SOT-25
Abstract: No abstract text available
Text: 管理計画 SOT-25 CONTROL PLAN (SOT-25) ﾄﾚｯｸｽ・ｾﾐｺﾝﾀﾞｸﾀｰ株式会社 代表例 TOREX SEMICONDUCTOR LTD. 工程記号 No. 工程名 Flow Process 1 ｳｴﾊ受入 ◇ Wafer incoming 2 酸化 ○ Oxide 3 酸化膜ﾁｪｯｸ
|
Original
|
OT-25)
SOT-25
|
PDF
|
"Voltage Detector"
Abstract: Voltage Detectors sot-25 XC612
Text: 2. Voltage Detectors ● XC612 Series 2 Channel Voltage Detectors General Description DETAILS Features The XC612 series consist of 2 voltage detectors in 1 minimolded, SOT-25 package.
|
Original
|
XC612
OT-25
OT-25
XC612×
"Voltage Detector"
Voltage Detectors
sot-25
|
PDF
|
J201 spice
Abstract: dual P-Channel JFET sot23 2n4416 transistor spice LS3250A a7 surface mount diode J202 TRANSISTOR fet j310
Text: LS3250 SERIES MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES 6 LEAD SOT-23 SURFACE MOUNT PACKAGE* TIGHT MATCHING1 EXCELLENT THERMAL TRACKING 2mV 1 SOT-23 TOP VIEW 3µV/°C ABSOLUTE MAXIMUM RATINGS2 B1 E2 B2 @ 25 °C unless otherwise stated
|
Original
|
LS3250
OT-23
J201 spice
dual P-Channel JFET sot23
2n4416 transistor spice
LS3250A
a7 surface mount diode
J202 TRANSISTOR
fet j310
|
PDF
|
Dual pnp Dual npn Transistor
Abstract: n-channel JFET sot23-6 surface mount pico-amp diode dual P-Channel JFET sot23 A1 sot23 n-channel dual Channel JFET sot23 "Dual npn Transistor" LS841 SOIC J110 spice A6 SOT-23 MOSFET P-CHANNEL
Text: LS3550 SERIES MONOLITHIC DUAL PNP TRANSISTORS Linear Integrated Systems FEATURES 6 LEAD SOT-23 SURFACE MOUNT PACKAGE* TIGHT MATCHING1 EXCELLENT THERMAL TRACKING 2mV 1 SOT-23 TOP VIEW 3µV/°C ABSOLUTE MAXIMUM RATINGS2 B1 E2 B2 @ 25 °C unless otherwise stated
|
Original
|
LS3550
OT-23
Dual pnp Dual npn Transistor
n-channel JFET sot23-6
surface mount pico-amp diode
dual P-Channel JFET sot23
A1 sot23 n-channel
dual Channel JFET sot23
"Dual npn Transistor"
LS841 SOIC
J110 spice
A6 SOT-23 MOSFET P-CHANNEL
|
PDF
|
k45 diode
Abstract: marking e1 diode DIODE marking A2 transistor k43 marking K45 sot323 A1 marking diode diode k44 Marking k45 BAS40W BAS40W-04
Text: SOT-323 Plastic-Encapsulate DIODE ＳＯＴ－３２３ SCHOTTKY DIODE 1.BASE 2.EMITTER FEATURES 3.COLLECTOR BAS40W-04 Marking:44.K44 ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter １．０１ ＲＥＦ Power dissipation PD : 200 mW（Tamb=25℃）
|
Original
|
OT-323
BAS40W-04
BAS40W
BAS40W-05
525REF
026TYP
650TYP
k45 diode
marking e1 diode
DIODE marking A2
transistor k43
marking K45 sot323
A1 marking diode
diode k44
Marking k45
|
PDF
|
SC-82AB
Abstract: SC82AB
