2SC5343
Abstract: SUT480H SOT353 x3 5001-004
Text: SUT480H Semiconductor Epitaxial planar type NPN Silicon Transistor Description • General purpose transistor Features • Two 2SC5343 chips in SOT-353 package Ordering Information Type NO. Marking SUT480H Package Code X3 SOT-353 Outline Dimensions unit : mm
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SUT480H
2SC5343
OT-353
OT-353
KST-5001-004
SUT480H
SOT353 x3
5001-004
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SOT-353
Abstract: marking 3t RB480K
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-353 Plastic-Encapsulate Diodes SOT-353 RB480K SCHOTTLKY BARRIER DIODE FEATURES z Low current rectification z High reliability MARKING: 3T Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃
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OT-353
RB480K
100mA
SOT-353
marking 3t
RB480K
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2SA1980
Abstract: 2SC5343 SUT497H 2SA19
Text: SUT497H Semiconductor NPN/PNP Epitaxial Planar Silicon Transistor Descriptions • General purpose transistor Features • Both 2SA1980 chip and 2SC5343 chip in SOT-353 package Ordering Information Type NO. Marking SUT497H Package Code X8 SOT-353 Outline Dimensions
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SUT497H
2SA1980
2SC5343
OT-353
OT-353
KST-5005-002
SUT497H
2SA19
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Untitled
Abstract: No abstract text available
Text: JIANGSUCHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-353 Plastic-Encapsulate Transistors UMA3N General purpose transistors dual transistors SOT-353 FEATURES z Two DTA143T chips in a package z Mounting cost and area be cut in half 1 Marking: A3 Equivalent circuit
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OT-353
OT-353
DTA143T
100MHz
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-353 Plastic-Encapsulate Transistors UML2N Isolated transistor and diodes SOT-353 Features z The 2SC2412K and a diodes are housed independently In a package 1 MARKING：L2 TR MAXIMUM RATINGS Ta=25℃ unless otherwise noted
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OT-353
OT-353
2SC2412K
to150
100MHz
100mA
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marking 3t
Abstract: No abstract text available
Text: SCS480N VOLTAGE 45 V, 1 A Small Signal Schottky Plastic-Encapsulate Diode Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-353 FEATURES ♦ ♦ A E L Low current rectification High reliability B MARKING
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SCS480N
OT-353
17-Nov-2009
100mA
marking 3t
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5-pin sot 353 Voltage Regulators
Abstract: "LCK" SOT353-1 thermal resistance
Text: NCP512 80 mA CMOS Low Iq Voltage Regulator in an SC70−5 The NCP512 series of fixed output linear regulators are designed for handheld communication equipment and portable battery powered applications which require low quiescent. The NCP512 series features
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NCP512
SC70-5
SC70-5
SC-88A
OT-353)
5-pin sot 353 Voltage Regulators
"LCK"
SOT353-1 thermal resistance
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Untitled
Abstract: No abstract text available
Text: UMC2NT1, UMC3NT1, UMC5NT1 Preferred Devices Dual Common Base-Collector Bias Resistor Transistors http://onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 3 The Bias Resistor Transistor BRT contains a single transistor with
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OT-353
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ON Semiconductor marking
Abstract: fairchild marking codes sot-23 W2D SOT23 diode w2d SOT-353 MARKING L5 marking code vk, sot-363 va sot-353 1C SOT353 MC74VHC1G135 vsop8 package outline
Text: DLD601/D Rev. 1, Mar-2001 One-Gate Logic One-Gate Logic ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does
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DLD601/D
Mar-2001
r14525
DLD601
ON Semiconductor marking
fairchild marking codes sot-23
W2D SOT23
diode w2d
SOT-353 MARKING L5
marking code vk, sot-363
va sot-353
1C SOT353
MC74VHC1G135
vsop8 package outline
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SMD310
Abstract: SOT353 U1
Text: UMA4NT1, UMA6NT1 Preferred Devices Dual Common Emitter Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base
