eh 11757
Abstract: 0.3mm pitch BGA JEDEC FBGA Coffin-Manson Equation thermal cycling data weibull 0.4mm pitch BGA BGA Solder Ball 0.35mm FBGA 63 PCB design for very fine pitch csp package bt resin
Text: Daisy Chain Samples Application Note -XO\ 7KH IROORZLQJ GRFXPHQW UHIHUV WR 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG
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WLCSP stencil design
Abstract: AN1112 Reliability of Area Array Solder Joints in Bending darveaux 8bump wlcsp altera board
Text: Flexural Testing of Board Mounted Wafer Level Packages for Handheld Devices V. Patwardhan, D. Chin, S. Wong, E. Rey, N. Kelkar and L. Nguyen National Semiconductor Corporation 2900 Semiconductor Drive, M/S 19-100 Santa Clara, CA 95052-8090 Email: [email protected]
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S71NS512r
Abstract: A22-A16 PSRAM S71NS512RD0 JEP95 S71NS-R S71NS256RD0 pSRAM_39
Text: S71NS-R Memory Subsystem Solutions MirrorBit 1.8 Volt-only Simultaneous Read/Write, Burst Mode Multiplexed Flash Memory and Burst Mode pSRAM 512 Mb 32 Mb x 16-bit / 256 Mb (16 Mb x 16-bit) Flash, 128 Mb (8 Mb x 16-bit) / 128Mb (4 Mb x 16-bit) pSRAM S71NS-R Memory Subsystem Solutions Cover Sheet
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S71NS-R
16-bit)
128Mb
S71NS512r
A22-A16
PSRAM
S71NS512RD0
JEP95
S71NS256RD0
pSRAM_39
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0.3mm pitch BGA
Abstract: tvr 1024 0.3mm pitch csp package LP62E16512-I
Text: LP62E16512-I Series 512K X 16 BIT LOW VOLTAGE CMOS SRAM Document Title 512K X 16 BIT LOW VOLTAGE CMOS SRAM Revision History History Issue Date Remark 0.0 Initial issue April 26, 2002 Preliminary 1.0 Final version release August 25, 2003 Final 1.1 Add Pb-Free package type
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LP62E16512-I
MO192
0.3mm pitch BGA
tvr 1024
0.3mm pitch csp package
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HB Electronic Components
Abstract: LP62E16512-T
Text: LP62E16512-T Series Preliminary 512K X 16 BIT LOW VOLTAGE CMOS SRAM Document Title 512K X 16 BIT LOW VOLTAGE CMOS SRAM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue April 26, 2002 Preliminary April, 2002, Version 0.0 AMIC Technology, Inc.
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LP62E16512-T
MO192
HB Electronic Components
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LP62E16512-I
Abstract: No abstract text available
Text: LP62E16512-I Series Preliminary 512K X 16 BIT LOW VOLTAGE CMOS SRAM Document Title 512K X 16 BIT LOW VOLTAGE CMOS SRAM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue April 26, 2002 Preliminary April, 2002, Version 0.0 AMIC Technology, Inc.
