MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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Untitled
Abstract: No abstract text available
Text: PZT3904 _ / SILICON PLANAR EPITAXIAL TRANSISTOR NPN transistor in a microminiature SMD package SOT-223 . Designed prim arily fo r high-speed, saturated switching applications in industrial service. QUICK REFERENCE D ATA
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PZT3904
OT-223)
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Untitled
Abstract: No abstract text available
Text: PZT3906 _ SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a m icrominiature SMD package SOT-223 . Designed prim arily fo r high-speed, saturated switching applications in industrial service. QUICK REFERENCE D ATA
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PZT3906
OT-223)
25rom
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BLT50
Abstract: ptfe trimmer philips 100 pf film dielectric trimmer BLT50,115
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT50 UHF power transistor Product specification April 1991 Philips Semiconductors Product specification UHF power transistor FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability. BLT50 QUICK REFERENCE DATA
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BLT50
OT223
OT223
BLT50
771-BLT50115
ptfe trimmer philips 100 pf
film dielectric trimmer
BLT50,115
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smd transistor JJ
Abstract: t8 smd transistor smd NE mbc1B transistor 75 U50 BLT14
Text: Philips Semiconductors Preliminary specification UHF power transistor BLT14 FEATURES DESCRIPTION • High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic SOT96-1 S08 SMD package. • High gain • Internal pre-matched input.
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BLT14
OT96-1
MAM227
711062b
OT96-1.
smd transistor JJ
t8 smd transistor
smd NE
mbc1B
transistor 75 U50
BLT14
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BLT80 UHF power transistor Product specification Supersedes data of May 1992 1996 May 09 Philips Semiconductors Product specification UHF power transistor BLT80 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability.
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BLT80
OT223
OT223
MAM043
SCDS48
127061/1200/02/pp12
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R Y SMD TRANSISTOR
Abstract: 2L smd transistor AT 11-S-i smd transistor 2T SOT96-1 BLT13 D102 smd transistor nc 61 NCR100
Text: Preliminary specification Philips Semiconductors UHF power transistor BLT13 FEATURES DESCRIPTION • High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic SOT96-1 S08 SMD package. • High gain • Internal pre-matched input.
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BLT13
OT96-1
MAM227
OT96-1.
R Y SMD TRANSISTOR
2L smd transistor
AT 11-S-i
smd transistor 2T
SOT96-1
BLT13
D102
smd transistor nc 61
NCR100
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358 SMD transistor
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT80 UHF power transistor Product specification Supersedes data of May 1992 1996 May 09 Philips Semiconductors Product specification UHF power transistor BLT80 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability.
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BLT80
BLT80
OT223
MAM043
cir2724825
SCDS48
127061/1200/02/pp12
771-BLT80-T/R
358 SMD transistor
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Untitled
Abstract: No abstract text available
Text: Transistor IC Transistors IC Transistor DIP SMDType Type Type DIP SMD Type Product specification 2SB649A Features Collector-Emitter Voltage :-160V Collector Current :-1.5A 1 Emitter 2 Collector 3 Base Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage
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2SB649A
-160V
-55to
-10mA,
-600mA
-50mA
-150mA
-500mA
150mA
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Untitled
Abstract: No abstract text available
Text: • t.tS3^31 DDEbOOb fifl3 N AUER PHILIPS/DISCRETE APX PZT3906 b?E ]> J V. SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a microminiature SMD envelope SOT-223 . Designed primarily fo r high-speed, saturated switching applications in industrial service.
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PZT3906
OT-223)
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Transistor B 1566
Abstract: ic smd a 1712 smd transistor zl SMD l4 Transistor B 1566 Transistor SMD TRANSISTOR L6 smd transistor js RF transistor SOT-89 NPN medium power transistor in a smd transistor 1734
Text: UHF POWER TRANSISTOR DRF1402F NPN SiGe RF TRANSISTOR SOT-89 The DRF1402F is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-89 SMD package. 4 The DRF1402F can be used as a driver device or an output device, depending on the specific application
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DRF1402F
OT-89
DRF1402F
OT-89
465MHz
100nF
Transistor B 1566
ic smd a 1712
smd transistor zl
SMD l4 Transistor
B 1566 Transistor
SMD TRANSISTOR L6
smd transistor js
RF transistor SOT-89
NPN medium power transistor in a smd
transistor 1734
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transistor smd LC 77
Abstract: D103D smd transistor 2x5 smd transistor ne c2 BLT81 TRANSISTOR SMD catalog smd ic 611 SMD ic catalogue UHF POWER TRANSISTOR SMD Transistor 1c
Text: Philips Semiconductors Product specification UHF power transistor BLT81 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability. APPLICATIONS • Hand-held radio equipment in the 900 MHz communication band. C DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a
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BLT81
OT223
OT223
711002b
OT223.
transistor smd LC 77
D103D
smd transistor 2x5
smd transistor ne c2
BLT81
TRANSISTOR SMD catalog
smd ic 611
SMD ic catalogue
UHF POWER TRANSISTOR
SMD Transistor 1c
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Untitled
Abstract: No abstract text available
Text: • bbSBIBl 002b0D3 07M H A P X N AMER PHI LIPS/DISCRETE PZT3904 b7E D J V SILICON PLANAR EPITAXIAL TRANSISTOR NPN transistor in a microminiature SMD envelope SOT-223 . Designed primarily for high-speed, saturated switching applications in industrial service.
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002b0D3
PZT3904
OT-223)
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smd transistor kn
Abstract: PZT3906
Text: •I bbSBTBl OQELDOb 6fl3 H A P X PZT3906 b?E T> N AUER PHILIPS/DISCRETE SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a microminiature SMD envelope SOT-223 . Designed prim arily fo r high-speed, saturated switching applications in industrial service.
