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    PERCI USO-324-TL-A-31

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    Component Electronics, Inc USO-324-TL-A-31 85
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    PERCI CONTAC USO324TLA30

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    Component Electronics, Inc USO324TLA30 70
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    PERCI USO-324-TL-A-30

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    Component Electronics, Inc USO-324-TL-A-30 16
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    Techni-Pro 706SO324

    Techni-Pro 706SO324 Inspection Arrows, Paper, 1/8"x3/16", 3" Core, 6.4 mil, Blue, 5000/Roll
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    TestEquity LLC 706SO324
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    SO324 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Center Power & Ground Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V124SA Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Equal access and cycle times


    Original
    IDT71V124SA 10/12/15ns 12/15ns 32-pin 400-mil IDT71V124 576-bit PDF

    IDT71V124

    Abstract: IDT71V124SA 71V124SA
    Text: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Center Power & Ground Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V124SA Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Equal access and cycle times


    Original
    IDT71V124SA 10/12/15/20ns 32-pin 400-mil IDT71V124 576-bit IDT71V124SA 71V124SA PDF

    IDT71124

    Abstract: No abstract text available
    Text: CMOS STATIC RAM 1 MEG 128K x 8-BIT REVOLUTIONARY PINOUT PRELIMINARY IDT71124 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JEDEC revolutionary pinout (center power/GND) for reduced noise. • Equal access and cycle times


    Original
    IDT71124 12/15/20ns 32-pin IDT71124 576-bit 200mV 400-mil SO32-3) PDF

    SO32-2

    Abstract: IDT71V124 IDT71V124SA SO32
    Text: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Center Power & Ground Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V124SA/HSA Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Equal access and cycle times


    Original
    IDT71V124SA/HSA 10/12/15/20ns 32-pin 400-mil IDT71V124 576-bit SO32-2 IDT71V124SA SO32 PDF

    71v124

    Abstract: IDT71V124 IDT71V124SA
    Text: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Center Power & Ground Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V124SA Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Equal access and cycle times


    Original
    IDT71V124SA 10/12/15/20ns 12/15/20ns 32-pin 400-mil IDT71V124 576-bit x4033 71v124 IDT71V124SA PDF

    SO32-3

    Abstract: SO-323 IDT71V124 IDT71V124SA SO32
    Text: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Center Power & Ground Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V124SA Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Equal access and cycle times


    Original
    IDT71V124SA 10/12/15ns 12/15ns 32-pin 400-mil IDT71V124 576-bit SO32-3 SO-323 IDT71V124SA SO32 PDF

    Untitled

    Abstract: No abstract text available
    Text: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Center Power & Ground Pinout IDT71V124SA Features Description ◆ The IDT71V124 is a 1,048,576-bit high-speed static RAM organized as 128K x 8. It is fabricated using high-performance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative


    Original
    IDT71V124SA IDT71V124 576-bit PDF

    SO32-3

    Abstract: IDT71V124 IDT71V124SA SO32-2
    Text: 3.3V CMOS STATIC RAM 1 MEG 128K x 8 CENTER POWER & GROUND PINOUT IDT71V124SA Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JEDEC revolutionary pinout (center power/GND) for reduced noise • Equal access and cycle times


    Original
    IDT71V124SA 10/12/15/20ns 32-pin 400-mil 32pin IDT71V124 576-bit 200mV 71V124 SO32-3 IDT71V124SA SO32-2 PDF

    IDT71V124

    Abstract: IDT71V124SA
    Text: 3.3V CMOS STATIC RAM 1 MEG 128K x 8 CENTER POWER & GROUND PINOUT PRELIMINARY IDT71V124SA Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JEDEC revolutionary pinout (center power/GND) for reduced noise


    Original
    IDT71V124SA 10/12/15/20ns 32-pin 400-mil 32pin IDT71V124 576-bit 200mV 71V124 IDT71V124SA PDF

    K6X0808C1D-BF55

    Abstract: HY6264P AS6C1008-55SIN samsung p28 K6R4016V1D-UC10 as6c4008-55sin HYNIX IS61LV25616AL-10KLI GS71116AGP-10 uPD431000ACZ-70L
    Text: cross_reference Density Organization Alliance Alliance Part Number Alliance Package Alliance Speed Samsung Samsung Part Number Cypress Cypress Part Number Cypress Package Cypress Package Code Cypress Speed IDT Part Number IDT Package IDT Package Code IDT Speed ISSI


    Original
    CY7C128A-15VC CY7C128A-15SC CY7C167A-15PC CY7C168A-15PC 24PIN 20PIN 300MIL K6X0808C1D-BF55 HY6264P AS6C1008-55SIN samsung p28 K6R4016V1D-UC10 as6c4008-55sin HYNIX IS61LV25616AL-10KLI GS71116AGP-10 uPD431000ACZ-70L PDF

    71V124

    Abstract: IDT71V124
    Text: 3.3V CMOS STATIC RAM 1 MEG 128K x 8-BIT REVOLUTIONARY PINOUT PRELIMINARY IDT71V124 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JEDEC revolutionary pinout (center power/GND) for reduced noise.


