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    SOT-23 MARKING S1 TRANSISTOR Search Results

    SOT-23 MARKING S1 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    2SC2712 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=70~700 / VCE(sat)=0.25 V / AEC-Q101 / SOT-346 Visit Toshiba Electronic Devices & Storage Corporation
    2SC3325 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.5 A / hFE=70~240 / VCE(sat)=0.25 V / AEC-Q101 / SOT-346 Visit Toshiba Electronic Devices & Storage Corporation
    2SC2713 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=0.1 A / hFE=200~700 / VCE(sat)=0.3 V / AEC-Q101 / SOT-346 Visit Toshiba Electronic Devices & Storage Corporation
    2SC4116 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=70~700 / VCE(sat)=0.25 V / AEC-Q101 / SOT-323 Visit Toshiba Electronic Devices & Storage Corporation

    SOT-23 MARKING S1 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    CJ2301

    Abstract: cj230 MOSFET SOT-23 P-Channel TrenchFET Power MOSFET SOT-23
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors CJ2301 P-Channel 20-V D-S MOSFET SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S1


    Original     		OT-23 CJ2301 OT-23 cj230 MOSFET SOT-23 P-Channel TrenchFET Power MOSFET SOT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: TXS0101 www.ti.com . SCES638B – OCTOBER 2007 – REVISED JANUARY 2009 1-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR


    Original     		TXS0101 SCES638B PDF

    Untitled

    Abstract: No abstract text available
    Text: TXS0101 www.ti.com . SCES638B – OCTOBER 2007 – REVISED JANUARY 2009 1-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR


    Original     		TXS0101 SCES638B 500-V A114-B) A115-A) PDF

    Untitled

    Abstract: No abstract text available
    Text: TXS0101 www.ti.com . SCES638B – OCTOBER 2007 – REVISED JANUARY 2009 1-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR


    Original     		TXS0101 SCES638B PDF

    Untitled

    Abstract: No abstract text available
    Text: TXS0101 www.ti.com . SCES638B – OCTOBER 2007 – REVISED JANUARY 2009 1-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR


    Original     		TXS0101 SCES638B PDF

    codes marking 2N7002

    Abstract: SOT-353 MARKING G2 gs 069 LBSS8402DW1T1G 2N7002 MARKING KNP SOT-363 2N7002 BSS84 J-STD-020A SOT-353 MARKING 8v
    Text: LESHAN RADIO COMPANY, LTD. NEW PRODUCT Features • · · · · · · Low On-Resistance: RDS ON Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary Pair Also Available in Lead Free Version LBSS8402DW1T1G


    Original     		LBSS8402DW1T1G OT-363, J-STD-020A MIL-STD-202, 360mm codes marking 2N7002 SOT-353 MARKING G2 gs 069 LBSS8402DW1T1G 2N7002 MARKING KNP SOT-363 2N7002 BSS84 J-STD-020A SOT-353 MARKING 8v PDF

    TXS0101DCKT

    Abstract: No abstract text available
    Text: TXS0101 1-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR FOR OPEN-DRAIN APPLICATIONS www.ti.com SCES638 – OCTOBER 2007 FEATURES 1 • Available in the Texas Instruments NanoFree Package • 1.65 V to 3.6 V on A port and 2.3 V to 5.5 V on B port VCCA ≤ VCCB


    Original     		TXS0101 SCES638 500-V A114-B) A115-A) TXS0101DBVR TXS0101DCKT PDF

    A115-A

    Abstract: C101 TXS0101 TXS0101YZPR TXS0101DCKT
    Text: TXS0101 www.ti.com . SCES638B – OCTOBER 2007 – REVISED JANUARY 2009 1-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR


    Original     		TXS0101 SCES638B A115-A C101 TXS0101 TXS0101YZPR TXS0101DCKT PDF

    TXS0101DCKT

    Abstract: No abstract text available
    Text: TXS0101 www.ti.com . SCES638B – OCTOBER 2007 – REVISED JANUARY 2009 1-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR


    Original     		TXS0101 SCES638B 500-V A114-B) A115-A) TXS0101DCKT PDF

    TXS0101DCKT

    Abstract: No abstract text available
    Text: TXS0101 www.ti.com . SCES638B – OCTOBER 2007 – REVISED JANUARY 2009 1-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR


    Original     		TXS0101 SCES638B 500-V A114-B) A115-A) TXS0101DCKT PDF

    Untitled

    Abstract: No abstract text available
    Text: TXS0101 www.ti.com . SCES638B – OCTOBER 2007 – REVISED JANUARY 2009 1-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR


    Original     		TXS0101 SCES638B 500-V A114-B) A115-A) PDF

    Untitled

    Abstract: No abstract text available
    Text: TXS0101 www.ti.com . SCES638B – OCTOBER 2007 – REVISED JANUARY 2009 1-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR


