C945
Abstract: BR c945 transistor transistor npn c945 c945 transistor position of emitter of c945 NPN C945 C945 NPN transistor c945 C945 plastic C945 IC
Text: C945 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM : 0.2 * Collector current ICM : 0.15 * Collector-base voltage V(BR)CBO : 60 * Operating and storage junction TJ,Tstg: -55OC to +150OC W (Tamb=25OC) A V temperature range SOT-23
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OT-23
-55OC
150OC
OT-23
MIL-STD-202E
C945
BR c945 transistor
transistor npn c945
c945 transistor
position of emitter of c945
NPN C945
C945 NPN
transistor c945
C945 plastic
C945 IC
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125OC
Abstract: MMBT3904
Text: MMBT3904 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM 0.2 W(Tamb=25OC) * Collector current ICM 0.2 A * Collector-base voltage V(BR)CBO: 60 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC SOT-23 COLLECTOR
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MMBT3904
OT-23
-55OCto
150OC
OT-23
MIL-STD-202E
125OC
MMBT3904
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PDF
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Untitled
Abstract: No abstract text available
Text: MMBT4403 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation O PCM: 0.3 W(Tamb=25 C) * Collector current ICM: - 0.6 A * Collector-base voltage V(BR)CBO: - 40 V * Operating and storage junction temperature range TJ,Tstg: -55OC to+150OC SOT-23
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MMBT4403
OT-23
-55OC
150OC
OT-23
MIL-STD-202E
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PDF
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MMBT4401
Abstract: No abstract text available
Text: MMBT4401 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation O PCM: 0.3 W(Tamb=25 C) * Collector current ICM: 0.6 A * Collector-base voltage V(BR)CBO: 60 V * Operating and storage junction temperature range TJ,Tstg: -55OC to+150OC SOT-23
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MMBT4401
OT-23
-55OC
150OC
OT-23
MIL-STD-202E
MMBT4401
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC1623 1. BASE TRANSISTOR NPN 2. EMITTER 3. COLLECTOR mW (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 100 mA ICM: Collector-base voltage 60 V V(BR)CBO:
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OT-23
OT-23
2SC1623
100mA,
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AZY TRANSISTOR
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 KTA1505 1. BASE TRANSISTOR PNP 2. EMITTER 3. COLLECTOR mW (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current -0.5 A ICM: Collector-base voltage -35 V V(BR)CBO:
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OT-23
OT-23
KTA1505
-100mA
-400mA
-100mA,
-10mA
-20mA
AZY TRANSISTOR
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tp0610t
Abstract: tp0610 part marking for tp0610t
Text: HtSæ Si, TP0610 SERIES P-Channel Enhancement-Mode MOS Transistors BOTTOM VIEW TO-92 TO-226AA PRODUCT SUMMARY "W" •d (A) PACKAGE -60 10 -0.18 TO-92 -60 10 -0.12 SOT-23 PART NUMBER V (BR)DSS TP0610L TP0610T 1 SOURCE 2 GATE 3 DRAIN TOP VIEW SOT-23 Performance Curves: VPDS06
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OCR Scan
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TP0610
O-226AA)
TP0610L
TP0610T
OT-23
VPDS06
TP0610T
part marking for tp0610t
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PDF
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MMBT3960
Abstract: MMBT3960A MMBT4260 MMBT6543 MMBT4261 3D MARKING SOT-23 sot-23 Marking 3D 3D marking sot23 MMBC1009F1 MMBC1321Q2
Text: SURFACE MOUNT PRODUCTS — SOT 23 continued SOT-23 Transistors, VHF/UHF Amplifiers, Mixers, Oscillators P inout: 1-Base, 2 -E m itte r, 3 -C o lle c to r NPN 'T Device c ob Max (pF) Marking Min (GHz @ 'c (mA) v BR(CEO) 1T 15 3F 3E Q2 Q3 Q4 Q5 3B 3A F1 F2
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OCR Scan
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OT-23
MMBT3960A
MMBT3960
MMBT6543
MMBTH10
MMBC1321Q2
MMBC1321Q3
MMBC1321Q4
MMBC1321Q5
MMBT918
MMBT4260
MMBT4261
3D MARKING SOT-23
sot-23 Marking 3D
3D marking sot23
MMBC1009F1
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PDF
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C1815L
Abstract: AV1815LT1 C1815LT1 AV1815
