Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS CJ7252KDW N Channel + P Channel Power MOSFET SOT-363 DESCRIPTION This N Channel + P Channel MOSFET has been designed using advanced power trench process to optimize the RDS ON .
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OT-363
CJ7252KDW
OT-363
2N7002K
CJ502K
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS CJ3139KDW Dual P-Channel Power MOSFET SOT-363 GENERRAL DESCRIPTION This Dual P-Channel MOSFET has been designed using advanced Power Trench process to optimize the RDS ON .
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OT-363
CJ3139KDW
OT-363
CJ3139K
-200mA,
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IC 2003
Abstract: No abstract text available
Text: CTA2P1N COMPLEX TRANSISTOR ARRAY NEW PRODUCT Features • · · Combines MMBT4403 type transistor with 2N7002 type MOSFET Small Surface Mount Package NPN/P-Channel Complement Available: CTA2N1P SOT-363 A Mechanical Data · · · · · Case: SOT-363, Molded Plastic
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MMBT4403
2N7002
OT-363
OT-363,
MIL-STD-202,
500mA
200mA
2N7002)
DS30296
IC 2003
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Untitled
Abstract: No abstract text available
Text: CTA2P1N COMPLEX TRANSISTOR ARRAY NEW PRODUCT Features • · · Combines MMBT4403 type transistor with 2N7002 type MOSFET Small Surface Mount Package NPN/P-Channel Complement Available: CTA2N1P SOT-363 A Mechanical Data · · · · · Case: SOT-363, Molded Plastic
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MMBT4403
2N7002
OT-363
OT-363,
MIL-STD-202,
500mA
200mA
2N7002)
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2N7002 sot363
Abstract: MMBT4403
Text: CTA2P1N COMPLEX TRANSISTOR ARRAY NEW PRODUCT Features • · · Combines MMBT4403 type transistor with 2N7002 type MOSFET Small Surface Mount Package NPN/P-Channel Complement Available: CTA2N1P SOT-363 A Mechanical Data · · · · · Case: SOT-363, Molded Plastic
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MMBT4403
2N7002
OT-363
OT-363,
MIL-STD-202,
500mA
200mA
2N7002)
2N7002 sot363
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2N7002 MARKING
Abstract: 2N7002 sot363 2N7002 MMBT4403
Text: CTA2P1N COMPLEX TRANSISTOR ARRAY NEW PRODUCT Features • · · Combines MMBT4403 type transistor with 2N7002 type MOSFET Small Surface Mount Package NPN/P-Channel Complement Available: CTA2N1P SOT-363 A Mechanical Data · · · · · Case: SOT-363, Molded Plastic
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MMBT4403
2N7002
OT-363
OT-363,
MIL-STD-202,
2N7002)
500mA
2N7002 MARKING
2N7002 sot363
2N7002
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Untitled
Abstract: No abstract text available
Text: CTA2P1N COMPLEX TRANSISTOR ARRAY NEW PRODUCT Features • · · Combines MMBT4403 type transistor with 2N7002 type MOSFET Small Surface Mount Package NPN/P-Channel Complement Available: CTA2N1P SOT-363 A Mechanical Data · · · · · · · Case: SOT-363, Molded Plastic
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MMBT4403
2N7002
OT-363
OT-363,
MIL-STD-202,
J-STD-020A
2N7002)
500mA
200mA
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Untitled
Abstract: No abstract text available
Text: CTA2P1N COMPLEX TRANSISTOR ARRAY NEW PRODUCT Features • · · Combines MMBT4403 type transistor with 2N7002 type MOSFET Small Surface Mount Package NPN/P-Channel Complement Available: CTA2N1P SOT-363 A Mechanical Data · · · · · · · Case: SOT-363, Molded Plastic
