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    Toshiba America Electronic Components TC7SO8FT5LFT

    AND Gate 1-Element 2-IN CMOS 5-Pin SMV T/R ; ECCN: EAR99
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    ComSIT USA TC7SO8FT5LFT 6,000
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    Vishay Intertechnologies VS16TTSO8FPPBF

    16 A HIGH VOLTAGE PHASE CONTROL THYRISTOR Silicon Controlled Rectifier, 10A I(T), 800V V(DRM) ; ECCN: EAR99
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    ComSIT USA VS16TTSO8FPPBF 1,000
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    SO8F Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: NTMFD4C88N Advance Information PowerPhase, Dual N-Channel SO8FL 30 V, High Side 20 A / Low Side 24 A http://onsemi.com Features • • • • Co−Packaged Power Stage Solution to Minimize Board Space Minimized Parasitic Inductances Optimized Devices to Reduce Power Losses


    Original     		NTMFD4C88N NTMFD4C88N/D PDF

    Untitled

    Abstract: No abstract text available
    Text: NTMFD4901NF Dual N-Channel Power MOSFET with Integrated Schottky 30 V, High Side 18 A / Low Side 30 A, Dual N−Channel SO8FL http://onsemi.com V BR DSS RDS(ON) MAX Q1 Top FET 30 V 6.5 mW @ 10 V Features • • • • • Co−Packaged Power Stage Solution to Minimize Board Space


    Original     		NTMFD4901NF NTMFD4901NF/D PDF

    Untitled

    Abstract: No abstract text available
    Text: NTMFD4C87N Advance Information PowerPhase, Dual N-Channel SO8FL 30 V, High Side 20 A / Low Side 26 A http://onsemi.com Features • • • • Co−Packaged Power Stage Solution to Minimize Board Space Minimized Parasitic Inductances Optimized Devices to Reduce Power Losses


    Original     		NTMFD4C87N NTMFD4C87N/D PDF

    4902N

    Abstract: No abstract text available
    Text: NTMFD4902NF Dual N-Channel Power MOSFET with Integrated Schottky 30 V, High Side 18 A / Low Side 23 A, Dual N−Channel SO8FL http://onsemi.com V BR DSS RDS(ON) MAX Features • • • • • Co−Packaged Power Stage Solution to Minimize Board Space Low Side MOSFET with Integrated Schottky


    Original     		NTMFD4902NF NTMFD4902NF/D 4902N PDF

    Untitled

    Abstract: No abstract text available
    Text: NTMFD4901NF Dual N-Channel Power MOSFET with Integrated Schottky 30 V, High Side 18 A / Low Side 30 A, Dual N−Channel SO8FL http://onsemi.com V BR DSS RDS(ON) MAX Features • • • • • Co−Packaged Power Stage Solution to Minimize Board Space Low Side MOSFET with Integrated Schottky


    Original     		NTMFD4901NF NTMFD4901NF/D PDF

    4902N

    Abstract: No abstract text available
    Text: NTMFD4902NF Dual N-Channel Power MOSFET with Integrated Schottky 30 V, High Side 18 A / Low Side 23 A, Dual N−Channel SO8FL V BR DSS Features • • • • • http://onsemi.com Co−Packaged Power Stage Solution to Minimize Board Space Low Side MOSFET with Integrated Schottky


    Original     		NTMFD4902NF NTMFD4902NF/D 4902N PDF

    Untitled

    Abstract: No abstract text available
    Text: NTMFD4C20N Dual N-Channel Power MOSFET 30 V, High Side 18 A / Low Side 27 A, Dual N−Channel SO8FL http://onsemi.com Features • • • • Co−Packaged Power Stage Solution to Minimize Board Space Minimized Parasitic Inductances Optimized Devices to Reduce Power Losses


    Original     		NTMFD4C20N NTMFD4C20N/D PDF

    Untitled

    Abstract: No abstract text available
    Text: NTMFD4902NF Dual N-Channel Power MOSFET with Integrated Schottky 30 V, High Side 18 A / Low Side 23 A, Dual N−Channel SO8FL http://onsemi.com V BR DSS RDS(ON) MAX Features • • • • • Co−Packaged Power Stage Solution to Minimize Board Space Low Side MOSFET with Integrated Schottky


    Original     		NTMFD4902NF NTMFD4902NF/D PDF

    Q1/HLA-80

    Abstract: No abstract text available
    Text: NTMFD4C85N Advance Information PowerPhase, Dual N-Channel SO8FL 30 V, High Side 25 A / Low Side 49 A http://onsemi.com Features • • • • Co−Packaged Power Stage Solution to Minimize Board Space Minimized Parasitic Inductances Optimized Devices to Reduce Power Losses


    Original     		NTMFD4C85N NTMFD4C85N/D Q1/HLA-80 PDF

    Untitled

    Abstract: No abstract text available
    Text: NTMFD4C86N Advance Information PowerPhase, Dual N-Channel SO8FL 30 V, High Side 20 A / Low Side 32 A http://onsemi.com Features • • • • Co−Packaged Power Stage Solution to Minimize Board Space Minimized Parasitic Inductances Optimized Devices to Reduce Power Losses


    Original     		NTMFD4C86N NTMFD4C86N/D PDF

    Untitled

    Abstract: No abstract text available
    Text: NVMFS4841N Power MOSFET 30V, 7 mW, 89A, Single N−Channel SO8FL Features • • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS4841NWF − Wettable Flanks Product


