L3 G IPP052N06L3 G OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS on ,max (SMD) 4.7 mΩ ID 80 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPB049N06L3 IPP052N06L3 IEC61249-2-21 PG-TO263-3 PG-TO220-3 049N06L 052N06L 052N06L IEC61249-2-21 JESD22 PG-TO220-3 gs 05 24 gd 2 PDF

    139n08n

    Abstract: D225 SMD SMD diode D45 136N08N MARKING d45 139N08 PG-TO IPP139N08N3 JESD22 PG-TO-220-3
    Text: IPP139N08N3 G IPI139N08N3 G IPB136N08N3 G OptiMOS TM 3 Power-Transistor Product Summary Features V DS • Ideal for high frequency switching 80 R DS(on),max (SMD) • Optimized technology for DC/DC converters V 13.6 ID mΩ 45 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPP139N08N3 IPI139N08N3 IPB136N08N3 PG-TO-220-3 PG-TO-262-3 PG-TO-263-3 139N08N 139n08n D225 SMD SMD diode D45 136N08N MARKING d45 139N08 PG-TO JESD22 PG-TO-220-3 PDF

    084N06L

    Abstract: IPP084N06L3G IEC61249-2-21 JESD22 PG-TO220-3 081N06L
    Text: Type IPB081N06L3 G IPP084N06L3 G OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS on ,max (SMD) 8.1 mΩ ID 50 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPB081N06L3 IPP084N06L3 IEC61249-2-21 PG-TO263-3 PG-TO220-3 081N06L 084N06L 084N06L IPP084N06L3G IEC61249-2-21 JESD22 PG-TO220-3 081N06L PDF

    037N06L

    Abstract: 034N06L IPI037N06L3 IEC61249-2-21 PG-TO-220-3 IPP037N06L3 G
    Text: Type IPB034N06L3 G IPI037N06L3 G IPP037N06L3 G OptiMOS 3 Power-Transistor Product Summary Features V DS 60 V • Ideal for high frequency switching and sync. rec. R DS on ,max (SMD) 3.4 mΩ • Optimized technology for DC/DC converters ID 90 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPB034N06L3 IPI037N06L3 IPP037N06L3 IPP04xN06L IPI04xN06L IPB04xN06L IEC61249-2-21 037N06L 034N06L IEC61249-2-21 PG-TO-220-3 IPP037N06L3 G PDF

    100n08n

    Abstract: IPB097N08N3 IEC61249-2-21 PG-TO220-3
    Text: IPP100N08N3 G IPI100N08N3 G IPB097N08N3 G OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 80 V R DS on ,max (SMD) 9.7 mΩ ID 70 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPP100N08N3 IPI100N08N3 IPB097N08N3 IEC61249-2-21 PG-TO220-3 PG-TO262-3 PG-TO263-3 100n08n IEC61249-2-21 PG-TO220-3 PDF

    067N08N

    Abstract: 070N08N smd marking D36 PG-TO220-3 IEC61249-2-21
    Text: IPP070N08N3 G IPI070N08N3 G IPB067N08N3 G OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 80 V R DS on ,max (SMD) 6.7 mΩ ID 80 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPP070N08N3 IPI070N08N3 IPB067N08N3 IEC61249-2-21 PG-TO220-3 PG-TO262-3 PG-TO263-3 067N08N 070N08N smd marking D36 PG-TO220-3 IEC61249-2-21 PDF

    097N08N

    Abstract: 100n08n IPP100N08N3 G PG-TO220-3 JESD22 652 smd D46 diode
    Text: IPP100N08N3 G IPI100N08N3 G IPB097N08N3 G OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 80 V R DS(on),max (SMD) 9.7 mΩ ID 70 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPP100N08N3 IPI100N08N3 IPB097N08N3 PG-TO220-3 PG-TO262-3 PG-TO263-3 100N08N 097N08N 100n08n IPP100N08N3 G PG-TO220-3 JESD22 652 smd D46 diode PDF

