LRB411DLT1G
Abstract: LRB411DLT3G MARKING D3E
Text: LESHAN RADIO COMPANY, LTD. Schottky barrier diode LRB411DLT1G LRB411DLT1G zApplications Low current rectification 3 1 zFeatures 1 Small mold type. SOT-23) 2) Low IR 3) High reliability. 2 SOT– 23 zConstruction Silicon epitaxial planar 3 CATHODE 1 ANODE
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LRB411DLT1G
OT-23)
OT-23
LRB411DLT1G
LRB411DLT3G
MARKING D3E
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Schottky barrier diode LRB411DLT1G LRB411DLT1G zApplications Low current rectification 3 1 zFeatures 1 Small mold type. SOT-23) 2) Low IR 3) High reliability. 2 SOT– 23 zConstruction Silicon epitaxial planar 3 CATHODE 1 ANODE
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LRB411DLT1G
OT-23)
OT-23
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Schottky barrier diode LRB411DLT1G LRB411DLT1G zApplications Low current rectification 3 1 2 zFeatures 1 Small mold type. SOT-23) 2) Low IR 3) High reliability. SOT– 23 zConstruction Silicon epitaxial planar z Pb-Free package is available
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LRB411DLT1G
OT-23)
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LRB421LT1G
Abstract: LRB421LT3G
Text: LESHAN RADIO COMPANY, LTD. Schottky barrier diode LRB421LT1G LRB421LT1G zApplications Low power rectification 3 1 zFeatures 1 Small mold type. SOT-23) 2) Low IR 3) High reliability. 2 SOT– 23 zConstruction Silicon epitaxial planar 3 CATHODE 1 ANODE z We declare that the material of product
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LRB421LT1G
OT-23)
OT-23
LRB421LT1G
LRB421LT3G
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bpw21 op
Abstract: 2SK147 ir photodiode amplifier BPW21 fast photodiode amplifier FD1500W low noise ir photodiode amplifier tp 0401 2SK147 equivalent SFH213
Text: advertisement LT1806: 325MHz Low Noise Rail-to-Rail SOT-23 Op Amp Saves Board Space – Design Note 254 Glen Brisebois The new tiny LT 1806 combines 325MHz gain bandwidth, 3.5nV/√Hz voltage noise, 100µV input offset voltage and rail-to-rail inputs and outputs in a SOT-23 package.
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LT1806:
325MHz
OT-23
LT1806
BPW34B
390kHz
ODD45W
170pF
bpw21 op
2SK147
ir photodiode amplifier
BPW21
fast photodiode amplifier
FD1500W
low noise ir photodiode amplifier
tp 0401
2SK147 equivalent
SFH213
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Schottky barrier diode LRB421LT1G LRB421LT1G S-LRB421LT1G zApplications Low power rectification 3 zFeatures 1 Small mold type. SOT-23) 2) Low IR 3) High reliability. 4) S- Prefix for Automotive and Other Applications Requiring
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LRB421LT1G
S-LRB421LT1G
OT-23)
AEC-Q101
OT-23
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SOT-23 marking d3e
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Schottky barrier diode LRB411DLT1G LRB411DLT1G S-LRB411DLT1G zApplications Low current rectification 3 zFeatures 1 Small mold type. SOT-23) 2) Low IR 3) High reliability. 4) S- Prefix for Automotive and O ther Applications Req uiring
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LRB411DLT1G
S-LRB411DLT1G
OT-23)
OT-23
SOT-23 marking d3e
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rkm sot-23
Abstract: rkm 21 rkm transistor RK7002 RKM 15 RK7002 equivalent 575mA2 RKM SOT
Text: RK7002 Transistors Interface and switching 60V, 115mA RK7002 zStructure Silicon N-channel MOSFET zDimensions (Unit : mm) zFeatures 1) Low on-resistance. 2) High-speed switching. 3) Low-voltage drive(5V). ROHM : SST3 E I A J : SOT-23 Abbreviated symbol : RKM
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RK7002
115mA)
OT-23
rkm sot-23
rkm 21
rkm transistor
RK7002
RKM 15
RK7002 equivalent
575mA2
RKM SOT
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rkm sot-23
Abstract: rkm 21 RKM SOT rkm transistor rkm 05 RK7002 equivalent rkm rk7002 RK7002 rkm sot23
