l14 254
Abstract: AN98017 transistor 935 SMD AL SMD transistor 821 ceramic capacitor Philips 2222-581 TRANSISTOR SMD catalog AN98019 AN98026 BLV904
Text: APPLICATION NOTE 5 W Class-AB Amplifier with the BLV904 for 935 − 960 MHz AN98019 Philips Semiconductors 5 W Class-AB Amplifier with the BLV904 for 935 − 960 MHz Application Note AN98019 INTRODUCTION This application note contains information on a 5 W class-AB amplifier based on the SMD transistor BLV904. The
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BLV904
AN98019
BLV904
BLV904.
OT409.
SCA57
l14 254
AN98017
transistor 935 SMD
AL SMD transistor
821 ceramic capacitor
Philips 2222-581
TRANSISTOR SMD catalog
AN98019
AN98026
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Untitled
Abstract: No abstract text available
Text: TCNT2000 www.vishay.com Vishay Semiconductors Reflective Optical Sensor with Transistor Output A E FEATURES • Package type: SMD • Detector type: phototransistor • Dimensions L x W x H in mm : 3.4 x 2.7 x 1.5 • Operating range within > 20 % relative collector
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TCNT2000
TCNT2000
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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TCNT2000
Abstract: Reflective Optical Sensor
Text: TCNT2000 www.vishay.com Vishay Semiconductors Reflective Optical Sensor with Transistor Output A E FEATURES • Package type: SMD • Detector type: phototransistor • Dimensions L x W x H in mm : 3.4 x 2.7 x 1.5 • Operating range within > 20 % relative collector
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TCNT2000
TCNT2000
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
Reflective Optical Sensor
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Zener diode smd marking 27
Abstract: 2A 5v ZENER DIODE smd zener diode 5v ZENER DIODE 2A SMD TRANSISTOR MARKING 2A 2SD2167
Text: Transistors SMD Type Power Transistor 2SD2167 Features Built-in zener diode between collector and base. Zener diode has low voltage dispersion. Strong protection against reverse power surges due to low loads. PC=2 W on 40 40 0.7mm ceramic board . Absolute Maximum Ratings Ta = 25
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2SD2167
30MHz
Zener diode smd marking 27
2A 5v ZENER DIODE
smd zener diode 5v
ZENER DIODE 2A
SMD TRANSISTOR MARKING 2A
2SD2167
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sc74750
Abstract: MSE-200 PESD5VOL4UW KMZ52 kmz51 smd transistor BC557 PBLS1504V 2n5551 smd PMBS3904, PMSS3904 sc7921
Text: Discretes For Bipolar Transistors and Discrete MOSFETs please check the Power Management Chapter, pages 189-239. For RF Consumer Products please find following tables in the RF Products Chapter from page 252 onwards: RF PIN diodes RF Bandswitch diodes RF Varicap diodes
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OT346
SC-59)
sc74750
MSE-200
PESD5VOL4UW
KMZ52
kmz51
smd transistor BC557
PBLS1504V
2n5551 smd
PMBS3904, PMSS3904
sc7921
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BLF6G22LS-100
Abstract: RF35 TRANSISTOR SMD BV
Text: BLF6G22LS-100 Power LDMOS transistor Rev. 01 — 18 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance
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BLF6G22LS-100
BLF6G22LS-100
RF35
TRANSISTOR SMD BV
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TRANSISTOR j412
Abstract: J412 - TRANSISTOR SMD BLF6G38S-25
Text: BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 01 — 18 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1.
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BLF6G38-25;
BLF6G38S-25
ACPR885k
ACPR1980k
IS-95
BLF6G38-25
BLF6G38S-25
TRANSISTOR j412
J412 - TRANSISTOR SMD
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C5750X7R1H106M
Abstract: BLF6G20LS-140 C4532X7R1H475M RF35 smd transistor equivalent table
Text: BLF6G20LS-140 Power LDMOS transistor Rev. 01 — 27 February 2009 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance
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BLF6G20LS-140
BLF6G20LS-140
C5750X7R1H106M
C4532X7R1H475M
RF35
smd transistor equivalent table
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Untitled
Abstract: No abstract text available
Text: BLF8G19LS-170BV Power LDMOS transistor Rev. 2 — 28 March 2013 Product data sheet 1. Product profile 1.1 General description 170 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 1990 MHz.
