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    cx20185

    Abstract: UHF FM Transceiver motorola 5118 motorola 5118 uhf CXA1446S Sony Semiconductor ILX511 CXA1691 CXA1733M CXA1619S SONY ICX
    Text: Sony Semiconductor 96.10 Sony Semiconductor Product List ’96 – 10 TABLE OF CONTENTS MEMORY CMOS/Bi-CMOS SRAM . 1 • LINEUP . 1


    Original     		LCX009AK/AKB LCX011AM LCX012BL LCX016AL LCX016AM LCX019AM PHD003 PHD010 PHD011 PHD016 cx20185 UHF FM Transceiver motorola 5118 motorola 5118 uhf CXA1446S Sony Semiconductor ILX511 CXA1691 CXA1733M CXA1619S SONY ICX PDF

    CXK581000M

    Abstract: CXK581000P 15L15LL
    Text: 54E D • &3B23&3 000475b TTT I SONY C X K 581000P/M SONY. -10L712U15L -10LLV12LU/15LL 131072-word X 8-bit High Speed CMOS Static RAM SONY C O R P / C O M P O N E N T PRODS Description CXK581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8


    OCR Scan     		3fl23fl3 000475b CXK581000P/M 10U12U15L -10LL712LL715LL CXK581000P CXK581000M 131072-word CXK581000P/M-1OL/1OLL 15L15LL PDF

    TS0PD2B-P-0000-8

    Abstract: cxk58257 TSOP 2313
    Text: S4E SONY. J> m &3Ò23&3 OOD Mb b ? ÔT4 • S O N Y ?^ y é - i CXK58257ATM/AYM -70LLX/85LLX/1OLLX/12LLX 32768-word x 8-bit High Speed CMOS Static RAM Description SONY CORP/COMPONENT CXK58257ATM/AYM is a 256K bits, 32,768 words by 8 bits, CMOS static RAM.


    OCR Scan     		0004bb7 CXK58257ATM/AYM LLX/85LLX/1OLLX/12LLX 32768-word CXK58257ATM: CXK58257AYM: CXK58257ATM/AYM-70LLX CXK58257ATM/AYM-85LLX CXK58257ATrent TS0PD2B-P-0000-8 cxk58257 TSOP 2313 PDF

    CXK584000

    Abstract: CXK584000M 100 10L AD CXK584000YM
    Text: 54E SONY. J> m &3&E3&3 0DG4ÖS3 071 « S O N Y CXK584000TM/YM/M/P SiiSfeSKiSW 524288-word x 8-bit High Speed CMOS Static RAM SONY CORP/COMPONENT Description CXK584000TM/YM/M/P is a 4,194,304 bits high speed CMOS static RAM organized as 524,288 words by 8-bits. Polysilicon TFT cell technology realized


    OCR Scan     		CXK584000TM/YM/M/P W85L710L -55LL/7DLL/85LL/T0LL 524288-word CXK584000TM/YM/M/P 55ns/110ns 70ns/140ns 85ns/170ns 100ns/ B3B23B3 CXK584000 CXK584000M 100 10L AD CXK584000YM PDF

    CXK58257P

    Abstract: SONY CX 12LU Sony 187 sony cxk58257m-12l
    Text: SONY CORP/COMPONENT PRODS HTE 1> Ô3Ô2363 CXK58257P/SP/M SONY üüOBb37 5 WSONY 70L/85L/10L/12L 70LL/85LL/10LL/12LL 32768-word X 8 bit High Speed CMOS Static RAM Package Outline Description Unit: mm CXK58257P/SP/M is a 2 6 2 ,1 4 4 bits high speed CMOS static RAM organized as 3 2 ,7 6 8 words by


    OCR Scan     		CXK58257P/SP/M 70L/85L/10L/12L 70LL/85LL/10LL/12LL 32768-word CXK58257P/SP/M CXK58257P/SP/Mâ 120ns CXK58257P SONY CX 12LU Sony 187 sony cxk58257m-12l PDF

    sony 58257

    Abstract: K58257A QD02b tnc 58 CXK58257AP CXK58257AM
    Text: SONY C O R P / C O M P O N E N T PR OP S MTE T> • fi3fi23fi3 0 0 D 2 bD 7 4 «SONY SONY CXK58257AP/ASP/AM70L L ^ 85L ^ ^ L X / * 2L L X ¿ ^ 7 ~ / 4 32768-word x 8 -b 8t High Speed CMOS Static RAM Description CXK58257AP 28 pin D IP (Plastic CXK58257AP/ASP/AM is 262,144 bits high speed


