SOT121 PACKAGE Search Results

SOT121 PACKAGE Result Highlights (5)

Part	Manufacturer	Description
TPH9R00CQH	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N)
TPH9R00CQ5	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 150 V, 64 A, 0.009 Ω@10 V, High-speed diode, SOP Advance / SOP Advance(N)
TPH1R306PL	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 60 V, 100 A, 0.00134 Ω@10 V, SOP Advance / SOP Advance(N)
TPHR8504PL	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 150 A, 0.00085 Ω@10 V, SOP Advance / SOP Advance(N)
TPH2R408QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance

SOT121 PACKAGE Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Concise Catalogue 1996 Philips Semiconductors DISCRETE SEMICONDUCTORS RF power transistors RF & MICROWAVE SEMICONDUCTORS & MODULES RF POWER MOS TRANSISTORS type number PL PEP ^DS (W) (V) G p (dB) package 20.1) 23 20.1) 17 20 SOT123 SOT 123 SOT121 SOT121	OCR Scan	OT123 OT121 BLF145 BLF175	PDF
BLF246 Abstract: SOT121 Package marking c8 transistor Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF246 VHF power MOS transistor Product specification Supersedes data of September 1992 1996 Oct 21 Philips Semiconductors Product specification VHF power MOS transistor BLF246 FEATURES PINNING - SOT121 • High power gain	Original	BLF246 OT121 OT121 BLF246 SOT121 Package marking c8 transistor	PDF
sot123 package Abstract: BLF543 BLF221 sot 123 blf246b flange SOT-123 Text: 65 RF/Microwave Devices RF Power MOS Transistors cont. Type No. Package Outline Load Power (W) V DS (V) f (MHz) Source Gain (dB) 28 28 28 28 28 50 28 28 50 28 50 28 50 28 50 175 175 175 175 175 108 175 108 108 108 108 175 108 175 108 14 typ 13 13 13 14 19 typ	OCR Scan	BLF241 BLF242 BLF244 BLF245 BLF245B BLF175 BLF246B BLF246 BLF276 BLF147 sot123 package BLF543 BLF221 sot 123 flange SOT-123	PDF
SOT123 Package Abstract: BLV62 BLW33 BLX98 BLF147 BLF175 SOT-48 bfr96s SOT123 Text: 64 RF/Microwave Devices Bipolar RF Transmitting Transistors TV Transposers/Transmitters co n t. Type No. Output Power @ djm Package Outline SYNC (W) (dB) Output Power P0 - IdB (W) Power Gain (dB) Supply Voltage (V) 115 225 11 9.0 28 35 10 11 11 6 10 10 5.5	OCR Scan	BLV36 BLV38 OT-161, OT-179, BFR96S BFQ34 BLW32 BLX96 BFQ68 BLW33 SOT123 Package BLV62 BLX98 BLF147 BLF175 SOT-48 SOT123	PDF
sot123 package Abstract: sot123 SOT-123 philips blx15 blx13 BLW50F sot122f Blx15 philips BLW96 Text: Philips Semiconductors Concise Catalogue 1996 RF & MICROWAVE SEMICONDUCTORS & MODULES DISCRETE SEMICONDUCTORS RF power transistors BIPOLAR RF TRANSMITTING TRANSISTORS HF SINGLE SIDEBAND 1.5 - 30 MHz BIPOLAR TRANSISTORS • Very wide range of devices with supply voltages	OCR Scan	BLV10 BLY87C BLY87CAJ1 BLV20 BLY91C BLY91C/01 BLV11 BLY88C BLY88C/01 BLV21 sot123 package sot123 SOT-123 philips blx15 blx13 BLW50F sot122f Blx15 philips BLW96	PDF
T119 A Abstract: sot 122 SOT123 Package BLW78 Text: 63 RF/Microwave Devices Bipolar RF Transmitting Transistors SHF 900 - 960 MHz cont. Load Power (W) @ 900 MHz Power Gain (dB) @ 900 MHz Supply Voltage (V) 35* 50 50* 150(PEP)* 7* 8.5 8.1* 7.5* 24 26 26 26 Package Outline Load Power (W) @ 108 MHz Power Gain	OCR Scan	4-26V BLV97CE BLV101A BLV101B BLV948 OT-171, OT-273, OT-262A2, 2N3866 T119 A sot 122 SOT123 Package BLW78	PDF
