1AM marking transistor
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3904 TRANSISTOR NPN SOT-23 FEATURES z As complementary type the PNP transistor MMBT3906 is recommended z Epitaxial planar die construction MARKING: 1AM 1. BASE
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OT-23
MMBT3904
OT-23
MMBT3906
100mA
100MHz
1AM marking transistor
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 MMBT3904 Plastic-Encapsulate Transistors TRANSISTOR NPN SOT-23 FEATURES z As complementary type the PNP transistor MMBT3906 is recommended z Epitaxial planar die construction MARKING: 1AM 1. BASE
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OT-23
MMBT3904
MMBT3906
100mA
100MHz
10mAdc
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KMA3D6N20SA
Abstract: NO1A
Text: SEMICONDUCTOR KMA3D6N20SA MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 1 No. KNC 1 A 2. Marking 2 Item Marking Description Device Mark KNC KMA3D6N20SA * Lot No. 1A 2007. 11 Week [1:1st Character, A:2nd Character] Note * Lot No. marking method
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KMA3D6N20SA
OT-23
KMA3D6N20SA
NO1A
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1AM MMBT3904
Abstract: transistors 1am transistor 1am
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3904 TRANSISTOR NPN FEATURES z Complementary Type The PNP Transistor MMBT3906 is Recommended z Epitaxial Planar Die Construction SOT-23 (3)C MARKING: 1AM 1AM Code
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OT-23
MMBT3904
MMBT3906
OT-23
1AM MMBT3904
transistors 1am
transistor 1am
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sot23 marking 1AM
Abstract: MARKING 1AM 1AM marking transistor transistor 1am MMBT3904 SOT-23 1AM SOT23 1AM transistor transistor marking 1am 1AM sot-23 sot23 1am
Text: MMBT3904 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features As complementary type the PNP transistor MMBT3906 is recommended Epitaxial planar die construction MARKING: 1AM MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter
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MMBT3904
OT-23
OT-23
MMBT3906
100mA
100MHz
10mAdc
sot23 marking 1AM
MARKING 1AM
1AM marking transistor
transistor 1am
MMBT3904 SOT-23
1AM SOT23
1AM transistor
transistor marking 1am
1AM sot-23
sot23 1am
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BC846
Abstract: No abstract text available
Text: SEMICONDUCTOR BC846 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 1A 1 2 Item Marking Description Device Mark 1 BC846 hFE Grade A A, B * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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BC846
OT-23
BC846
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SS8550 sot-23 Y2
Abstract: ss8550 sot-23 transistor ss8050 sot23 transistor marking y2 ss8050 sot-23 MARKING Y2 SS8050 SS8050 equivalent SS8050 sot-23 equivalent transistor SS8550
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SS8550 SOT-23 TRANSISTOR PNP FEATURES Complimentary to SS8050 1. Base 2.Emitter 3.Collector MARKING: Y2 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter
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OT-23
SS8550
OT-23
SS8050
SS8550 sot-23 Y2
ss8550 sot-23
transistor ss8050
sot23 transistor marking y2
ss8050 sot-23
MARKING Y2
SS8050
SS8050 equivalent
SS8050 sot-23 equivalent
transistor SS8550
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors FMMT591 SOT-23 TRANSISTOR PNP FEATURES Low equivalent on-resistance 1. BASE 2. EMITTER Marking :591 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol
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OT-23
FMMT591
OT-23
-500mA
-500mA,
-50mA
-100mA
-50mA,
100MHz
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 FMMT491 TRANSISTOR NPN FEATURES 1. BASE Low equivalent on-resistance 2. EMITTER 3. COLLECTOR Marking :491 MAXIMUM RATINGS(Ta=25℃ unless otherwise noted) Symbol
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OT-23
OT-23
FMMT491
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 FMMT491 TRANSISTOR NPN FEATURES 1. BASE Low equivalent on-resistance 2. EMITTER 3. COLLECTOR Marking :491 MAXIMUM RATINGS(TA=25℃ unless otherwise noted) Symbol
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OT-23
OT-23
FMMT491
500mA
500mA
100mA
100MHz
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FMMT591
Abstract: power ic 5v 1A
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors FMMT591 SOT-23 TRANSISTOR PNP FEATURES Low equivalent on-resistance 1. BASE 2. EMITTER Marking :591 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol
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OT-23
FMMT591
OT-23
-500mA
-500mA,
-50mA
-100mA
-50mA,
100MHz
FMMT591
power ic 5v 1A
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FMMT491
Abstract: 491 marking transistor Marking 491 power ic 5v 1A