    024N06N

    Abstract: 021N06N PG-TO220-3 IEC61249-2-21 IPI024N06N3 G
    Text: Type IPB021N06N3 G IPI024N06N3 G IPP024N06N3 G OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS on ,max (SMD) 2.1 mΩ ID 120 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPB021N06N3 IPI024N06N3 IPP024N06N3 IEC61249-2-21 PG-TO263-3 PG-TO262-3 PG-TO220-3 024N06N 021N06N PG-TO220-3 IEC61249-2-21 IPI024N06N3 G PDF

    052N06L

    Abstract: IPP052N06L3 JESD22 PG-TO220-3 58ua
    Text: IPB049N06L3 G IPP052N06L3 G Type OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max (SMD) 4.7 mΩ ID 80 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPB049N06L3 IPP052N06L3 PG-TO263-3 PG-TO220-3 049N06L 052N06L 052N06L JESD22 PG-TO220-3 58ua PDF

    084N06L

    Abstract: smd marking D50 081N06L JESD22 PG-TO220-3 ipp084n06 marking D50 IPB081N06L3 IPP084 D50A5
    Text: IPB081N06L3 G IPP084N06L3 G Type OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max (SMD) 8.1 mΩ ID 50 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPB081N06L3 IPP084N06L3 PG-TO263-3 PG-TO220-3 081N06L 084N06L 084N06L smd marking D50 081N06L JESD22 PG-TO220-3 ipp084n06 marking D50 IPP084 D50A5 PDF

    067N08N

    Abstract: 070N08N SMD MARKING d36 JESD22 PG-TO220-3 DD40
    Text: IPP070N08N3 G IPI070N08N3 G IPB067N08N3 G OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 80 V R DS(on),max (SMD) 6.7 mΩ ID 80 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPP070N08N3 IPI070N08N3 IPB067N08N3 PG-TO220-3 PG-TO262-3 PG-TO263-3 070N08N 067N08N 070N08N SMD MARKING d36 JESD22 PG-TO220-3 DD40 PDF

    057N06N

    Abstract: 054N06N JESD22 PG-TO220-3
    Text: IPB054N06N3 G IPP057N06N3 G Type OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max (SMD) 5.4 mΩ ID 80 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPB054N06N3 IPP057N06N3 PG-TO263-3 PG-TO220-3 054N06N 057N06N 057N06N 054N06N JESD22 PG-TO220-3 PDF

    084N06L

    Abstract: 081N06L
    Text: IPB081N06L3 G IPP084N06L3 G Type OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max (SMD) 8.1 mΩ ID 50 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPB081N06L3 IPP084N06L3 PG-TO263-3 081N06L PG-TO220-3 084N06L 084N06L 081N06L PDF

    Untitled

    Abstract: No abstract text available
    Text: IPB049N06L3 G IPP052N06L3 G Type OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max (SMD) 4.9 mΩ ID 80 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPB049N06L3 IPP052N06L3 PG-TO263-3 PG-TO220-3 049N06L 052N06L PDF

    070N06L

    Abstract: PG-TO-220-3 PG-TO220-3 g2ns 070N0 D53A
    Text: IPB070N06L G IPP070N06L G OptiMOS Power-Transistor Product Summary Features V DS • For fast switching converters and sync. rectification R DS on ,max • N-channel enhancement - logic level SMD version ID 60 V 6.7 m: 80 A • 175 °C operating temperature


    Original     		IPB070N06L IPP070N06L PG-TO263-3 PG-TO220-3 070N06L 070N06L PG-TO-220-3 PG-TO220-3 g2ns 070N0 D53A PDF

    085N06L

    Abstract: IPB085N06L smd marking g23 PG-TO220-3 marking g23 SMD
    Text: IPB085N06L G OptiMOS Power-Transistor IPP085N06L G Product Summary Features V DS • For fast switching converters and sync. rectification R DS on ,max • N-channel enhancement - logic level SMD version ID 60 V 8.2 m: 80 A • 175 °C operating temperature


    Original     		IPB085N06L IPP085N06L PG-TO263-3 P-TO262 PG-TO220-3 085N06L 085N06L smd marking g23 PG-TO220-3 marking g23 SMD PDF