BLY93A Abstract: blw79 SOT123 Package BLW80 BLV11 BFS22A BLY94 BLY93C bly88 Text: 60 RF/Microwave Devices Bipolar RF Transmitting Transistors VHF 25175M H z Package Outline Type No. Load Power W @ 175MHz Power Gain (dB) @ 175MHz Supply Voltage (V) 0.7 1.5 3 9 8 8.4 9.4 7.4 7.5 7.5 7.5 7.5 1 2 2 4 4 4 4 8 8 8 10 15 15 15 15 25 25 28 30	OCR Scan	25175M 175MHz 2N4427 BFQ42 BFQ43 BLW29 OT-120, BLY93A blw79 SOT123 Package BLW80 BLV11 BFS22A BLY94 BLY93C bly88	PDF
SOT123 Package Abstract: SOT123 SOT-123 BFS22A SOT121 Package BFQ43 BFQ43 datasheet BLY93 BLX15 bfq34 application note Text: DISCRETE SEMICONDUCTORS DATA SHEET Selection guide RF Power Transistors for HF and VHF 1995 Nov 21 File under Discrete Semiconductors, SC08a Philips Semiconductors RF Power Transistors for HF and VHF Selection guide INTRODUCTION The following tables represent our complete range of bipolar and MOS transmitting transistors, grouped according to the	Original	SC08a BLV10 OT123 BLY87C/01 SCD45 SOT123 Package SOT123 SOT-123 BFS22A SOT121 Package BFQ43 BFQ43 datasheet BLY93 BLX15 bfq34 application note	PDF
SOT123 Package Abstract: No abstract text available Text: Philips Semiconductors Concise Catalogue 1996 DISCRETE SEMICONDUCTORS RF power transistors RF & MICROWAVE SEMICONDUCTORS & MODULES VHF 25 - 175 MHz BIPOLAR TRANSISTORS continued type number load power @ 175 MHz W power gain @ 175 MHz (dB) supply voltage	OCR Scan	2N3866 2N3553 BFS23A BLV20 BLY91C BLY91C/01 BLV21 BLY92C BLY92C/01 BLW84 SOT123 Package	PDF
t123 Abstract: BLW50F T121 BLW77 Text: 59 RF/Microwave Devices Bipolar RF Transm itting Transistors The P h ilip s range of fixed/m obile radio and transposer/transm itting transistors is one of the w idest available, with frequencies from 150 kHz to 1.5 GHz, output pow ers from 100 m W to 300W and over thirty package options.	OCR Scan	6-30MHz BLY91A BLV11 BLV21 T-123, T-120, OT48/2, t123 BLW50F T121 BLW77	PDF
BA101D Abstract: J04075 sars0 S0146 2N5529 2N6482 B40-12A SGSIF464 TIP542 acrian inc Text: RF POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 2SC3748 BOlllA BOlllA 2N5327 SFT6200 (A) 2N5328 SMl2168 BU100A ~~~~~-O5 25 30 SVT250-05 SVT250-05 SVT300-05 SVT300-05 SVT300-05 S01457 2S01443 2S01445 2SD~:5A 35 40 TIP543 TIP543 2N5940 2N5939 TIP542	Original	SGSIF464 SGSF464 SGSF564 BlW78 S01290 2N6093 2N5304 BOl13 SMl2171 BA101D J04075 sars0 S0146 2N5529 2N6482 B40-12A SGSIF464 TIP542 acrian inc	PDF
marking code 7Gs Abstract: 3 DG 1008 BLF147 71005 philips resistor 2322-153 SOT121 Package Text: Product «pacification Philips Semiconductor» T -J ^ ~ /5 B L F 1 4 7 VHF power MOS transistor PHILIPS INTERNATIONAL FEATURES • • • • • 5bE D • 711Dfl2b 0DM3703 27T BIPHIN PIN CONFIGURATION High power gain Low intermodulation distortion Easy power control	OCR Scan	-/5BLF147 0DM3703 OT121 BLF147 711005b 0DM3711 marking code 7Gs 3 DG 1008 BLF147 71005 philips resistor 2322-153 SOT121 Package	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors WM bb 5 3 R 31 Q02RR6Q 536 M APX Product specification VHF power MOS transistor BLF246 N AUER PHILIPS/DISCRETE FEATURES bRE PIN CONFIGURATION • High power gain • Low noise figure • Easy power control • Good thermal stability	OCR Scan	Q02RR6Q BLF246 OT121 UCA939 CA940	PDF
choke marking nb 03 Abstract: SOT121 Package BLF246 Text: Philips Semiconductors a tiS 3 R 3 1 0 0 5 TRÔD 536 APX Product specification VHF power MOS transistor BLF246 b'ìE i> N AUER PHILIPS/DISCRETE FEATURES PIN CONFIGURATION • High power gain • Low noise figure • Easy power control • Good thermal stability	OCR Scan	Q05TRÃ BLF246 OT121 OT121 /CA93V choke marking nb 03 SOT121 Package BLF246	PDF

