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    SOT-353 VG Search Results

    SOT-353 VG Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    SOT-353 VG Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CHM3413KGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHM3413KGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 3.5 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-88A/SOT-353 FEATURE


    Original     		PDF CHM3413KGP SC-88A/SOT-353 SC-88A CHM3413KGP

    IGBT Battery 120 watt Charger circuit diagrams

    Abstract: tl494 spice model four relay stabilizer circuit diagram 650 va gsm door lock circuit diagram MRC 433 mosfet MC34066 SOLUTION FOR SMPS USING TL494 MOSFET ESD Rated TL594 phone charger car power inverter TL494
    Text: BRD8016/D Rev. 0, Nov-2000 Wireless Component Solutions for Handsets and Accessories Wireless Component Solutions for Handsets and Accessories BRD8016/D Rev. 0, Nov–2000  SCILLC, 2000 “All Rights Reserved’’ WIRELESS EZFET is a trademark of Semiconductor Components Industries, LLC SCILLC .


    Original     		PDF BRD8016/D Nov-2000 r14525 IGBT Battery 120 watt Charger circuit diagrams tl494 spice model four relay stabilizer circuit diagram 650 va gsm door lock circuit diagram MRC 433 mosfet MC34066 SOLUTION FOR SMPS USING TL494 MOSFET ESD Rated TL594 phone charger car power inverter TL494

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET LN2302LT1G VDS= 20V RDS ON , [email protected], [email protected] = 60m Ω RDS(ON), [email protected], [email protected] = 115mΩ 3 1 2 Features SOT– 23 (TO–236AB) High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM


    Original     		PDF LN2302LT1G 236AB) 195mm 150mm 3000PCS/Reel 8000PCS/Reel OT-723 OD-723) 10Reel/Inner

    sot-23 single diode mark PD

    Abstract: LN2302LT1G SC-75 LN2302LT3G mark 642 sot 6 mark 642 sot 363 single diode sot-23 mark pd SOT23 MARKING N02 MARK LTRA SOT23
    Text: LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET LN2302LT1G VDS= 20V RDS ON , [email protected], [email protected] = 60m Ω RDS(ON), [email protected], [email protected] = 115mΩ 3 1 2 Features SOT– 23 (TO–236AB) High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM


    Original     		PDF LN2302LT1G 236AB) 3000/Tape LN2302LT3G 000/Tape 195mm 150mm 3000PCS/Reel sot-23 single diode mark PD LN2302LT1G SC-75 LN2302LT3G mark 642 sot 6 mark 642 sot 363 single diode sot-23 mark pd SOT23 MARKING N02 MARK LTRA SOT23

    LP4101LT1G

    Abstract: P41 sot-23 mark 642 sot 363 MARKING d1 sot-723 SC-75 SOT-353 MARKING 8v sot-23 single diode mark PD
    Text: LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET LP4101LT1G VDS= -20V RDS ON , [email protected], [email protected] = 100 mΩ RDS(ON), [email protected], [email protected] = 150 mΩ 3 Features Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance


    Original     		PDF LP4101LT1G 236AB) 3000/Tape LP4101LT3G 000/Tape 195mm 150mm 3000PCS/Reel LP4101LT1G P41 sot-23 mark 642 sot 363 MARKING d1 sot-723 SC-75 SOT-353 MARKING 8v sot-23 single diode mark PD

    LP2301LT1G

    Abstract: SC-75 SOT-353 MARKING 8v 619 SOT 23 sot-23 single diode mark PD
    Text: LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET LP2301LT1G VDS= -20V RDS ON , [email protected], [email protected] = 100 mΩ RDS(ON), [email protected], [email protected] = 150 mΩ 3 Features Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance


    Original     		PDF LP2301LT1G 236AB) 3000/Tape LP2301LT3G 000/Tape 195mm 150mm 3000PCS/Reel LP2301LT1G SC-75 SOT-353 MARKING 8v 619 SOT 23 sot-23 single diode mark PD

