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    SMD TRANSISTOR ISS 7 Search Results

    SMD TRANSISTOR ISS 7 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    SMD TRANSISTOR ISS 7 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    smd transistor ISS

    Abstract: 2SK3899 2SK38
    Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3899 +0.1 1.27-0.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 RDS on 2 = 6.5 mÙ MAX. (VGS = 4.5 V, ID = 42 A) Low C iss: C iss = 5500 pF TYP. +0.2 2.54-0.2 +0.2


    Original     		2SK3899 O-263 smd transistor ISS 2SK3899 2SK38 PDF

    smd transistor ISS

    Abstract: 2SK3900
    Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3900 +0.1 1.27-0.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 RDS on 2 = 10 mÙ MAX. (VGS = 4.5 V, ID = 41 A) Low C iss: C iss =3500 pF TYP. +0.2 2.54-0.2 +0.2


    Original     		2SK3900 O-263 smd transistor ISS 2SK3900 PDF

    smd transistor ISS

    Abstract: mosfet 20v 30A 2SK3901 SMD Transistor MU
    Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3901 +0.1 1.27-0.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Low On-state resistance 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low C iss: C iss =1950 pF TYP. +0.2 2.54-0.2 +0.2 15.25-0.2 RDS on 2 = 16.5 mÙ MAX. (VGS = 4.5 V, ID = 30A)


    Original     		2SK3901 O-263 smd transistor ISS mosfet 20v 30A 2SK3901 SMD Transistor MU PDF

    03 07 qfn 3x3

    Abstract: F QFN 3X3 16 pins qfn 3x3 qfn 3x3 16L XX1000-QT-EV1 XX1000-QT XX1000-QT-0G00 XX1000-QT-0G0T
    Text: 7.5-22.5/15.0-45.0 GHz Active Doubler QFN, 3x3 mm X1000-QT August 2007 - Rev 16-Aug-07 Features +17 dBm Output Power -20 dBc Fundamental Leakage SMD, 3x3 mm QFN Package RoHS Compliant 100% RF, DC and Output Power Testing General Description Mimix Broadband's 7.5-22.5/15.0-45.0 GHz SMD active


    Original     		X1000-QT 16-Aug-07 XX1000-QT 03 07 qfn 3x3 F QFN 3X3 16 pins qfn 3x3 qfn 3x3 16L XX1000-QT-EV1 XX1000-QT-0G00 XX1000-QT-0G0T PDF

    XX1000-QT

    Abstract: XX1000-QT-0G00 XX1000-QT-0G0T XX1000-QT-EV1 X1000-QT
    Text: 7.5-22.5/15.0-45.0 GHz Active Doubler QFN, 3x3 mm X1000-QT February 2007 - Rev 08-Feb-07 Features +17 dBm Output Power -20 dBc Fundamental Leakage SMD, 3x3 mm QFN Package RoHS Compliant 100% RF, DC and Output Power Testing General Description Mimix Broadband's 7.5-22.5/15.0-45.0 GHz SMD active


    Original     		X1000-QT 08-Feb-07 XX1000-QT XX1000-QT-0G00 XX1000-QT-0G0T XX1000-QT-EV1 X1000-QT PDF

    Untitled

    Abstract: No abstract text available
    Text: 7.5-22.5/15.0-45.0 GHz Active Doubler QFN, 3x3 mm X1000-QT August 2006 - Rev 16-Aug-06 Features +17 dBm Output Power -20 dBc Fundamental Leakage SMD, 3x3 mm QFN Package RoHS Compliant 100% RF, DC and Output Power Testing General Description Mimix Broadband's 7.5-22.5/15.0-45.0 GHz SMD active


    Original     		X1000-QT 16-Aug-06 XX1000-QT PDF

    Frequency Doubler use diode

    Abstract: F QFN 3X3 qfn 3x3 16L 28 qfn 3x3 XX1000-QT XX1000-QT-0G00 XX1000-QT-0G0T XX1000-QT-EV1
    Text: 7.5-22.5/15.0-45.0 GHz Active Doubler QFN, 3x3 mm X1000-QT April 2006 - Rev 28-Apr-06 Features +17 dBm Output Power -30 dBc Fundamental Leakage SMD, 3x3 mm QFN Package RoHS Compliant 100% RF, DC and Output Power Testing General Description Mimix Broadband's 7.5-22.5/15.0-45.0 GHz SMD active


