SOT-23 187 Search Results

SOT-23 187 Result Highlights (5)

Part	Manufacturer	Description
MKZ6V2	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 6.2 V, SOT-23
MSZ6V8	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 6.8 V, SOT-346
MUZ20V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 20 V, SOT-323
MKZ6V8	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 6.8 V, SOT-23
MSZ12V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 12 V, SOT-346

SOT-23 187 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Package Information SOT-23 Tape and Reel Data and Package Dimensions SOT-23 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: SOT-23 parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate	Original	OT-23 177cm 330cm OT-23	PDF
Code sot-23 on semiconductor Abstract: wc sot23 rd sot23 Text: SOT-23 Tape and Reel Data SOT-23 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: SOT-23 parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film (Heat Activated	Original	OT-23 177cm 330cm Code sot-23 on semiconductor wc sot23 rd sot23	PDF
R222 smd Abstract: RA516-1 2007-000162 RA523-1 C627 SOT-23 smd R540 63MIL d516 gp SMD R618 SMD C548 Text: - This Document can not be used without Samsung's authorization - 10 Schematic Material List 10-1 Mainboard Parts List CODE LOCATION CATALOG DESCRIPTION 0401-000191 D16 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP 0401-000191 D14 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP	Original	CA-001175 BA41-00418A BA62-00194A BA62-00306A BA68-40005L 120OHM 143OHM/132MHZ 213OHM/390MHZ, R222 smd RA516-1 2007-000162 RA523-1 C627 SOT-23 smd R540 63MIL d516 gp SMD R618 SMD C548	PDF
4T SOT 23 Abstract: MMBD301 SOT23 JEDEC standard orientation Text: DISCRETE POWER AND SIGNAL TECHNOLOGIES MMBD301 CONNECTION DIAGRAM 3 3 PACKAGE 4T SOT-23 TO-236AB Low 2 NC 1 1 2 PACKAGE SOT-23 TO236AB Schottky Barrier Diode Sourced from Process GD Absolute Maximum Ratings* Sym Tstg TJ Wiv PF TA = 25OC unless otherwise noted	Original	MMBD301 OT-23 O-236AB O236AB 4T SOT 23 MMBD301 SOT23 JEDEC standard orientation	PDF
SF7B Abstract: No abstract text available Text: LMR12010 LMR12010 SIMPLE SWITCHER 20Vin, 1A Step-Down Voltage Regulator in SOT-23 Literature Number: SNVS731A LMR12010 SIMPLE SWITCHER® 20Vin, 1A Step-Down Voltage Regulator in SOT-23 Applications • ■ ■ ■ ■ ■ Point-of-Load Conversions from 3.3V, 5V, and 12V Rails	Original	LMR12010 LMR12010 20Vin, OT-23 SNVS731A SF7B	PDF
MMBD701 Abstract: D0 sot23 A0 SOT23 FS PKG CODE 49 Text: MMBD701 CONNECTION DIAGRAM 3 3 PACKAGE 5HF SOT-23 TO-236AB Low 2 NC 1 1 2 PACKAGE SOT-23 TO236AB Schottky Barrier Diode Sourced from Process GE Absolute Maximum Ratings* Sym Tstg TJ Wiv PF TA = 25OC unless otherwise noted Parameter Storage Temperature Operating Junction Temperature	Original	MMBD701 OT-23 O-236AB O236AB MMBD701 D0 sot23 A0 SOT23 FS PKG CODE 49	PDF
SOT23 JEDEC standard orientation Abstract: SOT-23 4TF MMBD301 Text: MMBD301 CONNECTION DIAGRAM 3 3 PACKAGE 4TF SOT-23 TO-236AB Low 2 NC 1 1 2 PACKAGE SOT-23 TO236AB Schottky Barrier Diode Sourced from Process GD Absolute Maximum Ratings* Sym Tstg TJ Wiv PF TA = 25OC unless otherwise noted Parameter Storage Temperature Operating Junction Temperature	Original	MMBD301 OT-23 O-236AB O236AB SOT23 JEDEC standard orientation SOT-23 4TF MMBD301	PDF