    OCR Scan     		fi3fi23fi3 32768-word CXK58257AP/ASP/AM CXK58257AP CXK58257AP/ASP/AM-70LX 70LLX CXK58257AP/ASP/AM-85LX 85LLX CXK58257AP/ASP/AM-10L/ CXK58257AP/ASP/AM sony 58257 K58257A QD02b tnc 58 CXK58257AM PDF

    t462

    Abstract: sony cxk58257m-12l CXK58257AP T46-2 CXK* Sony
    Text: S4E SONY« D 0302303 000Mb37 0L7 « S O N Y CXK58257AP/ASP/AM •7 0L/85L/10L/12L -70LL/85LL/1OLL/12LL* 32768-word x 8-bit High Speed CMOS Static RAM ‘ SONY C O R P / C O M P O N E N T PR OD S Description CXK58257AP 28 pin DIP Plastic C X K 5 8 2 5 7 A P /A S P /A M is 262,144 bits high


    OCR Scan     		3fl23fl3 0004b37 CXK58257AP/ASP/AM: 32768-word CXK58257AP/ASP/AM 300mil CXK58257AP/ASP/AM-70L, CXK58257AP/ASP/AM-85L, CXK58257AP/ 100ns t462 sony cxk58257m-12l CXK58257AP T46-2 CXK* Sony PDF

    Sony CMOS

    Abstract: CXK581000M CXK581000P CXK581000
    Text: S4E D SONY, Û3Ô53Ô3 00D47b? 7fl5 «SONY C X K 581O O O P / M ÌoLLX/?2LLX^5LLX 131072-word X 8-bit High Speed CMOS Static RAM SONY CORP/COMPONENT PROPS Description The C X K 5 8 1 0 0 0 P /M is a general purpose high speed CMOS static RAM organized as 131072 words by 8 bits. Operating on a single


    OCR Scan     		00D47b? cxk581ooop/m -1OLX/12LX/15LX/ 10LLX/12LLX/15LLX 131072-word CXK581 CXK581000P CXK581000M CXK581000P/M-1 100ns Sony CMOS CXK581000 PDF

    LH5164

    Abstract: km6264 oki cross reference w24512 cross hm6264 KM62256 MSM5178 uPD43256 PD4364 MSM51257
    Text: CROSS REFERENCE GUIDE SLOW SPEED CMOS SRAMs WINBOND HITACHI W241024 HM628128 W24512 - W24257 HM62256P/FP W2465 HM6264 SONY CXK581000P/M - CXK58257P/SP/M CXK5864BP FUJITSU MB841000 - MB84256 //PD43256 / PD4364 NEC - MB8464 TOSHIBA TC551001PL/FL - TC55257BP/BF


    OCR Scan     		W241024 HM628128 CXK581000P/M MB841000 W24512 W24257 HM62256P/FP CXK58257P/SP/M MB84256 uPD43256 LH5164 km6264 oki cross reference w24512 cross hm6264 KM62256 MSM5178 PD4364 MSM51257 PDF

    Ah 55l

    Abstract: No abstract text available
    Text: SONY CXK584000TM/YM/M/P|^C7oll0ioll 524288-word x 8-bit High Speed CMOS Static RAM Description CXK584000TM/YM/M/P is a 4,194,304 bits high speed CMOS static RAM organized as 524288-word CXK584000TM CXK584000YM 32 pin TSOP Plastic 32 pin TSOP (Plastic) CXK584000M


    OCR Scan     		CXK584000TM/YM/M/P| 524288-word CXK584000TM/YM/M/P CXK584000M CXK584000TM/YM/M/P-55L/55LL CXK584000TM/YM/M/P-70L/70LL CXK584000TM/YM/M/P-10L/1OLL -55L/70L/10L Ah 55l PDF

