Untitled
Abstract: No abstract text available
Text: 2SD2153 Transistor, NPN Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SD2153; DN-*, where ★ is hFE code • excellent current-to-gain characteristics • 2S02153 (MPT3) ♦0.2 4-5 —0.1 1.6 * 0.1
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OCR Scan
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2SD2153
OT-89,
SC-62)
2SD2153;
2S02153
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SC4132 Transistor, NPN Features Dimensions Units : mm available in MPT3 (MPT, SOT-89, SC-62) package 2SC4132 (MPT3) ♦0.2 4 .5 —0,1 package marking: 2SC4132; CB-*, where ★ is hFE code 1,6 * 0.1 zS _ ~ rr high breakdown voltage BVqjtq = 120 V +0.1 10.4—0 05
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OCR Scan
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2SC4132
OT-89,
SC-62)
2SC4132;
2SC4132
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PDF
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marking EB 202 transistor
Abstract: 2SC4672 transistor 2SC4672 ZE TRANSISTOR MARKING
Text: 2SC4672 Transistor, NPN Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package 2SC4672 (M PT3) +0.2 4 .5 —0 1 • • • package marking: 2SC4672; DK-fr, where ★ is hFE code 1.6 * 0.1 zE L if low collector saturation voltage,
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OCR Scan
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2SC4672
OT-89,
SC-62)
2SC4672;
2SC4672
marking EB 202 transistor
transistor 2SC4672
ZE TRANSISTOR MARKING
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PDF
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2sc4672 marking
Abstract: 2SC4672 transistor dk 50 5F marking code transistor dk transistor TRANSISTOR dk q FR210 ZI Marking Code transistor TRANSISTOR 2SC T100
Text: 2SC4672 Transistor, NPN Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SC4672; D K *, where ★ is hFE code • 2SC4672 (MPT3) s _t 0o -2 4/i .5 .i 1.6±0.1 IS". if low collector saturation voltage,
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OCR Scan
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2SC4672
OT-89,
SC-62)
2SC4672;
2sc4672 marking
2SC4672
transistor dk 50
5F marking code transistor
dk transistor
TRANSISTOR dk q
FR210
ZI Marking Code transistor
TRANSISTOR 2SC
T100
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SD2150 Transistor, NPN Features Dimensions Units : mm • • • available in MPT3 (MPT, SOT-89, SC-62) package package marking: 2SD2150; CF^, where ★ is hFE code 2SD2150 (MPT3) +0.2 4 .5 - 0 .1 lf> 1.6 *0.1 I If excellent current-to-gain characteristics
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OCR Scan
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2SD2150
OT-89,
SC-62)
2SD2150;
2SD2150
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PDF
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marking AG SOT 89
Abstract: TR13
Text: Package Details - SOT-89 Mechanical Drawing BOTTOM VIEW Lead Code: Reference individual device datasheet. Part Marking: Full Part Number. Mounting Pad Geometry Dimensions in mm Central TM Semiconductor Corp. w w w. c e n t r a l s e m i . c o m R3 (5-November 2007)
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Original
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OT-89
EIA-481-1-A
marking AG SOT 89
TR13
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PDF
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TR13
Abstract: sot-89 MARKING CODE au
Text: Package Details - SOT-89 Mechanical Drawing BOTTOM VIEW Lead Code: Reference individual device datasheet. Part Marking: Full Part Number. Mounting Pad Geometry Dimensions in mm Central TM Semiconductor Corp. w w w. c e n t r a l s e m i . c o m R3 (5-November 2007)
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Original
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OT-89
EIA-481-1-A
la40-31-5
26-October
TR13
sot-89 MARKING CODE au
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PDF
