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    SOT TRANSISTOR K3N Search Results

    SOT TRANSISTOR K3N Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K341R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    SOT TRANSISTOR K3N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    k3n transistor

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT3906 Multi-Chip TRANSISTOR PNP SOT-363 FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current -0.2 A ICM: Collector-base voltage -40 V V(BR)CBO:


    Original     		PDF OT-363 MMDT3906 OT-363 -10mA, -50mA, 100MHz -10mA k3n transistor

    sot transistor k3n

    Abstract: DS30059 marking K3N Transistor 2Ay
    Text: MMBT3906 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · Epitaxial Planar Die Construction Complementary NPN Type Available MMBT3904 Ideal for Medium Power Amplification and Switching SOT-23 A C TOP VIEW Mechanical Data · · · · · Case: SOT-23, Molded Plastic


    Original     		PDF MMBT3906 MMBT3904) OT-23 OT-23, MIL-STD-202, DS30059 sot transistor k3n marking K3N Transistor 2Ay

    Untitled

    Abstract: No abstract text available
    Text: MMBT3906 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · Epitaxial Planar Die Construction Complementary NPN Type Available MMBT3904 Ideal for Medium Power Amplification and Switching SOT-23 A C TOP VIEW Mechanical Data · · · · · Case: SOT-23, Molded Plastic


    Original     		PDF MMBT3906 MMBT3904) OT-23 OT-23, MIL-STD-202, DS30059

    MMDT3906

    Abstract: No abstract text available
    Text: MMDT3906 MMDT3906 Multi-Chip TRANSISTOR PNP SOT-363 FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: -0.2 A Collector-base voltage -40 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ MAKING: K3N


    Original     		PDF MMDT3906 OT-363 -50mA, -10mA, 100MHz -10mA MMDT3906

    Transistor 2Ay

    Abstract: PNP 2ay 2AY SOT-23
    Text: MMBT3906 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR POWER SEMICONDUCTOR Features • • • Epitaxial Planar Die Construction Complementary NPN Type Available MMBT3904 Ideal for Medium Power Amplification and Switching SOT-23 A C TOP VIEW B C Mechanical Data


    Original     		PDF MMBT3906 MMBT3904) OT-23 OT-23, MIL-STD-202, -10mA, -50mA, Transistor 2Ay PNP 2ay 2AY SOT-23

    Untitled

    Abstract: No abstract text available
    Text: MMDT3906 PNP Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 * Features .055 1.40 .047(1.20) .021REF (0.525)REF Power dissipation. PCM : 0.2 W (Tamp.=25 C) O .018(0.46) .010(0.26) : - 0.2 A C2 Collector -base voltage


    Original     		PDF MMDT3906 OT-363 021REF 026TYP 65TYP) 01-Jan-2006

    K3N SOT-23

    Abstract: K3N sot23 MMBT3906
    Text: MMBT3906 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR SPICE MODEL: MMBT3906 Features • · · · Epitaxial Planar Die Construction Complementary NPN Type Available MMBT3904 Ideal for Medium Power Amplification and Switching SOT-23 A C B Mechanical Data · ·


    Original     		PDF MMBT3906 MMBT3904) OT-23 OT-23, J-STD-020A MIL-STD-202, DS30059 K3N SOT-23 K3N sot23 MMBT3906

    marking K3N

    Abstract: No abstract text available
    Text: PRELIMINARY MMDT3906 DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR POWER SEMICONDUCTOR Features • • • Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package SOT-363 A C2 B1 E1 KXX Mechanical Data


    Original     		PDF MMDT3906 OT-363 OT-363, MIL-STD-202, -10mA, -50mA, 100MHz marking K3N

    Untitled

    Abstract: No abstract text available
    Text: MMBT3906 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR SPICE MODEL: MMBT3906 Features • · · · Epitaxial Planar Die Construction Complementary NPN Type Available MMBT3904 Ideal for Medium Power Amplification and Switching SOT-23 A C B Mechanical Data · ·