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MMBT4403
2N7002
OT-363
OT-363,
MIL-STD-202,
J-STD-020A
2N7002)
500mA
200mA
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Untitled
Abstract: No abstract text available
Text: 2N7002KDW Dual N-Channel MOSFET 6 5 P b Lead Pb -Free 1 Features: 2 4 3 SOT-363(SC-88) * Low On-Resistance * Fast Switching Speed * Low-voltage drive * Easily designed drive circuits * ESD Protected:2000V 6 5 4 D2 G1 S1 S2 G2 D1 1 2 3 Mechanical Data: *Case: SOT-363, Molded Plastic
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2N7002KDW
OT-363
SC-88)
OT-363,
MIL-STD-202,
09-Jan-09
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Dual N-Channel mosfet sot-363
Abstract: sot-363 n-channel mosfet sot-363 Marking G1 marking s1 sot363 2N7002KDW 2N7002DKW SOT363-6 sot-363 marking 20 SOT363 6 SOT-363 mosfet
Text: 2N7002KDW Dual N-Channel MOSFET 6 5 P b Lead Pb -Free 1 Features: 2 4 3 SOT-363(SC-88) * Low On-Resistance * Fast Switching Speed * Low-voltage drive * Easily designed drive circuits * ESD Protected:2000V 6 5 4 D2 G1 S1 S2 G2 D1 1 2 3 Mechanical Data: *Case: SOT-363, Molded Plastic
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2N7002KDW
OT-363
SC-88)
OT-363,
MIL-STD-202,
09-Jan-09
2N7002DKW
Dual N-Channel mosfet sot-363
sot-363 n-channel mosfet
sot-363 Marking G1
marking s1 sot363
2N7002KDW
2N7002DKW
SOT363-6
sot-363 marking 20
SOT363 6
SOT-363 mosfet
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Untitled
Abstract: No abstract text available
Text: BSS84DW DUAL P-CHANNEL ENHANCEMENT MODE MOSFET This device contains two electrically-isolated P-channel, enhancement-mode MOSFETs, housed in a very small SOT-363 SC70-6L package. This device is ideal for portable applications where board space is at a premium.
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BSS84DW
OT-363
SC70-6L)
2002/95/EC
IEC61249
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marking S84 diode
Abstract: sot-363 marking DS
Text: BSS84DW DUAL P-CHANNEL ENHANCEMENT MODE MOSFET This device contains two electrically-isolated P-channel, enhancement-mode MOSFETs, housed in a very small SOT-363 SC70-6L package. This device is ideal for portable applications where board space is at a premium.
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BSS84DW
OT-363
SC70-6L)
2002/95/EC
IEC61249
marking S84 diode
sot-363 marking DS
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BSS84DW
Abstract: SC70-6L marking S84 diode
Text: BSS84DW DUAL P-CHANNEL ENHANCEMENT MODE MOSFET This device contains two electrically-isolated P-channel, enhancement-mode MOSFETs, housed in a very small SOT-363 SC70-6L package. This device is ideal for portable applications where board space is at a premium.
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BSS84DW
OT-363
SC70-6L)
BSS84DW
T/R13
SC70-6L
marking S84 diode
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marking S84 diode
Abstract: BSS84DW SC70-6L
Text: BSS84DW DUAL P-CHANNEL ENHANCEMENT MODE MOSFET This device contains two electrically-isolated P-channel, enhancement-mode MOSFETs, housed in a very small SOT-363 SC70-6L package. This device is ideal for portable applications where board space is at a premium.
