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    SNG40660A Search Results

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    Untitled

    Abstract: No abstract text available
    Text: IGBT IGBT: INS. GATE BIPOLAR TRANSISTOR PACKAGE TO-257 % TO-254 0 j/c * °c/w 570 750 2.0 3.1 310 750 2.0 31 2.0 800 1500 1.25 24 2.9 100 1500 1.25 bvces SNG30620 600 20 2.6 SNG30620A 600 20 600 SNG20640 VOLTS ^ies * pf DEVICE TYPE fC cont AMPS VCE (sat)


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    PDF O-257 O-254 SNG30620 SNG30620A SNG20640 SNG20648A SNG40635 SNG40648A SNG40660A SNG40675

    IXGD30N60

    Abstract: IXGD10N60
    Text: PACKAGE TO-257 TO-254 TO-258 'c »I VOLTS AMPS VCE <sat VOLTS n sec PO WATTS CHIP 10 2.5 300 50 IXGD10N60 SNG30610A 600 600 10 3.0 300 50 IXGD10N60A SMG301010 1000 10 3.5 800 50 1XGD10N100 SNG301010A 1000 10 4.0 500 50 IXGD10N100A DEVICE TYPE b v ces •c


    OCR Scan
    PDF O-257 SNG3Q610 SNG30610A SMG301010 SNG301010A IXGD10N60 IXGD10N60A 1XGD10N100 IXGD10N100A O-254 IXGD30N60

    SNG41270A

    Abstract: No abstract text available
    Text: A POW ERHOUSE IGBT IG B T : INS. G A T E B I P O L A R T R A N S I S T O R > o TO-254 CO 1-J TO-257 DEVICE TYPE C O LU O > m PACKAGE *C cont AMPS VCE (sat) VOLTS * f (1 ) Ci c- nsec’ Pf ~ c w SNG30620 600 20 2.6 570 75C 2.0 SNG30620A 600 20 3.1 310 750


    OCR Scan
    PDF SNG30620 SNG30620A O-257 O-254 SNG20640 O-258 SNG20648A SNG21034 SNG40635 SNG40640 SNG41270A