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    SOT-223 KD Search Results

    SOT-223 KD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    SOT-223 KD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    EDSD-1L8MM-REEL

    Abstract: QFn 64 tape carrier
    Text: TAPE AND REEL TAPE AND REEL SPECIFICATIONS—SURFACE MOUNT Tape and Reel Packing Tape and reel packing is available for all SO, TSOT thin SOT23 , SOT-23 3L/4L, SOT-223, SSOP, TSSOP, QFN, DFN and DD packages in accordance with EIA Specification 481-D with the following exceptions: (DFN(DCB), TSOT and SC70


    Original     		PDF OT-23 OT-223, 481-D EIA-418 356mm EDSD-1L8MM-REEL QFn 64 tape carrier

    pm2222a

    Abstract: pm2222 pzt222a PZT2222AT1 PZT2222AT3 PZT2907AT1 QS 100 NPN Transistor MARK WAW
    Text: MOTOROU Order this document by P~2222AT1/D SEMICONDUCTOR TECHNICAL DATA NPN Siiicon Planar Epitmia[ Transistor PzT222aTl Motorola PrsferredDevlcs This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is


    Original     		PDF 2222AT1/D PzT222aTl OT-223 PZT2907AT1 2PHXSM57F-1 Pm2222AT1/D pm2222a pm2222 pzt222a PZT2222AT1 PZT2222AT3 PZT2907AT1 QS 100 NPN Transistor MARK WAW

    transistor marking code 12W SOT-23

    Abstract: MGB20N40CL laptop charging crb kp series stepper motor japan servo co 2n3773 power Amplifier circuit diagrams MJ2955 TRANSISTOR pwm brush dc motor controller sg3526 SG3526 boost controller for PWM fan tl494 tip122 tip127 mosfet audio amp
    Text: SG388/D Rev. 1, Aug-1999 ON Semiconductor PUBLICATION ORDERING INFORMATION USA/EUROPE Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5193, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada


    Original     		PDF SG388/D Aug-1999 r14153 transistor marking code 12W SOT-23 MGB20N40CL laptop charging crb kp series stepper motor japan servo co 2n3773 power Amplifier circuit diagrams MJ2955 TRANSISTOR pwm brush dc motor controller sg3526 SG3526 boost controller for PWM fan tl494 tip122 tip127 mosfet audio amp

    BSP603S2L

    Abstract: No abstract text available
    Text: BSP603S2L 2SWL026£ 3RZHU7UDQVLVWRU 3URGXFW 6XPPDU\ HDWXUH • 1&KDQQHO • QKDQFHPHQW PRGH • /RJLF /HYHO 9'6  9 5 '6 RQ  PΩ ,'  $ 627  • Green Product (RoHS Compliant) • AEC Qualified 7\SH %636/ 3DFNDJH 627  0D[LPXP 5DWLQJV DW 7M


    Original     		PDF BSP603S2L 2SWL026£ BSP60quirements, BSP603S2L

    QM5HL-24

    Abstract: 2sk2850 transistor qm5hl 2SK2850 transistor pnp 600v. 1a. to 92 QM5HL24 MG20G6EL1 600V PNP pnp transistor 600V NPN Transistor 600V
    Text: Next W M.T O .C Semiconductors00-YDiscretes W 1 M.T . O W C W WW .100Y. M.T O W .C ZTX~Series Transistors .TW W product Detailed Ware available on: us. 100y. com. tw W 00Y specifications 1 M.T . M O W O C . .C WW .1Pol00YIc max Part No. Product No. Manufacturer


    Original     		PDF 10silicon ZTX653 3P/TO-92 NPN00Y ZTX689B ZTX690B NPN100Y AT-31033-TR1 QM5HL-24 2sk2850 transistor qm5hl 2SK2850 transistor pnp 600v. 1a. to 92 QM5HL24 MG20G6EL1 600V PNP pnp transistor 600V NPN Transistor 600V

    P2T65

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA P2T651T1 NPN Silicon Planar E pitaxial Transistor Motorola Preferred Device This NPN Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT-223 package which is