Text: @vic AV1815LT1 SOT-23 Plastic-Encapsulate Transistors AV1815LT1 SOT—23 TRANSISTOR（ NPN ） 1. BASE 2. EMITTER FEATURES 3. COLLECTOR １．０ Power dissipation PCM : 0.2 W（Tamb=25℃） Collector current ICM: 0.15 A Collector-base voltage V BR CBO : 60
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AV1815LT1
OT-23
OT--23
037TPY
950TPY
550REF
022REF
C1815L
AV1815LT1
C1815LT1
AV1815
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PDF
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PT3904
Abstract: No abstract text available
Text: SOT-23/TO-236AB ELECTRICAL CHARACTERISTICS at T . = 25°C V BR CBO V (BR)CEO V(BR)EBO Max. @ vCB Device Type M arking (V) (V) (V) VCE(sat) DC C urrent Gain ^CBO h FE t>FE @ lc @ VCE Max. @ lc (nA) (V) Min. Max. (mA) (V) (V) (mA) 't Min. @ lc (MHz) (mA) ts'
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OCR Scan
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OT-23/TO-236AB
PT2222A
PT3904
TMPT4401
PT5089
PT6427
PTA06
PTA42
050H33Ã
PT3904
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 2SC5344 1. BASE TRANSISTOR NPN 2. EMITTER 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.8 A ICM: Collector-base voltage V V(BR)CBO: 35
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OT-23
2SC5344
100mA
500mA,
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PDF
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SBSS84LT1G
Abstract: SBSS84LT1
Text: BSS84LT1, SBSS84LT1 Power MOSFET Single P-Channel SOT-23 -50 V, 10 W • SOT−23 Surface Mount Package Saves Board Space • AEC Q101 Qualified − SBSS84LT1 • These Devices are Pb−Free and are RoHS Compliant http://onsemi.com V BR DSS RDS(ON) MAX −50 V
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BSS84LT1,
SBSS84LT1
OT-23
SBSS84LT1
BSS84LT1/D
SBSS84LT1G
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PDF
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2SA812
Abstract: marking M4
Text: RECTRON 2SA812 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 0.2 * Collector current ICM : -0.1 * Collector-base voltage V(BR)CBO : -60 * Operating and storage junction TJ,Tstg: -55OC to +150OC
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2SA812
OT-23
-55OC
150OC
OT-23
MIL-STD-202E
2SA812
marking M4
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PDF
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2SD596
Abstract: No abstract text available
Text: RECTRON 2SD596 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 0.2 W (Tamb=25OC) * Collector current ICM : 0.7 A * Collector-base voltage V(BR)CBO : 30 V * Operating and storage junction temperature range
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Original
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2SD596
OT-23
OT-23
MIL-STD-202E
2SD596
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PDF
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Untitled
Abstract: No abstract text available
Text: MMBT5401 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation O PCM: 0.3 W(Tamb=25 C) * Collector current ICM: - 0.6 A * Collector-base voltage V(BR)CBO: - 160 V * Operating and storage junction temperature range TJ,Tstg: -55OC to+150OC
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MMBT5401
OT-23
-55OC
150OC
OT-23
MIL-STD-202E
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PDF
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c1815 SOT-23
Abstract: transistor c1815 data C1815 transistor c1815 sheet C1815 data 30MHZ C1815 NPN Transistor data transistor C1815 transistor c1815 c1815 hf
Text: C1815 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM : 0.2 W (Tamb=25OC) * Collector current ICM : 0.15 mA * Collector-base voltage V(BR)CBO : 60 V * Operating and storage junction temperature range O O TJ,Tstg: -55 C to +150 C
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C1815
OT-23
OT-23
MIL-STD-202E
c1815 SOT-23
transistor c1815 data
C1815
transistor c1815 sheet
C1815 data
30MHZ
C1815 NPN Transistor
data transistor C1815
transistor c1815
c1815 hf
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PDF
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Untitled
Abstract: No abstract text available
Text: : Sv m Se m i ; 5YM 5EMI SEM ICONDUCTOR SOT -23 Plastic Encapsulate Transistors TRANSISTOR BCW30LT1 PNP FEATURES Power dissipation PCM : 0.225 W (Tamb=25 °C) Collector current Icm : -0.1 Collector base voltage A V (br)cbo : ~32 V Operating and storage junction temperature range