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 FMMT491 TRANSISTOR NPN FEATURES 1. BASE Low equivalent on-resistance 2. EMITTER 3. COLLECTOR Marking :491 MAXIMUM RATINGS(TA=25℃ unless otherwise noted) Symbol
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OT-23
OT-23
FMMT491
500mA
500mA
100mA
100MHz
FMMT491
491 marking transistor
Marking 491
power ic 5v 1A
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SS8550 SOT-23 TRANSISTOR PNP FEATURES Complimentary to SS8050 1. Base 2.Emitter 3.Collector MARKING: Y2 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter
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OT-23
SS8550
OT-23
SS8050
-100mA
-800mA
-800mA,
-80mA
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ss8550 sot-23
Abstract: SS8550 sot-23 Y2 sot23 transistor marking y2 SS8050 Y2 marking Y2 ss8550 ss8050 sot-23 transistor marking y2 SS8050 sot-23 Y2 ss8550 TRANSISTOR
Text: SS8550 SOT-23 Transistor PNP SOT-23 1. Base 2.Emitter 3.Collector Features Complimentary to SS8050 MARKING: Y2 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Dimensions in inches and (millimeters) Parameter Value Units VCBO Collector-Base Voltage
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OT-23
SS8550
OT-23
SS8050
-100A,
-100mA
-800mA
-800mA,
-80mA
ss8550 sot-23
SS8550 sot-23 Y2
sot23 transistor marking y2
SS8050 Y2
marking Y2
ss8550
ss8050 sot-23
transistor marking y2
SS8050 sot-23 Y2
ss8550 TRANSISTOR
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Marking 491
Abstract: fmmt491
Text: FMMT491 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Low equivalent on-resistance Marking :491 MAXIMUM RATINGS(TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage
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FMMT491
OT-23
OT-23
500mA
100mA
100MHz
Marking 491
fmmt491
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 MMBT1616A Plastic-Encapsulate Transistors SOT-23 TRANSISTOR NPN FEATURES y Audio frequency power amplifier y Medium speed switching 1. BASE 2. EMITTER MARKING: 16A 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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OT-23
MMBT1616A
100mA
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power ic 5v 1A
Abstract: No abstract text available
Text: FMMT591 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Low equivalent on-resistance Marking :591 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage
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FMMT591
OT-23
OT-23
-100A,
-10mA,
-500mA
-500mA,
-50mA
-100mA
power ic 5v 1A
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors CJ2306 N-Channel 30-V D-S MOSFET SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S6
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OT-23
CJ2306
OT-23
to150
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2301S P-Channel 20-V D-S MOSFET SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S1
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OT-23
CJ2301S
OT-23
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2301 P-Channel 20-V D-S MOSFET SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S1
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OT-23
CJ2301
OT-23
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2301 P-Channel 20-V D-S MOSFET SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S1
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OT-23
CJ2301
OT-23
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CJ2301
Abstract: cj230 MOSFET SOT-23 P-Channel TrenchFET Power MOSFET SOT-23
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors CJ2301 P-Channel 20-V D-S MOSFET SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S1
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OT-23
CJ2301
OT-23
cj230
MOSFET SOT-23
P-Channel TrenchFET Power MOSFET SOT-23
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MMBD501
Abstract: MMBV2098 MBAV99 A5 sot-23 single DIODE MMBV105G MMBV2097 A5 sot-23 DIODE MMBD2837 MBAS16 MBAV70
Text: SURFACE MOUNT PRODUCTS — SOT-23 continued SOT-23 Switching Diodes (Dual Unless Otherwise Noted) Diode Pinout: Noted Below Device Marking MMBD2836 MBAW56 MMBD2835 MBAV74 MMBD2838 MBAV70 MMBD2837 MMBD6100 MMBD914 MBAS16 MBAL99 MMBD6050 MBAV99 MMBD7000 A2
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OT-23
OT-23
MMBD2836
MBAW56
MMBD2835
MBAV74
MMBD2838
MBAV70
MMBD2837
MMBD6100
MMBD501
MMBV2098
MBAV99
A5 sot-23 single DIODE
MMBV105G
MMBV2097
A5 sot-23 DIODE
MBAS16
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FMMT3903
Abstract: BCV71 BCV72 BCW29 BCW30 BCW31 BCW32 BCW33 BFQ31 BFQ31A
Text: SOT-23 TRANSISTORS & DIODES PRODUCT LISTANO DEVICE IDENTIFICATION TRANSISTORS Device Type Standard marking BCV71 K7 BCV72 K8 BCW29 C1 C2 BCW30 BCW31 TRANSISTORS Reverse Joggle m arking Device Type K6 K9 C4 Standard marking Reverse Joggle marking BFQ31 S2 S3
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OT-23
BCV71
BFQ31
BCV72
BFQ31A
BCW29
BFS20
BCW30
BCW31
BCW32
FMMT3903
BCW33
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