sot-23 IY
Abstract: KTA1298 IY TRANSISTOR MARKING IY SOT
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 KTA1298 TRANSISTOR PNP 1. BASE 2. EMITTER FEATURES z Low frequency power amplifier application z Power switching application 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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OT-23
OT-23
KTA1298
-100mA
-800mA
-10mA,
-10mA
-500mA,
-20mA
sot-23 IY
KTA1298
IY TRANSISTOR
MARKING IY SOT
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 KTA1298 TRANSISTOR PNP 1. BASE 2. EMITTER FEATURES z Low frequency power amplifier application z Power switching application 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-23
OT-23
KTA1298
-100mA
-800mA
-10mA
-10mA,
-500mA,
-20mA
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Untitled
Abstract: No abstract text available
Text: KTA1298 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Low frequency power amplifier application Power switching application MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC* TJ Parameter Collector-Base Voltage
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KTA1298
OT-23
OT-23
-800mA
-500mA,
-20mA
-10mA
-10mA,
-100mA
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SA1298 TRANSISTOR PNP SOT–23 FEATURES Low Frequency Power Amplifier Application Power Swithing Applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-23
2SA1298
-100mA
-800mA
-500mA,
-20mA
-10mA,
-10mA
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431ai
Abstract: 431bi 5 amp possitive regulator ic 431BI 8 PIN 27BSC TS431AI TS431BI TS431I
Text: TS431I Adjustable Precision Shunt Regulator TO-92 SOT-89 Pin Definition: 1. Reference 2. Anode 3. Cathode SOT-23 Pin Definition: 1. Reference 2. Cathode 3. Anode SOP-8 Pin Definition: 1. Cathode 8. Reference 2. Anode 7. Anode 3. Anode 6. Anode 4. N/C 5. N/C
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TS431I
OT-89
OT-23
TS431I/431AI/431BI
100mA
431ai
431bi
5 amp possitive regulator ic
431BI 8 PIN
27BSC
TS431AI
TS431BI
TS431I
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2SA1298Y
Abstract: SOT-23-hg 2SA1298 2SA1298-O 2SA1298-Y MARKING IY SOT
Text: 2SA1298 -0.8A , -35V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES Low Frequency Power Amplifier Application Power Switching Applications
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2SA1298
OT-23
2SA1298-O
2SA1298-Y
-100mA
-800mA
-500mA,
-20mA
-10mA
2SA1298Y
SOT-23-hg
2SA1298
2SA1298-O
2SA1298-Y
MARKING IY SOT
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KTA1298
Abstract: MARKING IY SOT sot-23 IY marking IY
Text: SEMICONDUCTOR KTA1298 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking IY No. 1 Item Marking Device Mark I KTA1298 hFE Grade Y O,Y * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method
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KTA1298
OT-23
KTA1298
MARKING IY SOT
sot-23 IY
marking IY
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MARKING IY SOT
Abstract: No abstract text available
Text: WTA8921 PNP Silicon Transistors COLLECTOR * “G” Lead Pb -Free 3 1 BASE 2 SOT-23 EMITTER MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -Continuous Symbol VCEO VCBO VEBO IC Value
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WTA8921
OT-23
WTA8921
-20mAdc)
-10Vdc,
-10mAdc,
30MHz)
OT-23
MARKING IY SOT
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Untitled
Abstract: No abstract text available
Text: KTA1298 PNP Silicon Transistors COLLECTOR 3 * “G” Lead Pb -Free 1 BASE 2 SOT-23 EMITTER MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -Continuous Symbol VCEO VCBO VEBO IC Value
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KTA1298
OT-23
KTA1298
-20mAdc)
-10Vdc,
-10mAdc,
30MHz)
OT-23
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KTA1298
Abstract: sot-23 IY
Text: KTA1298 PNP Silicon Transistors COLLECTOR 3 1 BASE 2 SOT-23 EMITTER MAXIMUM RATINGS Ta=25 C Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -Continuous Symbol VCEO VCBO VEBO IC Value -30 -35 -5.0 -800 Unit Vdc
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KTA1298
OT-23
KTA1298
-20mAdc)
-10Vdc,
-10mAdc,
30MHz)
OT-23
sot-23 IY
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors KTA1298 SOT_23 TRANSISTOR PNP 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current -0.8 A ICM: Collector-base voltage
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OT-23
KTA1298
-100mA
-800mA
-20mA
-10mA
-10mA,
30MHz
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Q62702-F979
Abstract: BF599
Text: NPN Silicon RF Transistor ● Common emitter IF/RF amplifier ● Low feedback capacitance due to shield diffusion BF 599 Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) BF 599 NB Q62702-F979 B SOT-23 E C Maximum Ratings Parameter
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Q62702-F979
OT-23
Iy21e
Q62702-F979
BF599
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transistor smd IY
Abstract: No abstract text available
Text: Diodes IC Transistors Transistor T SMD Type Product specification KTA1298 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features 0.4 3 1 0.55 ● Collector Current: IC=-800mA +0.1 1.3-0.1 +0.1 2.4-0.1 ● Collector Power Dissipation: PC=200mW 2 +0.1 0.95-0.1
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KTA1298
OT-23
-800mA
200mW
-10mA
-100mA
-500mA,
-20mA
-10mA
transistor smd IY
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Untitled
Abstract: No abstract text available
