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    SOT-23 3A Search Results

    SOT-23 3A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    SOT-23 3A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SOT-23 PACKAGE REL MONITOR DATA High Temperature Storage Life +150 deg C, 1000 hours Device Lot No Pkg MSL Soak MIC5255 3.0YM5 6A23007M70 SOT-23-5 L1 MIC2514 YM5 247494M01 SOT-23-5 L1 MIC280 0YM6 CG68290MEA SOT-23-6 L1 MIC2005M 0.5YM6 5A26083MND SOT-23-6 n/a


    Original     		PDF OT-23 MIC5255 6A23007M70 OT-23-5 MIC2514 247494M01 MIC280 CG68290MEA OT-23-6

    sot-23 Marking 3D

    Abstract: BC856 sot-23 MARKING CODE 3d 3D marking sot23 3H SOT23 BC856B SOT23 BC856A BC856B BC857 BC858
    Text: PNP General Purpose Transistor: BC856/857/858 Features: tLow current max.100mA tLow voltage (max.65v) Applications: t SOT-23 Ordering Information Type No. Marking: Package Code: BC856A/B 3D/3A/3B SOT-23 BC857A/B/C 3H/3E/3F/3G SOT-23 BC858A/B/C 3J/3K/3L


    Original     		PDF BC856/857/858 100mA) OT-23 BC856A/B BC857A/B/C BC858A/B/C BC856 sot-23 Marking 3D BC856 sot-23 MARKING CODE 3d 3D marking sot23 3H SOT23 BC856B SOT23 BC856A BC856B BC857 BC858

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes CMPSH-3A SOT-23 SCHOTTKY BARRIER DIODE FEATURES  Fast Switching Speed  Low Forward Voltage  Small Plastic Package MARKING: DB1 MAXIMUM RATINGS Ta=25℃ unless otherwise noted


    Original     		PDF OT-23 OT-23 100mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETS NCE8205 N-Channel MOSFETS SOT-23-6L FEATURE Low on-resistance APPLICATIONS Li-ion battery management applications Maximum ratings Ta=25℃ unless otherwise noted Parameter


    Original     		PDF OT-23-6L NCE8205 OT-23-6L 250uA

    Untitled

    Abstract: No abstract text available
    Text: 君耀电子有限公司 Brightking Co.,Ltd w w w. b r i g h t k i n g . c o m UBT23A05L02 SOT-23 UAT52A05L02 SOT-523 Ultra-low capacitance TVS diode array for ESD protection UBT23A05L02 SOT-23 / UAT52A05L02 (SOT-523) with its small size, ultra-low capacitance and low clamping voltage, is


    Original     		PDF UBT23A05L02 OT-23 UAT52A05L02 OT-523 UBT23A05L02 OT-23) UAT52A05L02 OT-523) OT-23 OT-523

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Diode 1N5817-1N5819 SCHOTTKY BARRIER DIODE SOT-23-3L FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. 1. ANODE 3.CATHODE


    Original     		PDF OT-23-3L 1N5817-1N5819 OT-23-3L 1N5817: 1N5818 1N5819: 1N5817 1N5818 1N5819

    TRANSISTOR SMD MARKING CODE 3f

    Abstract: transistor smd marking code 3l SMD TRANSISTOR MARKING 3B 3F smd transistor TRANSISTOR SMD MARKING CODE 3K smd transistor 3f smd transistor 3g TRANSISTOR SMD MARKING CODE 3G smd transistor 3K transistor smd 3E
    Text: SMD General Purpose Transistor PNP BC856/BC857/BC858 SMD General Purpose Transistor (PNP) Features • PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications Mechanical Data SOT-23 SOT-23, Plastic Package Case: Solderable per MIL-STD-202G, Method 208


    Original     		PDF BC856/BC857/BC858 OT-23 OT-23, MIL-STD-202G, BC856A BC857A BC857B BC857C BC858A BC858B TRANSISTOR SMD MARKING CODE 3f transistor smd marking code 3l SMD TRANSISTOR MARKING 3B 3F smd transistor TRANSISTOR SMD MARKING CODE 3K smd transistor 3f smd transistor 3g TRANSISTOR SMD MARKING CODE 3G smd transistor 3K transistor smd 3E

    BC857

    Abstract: BC858 BC856 BC856B BC857 Plastic BC857C BC856A BC857A BC857B BC858A
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors BC856A,B TRANSISTOR BC857A, B,C BC858A, B,C PNP SOT-23 FEATURES y Ideally suited for automatic insertion y For Switching and AF Amplifier Applications 1. BASE 2. EMITTER