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BSS84DW
OT-363
SC70-6L)
2002/95/EC
BSS84DW
T/R13
marking S84 diode
SC70-6L
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2N7002 PANJIT
Abstract: No abstract text available
Text: BSS8402DW COMPLIMENTARY PAIR ENHANCEMENT MODE MOSFETS This space-efficient device contains an electrically-isolated complimentary pair of enhancement-mode MOSFETs one N-channel and one P-channel . It comes in a very small SOT-363 (SC70-6L) package. This device is ideal for
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BSS8402DW
OT-363
SC70-6L)
2002/95/EC
IEC61249
2N7002 PANJIT
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2N7002
Abstract: BSS84 BSS8402DW SC70-6L
Text: BSS8402DW COMPLIMENTARY PAIR ENHANCEMENT MODE MOSFETS This space-efficient device contains an electrically-isolated complimentary pair of enhancement-mode MOSFETs one N-channel and one P-channel . It comes in a very small SOT-363 (SC70-6L) package. This device is ideal for
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BSS8402DW
OT-363
SC70-6L)
BSS8402DW
T/R13:
T/R13-R:
2N7002
BSS84
SC70-6L
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Untitled
Abstract: No abstract text available
Text: BSS8402DW COMPLIMENTARY PAIR ENHANCEMENT MODE MOSFETS This space-efficient device contains an electrically-isolated complimentary pair of enhancement-mode MOSFETs one N-channel and one P-channel . It comes in a very small SOT-363 (SC70-6L) package. This device is ideal for
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BSS8402DW
OT-363
SC70-6L)
BSS8402DW
T/R13
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Q1 2N7002
Abstract: 2N7002 PANJIT 2N7002 BSS84 BSS8402DW SC70-6L marking code s82 SOT-363 marking 05
Text: BSS8402DW COMPLIMENTARY PAIR ENHANCEMENT MODE MOSFETS This space-efficient device contains an electrically-isolated complimentary pair of enhancement-mode MOSFETs one N-channel and one P-channel . It comes in a very small SOT-363 (SC70-6L) package. This device is ideal for
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BSS8402DW
OT-363
SC70-6L)
2002/95/EC
BSS8402DW
T/R13:
T/R13-R:
Q1 2N7002
2N7002 PANJIT
2N7002
BSS84
SC70-6L
marking code s82
SOT-363 marking 05
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SC706
Abstract: sot-363 marking DS
Text: BSS8402DW COMPLIMENTARY PAIR ENHANCEMENT MODE MOSFETS This space-efficient device contains an electrically-isolated complimentary pair of enhancement-mode MOSFETs one N-channel and one P-channel . It comes in a very small SOT-363 (SC70-6L) package. This device is ideal for
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BSS8402DW
OT-363
SC70-6L)
2002/95/EC
BSS8402DW
T/R13:
T/R13-R:
SC706
sot-363 marking DS
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high current sot-363 p-channel mosfet
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHM3413SPT SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 3.5 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-88/SOT-363 FEATURE
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CHM3413SPT
SC-88/SOT-363
SC-88
high current sot-363 p-channel mosfet
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CHM3413SGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHM3413SGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 3.5 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-88/SOT-363 FEATURE
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CHM3413SGP
SC-88/SOT-363
SC-88
CHM3413SGP
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS CJ3439KDW N channel+P Channel MOSFET FEATURE z Surface Mount Package z Low RDS on z Operated at Low Logic Level Gate Drive z ESD Protected Gate z Including a N-ch CJ3134K and a P-ch CJ3139K
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OT-363
CJ3439KDW
CJ3134K
CJ3139K
OT-363
-200mA
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P-Channel Enhancement FET
Abstract: sot-363 p-channel mosfet SOT-363 marking 05 Dual P-Channel mosfet sot-363 high current sot-363 p-channel mosfet
Text: CHENMKO ENTERPRISE CO.,LTD CHT84SPT SURFACE MOUNT Dual P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 50 Volts CURRENT 0.13 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-88/SOT-363 FEATURE
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CHT84SPT
SC-88/SOT-363
SC-88/SOT-363)
-130m
P-Channel Enhancement FET
sot-363 p-channel mosfet
SOT-363 marking 05
Dual P-Channel mosfet sot-363
high current sot-363 p-channel mosfet
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CHT84SGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT CHT84SGP Dual P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 50 Volts CURRENT 0.13 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-88/SOT-363 FEATURE
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CHT84SGP
SC-88/SOT-363
SC-88/SOT-363)
-130m
CHT84SGP
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