Text: Transistors SMD Type PNP Silicon Transistors KTA1298 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features 0.4 3 1 0.55 ● Collector Current: IC=-800mA +0.1 1.3-0.1 +0.1 2.4-0.1 ● Collector Power Dissipation: PC=200mW 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1
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KTA1298
OT-23
-800mA
200mW
-10mA
-100mA
-500mA,
-20mA
-10mA
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marking VB SOT-23
Abstract: SMP1302-079 P1307
Text: GaAs RF ICs and Modules PIN Diodes Attenuator PIN Diodes a / y il Iy y y H A y t * * h œ a B Common Cathode SOT-23 Series Pair SOT-23 ♦ SMP1302-003 ♦ SMP1302-004 ♦ 1 SMP1302-005 PF9 PF3 PF2 SC-70 SC-70 SC-70 ♦ SMP1302-073 ♦ SMP1302-074 PF9 PF3 ♦ 1SMP1302-075
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OT-23
SMP1302-004
OD-323
SMP1302-001
SMP1302-003
SMP1302-005
marking VB SOT-23
SMP1302-079
P1307
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ltkh
Abstract: marking LTIZ LGH3C100K24 LTIZ LT1615-1 LTIZ SOT A47 SOT23 R 4R7 inductor SOf-23 LMK316BJ475
Text: u im LT1615/LT1615-1 TECHNOLOGY M ic ro p o w e r Step-Up D C /D C C onverters in SOT-23 FEATURES DE9CRIFT10n • Low Q iescent Cirrent: 20|aAin Active Mode <1 oAin Shutdown Mode ■ Operates with V|N as Low as 1V ■ Low Vcesat Switch: 250mV at 300mA ■ Tiny 5-Lead SOT-23 Package
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lt1615/lt1615-1
OT-23
250mV
300mA
OT-23
DE9CRIFT10n
LT1615
a350mA
LT1615-1
ltkh
marking LTIZ
LGH3C100K24
LTIZ
LTIZ SOT
A47 SOT23
R 4R7 inductor
SOf-23
LMK316BJ475
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transistor npn c 6073
Abstract: 433 SOT-23 transistor npn d 2078 944 1L2 NE68139
Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fx= 8 GHz • LOW NOISE FIGURE: 1,2dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB AT 2 GHz 00 CHIP 35 (MICRO-X) 33 (SOT 23 STYLE) 39 (SOT 143 STYLE)
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NE681
OT-23)
transistor npn c 6073
433 SOT-23
transistor npn d 2078
944 1L2
NE68139
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Untitled
Abstract: No abstract text available
Text: FJ596S SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD. TECHNICAL DATA SI N-CHANNEL JUNCTION FEl CAPACITOR MICROPHONE APPLICATIONS Package; SOT-23 * Especially Suited For Use In Audio telephone Capacitor Microphones * Excellent Voltage Characteristic * Excellent Transient Characteristic
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FJ596S
OT-23
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175417
Abstract: No abstract text available
Text: National Semiconductor LM45B/LM45C SOT-23 Precision Centigrade Temperature Sensors • Portable Medical Instruments ■ HVAC General Description The LM45 series are precision integrated-circuit tempera ture sensors, whose output voltage is linearly proportional to
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LM45B/LM45C
LM45B/LM45C
OT-23
175417
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marking B3A sot23-5
Abstract: No abstract text available
Text: BC856S SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS L ID . TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR Package: SOT-23 ♦Com plem ent to BC846S ABSOLUTE MAXIMUM RATINGS a t Tflmb=1is r c _ C haracteristic Symbol Rating
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BC856S
OT-23
BC846S
-10mA
-10uA
-100mA
marking B3A sot23-5
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TRANSISTORE
Abstract: BFS18 BFS19 Q62702 Q62702-F349
Text: BFS 18 BFS 19 N P N - T r a n s i s t o r e n - H F BFS 18 und BFS 19 sind epitaktische NPN-Silizium-Planar-Transistoren im Gehäuse 23 A3 DIN 41 869 SOT-23 . Die Transistoren wurden speziell für HIF-Schaltungen in Dick- und Dünnfilmtechnik geschaffen. Zur Kennzeichnung des Typs wejrden die Transistoren folgender
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BFS18
BFS18
OT-23)
Q62702â
Q62702-F349
0AH03
BFS19
TRANSISTORE
BFS19
Q62702
Q62702-F349
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transistor 13003 AD
Abstract: ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v
Text: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition V ceo lc Vce h FE Condition (c le Vce(sat},VBE(sat)(v) Condition fiÌMHz) (V) (A) (V) !c (mA) (mA)
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OT-23
KST06
KST05
KSC1623
BCW71
BCX70G
BCX70H
BCX70J
BCX70K
BCX71G
transistor 13003 AD
ksd-180
HF 13003
KSD180
13003 HF
KSD168
KSD966
ksd-168
PNP NPN Transistor VCEO 120V 100V Ic 7A
KSC 1.5k 250v
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Untitled
Abstract: No abstract text available
Text: 8550S SEM ICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS L ID . TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER Package: SOT-23 * Complement to 8050S * Collector Current: Ic=-500mA * Collector D issipation: Pc=225mW Ta=25°C ABSOLUTE M AXIMUM R ATINGS a t Tan*-2$ C
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8550S
OT-23
8050S
-500mA
225mW
300uS,
-100uA
-50mA
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RTO BH
Abstract: NPN BH RE IY 925 TRANSISTOR transistor marking bh ra transistors 368 & 369
Text: Die no. D-15 NPN medium power transistor Dimensions Units : mm These are epitaxial planar NPN silicon transistors. SST3 Features 2.9 available in a SST3 (SST, SOT-23) package, see page 300 ± 0.2 1 . 9 * 0.2 collector-to-emitter breakdown voltage, BVCE0 = 45 V (min) at
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OT-23)
RTO BH
NPN BH RE
IY 925 TRANSISTOR
transistor marking bh ra
transistors 368 & 369
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