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OCR Scan
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BCW30LT1
OT-23
950TPY
550REF
037TPY
022REF
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PDF
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Untitled
Abstract: No abstract text available
Text: : S v m Se m i : SOT -23 Plastic Encapsulate Transistors 5YM5EMI SEMICONDUCTOR MMBT4403LT1 TRANSISTOR PNP FEATURES Power dissipation PCM : 0.3 W (Tainb=25 °C) Collector current Icm : -0.6 A Collector base voltage V (br)cbo :“ 40 V Operating and storage junction temperature range
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OCR Scan
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MMBT4403LT1
OT-23
950TPY
037TPY
550REF
022REF
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PDF
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transistor WT3
Abstract: No abstract text available
Text: Product specification WNM3003 N-Channel, 30V, 4.0A, Power MOSFET V BR DSS Rds(on) () 0.033@ 10V 30V 0.033@ 10V 0.043 @ 4.5V SOT-23 D Descriptions 3 The WNM3003 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS
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WNM3003
OT-23
WNM3003
transistor WT3
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NIKO-SEM
Abstract: PA502FM sot23 CODE 02 sm 17 35 tc p-Channel Logic Level Enhancement Mode sot-23 20YWW TRANSISTOR SOT-23
Text: P-Channel Logic Level Enhancement NIKO-SEM PA502FM Mode Field Effect Transistor SOT-23 D PRODUCT SUMMARY V BR DSS RDS(ON) ID -20 150mΩ -3A 1 :GATE 2 :DRAIN 3 :SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS
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Original
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PA502FM
OT-23
AUG-17-2004
NIKO-SEM
PA502FM
sot23 CODE 02
sm 17 35 tc
p-Channel Logic Level Enhancement Mode sot-23
20YWW
TRANSISTOR SOT-23
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PDF
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TMPFJ175
Abstract: No abstract text available
Text: ALLEGRO MICROSYSTEMS INC blE » • D5Di|33ü GOObBTb flTB ■ AL6R P-CHANNEL JFETs SOT-23/TO-236AB ELECTRICAL CHARACTERISTICS a t TA = 25°C V V BR OSS Min. @ 'q Max. (V) (HA) TMPF3820 TMPF3993 TMPF3994 TMPF4381 TMPF5460 20 25 25 25 40 TMPF5461 TMPF5462
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OCR Scan
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OT-23/TO-236AB
TMPF3820
TMPF3993
TMPF3994
TMPF4381
TMPF5460
TMPF5461
TMPF5462
TMPFJ174
TMPFJ175
TMPFJ175
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PDF
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Untitled
Abstract: No abstract text available
Text: C1815LT1 C1815LT1 SOT-23 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25 ) 2. 4 1. 3 0. 4 0. 95 TJ, Tstg: -55 2. 9 Collector current ICM: 0.15 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range to +150
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Original
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C1815LT1
OT-23
30MHz
C1815LT1
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PDF
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Untitled
Abstract: No abstract text available
Text: A1015LT1 A1015LT1 TRANSISTOR PNP SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR W (Tamb=25 ) 2. 4 1. 3 0. 4 0. 95 TJ, Tstg: -55 2. 9 Collector current ICM: -0.15 A Collector-base voltage -50 V V(BR)CBO: Operating and storage junction temperature range to +150
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Original
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A1015LT1
OT-23
-10mA
30MHz
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PDF
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VP0610T
Abstract: vp0610t marking
Text: VP0610 SERIES P-Channel Enhancement-Mode MOS Transistors J 7 IS 3 & TO-92 TO-226AA BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V(BR)DSS (V) r DS(ON) ( fl) (A) PACKAGE VP0610L -6 0 10 -0.18 TO-92 VP0610T -6 0 10 -0.1 2 SOT-23 Performance Curves: •d 1 SOURCE
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OCR Scan
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VP0610
O-226AA)
VP0610L
VP0610T
OT-23
VPDS06
Temp10
vp0610t marking
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PDF
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