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PZT3906
OT-223)
10x10-"
smd transistor kn
PZT3906
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Untitled
Abstract: No abstract text available
Text: CERLED Ceramic Chip SMD SMD - Wide-Viewing Angle CR 10 TE Photo Transistor Description The solder pads provide an excellent heat sink. For multi-sensors just choose 2 or more CERLEDs. Clear epoxy lens. Special Type CR10TE-DLF with daylight filter on request.
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CR10TE-DLF)
DTS1005
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Untitled
Abstract: No abstract text available
Text: CERLED Ceramic Chip SMD SMD - Wide-Viewing Angle CR 50 TE Photo Transistor Description The solder pads provide an excellent heat sink. For multi-sensors just choose 2 or more CERLEDs. Clear epoxy lens. Special Type CR50TE-DLF with daylight filter on request.
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CR50TE-DLF)
DTS1005
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1N916
Abstract: PZT3904 smd transistor 3t
Text: • bbSBTBl 00Sb003 D7M H A P X N AMER PHILIPS/DISCRETE P ZT 3904 b?E T> SILICON PLANAR EPITAXIAL TRANSISTOR NPN transistor in a microminiature SMD envelope SOT-223 . Designed prim arily fo r high-speed, saturated switching applications in industrial service.
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002b003
PZT3904
OT-223)
1N916^
1N916(
7Z74968
1N916
PZT3904
smd transistor 3t
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smd transistor marking SL6
Abstract: SMD MARKING CODE hitachi SMD MARKING CODE sg 2SC5700 2SC5757 HTT1115S MARKING CODE SMD IC DSA003640 Hitachi DSA003640
Text: HTT1115S Silicon NPN Epitaxial Twin Transistor ADE–208–1440C Z Rev.3 Aug. 2001 Features • Include 2 transistors in a small size SMD package: SMFPAK–6(6 Leads: 1.5 x 1.1 x 0.55 mm) Q1: Equivalent Buffer transistor Q2: Equivalent OSC transistor 2SC5700
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HTT1115S
1440C
2SC5700
2SC5757
D-85622
D-85619
smd transistor marking SL6
SMD MARKING CODE hitachi
SMD MARKING CODE sg
2SC5700
2SC5757
HTT1115S
MARKING CODE SMD IC
DSA003640
Hitachi DSA003640
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smd transistor marking SL6
Abstract: SMD MARKING CODE hitachi HTT1213S marking code s21 SMD Transistor marking code e2 SMD Transistor SMD MARKING CODE sg 2SC5700 Hitachi transistor MARKING CODE SMD IC TRANSISTOR SMD fr
Text: HTT1213S Silicon NPN Epitaxial Twin Transistor ADE-208-1448 Z Preliminary Rev. 0 Aug. 2001 Features • Include 2 transistors in a small size SMD package: SMFPAK–6 (6 Leads: 1.5 x 1.1 x 0.55 mm) Q1: Equivalent Buffer Transistor Q2: Equivalent OSC Transistor
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HTT1213S
ADE-208-1448
2SC5700
D-85622
D-85619
smd transistor marking SL6
SMD MARKING CODE hitachi
HTT1213S
marking code s21 SMD Transistor
marking code e2 SMD Transistor
SMD MARKING CODE sg
2SC5700
Hitachi transistor
MARKING CODE SMD IC
TRANSISTOR SMD fr
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2SC5849
Abstract: 2SC5700 HTT1127E Transistors smd mark code 15 S2127 HITACHI SMD TRANSISTORS
Text: HTT1127E Silicon NPN Epitaxial Twin Transistor ADE-208-1540 Z Rev.0 Nov. 2002 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor Q2: Equivalent OSC transistor 2SC5700
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HTT1127E
ADE-208-1540
2SC5700
2SC5849
D-85622
D-85619
2SC5849
2SC5700
HTT1127E
Transistors smd mark code 15
S2127
HITACHI SMD TRANSISTORS
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smd transistor 2a
Abstract: 5a SMD Transistor
Text: Transistor IC Transistors Transistor DIP SMDType Type SMD Type Product specification 3DD13007 • Features TO-263 Unit: mm +0.1 1.27-0.1 ● High Speed Switching +0.2 4.57-0.2 +0.2 5.28-0.2 2 3 +0.1 0.81-0.1 2.54 +0.2 2.54-0.2 +0.2 2.54-0.2 0.1max +0.1 1.27-0.1
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3DD13007
O-263
smd transistor 2a
5a SMD Transistor
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SMD 6 PIN IC marking 20
Abstract: No abstract text available
Text: Transistors IC Transistor SMD SMD Type Type Product specification KMUN2214 SOT-23 • Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● Simplifies Circuit Design 0.4 3 1 0.55 ● Reduces Component Count +0.1 1.3-0.1 +0.1 2.4-0.1 ● Reduces Board Space 2 +0.1
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KMUN2214
OT-23
SMD 6 PIN IC marking 20
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smd transistor A6D
Abstract: No abstract text available
Text: Transistors IC Transistor SMD SMD Type Type Product specification KMUN2114 SOT-23 • Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● Simplifies Circuit Design 0.4 3 1 0.55 ● Reduces Component Count +0.1 1.3-0.1 +0.1 2.4-0.1 ● Reduces Board Space 2 +0.1
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KMUN2114
OT-23
smd transistor A6D
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Untitled
Abstract: No abstract text available
Text: Transistor IC Transistor Transistors DIP SMDType Type SMD Type Product specification 2SA1163 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 High hFE. 0.55 Small package. +0.1 1.3-0.1 +0.1 2.4-0.1 High voltage. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05
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2SA1163
OT-23
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