Text: RK7002 Transistors Interface and switching 60V, 115mA RK7002 zStructure Silicon N-channel MOSFET zDimensions (Unit : mm) zFeatures 1) Low on-resistance. 2) High-speed switching. 3) Low-voltage drive(4V). ROHM : SST3 E I A J : SOT-23 Abbreviated symbol : RKM
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RK7002
115mA)
OT-23
rkm sot-23
rkm 21
RKM SOT
rkm transistor
rkm 05
RK7002 equivalent
rkm rk7002
RK7002
rkm sot23
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Untitled
Abstract: No abstract text available
Text: MMBT4126 PNP General-Purpose Amplifier Description C This device is designed for general-purpose amplifier and switching applications at collector currents to 10 A as a switch and to 100 mA as an amplifier. E SOT-23 Mark: ZF B Ordering Information Part Number
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MMBT4126
OT-23
OT-23
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SOT-23 Mark ZF
Abstract: Mark ZF SOT-23 ZF 2N5551S ZF marking ZF SOT23 sot 23 zf MARKING ZF SOT-23
Text: SEMICONDUCTOR 2N5551S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking ZF No. 1 Item Marking Device Mark ZF 2N5551S hFE Grade - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method
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2N5551S
OT-23
SOT-23 Mark ZF
Mark ZF
SOT-23 ZF
2N5551S
ZF marking
ZF SOT23
sot 23 zf
MARKING ZF SOT-23
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sot 23 mark 6C
Abstract: marking code 6c
Text: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET LRK7002WT1G Silicon N-Channel 3 zFeatures 1 1 Low on-resistance. 2) Fast switching speed. 3) Low-voltage drive. 4) Easily designed drive circuits. 5) Easy to parallel. 6) Pb-Free package is available. 2 SOT-23 TO-236AB)
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LRK7002WT1G
OT-23
O-236AB)
3000/Tape
LRK7002WT3G
10000/Tape
195mm
150mm
sot 23 mark 6C
marking code 6c
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baw56
Abstract: BAV99 application circuit bav99 BAV70 Diode bav99 Diode bav99 8 BAV99 application bav99 marking
Text: BAV70 / BAW56 / BAV99 Diodes Switching diode BAV70 / BAW56 / BAV99 ∗This product is available only outside of Japan. zExternal dimensions Units : mm zApplication Ultra high speed switching 2.9±0.2 2.4±0.2 1.3+0.2 −0.1 ROHM : SSD3 EIAJ : − JEDEC : SOT-23
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BAV70
BAW56
BAV99
OT-23
BAV70
BAW56
BAV99
application circuit bav99
Diode bav99
Diode bav99 8
BAV99 application
bav99 marking
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SOT-23 ZF
Abstract: 2N4126 SOT-23 Mark ZF 2N3906 MMBT4126
Text: 2N4126 MMBT4126 C E C TO-92 BE SOT-23 B Mark: ZF PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents to 10 µA as a switch and to 100 mA as an amplifier. Sourced from Process 66. See 2N3906 for
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2N4126
MMBT4126
OT-23
2N3906
2N4126
SOT-23 ZF
SOT-23 Mark ZF
MMBT4126
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Untitled
Abstract: No abstract text available
Text: 2N4126 / MMBT4126 2N4126 MMBT4126 C E C B TO-92 B SOT-23 E Mark: ZF PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents to 10 µA as a switch and to 100 mA as an amplifier. Absolute Maximum Ratings*
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2N4126
MMBT4126
2N4126
OT-23
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SOT-23 Mark ZF
Abstract: SOT-23 ZF PN2222N 2N4126 CBVK741B019 F63TNR MMBT4126
Text: 2N4126 / MMBT4126 2N4126 MMBT4126 C E C B TO-92 B SOT-23 E Mark: ZF PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents to 10 µA as a switch and to 100 mA as an amplifier. Absolute Maximum Ratings*
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2N4126
MMBT4126
2N4126
OT-23
SOT-23 Mark ZF
SOT-23 ZF
PN2222N
CBVK741B019
F63TNR
MMBT4126
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Untitled
Abstract: No abstract text available