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. ▼ Simple Drive Requirement LP2301LT1G ▼ Small Package Outline ▼ Surface Mount Device ▼ Pb-Free package is available 3 1 2 SOT– 23 TO–236AB D G S Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS


    Original     		PDF LP2301LT1G 236AB)

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. LN2306LT1G ▼ Capable of 2.5V gate drive ▼ Lower on-resistance 3 ▼ Surface mount package ▼ Pb-Free package is available 1 2 SOT– 23 TO–236AB D G S Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS


    Original     		PDF LN2306LT1G 236AB)

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. LN2312LT1G ▼ Capable of 2.5V gate drive ▼ Lower on-resistance 3 ▼ Surface mount package ▼ Pb-Free package is available 1 2 SOT– 23 TO–236AB D G S Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS


    Original     		PDF LN2312LT1G 236AB)

    ln2312

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET VDS= 20V RDS ON , [email protected], [email protected] = 41mΩ RDS(ON), [email protected], [email protected] = 47mΩ Features LN2312LT1G 3 Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance


    Original     		PDF LN2312LT1G 236AB) 195mm 150mm 3000PCS/Reel 8000PCS/Reel OT-723 OD-723) 10Reel/Inner ln2312

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. LP2307LT1G ▼ Simple Drive Requirement ▼ Small Package Outline 3 ▼ Surface Mount Device ▼ Pb-Free package is available 1 2 SOT– 23 TO–236AB D G S Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS


    Original     		PDF LP2307LT1G 236AB)

    LN2312LT1G

    Abstract: LN2312LT3G mark 642 sot 363 SC-75 SOT-353 MARKING 8v SOT-353 vg
    Text: LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET VDS= 20V RDS ON , [email protected], [email protected] = 41mΩ RDS(ON), [email protected], [email protected] = 47mΩ Features LN2312LT1G 3 Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance


    Original     		PDF LN2312LT1G 236AB) 3000/Tape LN2312LT3G 10000/Tape 195mm 150mm 3000PCS/Reel LN2312LT1G LN2312LT3G mark 642 sot 363 SC-75 SOT-353 MARKING 8v SOT-353 vg

    PHP18NQ10T

    Abstract: PHB27NQ10T BYC05B-600 PHB23NQ10T pbyr1045 BYV72EW200 Msd119 BYC08B-600 byv26 equivalent bridge rectifier 8341
    Text: Philips Semiconductors Power in Switched Mode Power Supplies SOT 428 DPAK SOT 404 SOT 223 SOT 429 D 2-PAK 1999 TO247 M3D306 TO220AB SOD 59 TO220AC SOT 186A SOD 113 ISOLATED TO22OAB 2-PIN SOT 186A Philips Semiconductors Ð a worldwide company Argentina: see South America


    Original     		PDF M3D306 O220AB O220AC O22OAB 30EX-150 BYQ30EX-200 BYV32EX-150 BYV42EX-150 BYV32EX-200 BYV42EX-200 PHP18NQ10T PHB27NQ10T BYC05B-600 PHB23NQ10T pbyr1045 BYV72EW200 Msd119 BYC08B-600 byv26 equivalent bridge rectifier 8341

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Power MOSFET 130 mAmps, 50 Volts P–Channel SOT–23 These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry. Typical applications are dc–dc converters, load


    Original     		PDF LBSS84LT1G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Power MOSFET 750 mAmps, 20 Volts LMGSF1N02LT1G N–Channel SOT–23 These miniature surface mount MOSFETs low RDS on assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical


    Original     		PDF LMGSF1N02LT1G OT-23

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002LT1G N–Channel SOT–23 3 • Pb−Free Package is Available. 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ


    Original     		PDF L2N7002LT1G 236AB)