    Original     		X1000-QT 28-Apr-06 XX1000-QT Frequency Doubler use diode F QFN 3X3 qfn 3x3 16L 28 qfn 3x3 XX1000-QT-0G00 XX1000-QT-0G0T XX1000-QT-EV1 PDF

    20 qfn 3x3

    Abstract: No abstract text available
    Text: 7.5-22.5/15.0-45.0 GHz Active Doubler QFN, 3x3 mm X1000-QT January 2008 - Rev 10-Jan-08 Features +18 dBm Output Power -20 dBc Fundamental Leakage SMD, 3x3 mm QFN Package RoHS Compliant 100% RF, DC and Output Power Testing General Description Mimix Broadband's 7.5-22.5/15.0-45.0 GHz SMD active


    Original     		10-Jan-08 X1000-QT 20 qfn 3x3 PDF

    13-Mar-10

    Abstract: qfn 3x3 16L XX1000-QT XX1000-QT-0G00 XX1000-QT-0G0T XX1000-QT-EV1 20 qfn 3x3
    Text: 7.5-22.5/15.0-45.0 GHz Active Doubler QFN, 3x3 mm X1000-QT March 2010 - Rev 13-Mar-10 Features +18 dBm Output Power -20 dBc Fundamental Leakage 3x3 mm QFN Package RoHS Compliant 100% RF, DC and Output Power Testing General Description Mimix Broadband's 7.5-22.5/15.0-45.0 GHz SMD active


    Original     		X1000-QT 13-Mar-10 13-Mar-10 qfn 3x3 16L XX1000-QT XX1000-QT-0G00 XX1000-QT-0G0T XX1000-QT-EV1 20 qfn 3x3 PDF

    Mimix Broadband

    Abstract: XX1000-QT XX1000-QT-0G00 XX1000-QT-0G0T XX1000-QT-EV1 20 qfn 3x3
    Text: 7.5-22.5/15.0-45.0 GHz Active Doubler QFN, 3x3 mm X1000-QT September 2010 - Rev 07-Sep-10 Features +18 dBm Output Power -20 dBc Fundamental Leakage 3x3 mm QFN Package RoHS Compliant 100% RF, DC and Output Power Testing General Description Mimix Broadband's 7.5-22.5/15.0-45.0 GHz SMD active


    Original     		X1000-QT 07-Sep-10 Mimix Broadband XX1000-QT XX1000-QT-0G00 XX1000-QT-0G0T XX1000-QT-EV1 20 qfn 3x3 PDF

    SMD Transistor 988

    Abstract: 20 QFN 3x3 F QFN 3X3 qfn 3x3 16L XX1000-QT XX1000-QT-0G00 XX1000-QT-0G0T XX1000-QT-EV1 ID214 X1000-QT
    Text: 7.5-22.5/15.0-45.0 GHz Active Doubler QFN, 3x3 mm X1000-QT April 2008 - Rev 19-Apr-08 Features +18 dBm Output Power -20 dBc Fundamental Leakage 3x3 mm QFN Package RoHS Compliant 100% RF, DC and Output Power Testing General Description Mimix Broadband's 7.5-22.5/15.0-45.0 GHz SMD active


    Original     		X1000-QT 19-Apr-08 SMD Transistor 988 20 QFN 3x3 F QFN 3X3 qfn 3x3 16L XX1000-QT XX1000-QT-0G00 XX1000-QT-0G0T XX1000-QT-EV1 ID214 X1000-QT PDF

    smd transistor ISS

    Abstract: 40V 60A MOSFET 2SK3813 SMD MU
    Text: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3813 TO-252 Features Low On-state resistance +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1 +0.28


    Original     		2SK3813 O-252 smd transistor ISS 40V 60A MOSFET 2SK3813 SMD MU PDF

    smd transistor ISS

    Abstract: 60V 60A TO-252 smd transistor 26 2SK3814
    Text: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3814 TO-252 Features Low On-state resistance +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1 +0.28


    Original     		2SK3814 O-252 smd transistor ISS 60V 60A TO-252 smd transistor 26 2SK3814 PDF

    SMD transistor Mu

    Abstract: smd mu diode smd transistor ISS smd diode Mu smd MU 78 DIODE SMD 2SK3794 mu diode SMD Transistor m.u DIODE SMD 10A
    Text: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3794 TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Low On-state resistance Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Built-in gate protection diode 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 0.127 max


    Original     		2SK3794 O-252 SMD transistor Mu smd mu diode smd transistor ISS smd diode Mu smd MU 78 DIODE SMD 2SK3794 mu diode SMD Transistor m.u DIODE SMD 10A PDF