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LP62E16512-I
MO192
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LP62E16512-T
Abstract: No abstract text available
Text: LP62E16512-T Series 512K X 16 BIT LOW VOLTAGE CMOS SRAM Document Title 512K X 16 BIT LOW VOLTAGE CMOS SRAM Revision History History Issue Date Remark 0.0 Initial issue April 26, 2002 Preliminary 1.0 Final version release July 17, 2003 Final 1.1 Add Pb-Free package type
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LP62E16512-T
MO192
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tvr 1024
Abstract: smd A7 hb LP62S16512 LP62S16512-T O15G
Text: LP62S16512-T Series Preliminary 512K X 16 BIT LOW VOLTAGE CMOS SRAM Document Title 512K X 16 BIT LOW VOLTAGE CMOS SRAM Revision History Rev. No. 0.2 PRELIMINARY History Issue Date Remark Add Product Family and 55ns specification March 20, 2002 Preliminary
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LP62S16512-T
MO192
tvr 1024
smd A7 hb
LP62S16512
O15G
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LP62S16256E-I
Abstract: No abstract text available
Text: LP62S16256E-I Series 256K X 16 BIT LOW VOLTAGE CMOS SRAM Document Title 256K X 16 BIT LOW VOLTAGE CMOS SRAM Revision History Rev. No. 2.0 History Issue Date Change VCCmax from 3.3V to 3.6V January 25, 2002 Remark Add product family and 55ns specification January, 2002, Version 2.0
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LP62S16256E-I
MO192
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Untitled
Abstract: No abstract text available
Text: LP62S16512-T Series 512K X 16 BIT LOW VOLTAGE CMOS SRAM Document Title 512K X 16 BIT LOW VOLTAGE CMOS SRAM Revision History History Issue Date Remark 0.2 Add Product Family and 55ns specification March 20, 2002 Preliminary 1.0 Change ICC2 from 15mA to 8mA
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LP62S16512-T
MO192
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LP62S16256GV
Abstract: No abstract text available
Text: LP62S16256G-T Series Preliminary 256K X 16 BIT LOW VOLTAGE CMOS SRAM Document Title 256K X 16 BIT LOW VOLTAGE CMOS SRAM Revision History Rev. No. 0.0 PRELIMINARY History Initial issue June, 2006, Version 0.0 Issue Date June 6, 2006 Remark Preliminary AMIC Technology, Corp.
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LP62S16256G-T
MO192
LP62S16256GV
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LP62S16128B-I
Abstract: LP62S16128BU-70LLI
Text: LP62S16128B-I Series 128K X 16 BIT LOW VOLTAGE CMOS SRAM Features n Operating voltage: 2.7V to 3.6V n Access times: 55/70 ns max. n Current: Very low power version: Operating: 55ns 40mA (max.) 70ns 35mA (max.) Standby: 10µA (max.) n n n n n Full static operation, no clock or refreshing required
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LP62S16128B-I
44-pin
48-ball
MO192
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LP62S16256GU-55LLIF
Abstract: LP62S16256GV-70LLIF
Text: LP62S16256G-I Series Preliminary 256K X 16 BIT LOW VOLTAGE CMOS SRAM Document Title 256K X 16 BIT LOW VOLTAGE CMOS SRAM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue June 2, 2006 Preliminary June, 2006, Version 0.0 AMIC Technology, Corp.
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LP62S16256G-I
MO192
LP62S16256GU-55LLIF
LP62S16256GV-70LLIF
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LP62S16256GV-70LLTF
Abstract: LP62S16256GV-55LLTF LP62S16256GU-55LLTF LP62S16256G-T
Text: LP62S16256G-T Series 256K X 16 BIT LOW VOLTAGE CMOS SRAM Document Title 256K X 16 BIT LOW VOLTAGE CMOS SRAM Revision History Rev. No. 0.0 0.1 1.0 History Initial issue Remark Preliminary Change temperature from 0°C-70°C to -10°C-70°C Issue Date June 6, 2006
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LP62S16256G-T
MO192
LP62S16256GV-70LLTF
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LP62S16256GU-55LLTF
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smd A7 hb
Abstract: MO-192 LP62S16256F-T Series smd transistor HB LP62S16256F-T
Text: LP62S16256F-T Series Preliminary 256K X 16 BIT LOW VOLTAGE CMOS SRAM Features n Operating voltage: 2.7V to 3.3V n Access times: 70 ns max. n Current: Very low power version: Operating: 40mA (max.) Standby: 10µA (max.) n n n n All inputs and outputs are directly TTL-compatible
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LP62S16256F-T
44-pin
48-ball