    Original     		NVMFS4841N NVMFS4841NWF AEC-Q101 NVMFS4841N/D PDF

    Untitled

    Abstract: No abstract text available
    Text: NVMFD5877NL Power MOSFET 60 V, 39 mW, 17 A, Dual N−Channel, Logic Level, Dual SO8FL Features • • • • • • • Small Footprint 5x6 mm for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses 175°C Operating Temperature


    Original     		NVMFD5877NL AEC-Q101 NVMFD5877NL/D PDF

    4901n

    Abstract: 4901NF 5-06B NTMFD4901NFT1G
    Text: NTMFD4901NF Dual N-Channel Power MOSFET with Integrated Schottky 30 V, High Side 18 A / Low Side 30 A, Dual N−Channel SO8FL V BR DSS Features • • • • • http://onsemi.com Co−Packaged Power Stage Solution to Minimize Board Space Low Side MOSFET with Integrated Schottky


    Original     		NTMFD4901NF NTMFD4901NF/D 4901n 4901NF 5-06B NTMFD4901NFT1G PDF

    4902NF

    Abstract: No abstract text available
    Text: NTMFD4902NF Dual N-Channel Power MOSFET with Integrated Schottky 30 V, High Side 18 A / Low Side 23 A, Dual N−Channel SO8FL V BR DSS Features • • • • • http://onsemi.com Co−Packaged Power Stage Solution to Minimize Board Space Low Side MOSFET with Integrated Schottky


    Original     		NTMFD4902NF NTMFD4902NF/D 4902NF PDF

    Untitled

    Abstract: No abstract text available
    Text: NTMFD4901NF Dual N-Channel Power MOSFET with Integrated Schottky 30 V, High Side 18 A / Low Side 30 A, Dual N−Channel SO8FL http://onsemi.com V BR DSS RDS(ON) MAX Q1 Top FET 30 V 6.5 mW @ 10 V Features • • • • • Co−Packaged Power Stage Solution to Minimize Board Space


    Original     		NTMFD4901NF NTMFD4901NF/D PDF

    Untitled

    Abstract: No abstract text available
    Text: NVMFD5877NL, NVMFD5877NLWF Power MOSFET 60 V, 39 mW, 17 A, Dual N−Channel, Logic Level, Dual SO8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVMFD5877NLWF − Wettable Flanks Product


    Original     		NVMFD5877NL, NVMFD5877NLWF AEC-Q101 NVMFD5877NL/D PDF

    Untitled

    Abstract: No abstract text available
    Text: NVMFD5877NL Power MOSFET 60 V, 39 mW, 17 A, Dual N−Channel, Logic Level, Dual SO8FL Features • • • • • • • Small Footprint 5x6 mm for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses 175°C Operating Temperature


    Original     		NVMFD5877NL AEC-Q101 NVMFD5877NL/D PDF

    NVMFD5877NLT1G

    Abstract: 5877NL
    Text: NVMFD5877NL Power MOSFET 60 V, 39 mW, 17 A, Dual N−Channel, Logic Level, Dual SO8FL Features • • • • • • Small Footprint 5x6 mm for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses 175°C Operating Temperature


    Original     		NVMFD5877NL AEC-Q101 NVMFD5877NL/D NVMFD5877NLT1G 5877NL PDF

    5877NL

    Abstract: NVMFD5877NLT1G
    Text: NVMFD5877NL Power MOSFET 60 V, 39 mW, 17 A, Dual N−Channel, Logic Level, Dual SO8FL Features • • • • • • Small Footprint 5x6 mm for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses 175°C Operating Temperature


    Original     		NVMFD5877NL AEC-Q101 NVMFD5877NL/D 5877NL NVMFD5877NLT1G PDF

    v4841

    Abstract: NVMFS4841NT1G JESD51-12
    Text: NVMFS4841N Power MOSFET 30V, 7 mW, 89A, Single N−Channel SO8FL Features • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC−Q101 Qualified These are Pb−Free Devices*


    Original     		NVMFS4841N AEC-Q101 NVMFS4841N/D v4841 NVMFS4841NT1G JESD51-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: NTMFD4902NF Dual N-Channel Power MOSFET with Integrated Schottky 30 V, High Side 18 A / Low Side 23 A, Dual N−Channel SO8FL V BR DSS Features • • • • • http://onsemi.com Co−Packaged Power Stage Solution to Minimize Board Space Low Side MOSFET with Integrated Schottky


    Original     		NTMFD4902NF NTMFD4902NF/D PDF

    Untitled

    Abstract: No abstract text available
    Text: NVMFD5877NL Power MOSFET 60 V, 39 mW, 17 A, Dual N−Channel, Logic Level, Dual SO8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVMFD5877NLWF − Wettable Flanks Product AEC−Q101 Qualified and PPAP Capable


    Original     		NVMFD5877NL NVMFD5877NLWF NVMFD5877NL/D PDF

    NVMFD5877NL

    Abstract: No abstract text available
    Text: NVMFD5877NL Power MOSFET 60 V, 39 mW, 17 A, Dual N−Channel, Logic Level, Dual SO8FL Features • • • • • • • Small Footprint 5x6 mm for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses 175°C Operating Temperature


    Original     		NVMFD5877NL AEC-Q101 NVMFD5877NL/D NVMFD5877NL PDF

    NVMFD5877NL

    Abstract: No abstract text available
    Text: NVMFD5877NL Power MOSFET 60 V, 39 mW, 17 A, Dual N−Channel, Logic Level, Dual SO8FL Features • • • • • • • Small Footprint 5x6 mm for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses 175°C Operating Temperature


    Original     		NVMFD5877NL AEC-Q101 NVMFD5877NL/D PDF