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r14525
SMD310
SOT353 U1
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marking 6c sot23
Abstract: BC817 6A SOT23 sot-23 marking code 352 6B SOT23 6C sot23 SOT-23 6C On semiconductor date Code sot-23 marking code 6c marking 6A SOT 23
Text: BC817-16LT1, BC817-25LT1, BC817-40LT1 General Purpose Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 45 V Collector −Base Voltage
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BC817-16LT1,
BC817-25LT1,
BC817-40LT1
marking 6c sot23
BC817
6A SOT23
sot-23 marking code 352
6B SOT23
6C sot23
SOT-23 6C
On semiconductor date Code sot-23
marking code 6c
marking 6A SOT 23
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SC59-5
Abstract: No abstract text available
Text: MC74HC1GU04 Single Unbuffered Inverter The MC74HC1GU04 is a high speed CMOS unbuffered inverter fabricated with silicon gate CMOS technology. The MC74HC1GU04 output drive current is 1/2 compared to MC74HC series. • • • • • • • High Speed: tPD = 7 ns Typ at VCC = 5 V
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MC74HC1GU04
MC74HC
SC70-5/SC-88A/SOT-353
OT23-5/TSOP-5/SC59-5
70-5/SC-88A/
OT-353
SC70-5/SC-88A/
OT-353
SC59-5
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IGBT Battery 120 watt Charger circuit diagrams
Abstract: tl494 spice model four relay stabilizer circuit diagram 650 va gsm door lock circuit diagram MRC 433 mosfet MC34066 SOLUTION FOR SMPS USING TL494 MOSFET ESD Rated TL594 phone charger car power inverter TL494
Text: BRD8016/D Rev. 0, Nov-2000 Wireless Component Solutions for Handsets and Accessories Wireless Component Solutions for Handsets and Accessories BRD8016/D Rev. 0, Nov–2000 SCILLC, 2000 “All Rights Reserved’’ WIRELESS EZFET is a trademark of Semiconductor Components Industries, LLC SCILLC .
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BRD8016/D
Nov-2000
r14525
IGBT Battery 120 watt Charger circuit diagrams
tl494 spice model
four relay stabilizer circuit diagram 650 va
gsm door lock circuit diagram
MRC 433 mosfet
MC34066
SOLUTION FOR SMPS USING TL494
MOSFET ESD Rated
TL594 phone charger
car power inverter TL494
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MC7474
Abstract: marking 558 sot23-5 431 SOT23-5 Marking Code m sc70-5 SC70-5 74 08
Text: MC74HC1G08 Single 2−Input AND Gate The MC74HC1G08 is a high speed CMOS 2−input AND gate fabricated with silicon gate CMOS technology. The internal circuit is composed of multiple stages, including a buffer output which provides high noise immunity and stable output.
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MC74HC1G08
MC74HC
SC70-5/SC-88A/SOT-353
OT23-5/ffix
SC70-5/SC-88A/
OT-353
OT-353
MC7474
marking 558 sot23-5
431 SOT23-5
Marking Code m sc70-5
SC70-5 74 08
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431 SOT23-5
Abstract: marking code t2 sot23-5 vh marking sc70 2.gND 4.out sot23-5 MC74HC1G14
Text: MC74HC1G14 Single Inverter with Schmitt−Trigger Input The MC74HC1G14 is a high speed CMOS inverter with Schmitt−Trigger input fabricated with silicon gate CMOS technology. The internal circuit is composed of multiple stages, including a buffer output which provides high noise immunity and stable output.
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MC74HC1G14
MC74HC
SC70-5/SC-88A/SOT-353
SC70-5/SC-88A/
OT-353
OT-353
431 SOT23-5
marking code t2 sot23-5
vh marking sc70
2.gND 4.out sot23-5
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L74VHC1G32
Abstract: 74VHC1G32 MARKING CODE V4 SC-88A footprint sot23-5 transistor T1 A114 A115 C101 JESD22 L74VHC1G32DFT2
Text: LESHAN RADIO COMPANY, LTD. 2-Input OR Gate L74VHC1G32 The L74VHC1G32 is an advanced high speed CMOS 2–input OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Shortly TTL while maintaining CMOS low power dissipation.
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L74VHC1G32
L74VHC1G32
74VHC1G32
MARKING CODE V4
SC-88A footprint
sot23-5 transistor T1
A114
A115
C101
JESD22
L74VHC1G32DFT2
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H2D MARKING CODE
Abstract: H2D Marking h2d diode H2D SOT23
Text: MC74HC1G08 Single 2-Input AND Gate The MC74HC1G08 is a high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. The internal circuit is composed of multiple stages, including a buffer output which provides high noise immunity and stable output.