FAIRCHILD SOT-23 MARK 1a Abstract: BC846 SOT23 NPN sot23 mark NF 847C BC846 BC846A BC846B BC847 BC847A fAIRCHILD BC847b Text: BC847A BC847B BC847C C C E SOT-23 BC846A / BC846B / BC847A / BC847B / BC847C BC846A BC846B E B B SOT-23 Mark: 1A. / 1B. Mark: 1E. / 1F. / 1G. NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1.0 µA to 50 mA.	Original	BC847A BC847B BC847C OT-23 BC846A BC846B BC847A BC847B BC846A FAIRCHILD SOT-23 MARK 1a BC846 SOT23 NPN sot23 mark NF 847C BC846 BC847 fAIRCHILD BC847b	PDF
Untitled Abstract: No abstract text available Text: MMBT3904 PZT3904 C C E E C B C TO-92 SOT-23 E B B SOT-223 Mark: 1A NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23.	Original	2N3904 MMBT3904 PZT3904 2N3904 MMBT3904 OT-23 OT-223	PDF
XC6203X332 Abstract: XC6203X502 XC6203332 Text: ◆CMOS Low Power Consumption 16 A MAX. ◆Dropout Voltage : 150mV @ 100mA, 300mV @ 200mA ◆Maximum Output Current : More Than 400mA (3.3V) ◆Highly Accurate : ±2% ◆SOT-23 / SOT-89 / SOT-223 / TO-92 Package •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES	Original	150mV 100mA, 300mV 200mA 400mA OT-23 OT-89 OT-223 XC6203 XC6203P XC6203X332 XC6203X502 XC6203332	PDF
marking P2 sot-23 Abstract: wA MARKING SOT-23 SERIES DIODE 1403A MMBD1400 MMBD1401 MMBD1401A MMBD1403 MMBD1404 MMBD1405 1405A Text: CONNECTION DIAGRAMS 3 3 1401 3 3 1403 29 3 1 2 SOT-23 SOT-23 2 NC 1 2 1 2 3 3 1404 1405 2 1 MARKING MMBD1401 29 MMBD1404 MMBD1403 32 MMBD1405 1 33 34 1 2 1 2 High Voltage General Purpose Diode Sourced from Process 1H. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted	Original	OT-23 MMBD1401 MMBD1404 MMBD1403 MMBD1405 marking P2 sot-23 wA MARKING SOT-23 SERIES DIODE 1403A MMBD1400 MMBD1401A MMBD1404 MMBD1405 1405A	PDF
499-P44-10 Abstract: 499-040-00-D 499-P36-10-TO-236-3 TO-236-3 Wells-CTI 499-P36-10 499-P43-10-5 Sockets equivalent 499-P37-10-TO-243-4 780 AC Text: Burn-In Test Sockets 499 Series Surface Mount Family of SOT & TO Device Sockets • • • • • Wide product selection Gold contact plating High temperature materials Low insertion force Small outlines for greater board density 499-P36-10-TO-236-3 Lead SOT-23 Sockets	Original	499-P36-10-TO-236-3 OT-23 499-P43-10-5 499-P44-10-6 499-040-00-D 499-P35-10-3 O-252 499-P44-10 TO-236-3 Wells-CTI 499-P36-10 Sockets equivalent 499-P37-10-TO-243-4 780 AC	PDF
Wells-CTI Abstract: 499-P44-10 499-P36-10-TO-236-3 499-P37-10-TO-243-4 499-p37-10 499-p38-10 499-P43-10-5 wells-cti 410 Wells-CTI 499-P35 499-040-00-D Text: Burn-In Test Sockets 499 Series Surface Mount Family of SOT & TO Device Sockets • • • • • Wide product selection Gold contact plating High temperature materials Low insertion force Small outlines for greater board density 499-P36-10-TO-236-3 Lead SOT-23 Sockets	Original	499-P36-10-TO-236-3 OT-23 499-P43-10-5 499-P44-10-6 499-040-00-D 499-P35-10-3 O-252 Wells-CTI 499-P44-10 499-P37-10-TO-243-4 499-p37-10 499-p38-10 wells-cti 410 Wells-CTI 499-P35	PDF
transistor bel 100 Abstract: bel 188 transistor CBVK741B019 F63TNR MMBTA14 MPSA14 PN2222N PZTA14 Text: MMBTA14 PZTA14 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1N NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings* Symbol	Original	MMBTA14 PZTA14 OT-23 OT-223 transistor bel 100 bel 188 transistor CBVK741B019 F63TNR MMBTA14 MPSA14 PN2222N PZTA14	PDF