SOT333 Abstract: SOT423 sot468 thermal compound wps II TO metal package aluminum kovar SOT439 Transistor Packages sot262 SOT443 rf transistor smd pages Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 4 RF and microwave transistor packages RF AND MICROWAVE TRANSISTOR PACKAGES handbook, halfpage The packages of electronic devices are, in general, designed to: metal cap – Protect the electronics from mechanical damage	Original		PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors • I bbS3T31 DDS^flSS MTl M A P * Product specification BLF147 VHF power MOS transistor - AnER PHIi-lPS/]>ISCRETE FEATURES bTE J> PIN CONFIGURATION • High power gain • Low intermodulation distortion • Easy power control • Good thermal stability	OCR Scan	bbS3T31 BLF147 OT121 MCA124 bbS3T31	PDF
BLF177 Abstract: philips ET-E 60 4312 020 36642 2222 030 capacitor philips MARKING H3B WCA244 Text: bbS3^31 GOSTfi?1! Philips Semiconductors H3B [A P X Product specification BLF177 HF/VHF power MOS transistor N AMER P H I L I P S / D I S C R E T E b'iE D PIN CONFIGURATION FEATURES • High power gain • Low intermodulation distortion • Easy power control	OCR Scan	BLF177 OT121 MBA379 philips ET-E 60 4312 020 36642 2222 030 capacitor philips MARKING H3B WCA244	PDF
Philips 2222 capacitor Abstract: philips capacitor philips capacitor 2222 Text: Philips Semiconductors bbS 3^31 Q Q S T f i ? 1! T35 M A P X ^ P r o d u c ts p e c ific a tio n HF/VHF power MOS transistor ^ — BLF177 N AMER PHILIPS/DISCRETE b^E D PIN CONFIGURATION FEATURES • High power gain • Low intermodulation distortion • Easy power control	OCR Scan	BLF177 OT121 Philips 2222 capacitor philips capacitor philips capacitor 2222	PDF
BLF147 Abstract: resistor gp series 71005 transistor d1 391 SOT121B SOT121 Package Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF147 VHF power MOS transistor Product specification September 1992 Philips Semiconductors Product specification VHF power MOS transistor FEATURES BLF147 PIN CONFIGURATION • High power gain • Low intermodulation distortion	Original	BLF147 MBB072 MLA876 OT121 BLF147 resistor gp series 71005 transistor d1 391 SOT121B SOT121 Package	PDF
FDV302P Abstract: No abstract text available Text: g A Ig g H IU D SEMICONDUCTOR tm FDV302P Digital FET, P-Channel General Description Features This P-Channel logic level enhanœmenî mode field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is	OCR Scan	FDV302P	PDF
BLW96 Abstract: No abstract text available Text: ].£.I±£.L ^zml-t-onauckoi iJ^iodueti, Line. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A,	Original	BLW96 OT121B BLW96	PDF
Untitled Abstract: No abstract text available Text: .O ne, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BLF147 VHP power MOS transistor PIN CONFIGURATION FEATURES • High power gain « Low intermodulation distortion • Easy power control • Good thermal stability	Original	BLF147 OT121 OT121B	PDF
BLF177 Abstract: No abstract text available Text: TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. HF/VHF power MOS transistor FEATURES BLF177 PIN CONFIGURATION • High power gain • Low intermodulation distortion • Easy power control • Good thermal stability	Original	BLF177 OT121 OT121B 10tnm BLF177	PDF
BLF177 Abstract: SOT121 Package 727 Transistor power values 2222 122 capacitor philips transistor marking code HF MGP100 2222 632 series capacitor 2222 852 47103 Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF177 HF/VHF power MOS transistor Product specification File under Discrete Semiconductors, SC08a September 1992 Philips Semiconductors Product specification HF/VHF power MOS transistor FEATURES BLF177 PIN CONFIGURATION	Original	BLF177 SC08a MBB072 MLA876 OT121 BLF177 SOT121 Package 727 Transistor power values 2222 122 capacitor philips transistor marking code HF MGP100 2222 632 series capacitor 2222 852 47103	PDF

SOT121 PACKAGE Search Results

SOT121 PACKAGE Result Highlights (5)

SOT121 PACKAGE Datasheets Context Search

Untitled

BLF246

sot123 package

SOT123 Package

sot123 package

T119 A

BLY93A

SOT123 Package

SOT123 Package

t123

BA101D

marking code 7Gs

Untitled

choke marking nb 03

SOT333

Untitled

BLF177

Philips 2222 capacitor

BLF147

FDV302P

BLW96

Untitled

BLF177

BLF177