Text: 梱包 MITSUMI 梱包 梱包形態一覧 各パッケージの梱包形態を下表に示します。 パッケージタイプ TO-92 SOP SSOP VSOP TSOP MMP SOT-25 SOT-26 SC-82AB QFP （3）A 7A 8A 8B 8C 8D 8E 14A 14B 16A 16B 18A 20B 22A 24A 28A 28B 16A 20A
|
Original
|
OT-25
OT-26
SC-82AB
SC-82AB
SC82AB
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BSS64 BSS64 C E SOT-23 B Mark: U3 NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
|
Original
|
BSS64
OT-23
|
PDF
|
SOT23 MARK u3
Abstract: BF242
Text: BSS64 BSS64 C E SOT-23 B Mark: U3 NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
|
Original
|
BSS64
OT-23
SOT23 MARK u3
BF242
|
PDF
|
BSS64
Abstract: 01BV CJE SOT-23
Text: BSS64 BSS64 C E SOT-23 B Mark: U3 NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
|
Original
|
BSS64
OT-23
BSS64
01BV
CJE SOT-23
|
PDF
|
5252B
Abstract: MARK 8E diode zener 8w L MMBZ5227B 8B MMBZ5250B Zener diode 81A MARK 8F MMBZ5251B MARKING 8F MMBZ5231B MMBZ5222B
Text: MMBZ5221B~5252B SEMICONDUCTOR ZENER DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. FEATURES E B L L 3 G H A 2 D ・Small Package : SOT-23. 1 MAXIMUM RATING Ta=25℃ UNIT PD* 300
|
Original
|
MMBZ5221B
5252B
OT-23.
MMBZ5252B
MMBZ5251B
MMBZ5250B
MMBZ5248B
MMBZ5245B
MMBZ5246B
MMBZ5242B
5252B
MARK 8E diode
zener 8w L
MMBZ5227B 8B
MMBZ5250B
Zener diode 81A
MARK 8F
MMBZ5251B
MARKING 8F MMBZ5231B
MMBZ5222B
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SA1213 TRANSISTOR（PNP ） ＳＯＴ－８９ FEATURES Power dissipation PCM : 0.5 W （Tamb=25℃） Collector current ICM: -2 A Collector-base voltage V BR CBO : -50
|
Original
|
OT-89
2SA1213
OT-89-3L
500TYP
060TYP
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors BC869 ＳＯＴ－８９ TRANSISTOR（PNP ） FEATURES Power dissipation PCM : 1.35 W （Tamb=25℃） Collector current ICM : -2 A Collector-base voltage V BR CBO : -32
|
Original
|
OT-89
BC869
100MHz
BC869
BC869-16
BC869-25
OT-89-3L
500TYP
060TYP
|
PDF
|
H9 sot 23
Abstract: No abstract text available
Text: SEMICONDUCTOR BAS21 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE High Voltage Switching. FEATURES E B L L ・High Reliability. D ・Small surface mounting type SOT-23 . H MAXIMUM RATING (Ta=25℃) 1 Q VRM 300 V Reverse Voltage VR 250 V Continuous Forward Current
|
Original
|
OT-23)
BAS21
150mA
H9 sot 23
|
PDF
|
MMBZ5239B
Abstract: 712 DIODE marking sot23 MMBZ5245B 5252B
Text: SEMICONDUCTOR MMBZ5221B~5252B TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. E B L L FEATURES D ・Small Package : SOT-23. 3 H G A 2 1 MAXIMUM RATING Ta=25℃ Q P D* 300 mW
|
Original
|
MMBZ5221B
5252B
OT-23.