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BLF8G19LS-170BV
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transistor SMD g 28
Abstract: No abstract text available
Text: BLF8G20LS-400PV; BLF8G20LS-400PGV Power LDMOS transistor Rev. 3 — 3 June 2014 Product data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1805 MHz to 1995 MHz.
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BLF8G20LS-400PV;
BLF8G20LS-400PGV
BLF8G20LS-400PV
LS-400PGV
transistor SMD g 28
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transistor SMD p90
Abstract: transistor 431 smd T1G6001528-Q3 smd transistor 901 100A150JW500XC EAR99 RO3203 S2834 431 TRANSISTOR smd
Text: T1G6001528-Q3 DC – 6 GHz 18 W GaN RF Power Transistor Applications • • • • • • • General Purpose RF Power Jammers Military and Civilian Radar Professional and Military radio systems Wideband amplifiers Test instrumentation Avionics Product Features
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T1G6001528-Q3
T1G6001528-Q3
transistor SMD p90
transistor 431 smd
smd transistor 901
100A150JW500XC
EAR99
RO3203
S2834
431 TRANSISTOR smd
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transistor d 1302
Abstract: smd transistor 927 smd transistor equivalent table Duroid 6006 sot922 radar circuit component
Text: BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 02 — 18 June 2009 Preliminary data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance
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BLS6G2933S-130
BLS6G2933S-130
transistor d 1302
smd transistor 927
smd transistor equivalent table
Duroid 6006
sot922
radar circuit component
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Untitled
Abstract: No abstract text available
Text: BLF8G20LS-400PV; BLF8G20LS-400PGV Power LDMOS transistor Rev. 1 — 6 June 2013 Preliminary data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1805 MHz to 1995 MHz.
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BLF8G20LS-400PV;
BLF8G20LS-400PGV
BLF8G20LS-400PV
LS-400PGV
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Untitled
Abstract: No abstract text available
Text: BLF8G20LS-400PV; BLF8G20LS-400PGV Power LDMOS transistor Rev. 1 — 25 June 2013 Product data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1805 MHz to 1995 MHz.
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BLF8G20LS-400PV;
BLF8G20LS-400PGV
BLF8G20LS-400PV
LS-400PGV
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Untitled
Abstract: No abstract text available
Text: CHIP PHOTO-TRANSISTOR CmSENSOR mum ’\ .* y 7 M 7 x ^ :ÿyyx$-c±miBi • Features 1. Developed as a chip type SMD phot-transistor for both reverse and top surface mounting 2. Small and square size, dim ensions : 3 ,2 L x 1.6(W)X1,1 (H)mm 2. ^- -Î;ïl3;3.e(L)xl.6(W)xl.i(H)
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CPT-S30'
950nmlRftLcfc
CL-200IR
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Untitled
Abstract: No abstract text available
Text: CHIP PHOTO-TRANSISTOR CmSENSOR mum • Features 1. Developed as a chip type SMD photo-transistor for both right-angle and upright uses 2. Small and square size, dimensions : 3.2 L x 2.4(W)x2.4(H)mm 3. Automatic mounting by chip mounter avail able 4. Reflow soldering available
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CPT-181
950nmlR3tCttSSSHSH
CL-200IRt
CL-200IR
L-2001R
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Untitled
Abstract: No abstract text available
Text: N AMER P H ILIP S /D IS C R E T E b'lE T> • bbSB'iai D0Sfl7ST B7T » A P X rm n p o rro u u m s p w m w u u n BLT81 UHF pow er transistor FEATURES • SMD encapsulation • Gold metallization ensures
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BLT81
OT223