    AWPn

    Abstract: JG30 CXK58257B
    Text: SONY CXK58257BTM/BYM/BP/BM -55LL/70LL/10LL 32768-word x 8-bit High Speed CMOS Static RAM Description The CXK58257BTM/BYM/BP/BM is 262,144 bits high speed CMOS static RAM organized as 32768words by 8 bits. A polysilicon TFT cell technology realized extermely


    OCR Scan     		CXK58257BTM/BYM/BP/BM -55LL/70LL/10LL 32768-word 32768words -55LL -70LL -10LL AWPn JG30 CXK58257B PDF

    Untitled

    Abstract: No abstract text available
    Text: Sony. CXK58257AP/AM -70LLX/85LLX/1OLLX/12LLX -70LXÍ35LX,10LJ<,2LX * 32768-word x 8-bit High Speed CMOS Static RAM Description CXK58257AP 28 pin DIP Plastic CXK58257AP/AM is 262,144 bits high speed CMOS static RAM organized as 32,768 words by 8 bits and


    OCR Scan     		CXK58257AP/AM -70LLX/85LLX/1OLLX/12LLX 32768-word CXK58257AP CXK58257AM CXK58257AP/AM-70LX 70LLX CXK58257AP/AM-85LX 85LLX PDF

    ZA104

    Abstract: zu107 p028
    Text: SONY CXK58257CTM/CYM/CM/CP -70LLX 32768-word x 8-bit High Speed CMOS Static RAM Description CXK58257CTM CXK58257CYM 28 pin TSOP Plastic 28 pin TSOP (Plastic) CXK58257CM CXK58257CP 28 pin SOP (Plastic) 28 pin DIP (Plastic) The CXK58257CTM/CYM/CM/CP is 262,144 bits


    OCR Scan     		CXK58257CTM/CYM/CM/CP -70LLX 32768-word CXK58257CTM/CYM TSOP-28P-L01R CXK58257CTM/CYM/CM/CP ZA104 zu107 p028 PDF

    A1o4

    Abstract: j281 A120 CXK58257CM CXK58257C
    Text: SONY CXK58257CTM/CYM/CM/CP -55LL/70LL 32768-word x 8-bit High Speed CMOS Static RAM Preliminary Description The CXK58257CTM/CYM/CM/CP is 262,144 bits high speed CMOS static RAM organized as 32768 words by 8 bits. Special feature are operating on a single 5V


    OCR Scan     		CXK58257CTM/CYM/CM/CP -55LL770LL 32768-word CXK58257CTM/CYM/CM/CP -55LL -70LL CXK58257CTM/CYM COPPER/42 A1o4 j281 A120 CXK58257CM CXK58257C PDF

    Untitled

    Abstract: No abstract text available
    Text: SONY. CXK581001 P/M 70LL785LL 131,072-word x 8-bit High Speed CMOS Static RAM D escription CXK581001 P/M is a 1,048,576 bits high speed CMOS static RAMs organized as 131,072 words by 8-bit and CXK581001P 32 pin DIP Plastic CXK581001M 32 pin SOP (Plastic)


    OCR Scan     		CXK581001 70LL785LL 072-word CXK581001P CXK581001M CXK581001P/M-70L/70LL CXK581001P/M-85L/85LL CXK581001P/M -70LL/85LL PDF

    CXK58257CM

    Abstract: A120
    Text: SONY 1 CXK58257CTM/CYM/CM/CP -55LL/70LL 32768-word x 8-bit High Speed CMOS Static RAM Preliminary Description The CXK58257CTM/CYM/CM/CP is 262,144 bits high speed CMOS static RAM organized as 32768 words by 8 bits. Special feature are operating on a single 5V


    OCR Scan     		CXK58257CTM/CYM/CM/CP -55LL770LL 32768-word -55LL -70LL CXK58257CTM/CYM TSOTSOP028-P-0000-B CXK58257CM A120 PDF

    CXK58257

    Abstract: cxk56257b
    Text: SONY CXK58257BTM/BM -7QLLB/10LLB 32768-word x 8-bit High Speed CMOS Static RAM Description The CXK58257BTM/BM is 262,144 bits high speed CMOS static RAM organized as 32,768 words by 8 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data