Text: 2N4126 / MMBT4126 2N4126 MMBT4126 C E C B TO-92 B SOT-23 E Mark: ZF PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents to 10 µA as a switch and to 100 mA as an amplifier. Absolute Maximum Ratings*
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2N4126
MMBT4126
2N4126
OT-23
O-92-3
2N4126BU
2N4126TA
2N4126TAR
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MARKING W3 SOT23 TRANSISTOR
Abstract: SOT-23 ZF MARKING ZF SOT-23 Mark ZF sot-23 MARKING CODE Zf 2n4126
Text: 2N4126 / MMBT4126 2N4126 MMBT4126 C E C B TO-92 B SOT-23 E Mark: ZF PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents to 10 µA as a switch and to 100 mA as an amplifier. Absolute Maximum Ratings*
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2N4126
MMBT4126
2N4126
OT-23
2N4126TA
2N4126BU
O-92-3
MARKING W3 SOT23 TRANSISTOR
SOT-23 ZF
MARKING ZF SOT-23
Mark ZF
sot-23 MARKING CODE Zf
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sot23 transistor marking ZF
Abstract: No abstract text available
Text: 2N4126 / MMBT4126 2N4126 MMBT4126 C E C B TO-92 B SOT-23 E Mark: ZF PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents to 10 µA as a switch and to 100 mA as an amplifier. Absolute Maximum Ratings*
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2N4126
MMBT4126
2N4126
OT-23
2N4126TA
2N4126BU
O-92-3
sot23 transistor marking ZF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMBZ5V6ALT1/D SEMICONDUCTOR TECHNICAL DATA MMBZ5V6ALT1 * MMBZ6V2ALT1 MMBZ15VALT1 MMBZ20VALT1 5.6, 6.2 15 & 20 Volt SOT-23 Dual Monolithic Common Anode Zeners Motorola Preferred Devices Transient Voltage Suppressors for ESD Protection
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OCR Scan
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OT-23
2PHX31323B-1
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2N4126
Abstract: SOT-23 Mark ZF SOT-23 ZF 2N3906 MMBT4126 Mark ZF
Text: 2N4126 MMBT4126 SOT-23 B Mark: ZF PNP General Purpose Amplifier This device is designed for general purpose am plifier and switching applications at collector currents to 10 jiA as a switch and to 100 mA as an am plifier. Sourced from Process 66. See 2N3906 for
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OCR Scan
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2N4126
MMBT4126
OT-23
2N3906
SOT-23 Mark ZF
SOT-23 ZF
MMBT4126
Mark ZF
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MARKING ZF SOT-23
Abstract: KDS184 kec marking SOT ZF SOT23 kec semiconductor marking SOT
Text: _ SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO-LTD KDS184 SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES • • • • Small Package Low Forw ard Voltage F ast Reverse Recovery Time Small Total Capacitance : SOT-23.
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OCR Scan
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KDS184
OT-23.
Ta-25
01/zF
MARKING ZF SOT-23
KDS184
kec marking SOT
ZF SOT23
kec semiconductor marking SOT
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SOT-23 ZF
Abstract: KDS226 MARKING ZF SOT-23 ZF SOT23
Text: _ SEMICONDUCTOR TECHNICAL DATA KOREAELECTRONICSCO.,LTD. KDS226 SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. : SOT-23. : V f =0.9V Typ. . : trr=1.6ns(Typ.). : Cr=0.9pF (Typ.). DIM MAXIMUM RATINGS (Ta=25°C) SYMBOL RATING UNIT Maximum (Peak) Reverse Voltage
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OCR Scan
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KDS226
OT-23.
100mA
01/zF
SOT-23 ZF
KDS226
MARKING ZF SOT-23
ZF SOT23
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Switching Diode BAL 74 • For high-speed switching Type Marking Ordering Code tape and reel BAL74 JCs Q62702-A718 Pin Configuration Package1) SOT-23 o- H3- o 3 2 EH M 0001 Maximum Ratings Parameter Symbol Values Unit V
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OCR Scan
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BAL74
Q62702-A718
OT-23
M0001
fl235L05
fl5BSb05
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