MO192
smd A7 hb
MO-192
LP62S16256F-T Series
smd transistor HB
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48LD
Abstract: LP62S16512 LP62S16512-T AMIC Technology
Text: LP62S16512-T Series 512K X 16 BIT LOW VOLTAGE CMOS SRAM Document Title 512K X 16 BIT LOW VOLTAGE CMOS SRAM Revision History History Issue Date Remark 0.2 Add Product Family and 55ns specification March 20, 2002 Preliminary 1.0 Change ICC2 from 15mA to 8mA
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LP62S16512-T
MO192
48LD
LP62S16512
AMIC Technology
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Untitled
Abstract: No abstract text available
Text: LP62S16128B-I Series 128K X 16 BIT LOW VOLTAGE CMOS SRAM Features n Operating voltage: 2.7V to 3.6V n Access times: 55/70 ns max. n Current: Very low power version: Operating: 55ns 40mA (max.) 70ns 35mA (max.) Standby: 10µA (max.) n n n n n Full static operation, no clock or refreshing required
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LP62S16128B-I
44-pin
48-ball
MO192
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Untitled
Abstract: No abstract text available
Text: LP62S16256G-T Series 256K X 16 BIT LOW VOLTAGE CMOS SRAM Document Title 256K X 16 BIT LOW VOLTAGE CMOS SRAM Revision History Rev. No. 0.0 0.1 1.0 History Initial issue Remark Preliminary Change temperature from 0°C-70°C to -10°C-70°C Issue Date June 6, 2006
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LP62S16256G-T
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LP62S16128-T
Abstract: 0.3mm pitch csp package LP62S16128T
Text: LP62S16128-T Series 128K X 16 BIT LOW VOLTAGE CMOS SRAM Features n Operating voltage: 2.7V to 3.3V n Access times: 70 ns max. n Current: Very low power version: Operating: 35mA (max.) Standby: 10µA (max.) n n n n n Full static operation, no clock or refreshing required
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LP62S16128-T
44-pin
48-ball
MO192
0.3mm pitch csp package
LP62S16128T
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LP62S16256E-T
Abstract: No abstract text available
Text: LP62S16256E-T Series 256K X 16 BIT LOW VOLTAGE CMOS SRAM Document Title 256K X 16 BIT LOW VOLTAGE CMOS SRAM Revision History Rev. No. 2.0 History Issue Date Change VCCmax from 3.3V to 3.6V January 25, 2002 Remark Add product family and 55ns specification January, 2002, Version 2.0
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LP62S16256E-T
MO192
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Untitled
Abstract: No abstract text available
Text: LP62S16512-I Series 512K X 16 BIT LOW VOLTAGE CMOS SRAM Document Title 512K X 16 BIT LOW VOLTAGE CMOS SRAM Revision History History Issue Date Remark 0.2 Add Product Family and 55ns specification March 20, 2002 Preliminary 1.0 Change ICC2 from 15mA to 8mA
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MO192
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smd transistor HB
Abstract: LP62S16128B-T
Text: LP62S16128B-T Series 128K X 16 BIT LOW VOLTAGE CMOS SRAM Features n Operating voltage: 2.7V to 3.6V n Access times: 55/70 ns max. n Current: Very low power version: Operating: 55ns 40mA (max.) 70ns 35mA (max.) Standby: 10µA (max.) n n n n n Full static operation, no clock or refreshing required
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LP62S16128B-T
44-pin
48-ball
MO192
smd transistor HB
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LP62S16512-55LLI
Abstract: 0.3mm pitch BGA 0.3mm pitch csp package LP62S16512U-70LLI LP62S16512 LP62S16512-I
Text: LP62S16512-I Series Preliminary 512K X 16 BIT LOW VOLTAGE CMOS SRAM Document Title 512K X 16 BIT LOW VOLTAGE CMOS SRAM Revision History Rev. No. 0.2 PRELIMINARY History Issue Date Remark Add Product Family and 55ns specification March 20, 2002 Preliminary
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LP62S16512-I
MO192
LP62S16512-55LLI
0.3mm pitch BGA
0.3mm pitch csp package
LP62S16512U-70LLI
LP62S16512
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TVR 471
Abstract: LP62P16128C-T
Text: LP62P16128C-T Series Preliminary 128K X 16 BIT LOW VOLTAGE CMOS SRAM Document Title 128K X 16 BIT LOW VOLTAGE CMOS SRAM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue March 11, 2002 Preliminary March, 2002, Version 0.0
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LP62P16128C-T
MO192
TVR 471
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