    Original     		TXS0101 SCES638B 500-V A114-B) A115-A) PDF

    TXS0101DCKT

    Abstract: No abstract text available
    Text: TXS0101 www.ti.com . SCES638B – OCTOBER 2007 – REVISED JANUARY 2009 1-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR


    Original     		TXS0101 SCES638B 500-V A114-B) A115-A) TXS0101DCKT PDF

    A115-A

    Abstract: C101 TXS0101 TXS0101YZPR TXB0101 TXS0101DCKT
    Text: TXS0101 www.ti.com . SCES638B – OCTOBER 2007 – REVISED JANUARY 2009 1-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR


    Original     		TXS0101 SCES638B A115-A C101 TXS0101 TXS0101YZPR TXB0101 TXS0101DCKT PDF

    Untitled

    Abstract: No abstract text available
    Text: TXS0101 www.ti.com . SCES638B – OCTOBER 2007 – REVISED JANUARY 2009 1-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR


    Original     		TXS0101 SCES638B PDF

    E 13003 TRANSISTOR

    Abstract: c s 13003 TRANSISTOR W 13003 TRANSISTOR 13002 TRANSISTOR transistor 13002 LM 13003 T 08 13003 transistor transistor LB 13003 C electronic ballast by transistor 13003 13003 TRANSISTOR
    Text: TELEFUNKEN ELECTRONIC 17E D • a^QO'te DDORb'S? : ■ AL GG TE 13002 TE 13003 TIiLllFlliKiKIK] electronic Crtfuv»Technotec«5 T-33-II Silicon NPN Power Transistors Applications: Switching mode power supply, electronic ballast features: • In multi diffusion technique


    OCR Scan     		T-33-II 0IN41 I3-75. 15A3DIN E 13003 TRANSISTOR c s 13003 TRANSISTOR W 13003 TRANSISTOR 13002 TRANSISTOR transistor 13002 LM 13003 T 08 13003 transistor transistor LB 13003 C electronic ballast by transistor 13003 13003 TRANSISTOR PDF

    Untitled

    Abstract: No abstract text available
    Text: ViSH A Y _ ▼ BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications For broadband amplifiers up to 1 GHz. Features • High power gain


    OCR Scan     		BFS17/BFS17R/BFS17W BFS17 BFS17R BFS17W 20-Jan-99 PDF

    BFR92A

    Abstract: FR92A
    Text: BFR92A/BFR92AR/BFR92AW ViSHAY ▼ Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications Wide band amplifier up to GHz range. Features • High power gain • Low noise figure •


    OCR Scan     		BFR92A/BFR92AR/BFR92AW BFR92A BFR92AR BFR92AW 20-Jan-99 1-408-970-5n FR92A PDF

    85039

    Abstract: No abstract text available
    Text: ViSHAY BFS17A/BFS17AR/BFS17AW ▼ Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications Wide band, low noise, small signal amplifiers up to UHFfrquencies, high speed logic applications and os­


    OCR Scan     		BFS17A/BFS17AR/BFS17AW BFS17A BFS17AR BFS17AW 20-Jan-99 BFS17A/BFS17AR/BFS17AW_ 85039 PDF

    Untitled

    Abstract: No abstract text available
    Text: Y S55y BFQ67/BFQ67R/BFQ67W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated


    OCR Scan     		BFQ67/BFQ67R/BFQ67W BFQ67 BFQ67R BFQ67W 20-Jan-99 PDF

    BFR92R

    Abstract: sot 23 transistor 70.2 MAR 641 TRANSISTOR
    Text: Temic BFR92/BFR92R Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain • Low noise figure • High transition frequency BFR92 Marking: PI Plastic case SOT 23


    OCR Scan     		BFR92/BFR92R BFR92 BFR92R 26-Mar-97 sot 23 transistor 70.2 MAR 641 TRANSISTOR PDF

    Untitled

    Abstract: No abstract text available
    Text: BFR92/BFR92R ViSHAY ▼ Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ A pplications RF amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain


    OCR Scan     		BFR92/BFR92R BFR92 BFR92R 20-Jan-99 PDF

    MAR 641 TRANSISTOR

    Abstract: bfs17a mar 827 Marking E5 626 057-0 BFS17AR mar 722
    Text: Tem ic BFS17A/BFS17AR Semiconductors Silicon NPN Planar RF Transistor Applications Wide-band, low noise, small signal amplifiers up to UHF frequencies, high speed logic applications and oscillator ap­ plications. Features • Low noise figure • High power gain


    OCR Scan     		BFS17A/BFS17AR BFS17A BFS17AR /BFS17AR 26-Mar-97 MAR 641 TRANSISTOR mar 827 Marking E5 626 057-0 mar 722 PDF

    TRA 1309

    Abstract: BFR93R
    Text: BFR93/BFR93R ViSHAY _ ▼ Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications RF amplifier up to GHz range specially for wide band antenna amplifier.


    OCR Scan     		BFR93/BFR93R BFR93 BFR93R 20-Jan-99 TRA 1309 PDF