LQM18PN
Abstract: LQP03TG LQH2HPN100MJ LQH32PB1R0NNC LQH2HP 15H101 LQH44PN2R2M LQM18PN1R5 LQM21PN4R7 LQP coil
Text: !Note • Please read rating and !CAUTION for storage, operating, rating, soldering, mounting and handling in this catalog to prevent smoking and/or burning, etc. • This catalog has only typical specifications. Therefore, please approve our product specifications or transact the approval sheet for product specifications before ordering.
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O05E-24
LQM18PN
LQP03TG
LQH2HPN100MJ
LQH32PB1R0NNC
LQH2HP
15H101
LQH44PN2R2M
LQM18PN1R5
LQM21PN4R7
LQP coil
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Untitled
Abstract: No abstract text available
Text: !Note • Please read rating and !CAUTION for storage, operating, rating, soldering, mounting and handling in this catalog to prevent smoking and/or burning, etc. • This catalog has only typical specifications. Therefore, please approve our product specifications or transact the approval sheet for product specifications before ordering.
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O05E-25
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LQM18PN
Abstract: LQM21PN4R7 LQH55PN100MR LQH55PN LQW18CNR33j LQM2MPN LQM18PN1R5 LQW15CNR LQH5BPN1R5N LQH3NPN220
Text: !Note • Please read rating and !CAUTION for storage, operating, rating, soldering, mounting and handling in this catalog to prevent smoking and/or burning, etc. • This catalog has only typical specifications because there is no space for detailed specifications. Therefore, please review our product specifications or consult the approval sheet for product specifications before ordering.
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O05E-23
LQM18PN
LQM21PN4R7
LQH55PN100MR
LQH55PN
LQW18CNR33j
LQM2MPN
LQM18PN1R5
LQW15CNR
LQH5BPN1R5N
LQH3NPN220
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96N30
Abstract: No abstract text available
Text: Advanced Technical Information PolarTM High Speed IXGQ 96N30PCD1 VCES = = IC25 VCE sat ≤ tfi = IGBT With Anti-Parellel Diode For PDP Applications Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VGES Continuous ±20 V VGEM Transient
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96N30PCD1
IXGQ96N30PCD1
96N30
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Untitled
Abstract: No abstract text available
Text: IXYK120N120C3 IXYX120N120C3 1200V XPTTM IGBTs GenX3TM VCES = IC110 = VCE sat tfi(typ) = High-Speed IGBTs for 20-50 kHz Switching 1200V 120A 3.20V 96ns TO-264 (IXYK) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M
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IXYK120N120C3
IXYX120N120C3
IC110
O-264
120N120C3
9P-C91)
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Untitled
Abstract: No abstract text available
Text: Inductors Coils for Power Lines Data Sheet 1 LQW15CN_00 Series 0402/1005 (inch/mm) Wound Thickness General (No Shield) 0.6 mm max. Reflow RoHS OK c Packaging (0.1) 0.5±0.1 c Dimensions Code Packaging Minimum Quantity D ø180mm Paper Taping 10000 B Packing in Bulk
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LQW15CN
180mm
LQW15CN18NJ00p
100MHz
1400mA
3000MHz
LQW15CN33NJ00p
1300mA
1800MHz
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Untitled
Abstract: No abstract text available
Text: Inductors Coils for Power Lines Data Sheet 1 LQW15CN_00 Series 0402/1005 (inch/mm) Wound Thickness General (No Shield) 0.6 mm max. Reflow RoHS OK c Packaging (0.1) 0.5±0.1 c Dimensions Code Packaging Minimum Quantity D ø180mm Paper Taping 10000 B Packing in Bulk
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LQW15CN
180mm
LQW15CN18NJ00p
100MHz
1400mA
3000MHz
LQW15CN33NJ00p
1300mA
1800MHz
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Untitled
Abstract: No abstract text available