bel 188 transistor Abstract: MPSA92 FAIRCHILD SEMICONDUCTOR TR516 CBVK741B019 F63TNR MMBTA92 MPSA92 PN2222N PZTA92 SOT-23 2D Text: MMBTA92 PZTA92 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2D PNP High Voltage Amplifier This device is designed for high voltage driver applications. Sourced from Process 76. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter	Original	MMBTA92 PZTA92 OT-23 OT-223 bel 188 transistor MPSA92 FAIRCHILD SEMICONDUCTOR TR516 CBVK741B019 F63TNR MMBTA92 MPSA92 PN2222N PZTA92 SOT-23 2D	PDF
Untitled Abstract: No abstract text available Text: LMR12010 www.ti.com SNVS731A – SEPTEMBER 2011 – REVISED SEPTEMBER 2011 LMR12010 SIMPLE SWITCHER 20Vin, 1A Step-Down Voltage Regulator in SOT-23 Check for Samples: LMR12010 FEATURES 1 • • • • 23 • • • • • Input voltage range of 3V to 20V	Original	LMR12010 SNVS731A LMR12010 20Vin, OT-23 LMR12010X) LMR12010Y) OT23-6	PDF
SF7B Abstract: No abstract text available Text: LMR12010 www.ti.com SNVS731A – SEPTEMBER 2011 – REVISED SEPTEMBER 2011 LMR12010 SIMPLE SWITCHER 20Vin, 1A Step-Down Voltage Regulator in SOT-23 Check for Samples: LMR12010 FEATURES 1 • • • • 23 • • • • • Input voltage range of 3V to 20V	Original	LMR12010 SNVS731A LMR12010 20Vin, OT-23 LMR12010X) LMR12010Y) OT23-6 SF7B	PDF
Untitled Abstract: No abstract text available Text: MMBTA92 PZTA92 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2D PNP High Voltage Amplifier This device is designed for high voltage driver applications. Sourced from Process 76. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter	Original	MMBTA92 PZTA92 OT-23 OT-223	PDF
bel 188 transistor Abstract: SOT23 1128 of bel 188 transistor Text: MMBTA28 PZTA28 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 3SS NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 500 mA. Sourced from Process 03. Absolute Maximum Ratings* Symbol	Original	MPSA28 MMBTA28 PZTA28 MPSA28 MMBTA28 OT-23 OT-223 bel 188 transistor SOT23 1128 of bel 188 transistor	PDF
Untitled Abstract: No abstract text available Text: LMR12010 www.ti.com SNVS731A – SEPTEMBER 2011 – REVISED SEPTEMBER 2011 LMR12010 SIMPLE SWITCHER 20Vin, 1A Step-Down Voltage Regulator in SOT-23 Check for Samples: LMR12010 FEATURES 1 • • • • 23 • • • • • Input voltage range of 3V to 20V	Original	LMR12010 SNVS731A LMR12010 20Vin, OT-23 LMR12010X) LMR12010Y) OT23-6	PDF
CBVK741B019 Abstract: F63TNR MMBTA13 MPSA13 MPSA14 PN2222N PZTA13 Text: MMBTA13 PZTA13 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1M NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.	Original	MMBTA13 PZTA13 OT-23 OT-223 MPSA14 CBVK741B019 F63TNR MMBTA13 MPSA13 PN2222N PZTA13	PDF
pnp transistor bel 188 Abstract: AMPSA92 CBVK741B019 F63TNR MMBTA92 MPSA92 PN2222N PZTA92 tc 144 e SOT-23 2D Text: MMBTA92 PZTA92 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2D PNP High Voltage Amplifier This device is designed for high voltage driver applications. Sourced from Process 76. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Value Units	Original	MMBTA92 PZTA92 OT-23 OT-223 pnp transistor bel 188 AMPSA92 CBVK741B019 F63TNR MMBTA92 MPSA92 PN2222N PZTA92 tc 144 e SOT-23 2D	PDF
sot 223 fairchild Abstract: sot-23 15V vebo pnp CBVK741B019 F63TNR MMBTA92 MPSA92 PN2222N PZTA92 SOT-23 2D Fairchild MPSA92 Text: MMBTA92 PZTA92 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2D PNP High Voltage Amplifier This device is designed for high voltage driver applications. Sourced from Process 76. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter	Original	MMBTA92 PZTA92 OT-23 OT-223 sot 223 fairchild sot-23 15V vebo pnp CBVK741B019 F63TNR MMBTA92 MPSA92 PN2222N PZTA92 SOT-23 2D Fairchild MPSA92	PDF
Untitled Abstract: No abstract text available Text: RF2363 DUAL-BAND 3V LOW NOISE AMPLIFIER Package Style: SOT, 8-Lead Features Low Noise and High Intercept Point 18dB Gain at 900MHz 21dB Gain at 1900MHz Low Supply Current Single 2.5V to 5.0V Power Supply Very Small SOT-23-8 Plastic Package	Original	RF2363 900MHz 1900MHz OT-23-8 RF2363 950MHz GSM/1850MHz DS040114	PDF

SOT-23 187 Search Results

SOT-23 187 Result Highlights (5)

SOT-23 187 Datasheets Context Search

Untitled

Code sot-23 on semiconductor

R222 smd

4T SOT 23

SF7B

MMBD701

SOT23 JEDEC standard orientation

FAIRCHILD SOT-23 MARK 1a

Untitled

XC6203X332

marking P2 sot-23

499-P44-10

Wells-CTI

transistor bel 100

bel 188 transistor

Untitled

SF7B

Untitled

bel 188 transistor

Untitled

CBVK741B019

pnp transistor bel 188

sot 223 fairchild

Untitled