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    SOIC-8 MOSFET Search Results

    SOIC-8 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    SOIC-8 MOSFET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: NTMS3P03R2 Power MOSFET -3.05 Amps, -30 Volts P-Channel SOIC-8 http://onsemi.com Features •ăHigh Efficiency Components in a Single SOIC-8 Package •ăHigh Density Power MOSFET with Low RDS on •ăMiniature SOIC-8 Surface Mount Package - Saves Board Space


    Original     		NTMS3P03R2 NTMS3P03R2/D PDF

    E3P03

    Abstract: NTMS3P03R2 NTMS3P03R2G
    Text: NTMS3P03R2 Power MOSFET -3.05 Amps, -30 Volts P-Channel SOIC-8 http://onsemi.com Features •ăHigh Efficiency Components in a Single SOIC-8 Package •ăHigh Density Power MOSFET with Low RDS on •ăMiniature SOIC-8 Surface Mount Package - Saves Board Space


    Original     		NTMS3P03R2 NTMS3P03R2/D E3P03 NTMS3P03R2 NTMS3P03R2G PDF

    ir2110

    Abstract: ir2110 application AN IR2110 IR2112 IR2112-2 IR2110-2 IR4427 IC IR2110S IR2186S IR3220S
    Text: International Rectifier Automotive IC Navigator MOSFET GATE DRIVERS 8 Lead SOIC Narrow Body 14 Lead SOIC Narrow Body 16 Lead SOIC Wide Body Features Voltage Offset 8 Lead DIP Dual Low Side b a si c n/a IR4426 IR4427 IR4428 IR4426S IR4427S IR4428S High Side


    Original     		IR4426 IR4427 IR4428 IR4426S IR4427S IR4428S IR21271 IR21271S IR2181 IR2186 ir2110 ir2110 application AN IR2110 IR2112 IR2112-2 IR2110-2 IR4427 IC IR2110S IR2186S IR3220S PDF

    4701N

    Abstract: NTMFS4701N NTMFS4701NT1G NTMFS4701NT3G
    Text: NTMFS4701N Power MOSFET 30 V, 20 A, Single N-Channel, SOIC-8 Flat Lead Package Features •ăThermally and Electrically Enhanced Packaging Compatible with Standard SOIC-8 http://onsemi.com •ăNew Package Provides Capability of Inspection and Probe After


    Original     		NTMFS4701N NTMFS4701N/D 4701N NTMFS4701N NTMFS4701NT1G NTMFS4701NT3G PDF

    Untitled

    Abstract: No abstract text available
    Text: NTMD4820N Power MOSFET 30 V, 8 A, Dual N-Channel, SOIC-8 Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăDual SOIC-8 Surface Mount Package Saves Board Space


    Original     		NTMD4820N NTMD4820N/D PDF

    PB CWDM305P

    Abstract: CWDM305P marking code 8 lead soic package CWDM305N
    Text: Product Brief CWDM305N Single, 5.8A N-Channel CWDM305P (Single, 5.3A P-Channel) CWDM305ND (Dual, 5.8A N-Channel) CWDM305PD (Dual, 5.3A P-Channel) SOIC-8 30V, MOSFETs in the SOIC-8 package Typical Electrical Characteristics Central Semiconductor’s CWDM305N, CWDM305P, CWDM305ND,


    Original     		CWDM305N CWDM305P CWDM305ND CWDM305PD CWDM305N, CWDM305P, CWDM305ND, CWDM305PD C305N C503P PB CWDM305P CWDM305P marking code 8 lead soic package CWDM305N PDF

    MOSFET SMD MARKING CODE

    Abstract: SOIC8 package CWDM305P
    Text: Product Brief CWDM305P 30V, 5.3A P-Channel MOSFET in the SOIC-8 package SOIC-8 Typical Electrical Characteristics Central Semiconductor’s CWDM305P is a high current P-channel enhancement-mode silicon MOSFET designed for high speed pulsed amplifier and driver applications. This