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marking T28
Abstract: T31 Marking sot regulator marking T34 T33 Marking sot regulator
Text: ftlAIEf SURFACE MOUNT DUAL ZENER DIODES 1 WATT DUAL ZENER DIODES / SOT-89 Type Number Marking . V l l l i l l c l i =} | HU OPERATING/STORAGE TEMPERATURE RANGE -5 5 °C to +150°C Voltage Range Maximum Zener . Impedance Z Z T a t lz r Typical Temperature Coefficient
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OCR Scan
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OT-89
DZ89-C3V9
DZ89-C4V3
DZ89-C4V7
DZ89-C5V1
DZ89-C5V6
OZ89-C6V2
DZ89-C6V8
DZ89-C7V5
DZ89-C8V2
marking T28
T31 Marking sot regulator
marking T34
T33 Marking sot regulator
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PDF
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2SD1766
Abstract: No abstract text available
Text: 2SD1766 Transistor, NPN Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SD1766; DB-*, where ★ is hFg code • • • 2SD1766 (MPT3) +0 2 4 5 —0.1 1 .6 * 0 1 m Ö 1 %2 ¿L. R : H I 1 P q = 2 W, when mounted on 40 x 40 x
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OCR Scan
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2SD1766
OT-89,
SC-62)
2SD1766;
2SB1188
2SD1766
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PDF
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NTA4153NT1G
Abstract: NTE4153NT1G NTA4153N NTA4153NT1 NTE4153N sot416
Text: NTA4153N, NTE4153N Small Signal MOSFET 20 V, 915 mA, Single N−Channel with ESD Protection, SC−75 and SC−89 Features • • • • Low RDS on Improving System Efficiency Low Threshold Voltage, 1.5 V Rated ESD Protected Gate Pb−Free Packages are Available
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Original
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NTA4153N,
NTE4153N
SC-75
SC-89
NTA4153N/D
NTA4153NT1G
NTE4153NT1G
NTA4153N
NTA4153NT1
NTE4153N
sot416
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PDF
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diode marking gg 2a
Abstract: BAW79C 79AB
Text: Silicon Switching Diodes • • • BAW 79 A BAW 79 D For high-speed switching High breakdown voltage Common cathode Type BAW BAW BAW BAW 79 79 79 79 A B C D Marking Ordering code for versions in bulk Ordering code for versions on 12 mm-tape Package GE GF
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OCR Scan
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Q62702-A679
Q62702-A680
Q62702-A681
Q62702-A682
Q62702-A781
Q62702-A782
Q62702-A771
Q62702-A733
diode marking gg 2a
BAW79C
79AB
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PDF
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Untitled
Abstract: No abstract text available
Text: NTA4153N, NTE4153N Small Signal MOSFET 20 V, 915 mA, Single N−Channel with ESD Protection, SC−75 and SC−89 Features • • • • http://onsemi.com Low RDS on Improving System Efficiency Low Threshold Voltage ESD Protected Gate Pb−Free Packages are Available
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Original
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NTA4153N,
NTE4153N
SC-75
SC-89
NTE4153N
SC-89*
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Dual Switching Diodes LBAW56WT1G z Pb-Free Package is Available. 3 DEVICE MARKING 1 LBAW56WT1G = A1 2 MAXIMUM RATINGS TA = 25°C CASE 419–04, STYLE 4 Rating Symbol Max Unit Reverse Voltag VR Forward Current Peak Forward Surge Current
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Original
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LBAW56WT1G
3000/Tape
LBAW56WT3G
10000/Tape
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PDF
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diode T3 Marking
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Common Cathode Silicon Dual Switching Diode LM1MA141WKT1G LM1MA142WKT1G This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-70 package which is designed for low power surface mount applications.
