smd marking code ybs
Abstract: q67041-s1417 SP000082879 BSS84P E6327 marking YBs sot-23 YBs 98 BSS84P E6327 L6327 YBs 70
Text: BSS 84 P SIPMOS Small-Signal-Transistor Feature Product Summary • P-Channel · Enhancement mode · Logic Level · Avalanche rated · dv/dt rated VDS RDS on ID -60 V 8 W -0.17 A PG-SOT-23 3 2 1 Type Package Ordering Code Marking BSS84P - E6327 PG-SOT-23
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PG-SOT-23
Q67041-S1417
BSS84P
L6327
SP000082879
E6327
VPS05161
smd marking code ybs
q67041-s1417
SP000082879
BSS84P E6327
marking YBs sot-23
YBs 98
E6327
L6327
YBs 70
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marking L2
Abstract: No abstract text available
Text: SST502 Series Vishay Siliconix Current Regulator Diodes— P o v m in 45 V SST502 SST504 SST506 SST508 SST510 SST503 SST505 SST507 SST509 SST511 TO-236 (SOT-23) > PRODUCT SUMMARY Part Number Typ lF (mA) Part Number tvp if Marking (mA) Marking S ST502 0.43
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SST502
SST503
SST504
SST505
SST506
SST507
SST508
SST509
O-236
marking L2
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smd LB 012
Abstract: BCW89
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW89 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BCW89 = H3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3
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OT-23
BCW89
C-120
smd LB 012
BCW89
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW89 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BCW89 = H3 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration
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OT-23
BCW89
C-120
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BCW69
Abstract: BCW70
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW69 BCW70 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BCW69 = H1 BCW70 = H2 Pin configuration 1 = BASE 2 = EMITTER
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OT-23
BCW69
BCW70
C-120
BCW69
BCW70
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW69 BCW70 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transisto rs Marking BCW69 = H1 BCW70 = H2 Pin configuration 1 = BASE 2 = EMITTER
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OT-23
BCW69
BCW70
C-120
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW89 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transisto rs Marking BCW89 = H3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3
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OT-23
BCW89
C-120
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PDF
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BCW69
Abstract: BCW70
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BCW69 BCW70 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BCW69 = H1
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Original
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OT-23
BCW69
BCW70
C-120
BCW69
BCW70
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BCW89
Abstract: No abstract text available
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BCW89 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BCW89 = H3
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Original
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OT-23
BCW89
C-120
BCW89
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PDF
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW69 BCW70 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BCW69 = H1 BCW70 = H2 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm
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Original
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OT-23
BCW69
BCW70
C-120
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Mosfet
Abstract: SSF3341 sot-23 Marking mosfet p-channel
Text: SSF3341 30V P-Channel MOSFET Main Product Characteristics D VDSS -30V RDS on 42mΩ (typ.) ID -4.2A G S ① SOT-23 Marking and Pin Schematic Diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and
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SSF3341
OT-23
reliSF3341
Mosfet
SSF3341
sot-23 Marking mosfet p-channel
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smd marking code YBs 14
Abstract: smd marking code ybs marking YBs
Text: BSS 84 P SIPMOS Small-Signal-Transistor Feature Product Summary • P-Channel · Enhancement mode · Logic Level · Avalanche rated · dv/dt rated VDS RDS on ID -60 V 8 W -0.17 A PG-SOT-23 3 2 1 VPS05161 Drain pin 3 Type Package Ordering Code Marking BSS 84 P
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Original
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PG-SOT-23
VPS05161
Q67041-S1417
smd marking code YBs 14
smd marking code ybs
marking YBs
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Q67041-S1417
Abstract: BSS 84 infineon
Text: BSS 84 P SIPMOS Small-Signal-Transistor Feature Product Summary • P-Channel · Enhancement mode · Logic Level · Avalanche rated · dv/dt rated VDS -60 V 8 W -0.17 A RDS on ID SOT-23 3 2 1 VPS05161 Drain pin 3 Type Package Ordering Code Marking BSS 84 P
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Original
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OT-23
VPS05161
Q67041-S1417
Q67041-S1417
BSS 84 infineon
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smd marking code YBs SOT-23
Abstract: Q67041-S1417 marking YBS sot-23 smd marking code sot-23 infineon YBs sot-23 Q67041S1417 SMD MARKING QG 6 PIN
Text: BSS 84 P Final data SIPMOS Small-Signal-Transistor Feature Product Summary • P-Channel · Enhancement mode · Logic Level · Avalanche rated · dv/dt rated VDS -60 V 8 W -0.17 A RDS on ID SOT-23 3 2 1 VPS05161 Drain pin 3 Type Package Ordering Code Marking
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Original
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OT-23
VPS05161
Q67041-S1417
smd marking code YBs SOT-23
Q67041-S1417
marking YBS sot-23
smd marking code sot-23 infineon
YBs sot-23
Q67041S1417
SMD MARKING QG 6 PIN
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TP0101T
Abstract: TP0101TS
Text: TP0101T/TS P-Channel Enchancement-Mode MOSFET TO-236 SOT-23 Product Summary ID (A) rDS(on) (W) W TP0101T TP0101TS 0.65 @ VGS = –4.5 V –0.6 –1.0 0.85 @ VGS = –2.5 V –0.5 –0.9 VDS (V) –20 Top View G 1 3 S 2 D TP0101T (P0)* TP0101TS (PS)* *Marking Code for TO-236
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TP0101T/TS
O-236
OT-23)
TP0101T
TP0101TS
S-52430--Rev.