    Original     		PDF MMBT3906 MMBT3904) OT-23 OT-23, J-STD-020A MIL-STD-202, DS30059

    marking code k3n

    Abstract: No abstract text available
    Text: MMDT3906 PNP/PNP Multi-Chip Transistor FEATURES • Ideal for low power amplification and switching MECHANICAL DATA • Case: SOT-363 Plastic • Lead Free in RoHS 2002/95/EC Compliant Maximum Ratings @ TA = 25℃ Characteristic Symbol Value Unit Collector-Base Voltage


    Original     		PDF MMDT3906 OT-363 2002/95/EC Collector-base-40 Jun-2009, KSTR03 MMDT3906 marking code k3n

    Untitled

    Abstract: No abstract text available
    Text: NEW PRODUCT MMDT3906 DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR POWER SEMICONDUCTOR Features • • • Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package SOT-363 C2 A Dim Min Max B1 A 0.10


    Original     		PDF MMDT3906 OT-363 OT-363, MIL-STD-202, -10mA, -50mA, 100MHz

    MMDT3906

    Abstract: transistor Vbe 1 Vbe 40 transistor
    Text: MMDT3906 PNP Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 $VXIIL[RI&VSHFLILHVKDORJHQ OHDGIUHH * Features .055 1.40 .047(1.20) .021REF (0.525)REF Power dissipation. PCM : 0.2 W (Tamp.=25 C) O .018(0.46)


    Original     		PDF MMDT3906 OT-363 021REF 026TYP 65TYP) 06-May-2010 MMDT3906 transistor Vbe 1 Vbe 40 transistor

    K3N SOT-23

    Abstract: Marking r2a 2AY SOT-23
    Text: MMBT3906 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · Epitaxial Planar Die Construction Complementary NPN Type Available MMBT3904 Ideal for Medium Power Amplification and Switching SOT-23 Dim Min Max A 0.37 0.51 B 1.19 1.40 C 2.10 2.50 D 0.89


    Original     		PDF MMBT3906 MMBT3904) OT-23 OT-23, MIL-STD-202, -10mA, -50mA, K3N SOT-23 Marking r2a 2AY SOT-23

    Untitled

    Abstract: No abstract text available
    Text: MMBT3906 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · Epitaxial Planar Die Construction Complementary NPN Type Available MMBT3904 Ideal for Medium Power Amplification and Switching SOT-23 Dim Min Max A 0.37 0.51 B 1.19 1.40 C 2.10 2.50 D 0.89


    Original     		PDF MMBT3906 MMBT3904) OT-23 OT-23, MIL-STD-202, -10mA, -50mA,

    sot transistor k3n

    Abstract: k3n transistor
    Text: SPICE MODEL: MMDT3906 MMDT3906 Lead-free DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · · Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching SOT-363 A Ultra-Small Surface Mount Package C2 Lead Free/RoHS Compliant Note 3


    Original     		PDF MMDT3906 OT-363 J-STD-020C MIL-STD-202, DS30124 sot transistor k3n k3n transistor

    k3n transistor

    Abstract: sot transistor k3n
    Text: SPICE MODEL: MMDT3906 MMDT3906 Lead-free DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · · Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching SOT-363 A Ultra-Small Surface Mount Package C2 Lead Free/RoHS Compliant Note 3


    Original     		PDF MMDT3906 OT-363 J-STD-020C MIL-STD-202, DS30124 k3n transistor sot transistor k3n

    Untitled

    Abstract: No abstract text available
    Text: MMDT3906 NEW PRODUCT DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package SOT-363 C2 A Dim Min Max B1 A 0.10 0.30 B 1.15 1.35 C


    Original     		PDF MMDT3906 OT-363 OT-363, MIL-STD-202, -10mA, -50mA, 100MHz

    npn k3n

    Abstract: k3n transistor K3N Code sot-23 on semiconductor K3N SOT-23 sot transistor k3n DS30059 J-STD-020A MMBT3904 MMBT3906 MMBT3906 k3n
    Text: MMBT3906 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · · Epitaxial Planar Die Construction Complementary NPN Type Available MMBT3904 Ideal for Medium Power Amplification and Switching SOT-23 A C B Mechanical Data · · · · · · · · C