    XX1000-QT

    Abstract: XX1000-QT-0G00 XX1000-QT-0G0T XX1000-QT-EV1 6TH 10
    Text: XX1000-QT Active Doubler 7.5-22.5/15.0-45.0 GHz Rev. V1 Features •     Functional Block Diagram +18 dBm Output Power -20 dBc Fundamental Leakage 3x3 mm QFN Package 100% RF, DC and Output Power Testing RoHS* Compliant and 260°C Reflow Compatible


    Original     		XX1000-QT XX1000-QT XX1000-QT-0G00 XX1000-QT-0G0T XX1000-QT-EV1 6TH 10 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPD 07N20 G SIPMOSÒ Power Transistor Features Product Summary • N channel Drain source voltage DS 200 V Drain-Source on-state resistance DS on 0.4 W 7 A · Enhancement mode Continuous drain current · Avalanche rated D · d /d rated Pin 1 Pin 2 Pin 3 Type


    Original     		07N20 SPD07N20 PG-TO252 SPU07N20 PG-TO251 SPD07N20 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPD 07N20 G SIPMOSÒ Power Transistor Features Product Summary • N channel Drain source voltage DS 200 V · Enhancement mode Drain-Source on-state resistance DS on 0.4 W · Avalanche rated Continuous drain current 7 A D · d /d rated Pin 1 Pin 2 Pin 3 Type


    Original     		07N20 SPD07N20 SPU07N20 PG-TO252 PG-TO251 SPD07N20 PDF

    SMD Transistor 30w

    Abstract: 945 TRANSISTOR PD57030S PD57030 XPD57030 XPD57030S
    Text: PD57030 PD57030S RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 30 W with 13 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE


    Original     		PD57030 PD57030S PD57030 PowerSO-10RF. SMD Transistor 30w 945 TRANSISTOR PD57030S XPD57030 XPD57030S PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification N-channel enhancement mode MOS transistor FEATURES BSH106 QUICK REFERENCE DATA SYMBOL d • Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package V qs = 20 V


    OCR Scan     		BSH106 BSH106 OT363 OT363 PDF

    ld smd transistor LD 33

    Abstract: BSH105N
    Text: Philips Semiconductors Product specification N-channel enhancement mode MOS transistor FEATURES BSH105 SYMBOL QUICK REFERENCE DATA • Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package v ns = 20 V


    OCR Scan     		BSH105 BSH105 ld smd transistor LD 33 BSH105N PDF

    smd transistor LY

    Abstract: smd transistor ISS smd transistor ISS 7
    Text: Product specification Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor DESCRIPTION P-channel vertical D-MOS transistor in SOT89 envelope and intended for use in relay, high-speed and line-transformer drivers, using SMD technology.


    OCR Scan     		BST120 MDA77S smd transistor LY smd transistor ISS smd transistor ISS 7 PDF

    smd transistor marking HA

    Abstract: TRANSISTOR SMD MARKING 2 HA SMD transistor code AL TRANSISTOR SMD MARKING CODE al SMD TRANSISTOR MARKING code DD Marking code m8t marking m8t TRANSISTOR SMD MARKING CODE dd SMD TRANSISTOR MARKING Dd
    Text: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor FEATURES BSN20W PINNING - SOT323 • Direct interface to C-MOS, TTL, etc. PIN SYMBOL • High-speed switching 1 g gate • No secondary breakdown. 2 s source


    OCR Scan     		BSN20W OT323 smd transistor marking HA TRANSISTOR SMD MARKING 2 HA SMD transistor code AL TRANSISTOR SMD MARKING CODE al SMD TRANSISTOR MARKING code DD Marking code m8t marking m8t TRANSISTOR SMD MARKING CODE dd SMD TRANSISTOR MARKING Dd PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification P-channel enhancement mode MOS transistor FEATURES BSH206 SYMBOL QUICK REFERENCE DATA VDS = -12 V • Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package


    OCR Scan     		BSH206 BSH206 OT363 OT363 PDF

    BSH205

    Abstract: smd transistor JE 45 smd transistor ISS smd transistor JE
    Text: Philips Semiconductors Product specification P-channel enhancement mode MOS transistor FEATURES BSH205 QUICK REFERENCE DATA SYMBOL VDS = -12 V • Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package


    OCR Scan     		BSH205 BSH205 smd transistor JE 45 smd transistor ISS smd transistor JE PDF