SD965
Abstract: J13003 sd965 transistor j13003 TRANSISTOR BC846 SOT-23 EBC J31C Transistor J31C J127 mosfet J42C SC4242
Text: Mini size of Discrete semiconductor elements Diode Rectifier Schottky SOD-723 / SOD-523 / SOD-323 TO-252 / TO263 SOT-23-6 / TSSOP-8 / SOP-8 mini-MELF / MELF SMA / SMB / SMC Switching SOT-523 / SOT-323 / SOT-23 Bridge Single phase / Three phase RF ( low capacitance ) & Varactor
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OD-723
OD-523
OD-323
O-252
OT-23-6
OT-523
OT-323
OT-23
OT-323
SD965
J13003
sd965 transistor
j13003 TRANSISTOR
BC846 SOT-23 EBC
J31C Transistor
J31C
J127 mosfet
J42C
SC4242
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S9015 SOT-23
Abstract: m6 marking transistor sot-23 marking M6 S9015 s9015 transistor s9015 SOT23 transistor transistor S9014 s9014 equivalent S9015 M6 transistor SOT23 S9015
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9015 SOT-23 TRANSISTOR PNP FEATURES Complementary to S9014 1. BASE z 2. EMITTER 3. COLLECTOR MARKING: M6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter
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OT-23
S9015
OT-23
S9014
-100A,
-100mA,
-10mA
S9015 SOT-23
m6 marking transistor sot-23
marking M6
S9015
s9015 transistor
s9015 SOT23 transistor
transistor S9014
s9014 equivalent
S9015 M6
transistor SOT23 S9015
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9015 SOT-23 TRANSISTOR PNP FEATURES Complementary to S9014 1. BASE z 2. EMITTER 3. COLLECTOR MARKING: M6 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter
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OT-23
S9015
OT-23
S9014
-100mA,
-10mA
30MHz
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S9015
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9015 SOT-23 TRANSISTOR PNP FEATURES Complementary to S9014 1. BASE z 2. EMITTER 3. COLLECTOR MARKING: M6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter
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OT-23
S9015
OT-23
S9014
-100mA,
-10mA
30MHz
S9015
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m6 marking transistor sot-23
Abstract: sot-23 Marking M6 S9015 SOT-23 s9015 SOT23 transistor s9015 transistor s9015 S9015 M6 marking M6 S9014 SOT-23 transistor SOT23 m6
Text: S9015 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to S9014 MARKING: M6 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage
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S9015
OT-23
OT-23
S9014
-100A,
-100mA,
-10mA
m6 marking transistor sot-23
sot-23 Marking M6
S9015 SOT-23
s9015 SOT23 transistor
s9015 transistor
s9015
S9015 M6
marking M6
S9014 SOT-23
transistor SOT23 m6
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Untitled
Abstract: No abstract text available
Text: SOT-23 Plastic-Encapsulate Transistors S9015LT1 TRANSISTOR PNP SOT-23 FEATURES 1. BASE 2. EMITTER Power dissipation 1. 0 W (Tamb=25℃) Collector current -0.1 A ICM: Collector-base voltage -50 V V(BR)CBO: Operating and storage junction temperature range
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OT-23
S9015LT1
OT-23
-100mA,
-10mA
30MHz
S9015LT1
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9015LT1 TRANSISTOR PNP SOT-23 FEATURES 1. BASE 2. EMITTER Power dissipation 1. 0 W (Tamb=25℃) Collector current -0.1 A ICM: Collector-base voltage -50 V V(BR)CBO:
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OT-23
S9015LT1
OT-23
-100mA,
-10mA
30MHz
S9015LT1
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sot-23 Marking M6
Abstract: "device marking" "device marking" M6 m6 marking transistor sot-23 AV9015LT1 S9015LT1
Text: @vic SOT-23 Plastic-Encapsulate Transistors AV9015LT1 TRANSISTOR PNP SOT-23 FEATURES 1. BASE 2. EMITTER Power dissipation 1. 0 W (Tamb=25℃) Collector current ICM: -0.1 A Collector-base voltage -50 V V(BR)CBO: Operating and storage junction temperature range
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OT-23
AV9015LT1
OT-23
-100mA,
-10mA
30MHz
S9015LT1
sot-23 Marking M6
"device marking"
"device marking" M6
m6 marking transistor sot-23
AV9015LT1
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m6 marking transistor sot-23