Text: Inductors Coils > Chip Inductor (Chip Coil) > Power Inductor (Wire Wound Type for Choke) Data Sheet 1 Chip Inductor (Chip Coil) Power Inductor (Wire Wound Type for Choke) LQW15C_00 Series (0402 Size) c Packaging (0.1) 0.5±0.1 c Dimensions Code Packaging
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LQW15C
180mm
LQW15CN18NJ00p
LQW15CN33NJ00p
LQW15CN48NJ00p
LQW15CN70NJ00p
LQW15CN96NJ00p
LQW15CNR13J00p
LQW15CNR16J00p
LQW15CNR20J00p
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LQW15CNR
Abstract: LQW15CN LQW15CNR13J00 96nH
Text: Inductors Coils > Chip Inductor (Chip Coil) > Power Inductor (Wire Wound Type for Choke) Data Sheet 1 Chip Inductor (Chip Coil) Power Inductor (Wire Wound Type for Choke) LQW15C Series (0402 Size) c Packaging (0.1) 0.5±0.1 c Dimensions Code Packaging Minimum Quantity
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LQW15C
180mm
LQW15CN18NJ00p
LQW15CN33NJ00p
LQW15CN48NJ00p
LQW15CN70NJ00p
LQW15CN96NJ00p
LQW15CNR13J00p
LQW15CNR16J00p
LQW15CNR20J00p
LQW15CNR
LQW15CN
LQW15CNR13J00
96nH
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Untitled
Abstract: No abstract text available
Text: Inductors Coils > Chip Inductor (Chip Coil) > Power Inductor (Wire Wound Type for Choke) Data Sheet Chip Inductor (Chip Coil) 1 Power Inductor (Wire Wound Type for Choke) LQW15C Series (0402 Size) • Packaging (0.1) 0.5±0.1 ■ Dimensions Code Packaging
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LQW15C
180mm
LQW15CN18NJ00p
LQW15CN33NJ00p
LQW15CN48NJ00p
LQW15CN70NJ00p
LQW15CN96NJ00p
LQW15CNR13J00p
LQW15CNR16J00p
LQW15CNR20J00p
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Untitled
Abstract: No abstract text available
Text: 19-2790; Rev 4; 9/10 155Mbps to 2.5Gbps Burst-Mode Laser Driver ♦ ♦ ♦ ♦ ♦ Multirate Operation from 155Mbps to 2.5Gbps Burst Enable/Disable Delay <2ns Burst On-Time of 576ns to Infinity Infinite Bias-Current Hold Time Between Bursts DC-Coupled Operation with Single +3.3V Power
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155Mbps
576ns
MAX3656ETG
MAX3656ETG+
MAX3656
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HFAN-02
Abstract: IEC825 MAX3656 MAX3656ETG 155-Mbps HFAN02
Text: 19-2790; Rev 4; 9/10 155Mbps to 2.5Gbps Burst-Mode Laser Driver ♦ ♦ ♦ ♦ ♦ Multirate Operation from 155Mbps to 2.5Gbps Burst Enable/Disable Delay <2ns Burst On-Time of 576ns to Infinity Infinite Bias-Current Hold Time Between Bursts DC-Coupled Operation with Single +3.3V Power
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155Mbps
576ns
MAX3656ETG
MAX3656ETG+
MAX3656
HFAN-02
IEC825
MAX3656
MAX3656ETG
155-Mbps
HFAN02
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Untitled
Abstract: No abstract text available
Text: 19-2790; Rev 3; 7/10 155Mbps to 2.5Gbps Burst-Mode Laser Driver ♦ ♦ ♦ ♦ ♦ Multirate Operation from 155Mbps to 2.5Gbps Burst Enable/Disable Delay <2ns Burst On-Time of 576ns to Infinity Infinite Bias-Current Hold Time Between Bursts DC-Coupled Operation with Single +3.3V Power
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155Mbps
MAX3656
MAX3656
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Untitled
Abstract: No abstract text available
Text: R E5ZE-8j-E Multi-point Temperature Controller Control Up to Eight Zones, Provides Serial Communications H Applications include plastic injection and extrusion machines, and continuous temperature control processes H Fuzzy control can be used to enhance PID control response
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/H75E11
H61E11
1-800-55-OMRON
GCTC13
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HY57V654010
Abstract: RA12 875mil
Text: HY57V654010 2 Banks x 8 M x 4 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V654010 is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V654010 is organized as 2banks of
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HY57V654010
HY57V654010
864-bit
608x4.