05-May-97
TP0101T
TP0101TS
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VISHAY SOT LOT CODE
Abstract: marking 6k sot-23 package sot23 footprint TP0610K-T1-E3
Text: TP0610K Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () VGS(th) (V) ID (mA) - 60 6 at VGS = - 10 V - 1 to - 3 - 185 TO-236 (SOT-23) G Marking Code: 6Kwll 6K = Part Number Code for TP0610K w = Week Code ll = Lot Traceability
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TP0610K
O-236
OT-23)
TP0610K
2002/95/EC
11-Mar-11
VISHAY SOT LOT CODE
marking 6k sot-23 package
sot23 footprint
TP0610K-T1-E3
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Untitled
Abstract: No abstract text available
Text: TP0101T/TS P-Channel Enchancement-Mode MOSFET TO-236 SOT-23 Product Summary ID (A) Top View G rDS(on) (W) TP0101T TP0101TS 0.65 @ VGS = –4.5 V –0.6 –1.0 0.85 @ VGS = –2.5 V –0.5 –0.9 VDS (V) –20 20 1 3 S 2 D TP0101T (P0)* TP0101TS (PS)* *Marking Code for TO-236
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TP0101T/TS
O-236
OT-23)
TP0101T
TP0101TS
S-52430--Rev.
05-May-97
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PDF
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Untitled
Abstract: No abstract text available
Text: TP0610K Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () VGS(th) (V) ID (mA) - 60 6 at VGS = - 10 V - 1 to - 3 - 185 TO-236 (SOT-23) G Marking Code: 6Kwll 6K = Part Number Code for TP0610K w = Week Code ll = Lot Traceability
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Original
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TP0610K
O-236
OT-23)
TP0610K-T1-E3
TP0610K-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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marking BSs
Abstract: No abstract text available
Text: BSS 284 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS th = -0.8.-1.6 V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking BSS 284 -50 V -0.13 A 10 Ω SOT-23 SDs Type BSS 284 Ordering Code Q62702-S299
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OT-23
Q62702-S299
E6327
marking BSs
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Si2315DS
Abstract: No abstract text available
Text: Si2315DS Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET New Product PRODUCT SUMMARY VDS (V) –12 rDS(on) (W) ID (A) 0.055 @ VGS = –4.5 V "3.5 0.075 @ VGS = –2.5 V "3 0.118 @ VGS = –1.8 V "2 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2315DS (C5)* *Marking Code
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Si2315DS
O-236
OT-23)
S-56947--Rev.
28-Dec-98
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Untitled
Abstract: No abstract text available
Text: Si2315DS Vishay Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –12 12 rDS(on) (W) ID (A) 0.055 @ VGS = –4.5 V "3.5 0.075 @ VGS = –2.5 V "3 0.118 @ VGS = –1.8 V "2 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2315DS (C5)* *Marking Code
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Si2315DS
O-236
OT-23)
S-56947--Rev.
28-Dec-98
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fairchild 1P
Abstract: No abstract text available
Text: S E M IC O N D U C T O R MMBD1201 /1203 /1204 /1205 CONNECTION f 1201 DIAGRAMS 3 1 2NC 1204 t MARKING MMBD1201 24 MMBD1204A 27 MMBD1203 26 MMBD1205A 28 * 1 2 3 I I SOT-23 1203^ 3 * ^ * + 1 ; 205 * J 2 High Conductance Ultra Fast Diode S o u rce d fro m P roce ss 1P.
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OCR Scan
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MMBD1201
OT-23
MMBD1204A
MMBD1203
MMBD1205A
fairchild 1P
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Si2303ADS
Abstract: Si2303DS
Text: Si2303ADS Vishay Siliconix New Product P-Channel, 30-V D-S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.240 @ VGS = –10 V –1.4 0.460 @ VGS = –4.5 V –1.0 VDS (V) –30 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2303DS (3A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si2303ADS
O-236
OT-23)
Si2303DS
18-Jul-08
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Si2303ADS
Abstract: Si2303DS
Text: Si2303ADS Vishay Siliconix New Product P-Channel, 30-V D-S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.240 @ VGS = –10 V –1.4 0.460 @ VGS = –4.5 V –1.0 VDS (V) –30 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2303DS (3A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si2303ADS
O-236
OT-23)
Si2303DS
Conduct25
S-20617--Rev.
29-Apr-02
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