Abstract: 2SA812 2SC1623 hFE-200 marking m5 m5 marking transistor sot-23
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SA812 SOT-23 TRANSISTOR PNP Unit : mm 1. BASE FEATURES z Complementary to 2SC1623 z High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) z High Voltage: Vceo=-50V 2. EMITTER
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OT-23
2SA812
OT-23
2SC1623
-100A,
-100mA,
-10mA
m6 marking transistor sot-23
2SA812
2SC1623
hFE-200
marking m5
m5 marking transistor sot-23
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SA812 SOT-23 TRANSISTOR PNP Unit : mm 1. BASE FEATURES z Complementary to 2SC1623 z High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) z High Voltage: Vceo=-50V 2. EMITTER
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OT-23
2SA812
OT-23
2SC1623
-100mA,
-10mA
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m6 marking transistor sot-23
Abstract: transistor SOT23 m6 hFE-200 transistor PNP marking M6 transistor M5 SOT23 2sa812
Text: 2SA812 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to 2SC1623 High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) High Voltage: Vceo=-50V MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value
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2SA812
OT-23
OT-23
2SC1623
-100A,
-100mA,
-10mA
-10mA
m6 marking transistor sot-23
transistor SOT23 m6
hFE-200 transistor PNP
marking M6 transistor
M5 SOT23
2sa812
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marking of m7 diodes
Abstract: 2SA812
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SA812 SOT-23-3L TRANSISTOR PNP 1. BASE 2. EMITTER 3. COLLECTOR FEATURES W (Tamb=25℃) 1. 60¡ À0. 05 0. 35 1. 9 Collector current A ICM : -0.1 Collector-base voltage
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OT-23-3L
2SA812
OT-23-3L
-10mA
marking of m7 diodes
2SA812
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SA812 1. BASE TRANSISTOR PNP 2. EMITTER 3. COLLECTOR 1. 0 FEATURES Power dissipation 2. 4 1. 3 W (Tamb=25℃) 0. 95 0. 4 2. 9 Collector current A ICM : -0.1
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OT-23
OT-23
2SA812
-10mA
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2SA812
Abstract: No abstract text available
Text: Transys Electronics L I M I T E D SOT-23-3L Plastic-Encapsulated Transistors 2SA812 SOT-23-3L TRANSISTOR PNP 1. BASE 2. EMITTER 3. COLLECTOR FEATURES W (Tamb=25℃) 1. 60¡ À0. 05 0. 35 1. 9 Collector current A ICM : -0.1 Collector-base voltage V V(BR)CBO : -60
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OT-23-3L
2SA812
OT-23-3L
-10mA
2SA812
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MC4044P
Abstract: 7660CPA MC14411P 8038ccpd RC4151N ultrasonic proximity detector LM35CZ ICL7660SCPA 344C mc145151p
Text: Linear, Sensors & Digital Pots TO-5/TO-52 TO-92 TO-220 TO-252 TO-263 DD DIP Call us to see if you can save 10-20%. SOIC & SOP SOT-23 SOT-223 Manufacturer Cross Reference Table Manufacturer Analog Devices Anachip Code Manufacturer Code Manufacturer ADI Fairchild Semiconductor FSC Maxim Corporation
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O-5/TO-52
O-220
O-252
O-263
OT-23
OT-223
302252CB
302228CB
25275CB
29372CB
MC4044P
7660CPA
MC14411P
8038ccpd
RC4151N
ultrasonic proximity detector
LM35CZ
ICL7660SCPA
344C
mc145151p
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24v to 12v converter CIRCUIT DIAGRAM
Abstract: M62270GP M62271GP M62272GP M62273GP M62274GP M62275GP M62276GP M6227XGP PWM IC 5PIN
Text: MITSUBISHI <Standard Linear IC> M6227XGP 5-PIN SOT-23 3V SYSTEM FIXED OUTPUT VOLTAGE DC-DC CONVERTER DESCRIPTION M6227XGP is an integrated circuit designed as fixed output voltage general purpose DC-DC converter. Integrating peripheral components in ultrasmall 5-pin SOT23 package
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M6227XGP
OT-23
M6227XGP
500uA
OT-23)
110KHz
150mV
24v to 12v converter CIRCUIT DIAGRAM
M62270GP
M62271GP
M62272GP
M62273GP
M62274GP
M62275GP
M62276GP
PWM IC 5PIN
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PWM IC 5PIN