    OCR Scan     		CXK58257BTM/BM -7QLLB/10LLB 32768-word CXK58257 CXK58257BTM CXK58257BM CXK58257BTM/BM 70LLB 10LLB cxk56257b PDF

    CXK584000

    Abstract: No abstract text available
    Text: SONY. CXK584000TM/YM/M/P -55U70ua5L,0L -55LL/70LL/85LL/1 OLL 524288-word x 8-bit High Speed CMOS Static RAM D escription CXK584000TM/YM/M/P is a 4,194,304 bits high speed CMOS static RAM organized as 524,288 words by 8-bits. Polysilicon TFT cell technology realized


    OCR Scan     		CXK584000TM/YM/M/P -55LL/70LL/85LL/1 524288-word 55ns/110ns -55L/55LL 70ns/140ns -70L/70LL 85ns/170ns -85L/85LL -10L/10LL CXK584000 PDF

    IJ01

    Abstract: CXK581000AYM CXK581OQOATM CXKS81003ATM SCHB
    Text: SONY CXK581OOOATM/AYM/AM -10LLB 131072-word x 8-bit High Speed CMOS Static RAM Description The CXK581 OOOATM/AYM/AM is a high speed CMOS static RAM organized as 131072 words by 8 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data


    OCR Scan     		CXK581OOOATM/AYM/AM -10LLB 131072-word CXK581OQOATM CXK581000AYM CXK561OOOAM CXK581 150ns 100ns IJ01 CXKS81003ATM SCHB PDF

    Untitled

    Abstract: No abstract text available
    Text: Sony. CXK 58110O TM /YM IS Ö W 131072-word X 8-bit High Speed CMOS Static RAM D escription CXK58110OTM/YM is a 1M bits, 131072 words by 8 bits, CMOS static RAM. It is suitable for portable and CXK581100TM 32 pin TSOP Plastic CXK581100YM 32 pin TSOP (Plastic)


    OCR Scan     		58110O CXK581100TM 131072-word CXK58110OTM/YM CXK581100YM CXK581100TM CXK581100VM CXK581100TM/YM-10L, -10LL CXK5811lative PDF

    Untitled

    Abstract: No abstract text available
    Text: C X K 58110OTM/YM -12LB SONY 131072-word x 8-bit High Speed CMOS Static RAM Description CXK581100TM/YM is a general purpose high speed CMOS static RAM organized as 131,072 words by 8 bits. CXK581100TM 32 pin T SO P Plastic CXK581100YM 32 pin T SO P (Plastic)


    OCR Scan     		58110OTM/YM -12LB 131072-word CXK581100TM/YM CXK581100TM CXK581100YM CXK581100TM: CXK581100YM: CXK581 PDF

    icc3 icc1

    Abstract: No abstract text available
    Text: SONY CXK581OOOATM/AYM/AM -10LLB 131072-word x 8-bit High Speed CMOS Static RAM Description The CXK581 OOOATM/AYM/AM is a high speed CMOS static RAM organized as 131072 words by 8 bits. A polysilicon T F T cell technology realized extremely low stand-by current and higher data


    OCR Scan     		CXK581OOOATM/AYM/AM -10LLB 131072-word CXK581 150ns 100ns T50P-MP-L01R TS0PQ32-P-GN0-6 Q01bb70 icc3 icc1 PDF

    Untitled

    Abstract: No abstract text available
    Text: SONY CXK58512TM/M -55LL/70LL/10LL 65536-word x 8-bit High Speed CMOS Static RAM Under development Description The CXK58512TM/M is a high speed CMOS static RAM organized as 65536-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention


    OCR Scan     		CXK58512TM/M -55LL/70LL/10LL 65536-word 65536-words -70LL -10LL 100ns -32P-L01 PDF

    Untitled

    Abstract: No abstract text available
    Text: SONY CXK582000TM/YM/M -85LL/10LL 262,144-word x 8-bit High Speed CMOS Static RAM Preliminary Description The CXK582000TM/YM/M is a high speed CMOS static RAM organized as 262,144-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data


    OCR Scan     		CXK582000TM/YM/M -85LL/10LL 144-word 144-words -85LL -10LL 100ns TSOP-32P-L01R PDF