    Original
    IDT71V124 12/15/20ns Plastic32-pin 32-pin IDT71V124 576-bit 200mV 71V124 400-mil 71V124 PDF

    Untitled

    Abstract: No abstract text available
    Text: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Center Power & Ground Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V124SA Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Equal access and cycle times


    Original
    IDT71V124SA 10/12/15/20ns 32-pin 400-mil IDT71V124 576-bit PDF

    IDT71V124

    Abstract: IDT71V124SA
    Text: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Center Power & Ground Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V124SA/HSA Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Equal access and cycle times


    Original
    IDT71V124SA/HSA 10/12/15/20ns 32-pin 400-mil IDT71V124 576-bit IDT71V124SA PDF

    Untitled

    Abstract: No abstract text available
    Text: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Center Power & Ground Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V124SA Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Equal access and cycle times


    Original
    IDT71V124SA 10/12/15ns 12/15ns 32-pin 400-mil IDT71V124 576-bit PDF

    K3750

    Abstract: DB9 serial Connector pcb layout SMT6T jack p4 2.1mm C57B samsung u3 schematics processor ps2 female Connector pcb layout RS-232 DB9(F) connector footprint DB9 drawing SO32-4
    Text: AT91EB40A Evaluation Board . User Guide Table of Contents Section 1 Overview. 1-1


    Original
    AT91EB40A 2635B K3750 DB9 serial Connector pcb layout SMT6T jack p4 2.1mm C57B samsung u3 schematics processor ps2 female Connector pcb layout RS-232 DB9(F) connector footprint DB9 drawing SO32-4 PDF

    AT91EB40A

    Abstract: C57B SMT6T 74LV04AD AT49BV1604 AT49BV1614 74LV74 AT91R40008 EB40A ps2 female Connector pcb layout
    Text: AT91EB40A Evaluation Board . User Guide Table of Contents Section 1 Overview. 1-1


    Original
    AT91EB40A C57B SMT6T 74LV04AD AT49BV1604 AT49BV1614 74LV74 AT91R40008 EB40A ps2 female Connector pcb layout PDF

    IDT71V124

    Abstract: IDT71V124SA
    Text: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Center Power & Ground Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V124SA Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Equal access and cycle times


    Original
    IDT71V124SA 10/12/15/20ns 32-pin 400-mil IDT71V124 576-bit IDT71V124SA PDF

    philips diode PH 33J

    Abstract: UM61256FK-15 sem 2106 inverter diagram IDT7024L70GB um61256 UM61256ak sram um61256fk15 HIGH VOLTAGE ISOLATION DZ 2101 C5584 IDT74LVC1G07ADY
    Text: QUICKSWITCH PRODUCTS HIGH-SPEED LOW POWER CMOS 10-BIT BUS SWITCHES QS3L384 QS3L2384 FEATURES/BENEFITS DESCRIPTION • • • • • • • • • The QS3L384 and QS3L2384 provide a set of ten high-speed CMOS TTL-compatible bus switches. The low ON resistance of the QS3L384 allows inputs to be connected to outputs without


    Original
    10-BIT QS3L384) QS3L2384 QS3L384 QS3L2384 philips diode PH 33J UM61256FK-15 sem 2106 inverter diagram IDT7024L70GB um61256 UM61256ak sram um61256fk15 HIGH VOLTAGE ISOLATION DZ 2101 C5584 IDT74LVC1G07ADY PDF

    AT91EB40A Evaluation Board User Guide

    Abstract: at49bv162a jtag cable schematic K375 AT91EB40A AT49BV1604 AT49BV1614 AT91R40008 EB40A samsung u3 schematics processor box header 2x10 right angle
    Text: AT91EB40A Evaluation Board . User Guide Table of Contents Section 1 Overview. 1-1


    Original
    AT91EB40A 2635C 13-May-05 AT91EB40A Evaluation Board User Guide at49bv162a jtag cable schematic K375 AT49BV1604 AT49BV1614 AT91R40008 EB40A samsung u3 schematics processor box header 2x10 right angle PDF

    HX8677

    Abstract: HX8678 SO402 Himax HX8660 UD 1208
    Text: DOC No. HX8264-D02-DS HX8264-D02 1200 CH TFT LCD Source Driver with TCON Version 02 November, 2010 HX8264-D02 1200CH TFT LCD Source Driver with TCON List of Contents November, 2010 1. General Description . 5


    Original
    HX8264-D02-DS HX8264-D02 1200CH 83November, HX8264-D02DPDxxx 84November, HX8677 HX8678 SO402 Himax HX8660 UD 1208 PDF

    SO32

    Abstract: IDT71V124 IDT71V124SA
    Text: 3.3V CMOS STATIC RAM 1 MEG 128K x 8 CENTER POWER & GROUND PINOUT PRELIMINARY IDT71V124SA Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JEDEC revolutionary pinout (center power/GND) for reduced noise


    Original
    IDT71V124SA 9/10/12/15/20ns 32-pin 400-mil 32pin IDT71V124 576-bit 200mV 71V124 300-mil SO32 IDT71V124SA PDF

    IDT71V124

    Abstract: IDT71V124SA SO32-3
    Text: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Center Power & Ground Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V124SA Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Equal access and cycle times


    Original
    IDT71V124SA 10/12/15/20ns 12/15/20ns 32-pin 400-mil IDT71V124 576-bit IDT71V124SA, x4033 IDT71V124SA SO32-3 PDF

    6116 CMOS RAM

    Abstract: No abstract text available
    Text: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Center Power & Ground Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V124SA Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Equal access and cycle times


    Original
    IDT71V124SA 10/12/15/20ns 32-pin 400-mil IDT71V124 576-bit x4033 6116 CMOS RAM PDF

    71v124

    Abstract: IDT71V124 IDT71V124SA
    Text: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Center Power & Ground Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V124SA Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Equal access and cycle times


    Original
    IDT71V124SA 10/12/15/20ns 12/15/20ns 32-pin 400-mil IDT71V124 576-bit x4033 71v124 IDT71V124SA PDF