    Original     		CWDM305P CWDM305P com/info/CWDM305P MOSFET SMD MARKING CODE SOIC8 package PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Brief CWDM305P Single, 5.3A P-Channel CWDM305PD (Dual, 5.3A P-Channel) CWDM305ND (Dual, 5.8A N-Channel) SOIC-8 30V, MOSFETs in the SOIC-8 package Typical Electrical Characteristics Central Semiconductor’s CWDM305P (Single, 5.3A P-Channel), CWDM305PD (Dual, 5.3A P-Channel), and CWDM305ND (Dual,


    Original     		CWDM305P CWDM305PD CWDM305ND CWDM305ND CWDM305P CWDM305PD PDF

    4840N

    Abstract: NTMD4840NR2G NTMD4840 NTMD4840N
    Text: NTMD4840N Power MOSFET 30 V, 7.5 A, Dual N-Channel, SOIC-8 Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăDual SOIC-8 Surface Mount Package Saves Board Space


    Original     		NTMD4840N NTMD4840N/D 4840N NTMD4840NR2G NTMD4840 NTMD4840N PDF

    4707n

    Abstract: 4707n mosfet NTMFS4707NT3G NTMFS4707N NTMFS4707NT1G
    Text: NTMFS4707N Power MOSFET 30 V, 17 A, Single N-Channel, SOIC-8 Flat Lead Features •ăFast Switching Times •ăLow Gate Charge •ăLow RDS on •ăLow Inductance SOIC-8 Package •ăThese are Pb-Free Devices http://onsemi.com V(BR)DSS RDS(on) Typ 10 mW @ 10 V


    Original     		NTMFS4707N NTMFS4707N/D 4707n 4707n mosfet NTMFS4707NT3G NTMFS4707N NTMFS4707NT1G PDF

    4708N

    Abstract: NTMFS4708N NTMFS4708NT1G NTMFS4708NT3G
    Text: NTMFS4708N Power MOSFET 30 V, 19 A, Single N-Channel, SOIC-8 FL Features •ăFast Switching Times •ăLow Gate Charge •ăLow RDS on •ăLow Inductance SOIC-8 Package •ăThese are Pb-Free Devices http://onsemi.com V(BR)DSS RDS(on) Typ Applications •ăNotebooks, Graphics Cards


    Original     		NTMFS4708N NTMFS4708N/D 4708N NTMFS4708N NTMFS4708NT1G NTMFS4708NT3G PDF

    A8499

    Abstract: A8499SLJTR-T B340 circuit diagram regulator
    Text: A8499 High Voltage Step-Down Regulator Package LJ, 8-pin SOIC with exposed thermal pad The A8499 is a step down regulator that will handle a wide input operating voltage range. The A8499 is supplied in a low-profile 8-lead SOIC with exposed pad package LJ .


    Original     		A8499 A8499 A8499-DS A8499SLJTR-T B340 circuit diagram regulator PDF

    4800N

    Abstract: NTMS4800NR2G NTMS4800N
    Text: NTMS4800N Power MOSFET 30 V, 8 A, N−Channel, SOIC−8 Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses SOIC−8 Surface Mount Package Saves Board Space


    Original     		NTMS4800N NTMS4800N/D 4800N NTMS4800NR2G NTMS4800N PDF

    Untitled

    Abstract: No abstract text available
    Text: NTMS4800N Power MOSFET 30 V, 8 A, N−Channel, SOIC−8 Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses SOIC−8 Surface Mount Package Saves Board Space


    Original     		NTMS4800N NTMS4800N/D PDF

    NTMS4800NR2G

    Abstract: 4800N
    Text: NTMS4800N Power MOSFET 30 V, 8 A, N−Channel, SOIC−8 Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses SOIC−8 Surface Mount Package Saves Board Space


    Original     		NTMS4800N NTMS4800N/D NTMS4800NR2G 4800N PDF

    CPC2017N

    Abstract: EN50130-4 J-STD-033 K027
    Text: CPC2017N 8-Pin Dual SOIC OptoMOS Relay Parameter Blocking Voltage Load Current Max On-resistance LED Current to operate Rating 60 120 16 1 Description Units VP mA Ω mA Features • Designed for use in security systems complying with EN50130-4 • Small 8-Pin SOIC Package