    SOT-353 MARKING 8v

    Abstract: diode SM 88A MOSFET SC-59 power gs 069 SC-75 sot marking a1 353 marking 118 sot-323 marking 25 SOD-323 6C t marking code sot 23
    Text: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mA, 60 V L2N7002WT1G N–Channel SOT–323 • 3 We declare that the material of product compliance with RoHS requirements. 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ


    Original     		PDF L2N7002WT1G SC-70) C330mm 360mm SOT-353 MARKING 8v diode SM 88A MOSFET SC-59 power gs 069 SC-75 sot marking a1 353 marking 118 sot-323 marking 25 SOD-323 6C t marking code sot 23

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. N-CHANNEL POWER MOSFET LMBF170LT1G LMBF170LT1G 3 FEATURE 1 ƽ Pb-Free Package is available. 2 SOT-23 DEVICE MARKING AND ORDERING INFORMATION Device Marking Drain 3 Shipping LMBF170LT1G 6Z 3000/Tape&Reel LMBF170LT3G 6Z 10000/Tape&Reel


    Original     		PDF LMBF170LT1G OT-23 3000/Tape LMBF170LT3G 10000/Tape

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. N-CHANNEL POWER MOSFET LBSS123LT1G LBSS123LT1G FEATURE 3 ƽ Pb-Free Package is available. 1 2 DEVICE MARKING AND ORDERING INFORMATION Device SOT-23 Marking Shipping LBSS123LT1G SA 3000/Tape&Reel LBSS123LT3G SA 10000/Tape&Reel 1 Gate


    Original     		PDF LBSS123LT1G OT-23 3000/Tape LBSS123LT3G 10000/Tape

    MOSFET SC-59 power

    Abstract: LBSS138WT1G LBSS138WT3G SC-75
    Text: LESHAN RADIO COMPANY, LTD. Power MOSFET 200 mAmps, 50 Volts LBSS138WT1G N–Channel SC-70 Typical applications are dc–dc converters, power management in portable and battery–powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.


    Original     		PDF LBSS138WT1G SC-70 330mm 360mm MOSFET SC-59 power LBSS138WT1G LBSS138WT3G SC-75

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Power MOSFET 200 mAmps, 50 Volts LBSS138WT1G N–Channel SC-70 3 Typical applications are dc–dc converters, power management in portable and battery–powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.


    Original     		PDF LBSS138WT1G SC-70

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. LN2302LT1G ▼ Capable of 2.5V gate drive ▼ Small package outline 3 ▼ Surface mount package ▼ Pb-Free package is available 1 2 SOT– 23 TO–236AB D G S Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage


    Original     		PDF LN2302LT1G 236AB)

    LBSS138WT1G

    Abstract: LBSS138WT3G SC-75 LBSS138
    Text: LESHAN RADIO COMPANY, LTD. Power MOSFET 200 mAmps, 50 Volts LBSS138WT1G N–Channel SC-70 Typical applications are dc–dc converters, power management in portable and battery–powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.


    Original     		PDF LBSS138WT1G SC-70 Drain330mm 360mm LBSS138WT1G LBSS138WT3G SC-75 LBSS138

    2N3906 Darlington transistor

    Abstract: BC337 MPS5172 "cross-reference" low noise transistors bc638 transistor mpf102 LOW NOISE BC638 SOT-346 431 BC237 BC307 BC212
    Text: CHAPTER 1 Selector Guide http://onsemi.com 5 Small–Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General–Purpose Transistors . . . . . . . . . . . . . . . . . 8 General–Purpose Multiple Transistors . . . . . . . . 11


    Original     		PDF M1MA151AT1 M1MA151KT1 M1MA152AT1 M1MA152KT1 M1MA151WAT1 M1MA151WKT1 M1MA152WAT1 M1MA152WKT1 BAS16WT1 M1MA141KT1 2N3906 Darlington transistor BC337 MPS5172 "cross-reference" low noise transistors bc638 transistor mpf102 LOW NOISE BC638 SOT-346 431 BC237 BC307 BC212