Abstract: 5 pin transistor for 12v 3 amp M62270GP M62291 M62291GP 120KHz* 5P2X-A SOT-23 amp sot-23 5pin DC-DC SOT23
Text: MITSUBISHI <Standard Linear IC> M62291GP 5-PIN SOT-23 5.0V SYSTEM FIXED OUTPUT VOLTAGE DC-DC CONVERTER DESCRIPTION M62291GP is an integrated circuit designed as 5V fixed output voltage general purpose DC-DC converter. Integrating peripheral components in ultrasmall 5-pin SOT23 package
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M62291GP
OT-23
M62291GP
570uA
110KHz
150mV
PWM IC 5PIN
5 pin transistor for 12v 3 amp
M62270GP
M62291
120KHz* 5P2X-A SOT-23
amp sot-23 5pin
DC-DC SOT23
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2SA812
Abstract: marking M4
Text: RECTRON 2SA812 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 0.2 * Collector current ICM : -0.1 * Collector-base voltage V(BR)CBO : -60 * Operating and storage junction TJ,Tstg: -55OC to +150OC
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2SA812
OT-23
-55OC
150OC
OT-23
MIL-STD-202E
2SA812
marking M4
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fairchild marking codes sot-23
Abstract: marking of m7 diodes diode M7 marking M3 KST812M6 Diode marking m7 m7 diode M7 marking codes M7 component KST5088
Text: KST812M3/M4/M5/M6/M7 KST812M3/M4/M5/M6/M7 General Purpose Transistor 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value -50
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KST812M3/M4/M5/M6/M7
OT-23
KST5088
fairchild marking codes sot-23
marking of m7 diodes
diode M7
marking M3
KST812M6
Diode marking m7
m7 diode
M7 marking codes
M7 component
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s9015 SOT23 transistor
Abstract: S9015 S9015 SOT-23 s9015 equivalent s9015 transistor S9015 M6 transistor S9015 m6 marking transistor sot-23 s9014 equivalent S9014 SOT-23
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Complementary To S9014. z Excellent HFE Linearity. z Power dissipation. PC=0.2W S9015 Pb Lead-free APPLICATIONS z Low frequency , low noise amplifier. SOT-23 ORDERING INFORMATION
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S9015
S9014.
OT-23
BL/SSSTC084
s9015 SOT23 transistor
S9015
S9015 SOT-23
s9015 equivalent
s9015 transistor
S9015 M6
transistor S9015
m6 marking transistor sot-23
s9014 equivalent
S9014 SOT-23
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BSR58
Abstract: No abstract text available
Text: BSR58 BSR58 N-Channel Low-Frequency Low-Noise Amplifier 3 • This device is designed for low-power chopper or switching application sourced from process 51 2 SOT-23 Mark: M6 1. Drain 2. Source 3. Gate 1 Absolute Maximum Ratings TC=25°C unless otherwise noted
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BSR58
OT-23
BSR58
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MARK M6
Abstract: BSR58
Text: BSR58 BSR58 N-Channel Low-Frequency Low-Noise Amplifier 3 • This device is designed for low-power chopper or switching application sourced from process 51 2 SOT-23 Mark: M6 1. Drain 2. Source 3. Gate 1 Absolute Maximum Ratings TC=25°C unless otherwise noted
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BSR58
OT-23
MARK M6
BSR58
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1D-S marking
Abstract: No abstract text available
Text: PNP EPITAXIAL SILICON TRANSISTOR KST812M3/M4/M5/M6/M7 GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation
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OCR Scan
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KST812M3/M4/M5/M6/M7
OT-23
KST5088
KST812M3
KST812M4
KST812M5
KST812M6
KST812M7
1D-S marking
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Diodes Marking K6
Abstract: BCX17 Diodes Marking K7 MARKING U1 marking A06 MARKING C4 Marking H2 S4 2A S5 MARKING BCV72
Text: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B BCW65C
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OCR Scan
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OT-23
BFQ31
BCV72
BFQ31A
BCW29
BFS20
BCW30
BCW31
BSS63
BSS64
Diodes Marking K6
BCX17
Diodes Marking K7
MARKING U1
marking A06
MARKING C4
Marking H2
S4 2A
S5 MARKING
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