    Original     		CPC2017N EN50130-4 1500Vrms CPC2017N DS-CPC2017N-R01 EN50130-4 J-STD-033 K027 PDF

    4820N

    Abstract: NTMD4820N NTMD4820NR2G
    Text: NTMD4820N Power MOSFET 30 V, 8 A, Dual N−Channel, SOIC−8 Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Dual SOIC−8 Surface Mount Package Saves Board Space


    Original     		NTMD4820N NTMD4820N/D 4820N NTMD4820N NTMD4820NR2G PDF

    4820N

    Abstract: NTMD4820N NTMD4820NR2G
    Text: NTMD4820N Power MOSFET 30 V, 8 A, Dual N−Channel, SOIC−8 Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Dual SOIC−8 Surface Mount Package Saves Board Space


    Original     		NTMD4820N NTMD4820N/D 4820N NTMD4820N NTMD4820NR2G PDF

    Untitled

    Abstract: No abstract text available
    Text: NTMD4820N Power MOSFET 30 V, 8 A, Dual N−Channel, SOIC−8 Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Dual SOIC−8 Surface Mount Package Saves Board Space


    Original     		NTMD4820N NTMD4820N/D PDF

    BRIDGE 2109

    Abstract: IR2108 IR21084 IR21084S IR2108S MS-012AA MS-012AB
    Text: Data Sheet No. PD60161-N IR2108 4 (S) HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • • • • Packages Fully operational to +600V 14-Lead SOIC Tolerant to negative transient voltage 8-Lead SOIC


    Original     		PD60161-N IR2108 14-Lead IR21084S IR2108S IR21084 IR2108 540ns MS-012AA. BRIDGE 2109 IR21084 IR21084S IR2108S MS-012AA MS-012AB PDF

    Untitled

    Abstract: No abstract text available
    Text: inc. HT0440 Preliminary High Voltage Isolated MOSFET Driver Ordering Information Package Options 8-Pin Narrow Body SOIC 8-Pin Plastic DIP HT0440LG HT0440N4 Features General Description □ ±400V input to output isolation □ ±700V isolation between outputs


    OCR Scan     		HT0440LG HT0440N4 HT0440 HT0440 600pF PDF

    IR21084

    Abstract: IR21084S IR2108 IR2108S MS-012AA MS-012AB mosfet te 2304
    Text: Data Sheet No. PD60161-P IR2108 4 (S) HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation Packages Fully operational to +600V 14-Lead SOIC Tolerant to negative transient voltage 8-Lead SOIC IR21084S IR2108S dV/dt immune • Gate drive supply range from 10 to 20V


    Original     		PD60161-P IR2108 14-Lead IR21084S IR2108S IR21084 IR2108 540ns MS-012AA) IR21084 IR21084S IR2108S MS-012AA MS-012AB mosfet te 2304 PDF

    IR2108

    Abstract: IR21084 IRFBC30 IRFPE50 IR21084S IR2108S IRFBC20 IRFBC40
    Text: Data Sheet No. PD60161-Q IR2108 4 (S) HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation Packages Fully operational to +600V 14-Lead SOIC Tolerant to negative transient voltage 8-Lead SOIC IR21084S IR2108S dV/dt immune • Gate drive supply range from 10 to 20V


    Original     		PD60161-Q IR2108 14-Lead IR21084S IR2108S IR21084 IR2108 540ns MS-012AA. IR21084 IRFBC30 IRFPE50 IR21084S IR2108S IRFBC20 IRFBC40 PDF

    IR2108

    Abstract: IR21084 mosfet te 2304 IR21084S IR2108S IRFBC20 IRFBC30 IRFBC40 IRFPE50 PD60161-R
    Text: Data Sheet No. PD60161-R IR2108 4 (S) & (PbF) HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation Fully operational to +600V Packages Tolerant to negative transient voltage dV/dt immune 14-Lead SOIC 8-Lead SOIC • Gate drive supply range from 10 to 20V


    Original     		PD60161-R IR2108 14-Lead IR21084S IR2108S IR21084 IR2108 540ns IR21084 mosfet te 2304 IR21084S IR2108S IRFBC20 IRFBC30 IRFBC40 IRFPE50 PD60161-R PDF