    Original     		PDF MMBT3906 MMBT3904) OT-23 OT-23, J-STD-020A MIL-STD-202, DS30059 npn k3n k3n transistor K3N Code sot-23 on semiconductor K3N SOT-23 sot transistor k3n J-STD-020A MMBT3904 MMBT3906 MMBT3906 k3n

    k3n transistor

    Abstract: K3N SOT-23 npn k3n K3N sot23 sot transistor k3n marking K3N TRANSISTOR K3N sot23 k3n
    Text: MMBT3906 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · · Epitaxial Planar Die Construction Complementary NPN Type Available MMBT3904 Ideal for Medium Power Amplification and Switching SOT-23 A C B Mechanical Data · · · · · · · · C


    Original     		PDF MMBT3906 MMBT3904) OT-23 OT-23, J-STD-020A MIL-STD-202, DS30059 k3n transistor K3N SOT-23 npn k3n K3N sot23 sot transistor k3n marking K3N TRANSISTOR K3N sot23 k3n

    2AY SOT-23

    Abstract: IC MARKING 2ay PNP 2ay K3N SOT-23 Transistor 2Ay DS30059 MMBT3904 MMBT3906 surface mount npn transistor sot-23 vishay FE60
    Text: MMBT3906 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary NPN Type Available MMBT3904 Ideal for Medium Power Amplification and Switching SOT-23 -H .h -a T O P V IE W Mechanical Data_ Case: SOT-23, Molded Plastic


    OCR Scan     		PDF MMBT3906 MMBT3904) OT-23, MIL-STD-202, OT-23 -10mA, 100MHz -100nA, 2AY SOT-23 IC MARKING 2ay PNP 2ay K3N SOT-23 Transistor 2Ay DS30059 MMBT3904 MMBT3906 surface mount npn transistor sot-23 vishay FE60

    npn k3n

    Abstract: k3n transistor DS30059 MMBT3904 MMBT3906 marking K3N
    Text: MMBT3906 VISHAY PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR LITEMZI y POWER SEMICONDUCTOR Features Epitaxial Planar Die Construction Complementary NPN Type Available M M B T3904 Ideal for Medium Power Amplification and Switching SOT-23 -H .h - a TOF? VIEW


    OCR Scan     		PDF MMBT3906 MMBT3904) OT-23, MIL-STD-202, OT-23 -10mA, 100MHz -100nA, npn k3n k3n transistor DS30059 MMBT3904 MMBT3906 marking K3N

    BT3906

    Abstract: BT3904
    Text: MMBT3906 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • Epitaxial Planar Die Construction Complementary NPN Type Available M M B T3904 Ideal for Medium Power Amplification and Switching SOT-23 Mechanical Data_ Case: SO T-23, Molded Plastic


    OCR Scan     		PDF MMBT3906 T3904) OT-23 IL-STD-202, 100MHz -10mA, 300ns, DS30059 BT3906 BT3904

    MMBT3904

    Abstract: MMBT3906
    Text: ÏR A N S Y S ELECTRONICS LIMITED MMBT3906 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary NPN Type Available MMBT3904 Ideal for Medium Power Amplification and Switching SOT-23 -H h -A fcl TOP VIEW Mechanical Data_


    OCR Scan     		PDF MMBT3906 MMBT3904) OT-23, MIL-STD-202, OT-23 MMBT3906 -10mA, 100MHz MMBT3904

    Untitled

    Abstract: No abstract text available
    Text: MMDT3906 DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package SOT-363 H aK Dim Min Max FI A 0.10 0.30 R e' KXX Mechanical Data


    OCR Scan     		PDF MMDT3906 OT-363 OT-363, MIL-STD-202, -10mA, 100MHz -100nA, 300ns,