    Original     		PDF OT-23 BC856A BC857A, BC858A, OT-23 BC856 BC857 BC858 BC857 BC858 BC856 BC856B BC857 Plastic BC857C BC857A BC857B BC858A

    bc857

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors BC856A, B BC857A, B,C BC858A, B,C TRANSISTOR PNP SOT-23 FEATURES y Ideally suited for automatic insertion y For Switching and AF Amplifier Applications 1. BASE 2. EMITTER


    Original     		PDF OT-23 BC856A, BC857A, BC858A, OT-23 BC856 BC857 BC858 bc857

    Untitled

    Abstract: No abstract text available
    Text: SSS3402A N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) SOT-23 RDS(ON) (m ) Max D 60 @VGS = 10V 25V G 3A 80 @VGS = 4.5V S 170 @VGS = 2.5V D FEATURES Super high density cell design for low RDS(ON). Rugged and reliable. G SOT-23 package. S


    Original     		PDF SSS3402A OT-23 OT-23

    sot-23 P-Channel MOSFET

    Abstract: No abstract text available
    Text: SSS3401L P-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) SOT-23 RDS(ON) (mΩ) Max D 70 @VGS = -10V G -3A -30V 95 @VGS = -4.5V S 190 @VGS = -2.5V D FEATURES Super high density cell design for low RDS(ON). Rugged and reliable. G SOT-23 package.


    Original     		PDF SSS3401L OT-23 OT-23 sot-23 P-Channel MOSFET

    1N5819

    Abstract: 1N5817 1N5817 SJ diode 5819 5819 DIODE 1N5817 schottky diode symbol marking SJ 1N5819 sot-23 1N5817 diode sot-23 Marking sj
    Text: CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO.,LTD SOT-23-3L Plastic-Encapsulate Diode www.haorm.cn 1N5817, 1N5819 tel:86-769-87058050 SOT-23-3L SCHOTTKY DIODE FEATURES + 1. ANODE Power dissipation PD : 300 mW Ta=25℃ Collector current 1A IO : Collector-base voltage


    Original     		PDF OT-23-3L 1N5817, 1N5819 OT-23-3L 1N5817: 1N5819: 1N5817 1N5819 1N5817 1N5817 SJ diode 5819 5819 DIODE 1N5817 schottky diode symbol marking SJ 1N5819 sot-23 1N5817 diode sot-23 Marking sj

    diode 1N5819

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23-3L Plastic-Encapsulate Diode 1N5817, 1N5819 SOT-23-3L SCHOTTKY DIODE - 1. ANODE FEATURES 3.CATHODE + Power dissipation PD : 300 mW Ta=25℃ Collector current IF : 1 A Collector-base voltage VR : 1N5817:


    Original     		PDF OT-23-3L 1N5817, 1N5819 OT-23-3L 1N5817: 1N5819: 1N5817 diode 1N5819

    12v to 20v cuk converter

    Abstract: No abstract text available
    Text: LMR62421 LMR62421 SIMPLE SWITCHER 24Vout, 2.1A Step-Up Voltage Regulator in SOT-23 Literature Number: SNVS734A LMR62421 SIMPLE SWITCHER® 24Vout, 2.1A Step-Up Voltage Regulator in SOT-23 Features Performance Benefits • ■ ■ ■ ■ ■ ■ ■ ■


    Original     		PDF LMR62421 LMR62421 24Vout, OT-23 SNVS734A 12v to 20v cuk converter

    sot-23 Marking sj

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23-3L Plastic-Encapsulate Diode 1N5817, 1N5819 SOT-23-3L SCHOTTKY DIODE FEATURES + 1. ANODE Power dissipation PD : 300 mW Ta=25℃ Collector current IO : 1A Collector-base voltage VR : 1N5817: 20 V 1N5819: 40


    Original     		PDF OT-23-3L 1N5817, 1N5819 OT-23-3L 1N5817: 1N5819: 1N5817 sot-23 Marking sj

    DA5 diode

    Abstract: marking db2 sot23 marking db2 DA5 marking transistor D95 diode Da5 DA5 SOT23 marking 3a marking SOT23 V 4 diode da5 sot 23
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes CMPSH-3/3A/3C/3S SCHOTTKY DIODE SOT-23 FEATURES mW Tamb=25℃ 0. 95 0. 4 2. 9 0. 95 2. 4 1. 3 Forward Current 100 mA IF: Reverse Voltage 30 V VR: Operating and storage junction temperature range


    Original     		PDF OT-23 OT-23 100mA DA5 diode marking db2 sot23 marking db2 DA5 marking transistor D95 diode Da5 DA5 SOT23 marking 3a marking SOT23 V 4 diode da5 sot 23