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MC74HC1G08
MC74HC
MC74HC1G08DFT1
MC74HC1G08DFT2
MC74HC1G08DTT1
H2D MARKING CODE
H2D Marking
h2d diode
H2D SOT23
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DIODE MARKING CODE G SOT23
Abstract: Marking Code .25c sot23 SOt23-5 footprint wave soldering 3.GND SOT-23 marking code 10 sot23 A114 A115 JESD22 MC74HC MC74HC1G32
Text: MC74HC1G32 Single 2−Input OR Gate The MC74HC1G32 is a high speed CMOS 2−input OR gate fabricated with silicon gate CMOS technology. The internal circuit is composed of multiple stages, including a buffer output which provides high noise immunity and stable output.
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MC74HC1G32
MC74HC1G32
MC74HC
SC-88At
MC74HC1G32/D
DIODE MARKING CODE G SOT23
Marking Code .25c sot23
SOt23-5 footprint wave soldering
3.GND SOT-23
marking code 10 sot23
A114
A115
JESD22
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NLV74HC1G08DTT1G
Abstract: marking h2 SOT353 NLV74HC1G08DFT2G SOT23-5 marking H2
Text: MC74HC1G08 Single 2-Input AND Gate The MC74HC1G08 is a high speed CMOS 2−input AND gate fabricated with silicon gate CMOS technology. The internal circuit is composed of multiple stages, including a buffer output which provides high noise immunity and stable output.
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MC74HC1G08
MC74HC
SC-88A
OT-353
SC-70
MC74HC1G08/D
NLV74HC1G08DTT1G
marking h2 SOT353
NLV74HC1G08DFT2G
SOT23-5 marking H2
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Silicon PNP Epitaxial Planer Transistor L4401DW1T1G z Pb-Free Package is Available. MAXIMUM RATINGS Symbol Ratings Unit Collector-Emitter Voltage Parameter VCEO -50 V Collector-Base Voltage VCBO -60 V Emitter-Base Voltage VEBO -6
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L4401DW1T1G
L4401DW1T1G
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Untitled
Abstract: No abstract text available
Text: MC74HC1G32 Single 2−Input OR Gate The MC74HC1G32 is a high speed CMOS 2−input OR gate fabricated with silicon gate CMOS technology. The internal circuit is composed of multiple stages, including a buffer output which provides high noise immunity and stable output.
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MC74HC1G32
MC74HC
SC70-5/SC-88A/SOT-353
OT23-5/TSor
SC70-5/SC-88A/
OT-353
OT-353
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VH32
Abstract: MC74VHC1G32DFT4 A114 A115 C101 JESD22 MC74VHC1G32 VHC1G32 74VHC1G32
Text: 2-Input OR Gate MC74VHC1G32 The MC74VHC1G32 is an advanced high speed CMOS 2–input OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Shortly TTL while maintaining CMOS low power dissipation.
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MC74VHC1G32
MC74VHC1G32
MC74VHC1G32DFT1
MC74VHC1G32DFT2
MC74VHC1G32DFT4
MC74VHC1G32DTT1
MC74VHC1G32DTT3
70/SC
VH32
MC74VHC1G32DFT4
A114
A115
C101
JESD22
VHC1G32
74VHC1G32
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A114
Abstract: A115 C101 JESD22 MC74VHC1G32 VH32 74VHC1G32
Text: LESHAN RADIO COMPANY, LTD. 2-Input OR Gate MC74VHC1G32 The MC74VHC1G32 is an advanced high speed CMOS 2–input OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Shortly TTL while maintaining CMOS low power dissipation.
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MC74VHC1G32
MC74VHC1G32
MC74VHC1G32DFT1
MC74VHC1G32DFT2
MC74VHC1G32DFT4
MC74VHC1G32DTT1
MC74VHC1G32DTT3
70/SC
A114
A115
C101
JESD22
VH32
74VHC1G32
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Untitled
Abstract: No abstract text available
Text: MC74HC1GU04 Single Unbuffered Inverter The MC74HC1GU04 is a high speed CMOS unbuffered inverter fabricated with silicon gate CMOS technology. The MC74HC1GU04 output drive current is 1/2 compared to MC74HC series. • • • • • • High Speed: tPD = 7 ns Typ at VCC = 5 V
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MC74HC1GU04
MC74HC
5/SC59
MC74HC1GU04DFT1
MC74HC1GU04DFT2
MC74HC1GU04DTT1
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