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Original
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LM1MA141WKT1G
LM1MA142WKT1G
SC-70
70/SOTâ
LM1MA141WKT1G
diode T3 Marking
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PDF
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476A diode
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Common Cathode Silicon Dual Switching Diode This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–89 package which is designed for low
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Original
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LDAN222T1
SC-89
476A diode
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PDF
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TRANSISTOR SMD MARKING CODE A45
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. PNP General Purpose Amplifier Transistor Surface Mount LMSB709LT1G FEATURE ƽSmall plastic SMD package. 3 ƽGeneral purpose amplification. ƽPb-Free Package is available. 2 DEVICE MARKING AND ORDERING INFORMATION 1 Device LMSB709LT1G
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Original
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LMSB709LT1G
LMSB709LT3G
3000/Tape
10000/Tape
OT-23
TRANSISTOR SMD MARKING CODE A45
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed LM1MA141KT1G LM1MA142KT1G switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.
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Original
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LM1MA141KT1G
LM1MA142KT1G
70/SOTâ
OT-323/SC-70
3000/Tape
LM1MA141KT3G
10000/Tape
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PDF
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NTA4153N
Abstract: NTA4153NT1 NTA4153NT1G NTE4153N NTE4153NT1G
Text: NTA4153N, NTE4153N Small Signal MOSFET 20 V, 915 mA, Single N−Channel with ESD Protection, SC−75 and SC−89 Features • • • • http://onsemi.com Low RDS on Improving System Efficiency Low Threshold Voltage ESD Protected Gate Pb−Free Packages are Available
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Original
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NTA4153N,
NTE4153N
SC-75
SC-89
NTA4153N/D
NTA4153N
NTA4153NT1
NTA4153NT1G
NTE4153N
NTE4153NT1G
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PDF
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178 15T
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L9015TLT1G FEATURE 3 ƽComplementary to L9014. ƽPb-Free package is available. 1 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping SOT– 23 L9015TLT1G 15T 3000/Tape&Reel L9015TLT3G
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Original
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L9015TLT1G
L9014.
3000/Tape
L9015TLT3G
10000/Tape
178 15T
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PDF
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ahr 49 transistor
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KXLT1G PNP Silicon 3 FEATURE ƽHigh current capacity in compact package. IC = í0.8A. 1 ƽEpitaxial planar type. 2 ƽNPN complement: L2SD1781K ƽPb-Free Package is available. SOT– 23 TO–236AB
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Original
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L2SB1197KXLT1G
L2SD1781K
236AB)
L2SB1197KQLT1G
3000/Tape
L2SB1197KQLT3G
10000/Tape
L2SB1197KRLT1G
L2SB1197KRLT3G
ahr 49 transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. NPN General Purpose Amplifier Transistors Surface Mount Pb-Free Package is available. LMSD601–RLT1G LMSD601–SLT1G DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMSD601-RLT1G YR 3000/Tape&Reel LMSD601-RLT3G YR
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Original
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LMSD601â
LMSD601-RLT1G
3000/Tape
LMSD601-RLT3G
10000/Tape
LMSD601-SLT1G
LMSD601-SLT3G
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Preliminary Information General Purpose Transistors NPN Silicon LMBT2222AWT1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 package which 3 COLLECTOR is designed for low power surface mount
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Original
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LMBT2222AWT1G
323/SCâ
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Dual Serise Switching Diodes LBAV99WT1G LBAV99RWT1G Features • Pb−Free Package May be Available. The G−Suffix Denotes a 3 Pb−Free Lead Finish The LBAV99WT1 is a smaller package, equivalent to the LBAV99LT1. Suggested Applications
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Original
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LBAV99WT1G
LBAV99RWT1G
LBAV99WT1
LBAV99LT1.
LBAV99WT1
OT-323
SC-70)
LBAV99RWT1
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. High Voltage Switching Diode LBAS20HT1G z Pb-Free Package is Available. 1 z Device Marking: JR 1 CATHODE 2 ANODE 2 SOD– 323 MARKING DIAGRAM Ordering Information Device Marking Shipping LBAS20HT1G JR 3000/Tape&Reel LBAS20HT3G JR
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Original
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LBAS20HT1G
3000/Tape
LBAS20HT3G
10000/Tape
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PDF
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