MMBZ5221B
MMBZ5235B
MMBZ5242B
MMBZ5245B
MMBZ5246B
MMBZ5248B
MMBZ5250B
MMBZ5239B
712 DIODE marking sot23
5252B
|
PDF
|
|
|
BAV23S
Abstract: VR104
Text: SEMICONDUCTOR BAV23S TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE High Voltage Switching. FEATURES ・High Reliability. E B L L 3 H G A 2 D ・Small surface mounting type SOT-23 . 1 MAXIMUM RATING (Ta=25℃) RATING UNIT VRM 300 V Reverse Voltage VR 250 V
|
Original
|
BAV23S
OT-23)
BAV23S
VR104
|
PDF
|
H9 sot 23
Abstract: BAS21
Text: SEMICONDUCTOR BAS21 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE High Voltage Switching. FEATURES ・High Reliability. E B L L 3 H G A 2 D ・Small surface mounting type SOT-23 . 1 MAXIMUM RATING (Ta=25℃) RATING UNIT VRM 300 V Reverse Voltage VR 250 V
|
Original
|
BAS21
OT-23)
H9 sot 23
BAS21
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SB624 TRANSISTOR（ PNP ） ＳＯＴ－２３－３ Ｌ FEATURES １．ＢＡＳＥ Power dissipation PCM : 0.2 W（Tamb=25℃） Collector current ICM : -0.7
|
Original
|
OT-23-3L
2SB624
037TPY
950TPY
700REF
028REF
|
PDF
|
CMSD2004S
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Diode CMSD2004S ＳＯＴ－２３－３Ｌ SWITCHING DIODE FEATURES １．０２ Power dissipation PD ：250 mW（Tamb=25℃） Collector current IF ：225 mA Collector-base voltage
|
Original
|
OT-23-3L
CMSD2004S
037TPY
950TPY
700REF
028REF
CMSD2004S
|
PDF
|
marking code l sot-25 step-up
Abstract: marking code lx sot CD54 MA737 MBRM110L UC3500L UC3500
Text: UNISONIC TECHNOLOGIES CO., LTD UC3500 CMOS IC HIGH EFFICIENCY VFM CONTROLLED STEP-UP DC/DC CONVERTER 3 2 1 5 4 SOT-25 APPLICATIONS * Cellular telephones * PDA and hand held instruments * Palmtop and notebook computer * Portable equipment * Battery powered equipment
|
Original
|
UC3500
OT-25
OT-89
UC3500
UC3500L
QW-R502-072
marking code l sot-25 step-up
marking code lx sot
CD54
MA737
MBRM110L
UC3500L
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate DIODE MMBD4448W ＳＯＴ－３２３ SWITCHING DIODE FEATURES １．２５±０．０５ Power dissipation PD : 200 mW（Tamb=25℃） Collector current IO: 250 mA Collector-base voltage
|
Original
|
OT-323
MMBD4448W
150mA
525REF
026TYP
650TYP
021REF
|
PDF
|
Diode SOT-23 marking J
Abstract: marking t marking 43 BAS40 BAS40-04 BAS40-05 BAS40-06 BAS40LT1 MA MARKING SOT23 MV MARKING SOT23
Text: BAS40LT1 SCHOTTKY DIODE Features Power dissipation 。 P D : 200 mW Tamb=25 C Pluse Drain I F : 200 mA Reverse Voltage V R : 40V Operating and storage junction temperature range 。 。 T j , T stg : -55 C to +150 C + SOT-23 3 1 2 1. + BAS40 Marking:43 -
|
Original
|
BAS40LT1
OT-23
BAS40
BAS40-04
BAS40-05
BAS40-06
100mA
200mA
Diode SOT-23 marking J
marking t
marking 43
BAS40LT1
MA MARKING SOT23
MV MARKING SOT23
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate DIODE BAT54W/AW/CW/SW ＳＯＴ－３２３ SCHOTTKY DIODE FEATURES １．０１ ＲＥＦ Power dissipation PD : 200 mW（Tamb=25℃） Collector current IF: 200 mA
|
Original
|
OT-323
BAT54W/AW/CW/SW
BAT54W
BAT54AW
525REF
026TYP
650TYP
021REF
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate DIODE BAV70W ＳＯＴ－３２３ SWITCHING DIODE FEATURES １．０１ ＲＥＦ １．２５±０．０５ Power dissipation PD : 200 mW（Tamb=25℃） Collector current
|
Original
|
OT-323
BAV70W
525REF
026TYP
650TYP
021REF
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diode RB706F-40 ＳＯＴ－３２３ SCHOTTKY BARRIER DIODE FEATURES: １．０１ ＲＥＦ １．２５±０．０５ Power dissipation PD : 200 mW（Tamb=25℃）
|
Original
|
OT-323
RB706F-40
525REF
026TYP
650TYP
021REF
|
PDF
|