    M2301A

    Abstract: APM2301A J-STD-020A 2301AA
    Text: APM2301A P-Channel Enhancement Mode MOSFET Features Pin Description D • -20V/-3A , RDS ON =72mΩ(typ.) @ VGS=-4.5V RDS(ON)=98mΩ(typ.) @ VGS=-2.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • • Reliable and Rugged SOT-23 Package G Top View of SOT-23


    Original     		PDF APM2301A -20V/-3A OT-23 OT-23 M2301A APM2301A J-STD-020A 2301AA

    Untitled

    Abstract: No abstract text available
    Text: MMBT3904E NPN General Purpose Transistor 3 1 The MMBT3904E device is a spin-off of our popular SOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-1123 surface mount package.


    Original     		PDF MMBT3904E MMBT3904E OT-23/SOT-323/SOT-563/SOT-963 OT-1123 OT-1123 3-Aug-2012

    APM2307

    Abstract: J-STD-020A mosfet APM2307 DIODE marking A.3 sot-23 MARKING CODE GS 5
    Text: APM2307 P-Channel Enhancement Mode MOSFET Features Pin Description D • -30V/-3A , RDS ON =100mΩ(typ.) @ VGS=-10V RDS(ON)=140mΩ(typ.) @ VGS=-4.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • • Reliable and Rugged SOT-23 Package G Top View of SOT-23


    Original     		PDF APM2307 -30V/-3A OT-23 OT-23 APM2307 J-STD-020A mosfet APM2307 DIODE marking A.3 sot-23 MARKING CODE GS 5

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJ2305K P-Channel 12-V D-S MOSFET SOT-23-3L FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter


    Original     		PDF OT-23-3L CJ2305K OT-23-3L

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2301S P-Channel 20-V D-S MOSFET SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S1


    Original     		PDF OT-23 CJ2301S OT-23

    1N4937 SMD

    Abstract: diode 1n4007 melf smd 2n5401 smd 1n4001 melf diode 1n4007 melf 2n2222a SOT223 1N4148 SOD-80 2n2222a SOT23 1N5819 SOD80 2N2369 SOT-23
    Text: Leaded to Surface Mount Equivalents LEADED SMD CASE COMMENTS 1N 914 CMPD 914 CLL914 CMPD28:i6 CMPD28IÌ8 CMPD7000 BAS28 SOT-23 SOD-80 SOT-23 SOT-23 SOT-23 SOT-143 Single Switching Diode Leadless Switching Diode Dual, Common Anode Dual, Common Cathode Dual, In Series


    OCR Scan     		PDF CLL914 CMPD28 CMPD28I CMPD7000 BAS28 CMPD4448 CLL4448 CMPD41 CLL4150 BAS56 1N4937 SMD diode 1n4007 melf smd 2n5401 smd 1n4001 melf diode 1n4007 melf 2n2222a SOT223 1N4148 SOD-80 2n2222a SOT23 1N5819 SOD80 2N2369 SOT-23

    MMBD501

    Abstract: MMBV2098 MBAV99 A5 sot-23 single DIODE MMBV105G MMBV2097 A5 sot-23 DIODE MMBD2837 MBAS16 MBAV70
    Text: SURFACE MOUNT PRODUCTS — SOT-23 continued SOT-23 Switching Diodes (Dual Unless Otherwise Noted) Diode Pinout: Noted Below Device Marking MMBD2836 MBAW56 MMBD2835 MBAV74 MMBD2838 MBAV70 MMBD2837 MMBD6100 MMBD914 MBAS16 MBAL99 MMBD6050 MBAV99 MMBD7000 A2


    OCR Scan     		PDF OT-23 OT-23 MMBD2836 MBAW56 MMBD2835 MBAV74 MMBD2838 MBAV70 MMBD2837 MMBD6100 MMBD501 MMBV2098 MBAV99 A5 sot-23 single DIODE MMBV105G MMBV2097 A5 sot-23 DIODE MBAS16

    Untitled

    Abstract: No abstract text available
    Text: 5YM5EMI SEMICONDUCTOR SOT -23 Plastic Encapsulate Transistors BC 856ALT1, B LT1 TRANSISTOR BC8 57ALT1 , BLT1 CLT1 BC8 58ALT1 , BLT1 CLT1 PNP SOT — 23 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation PCM : 0.2 W (Tamb=25 °C) Collector current


    OCR Scan     		PDF 856ALT1, 57ALT1 58ALT1 BC856 BC857 BC858 BC858 BC856 100MHz -10mA