    OCR Scan     		PDF OT-223 PZT651T1 inch/1000 PZT651T3 inch/4000 P2T65

    NPN BH RE

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BCP56T1 SERIES NPN Silicon E pitaxial TVansistor M otorola Preferred Dev tee These NPN Silicon Epitaxial transistors are designed tor use in audio amplifier applications. The device is housed in the SOT-223 package, which is


    OCR Scan     		PDF OT-223 BCP56T1 inch/1000 BCP56T3 inch/4000 BCP53T1 NPN BH RE

    KT 117A

    Abstract: SMD CODE HBA
    Text: BSP 315P I nf ineon technologies Preliminary Data SIPMOS Small-Signal-T ransistor Features Product Summary • P Channel • Enhancement mode • Avalanche rated • Logic Level • dvldt rated Typ Package BSP 315 P SOT-223 Ordering Code Q67042-S4004 Marking


    OCR Scan     		PDF OT-223 BSP315P Q67042-S4004 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T KT 117A SMD CODE HBA

    Untitled

    Abstract: No abstract text available
    Text: Order this document by MC33375/D M MOTOROLA Advance Information Low Dropout 300 mA Voltage Regulator w ith ON/OFF Control The MC33375 series are micropower low dropout voltage regulators available in a wide variety of output voltages as well as packages, SOT-223,


    OCR Scan     		PDF MC33375/D MC33375 OT-223,

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS SOT-223 for Surface Mount MEDIUM POWER TMOS FET 300 mA 60 VOLTS RDS on = 1-7 OHM MAX This TMOS medium power field effect transistor is designed for


    OCR Scan     		PDF OT-223

    motorola 5118

    Abstract: SOT-223 KD
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M V7005T1 Silicon Epicap Diode Motorola Preferred Device This silicon epicap diode is designed for use in high capacitance, high-tuning ratio applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.


    OCR Scan     		PDF OT-223 MV7005T1 inch/1000 MV7005T3 inch/4000 V7005T1 7005T1 motorola 5118 SOT-223 KD

    2n06v

    Abstract: No abstract text available
    Text: SGS-THOMSON * 7 # [MOeiMillLieraeiDIgS STN2N06 N - CHANNEL ENHANCEMENT MODE _ POWER MOS TRANSISTOR ADVANCE DATA TYPE S TN 2N 06 V dss RDS on I dcont 60 V < 0.2 50 Q. 2 A . TYPICAL RDs(on) = 0.21 C2 . AVALANCHE RUGGED TECHNOLOGY . SOT-223 CAN BE WAVE OR REFLOW


    OCR Scan     		PDF STN2N06 OT-223 OT-223 2n06v

    Untitled

    Abstract: No abstract text available
    Text: STN2NE06 N-CHANNEL 60V - 0.18ß - 2A - SOT-223 STripFET POWER MOSFET TYPE V dss R d S oii Id S TN 2N E06 60 V < 0.2 5 Q. 2 A • . . . . TYPICAL RDS(on) = 0.18 EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED APPLICATION ORIENTED


    OCR Scan     		PDF STN2NE06 OT-223 OT-223

    Untitled

    Abstract: No abstract text available
    Text: STN2NF06 N - CHANNEL 60V - 0.120 - 2A - SOT-223 STripFET POWER MOSFET TYP E STN2N F06 V dss 60 V R d S oii Id < 0 .1 5 Q. 2 A . . TYPICAL RDs(on) =0.12 £2 EXCEPTIONAL dv/dt CAPABILITY . AVALANCHE RUGGED TECHNOLOGY . 100 % AVALANCHE TESTED . APPLICATION ORIENTED


    OCR Scan     		PDF STN2NF06 OT-223 OT-223

    Untitled

    Abstract: No abstract text available
    Text: STN4NE03L N - CHANNEL 30V - 0.037^ - 4A - SOT-223 STripFET POWER MOSFET TYP E V S TN 4N E03L dss 30 V R D S o n Id < 0 .0 5 Q. 4 A . TYPICAL Ros(on) =0.037 £2 . EXCEPTIONAL dv/dt CAPABILITY . AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . APPLICATION ORIENTED


    OCR Scan     		PDF STN4NE03L OT-223 OT-223 P008B

    FT960

    Abstract: No abstract text available
    Text: Order this data sheet by MMFT960T1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N-Channel Enhancem ent-M ode Silicon G ate TMOS SOT-223 for Surface Mount This TMOS medium power field effect transistor is designed for high speed, low loss power switching applications such as