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Untitled
Abstract: No abstract text available
Text: uim 1. ^ymy^^y'Jxs>-c±mR uTmmm^m0 • Features 1. Developed as a chip thpe SMD phot-transistor for both reverse and top surface mounting. 2. ^ffi\ -^IS3.8(L xl.6(W)xl.l(H) 2. Small and square size, dimensions : 3 .2 (L)x 1.6(W)X1.1 (H)mm. m < D / im - n m v '( X o
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T-230
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Untitled
Abstract: No abstract text available
Text: • bL53T31 0025b57 8^13 « A P X N AMER PHILIPS/D ISCR ETE b?E ]> BST86 J V N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in SOT89 envelope and designed fo r use as Surface Mounted Device SMD in th in and th ick-film circuits fo r application w ith relay, high-speed
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bL53T31
0025b57
BST86
0D35bbD
BST86
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CL-200IR
Abstract: CPT181S CPT-181S
Text: CHIP PHOTO-TRANSISTOR CmSENSOR • ft» ■ Features 2. ^ Jfi^ jilS 3 .2 L x p .4 (W )x 2 .4 (H ) 1. Developed as a chip type SMD photo-tran sistor for both right-angle and upright uses. 2. Small and square size, dimensions : 3.2(L)x 2.4(W)x2.4(H)mm. 3. Automatic mounting by chip mounter avail
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CPT-181
CL-200IR
Ta-25C)
CL-200IR
CPT181S
CPT-181S
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Untitled
Abstract: No abstract text available
Text: • Features ■ f t * CHIP PHOTO-TRANSISTOR 1. Developed as a chip type SMD photo-tran S. sistor for both right-angie and upright uses z m m & im m o tt3.2 L xe.4(W) xg.4(H) CmSENSOR 2. Small and square size, dim ensions : 3.2 (L )x 2.4(W )x2.4(H)m m m tm - n r n v - ^ iX c
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CL-200IR
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Untitled
Abstract: No abstract text available
Text: mm/ Features 1. î M M t t Q M D i m m M & r J W X 37ï?o tä^cDämmm 2. ^ y y v o y ^ - i ^ ^ y i j y 3. J 7 D - [ i ^ m hs 1. Developed as a chip-type SMD Photo-transistor 2. Automatic mounting by chip mounter available 3. Reflow soldering available o
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BST86
Abstract: TRANSISTOR SMD 2X y TRANSISTOR SMD 2X K smd transistor marking TL transistor smd marking JT smd transistor marking u d
Text: • bL53T31 D0SSb57 fl43 * A P X N AflER PHILIPS/DISCRETE BST86 b?E ]> N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancem ent m ode ve rtica l D-MOS tran sisto r in SO T89 envelope and designed fo r use as Surface M ounted Device SMD in th in and th ic k -film circ u its fo r a p p lica tio n w ith relay, high-speed
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bL53T31
D0SSb57
BST86
0D25bba
BST86
TRANSISTOR SMD 2X y
TRANSISTOR SMD 2X K
smd transistor marking TL
transistor smd marking JT
smd transistor marking u d
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report on colpitts oscillator
Abstract: TRANSISTOR SMD L82 smd transistor N33 B69812-N1897-A320 Colpitts Wideband VCO Circuit Schematic and PCB Layout 3ip2 Frequency Filters downconvertor 1890MHZ BFG505
Text: Philips Semiconductors 1890 MHz low power downconverter with 110 MHz I.F. . . . . . ^ ,Ca IOn ref3° 1890 M Hz LO W PO W E R DOW NCONVERTER W IT H 110 M Hz I.F . Introduction This application note describes the performance of a 1890 MHz low voltage 3 volt
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B69812-N1897-A320)
BC807
BFG505X
BFG505
BB131
report on colpitts oscillator
TRANSISTOR SMD L82
smd transistor N33
B69812-N1897-A320
Colpitts Wideband VCO Circuit Schematic and PCB Layout
3ip2
Frequency Filters
downconvertor
1890MHZ
BFG505
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