1SE15-10-SEP97.
RA12
875mil
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HY57V654020
Abstract: Hyundai Semiconductor dram 875mil
Text: HY57V654020 4 Banks x 4M x 4Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V654020 is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V654020 is organized as 4banks of
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HY57V654020
HY57V654020
864-bit
304x8.
1SE16-10-SEP97.
Hyundai Semiconductor dram
875mil
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hy57v651620tc-10
Abstract: HY57V651620
Text: HY57V651620 4 Banks x 1M x 16 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V651620 is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V651620 is organized as 4banks of
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HY57V651620
HY57V651620
864-bit
576x16.
1SE12-10-SEP97.
hy57v651620tc-10
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HY57V658020TC-10
Abstract: hy57v HY57V658020 HY57V658020TC-12
Text: HY57V658020 4 Banks x 2M x 8Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V658020 is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V658020 is organized as 4banks of
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HY57V658020
HY57V658020
864-bit
152x8.
1SE14-10-SEP97.
HY57V658020TC-10
hy57v
HY57V658020TC-12
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HY57V651610TC10
Abstract: No abstract text available
Text: HY57V651610 2 Banks x 2M x 16 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V651610 is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V651610 is organized as 2banks of
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HY57V651610
HY57V651610
864-bit
152x16.
1SE11-10-SEP97.
HY57V651610TC10
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HY57V658010
Abstract: HY57V658010TC-10 HY57V658010TC-12
Text: HY57V658010 2 Banks x 4 M x 8 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V658010 is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V658010 is organized as 2banks of
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HY57V658010
HY57V658010
864-bit
304x8.
1SE13-10-SEP97.
HY57V658010TC-10
HY57V658010TC-12
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Untitled
Abstract: No abstract text available
Text: HY57V651610A 2 Banks x 2M x 16 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V651610A is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V651610A is organized as 2banks of
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HY57V651610A
HY57V651610A
864-bit
152x16.
1SE36-11-MAR98.
400mil
54pin
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dram 4mx4
Abstract: HY57V654020A Hyundai Semiconductor dram HY57V654020ATC-10S
Text: HY57V654020A 4 Banks x 4M x 4Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V654020A is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V654020A is organized as 4banks of
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HY57V654020A
HY57V654020A
864-bit
304x8.
1SE31-11-MAR98.
400mil
54pin
dram 4mx4
Hyundai Semiconductor dram
HY57V654020ATC-10S
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Untitled
Abstract: No abstract text available
Text: "H Y U N D A I - • HY57V654010 2 Banks x 8 M x 4 Bit Synchronous DRAM DESCRIPTION The Hyundai H Y 57V654010 is a 6 7 ,1 0 8 ,864-bit C M O S Synchronous D RA M ideally suited for the main memory appli cations which require large memory density and high bandwidth. H Y 57V654010 is organized as 2banks of
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HY57V654010
57V654010
864-bit
608x4.
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Untitled
Abstract: No abstract text available
Text: »«YUWPA! > — - • HY57V658010 2 Banks x 4 M x 8 8 it Synchronous DRAM DESCRIPTION The Hyundai H Y57V 658010 is a 67,108, 864-bit C M O S Synchronous DRAM, ideally suited for the main memory appli cations which require large memory density and high bandwidth. H Y 57V 658010 is organized as 2banks of
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HY57V658010
864-bit
304x8.
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