    OCR Scan     		PDF MMFT960T1/D OT-223 FT960

    TRANSISTOR SMD MARKING CODE kd

    Abstract: No abstract text available
    Text: BSP 123 Infineon t echnologi es SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level •W = a8 -2 0V Type Vbs b f lDS on) Package Marking 0.38 A 6n SOT-223 BSP 123 BSP 123 100 V Type Ordering Code Tape and Reel Information


    OCR Scan     		PDF OT-223 Q67000-S306 E6327 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T TRANSISTOR SMD MARKING CODE kd

    2n10l

    Abstract: n10l
    Text: * 7# TYPE STN 2N 10L SGS-THOMSON [MOeiMillLieraeiDIgS S T N 2 N1 0 L N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss RDS on Id 100 V < 0.5 Ç1 2 A • TYPICAL RDS(on) = 0.35 £2 . AVALANCHE RUGGED TECHNOLOGY . SOT-223 CAN BE WAVE OR REFLOW SOLDERED


    OCR Scan     		PDF OT-223 OT-223 2n10l n10l

    Untitled

    Abstract: No abstract text available
    Text: STN4NE03 N - CHANNEL 30V - 0.045ft - 4A - SOT-223 STripFET POWER MOSFET TYPE V dss R D S o n Id STN 4N E03 30 V < 0 .0 6 Q 4 A . TYPICAL R d s (oh) = 0.045 £1 m EXCEPTIO NALdv/dt CAPABILITY . AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . APPLICATION ORIENTED


    OCR Scan     		PDF STN4NE03 045ft OT-223 OT-223

    FAIRCHILD SOT-223 MARK

    Abstract: MMBTA65 MPSA64 MPSA65 PZTA65
    Text: fv* '€2 CZ> T O R MMBTA65 SOT-23 PZTA65 B / PZTA65 TO-92 / MMBTA65 MPSA65 SOT-223 M a rk : 2 W PNP Darlington Transistor T h is d e v ic e is d e s ig n e d fo r a p p lic a tio n s re q u irin g e x tre m e ly high c u rre n t g a in at c u rre n ts to 80 0 m A . S o u rc e d fro m P roce ss 61.


    OCR Scan     		PDF MPSA65 MMBTA65 OT-23 PZTA65 OT-223 MPSA64 FAIRCHILD SOT-223 MARK MMBTA65 MPSA65 PZTA65

    1N10

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA ransistor Medium Power Field Effect N-Channel Enhancement Mode Silicon Gate TMOS E-FET “ SOT-223 for Surface Mount M o to ro la P r e fe r re d D e v ic e M E D IU M P O W E R T M O S FET 1 AMP 100 V O LTS T h is a d v a n c e d E -F E T is a T M O S M e d iu m P o w e r M O S F E T


    OCR Scan     		PDF OT-223 MMFT1N10E 1N10

    neas7

    Abstract: No abstract text available
    Text: SIEMENS Mini PROFET BSP 350 MiniPROFET • • • • • • • • • High-side switch Short-circuit protection Overtemperature protection with hysteresis Overload protection Overvoltage protection Reverse battery protection1 Switching inductive load


    OCR Scan     		PDF Q67000-S227 neas7

    Untitled

    Abstract: No abstract text available
    Text: SIEM EN S Preliminary Data BSP 350 PROFET • • • • • • • • High-side switch Short-circuit protection Overtemperature protection Overload protection Reverse battery protection Switching inductive load Clamp of negative output voltage with inductive loads


    OCR Scan     		PDF Q67000-S227 pt350 ron350

    BSP450

    Abstract: GGfllb3b Q67000-S266
    Text: ô23Sb05 GGfllbBti ET? SIEM EN S BSP 450 MiniSmart • • • • • • • • • • • • High-side switch Short-circuit protection Input protection Overtemperature protection with hysteresis Overload protection Overvoltage protection Switching inductive load


    OCR Scan     		PDF 23Sb05 Q67000-S266 23SLDS 101520z BSP450 GGfllb3b Q67000-S266