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    SOT223 TRANSISTOR Search Results

    SOT223 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SOT223 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PZT2907

    Abstract: No abstract text available
    Text: 1.5W SOT223 BIPOLAR TRANSISTORS HIGH POWER TRANSISTORS SOT223 PACKAGE The latest comprehensive data to fully support these parts is readily available. SOT223 6.5 0°-7° 1.6 3.0 7.0 max 3.5 B C E 2.3 0.7 15° 15° 0.65 0.32 max 4.6 4.6 2.0 min 6.3 2.3 1.5 min


    Original     		PDF OT223 BCP54 BCP55 PZT2907

    ic tba 500

    Abstract: FZTA14 FZTA64 TBA 100
    Text: SOT223 PNP SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 5– MARCH 2001 ✪ PARTMARKING DETAILS: FZTA64 COMPLIMENTARY TYPE: FZTA14 FZTA64 4 3 2 1 SOT223 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emitter Voltage V CBO


    Original     		PDF OT223 FZTA64 FZTA14 OT223 100ms ic tba 500 FZTA14 FZTA64 TBA 100

    Untitled

    Abstract: No abstract text available
    Text: SOT223 NPN SILICON PLANAR DARLINGTON TRANSISTOR FZTA14 ISSUE 3 – JANUARY 1996 PARTMARKING DETAIL:- DEVICE TYPE IN FULL COMPLEMENTARY TYPE :- FZTA64 C E C B SOT223 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Emitter Voltage VCES Collector-Base Voltage


    Original     		PDF OT223 FZTA14 FZTA64 OT223 100mA, FMMT38C 20MHz

    design ideas

    Abstract: TS16949 ZXTN5551G ZXTP5401G
    Text: ZXTP5401G 150V, SOT223, PNP High voltage transistor Summary BVCEO > -150V BVEBO > -5V IC cont = -600mA PD = 2W Complementary part number ZXTN5551G Description C A high voltage PNP transistor in a surface mount package Features • 150V rating • SOT223 package


    Original     		PDF ZXTP5401G OT223, -150V -600mA ZXTN5551G OT223 ZXTP5401GTC ZXTP5401GTA D-81541 design ideas TS16949 ZXTN5551G ZXTP5401G

    Untitled

    Abstract: No abstract text available
    Text: ZXTP5401G 150V, SOT223, PNP High voltage transistor Summary BVCEO > -150V BVEBO > -5V IC cont = -600mA PD = 2W Complementary part number ZXTN5551G Description C A high voltage PNP transistor in a surface mount package Features • 150V rating • SOT223 package


    Original     		PDF ZXTP5401G OT223, -150V -600mA ZXTN5551G OT223 ZXTP5401GTA ZXTP5401GTC D-81541

    zxtP

    Abstract: Bv 42 transistor ZXTP2008GTA
    Text: ZXTP2008G 30V PNP LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -30V : RSAT = 31m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 30V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		PDF ZXTP2008G OT223 OT223 ZXTP2008GTA ZXTP2008GTC 522-ZXTP2008GTA ZXTP2008GTA zxtP Bv 42 transistor

    sot223 device Marking

    Abstract: transistor 355 ZX5T869G ZX5T869GTA ZX5T869GTC
    Text: ZX5T869G 25V NPN LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 25V : RSAT = 27m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in


    Original     		PDF ZX5T869G OT223 OT223 sot223 device Marking transistor 355 ZX5T869G ZX5T869GTA ZX5T869GTC

    ZXTP19100CG

    Abstract: ZXTP19100C TS16949 ZXTN19100CG ZXTP19100CGTA 30W dc motor current driver
    Text: ZXTP19100CG 100V PNP medium transistor in SOT223 Summary BVCEO > -100V BVECO > -7V IC cont = 2A VCE(sat) < -130mV @ -1A RCE(sat) = 100m⍀ PD = 3.0W Complementary part number ZXTN19100CG Description C Packaged in the SOT223 outline this new low saturation PNP transistor


    Original     		PDF ZXTP19100CG OT223 -100V -130mV ZXTN19100CG OT223 ZXTP19100CGTA D-81541 ZXTP19100CG ZXTP19100C TS16949 ZXTN19100CG ZXTP19100CGTA 30W dc motor current driver

    ZXTP25 20V 6A

    Abstract: ZXTP25020DG ZXTN25020DG TS16949 ZXTP25020DGTA
    Text: ZXTP25020DG 20V PNP high gain transistor in SOT223 Summary BVCEO > -20V BVECO > -4V IC cont = 6A VCE(sat) < -65mV @ -1A RCE(sat) = 42m⍀ PD = 3.0W Complementary part number ZXTN25020DG Description C Packaged in the SOT223 outline this new low saturation PNP transistor


    Original     		PDF ZXTP25020DG OT223 -65mV ZXTN25020DG OT223 ZXTP25020DGTA D-81541 ZXTP25 20V 6A ZXTP25020DG ZXTN25020DG TS16949 ZXTP25020DGTA

    sot223 transistor

    Abstract: partmarking 5 C PARTMARKING at FMMT38C FZTA14 FZTA64 DSA003719
    Text: SOT223 NPN SILICON PLANAR DARLINGTON TRANSISTOR FZTA14 ISSUE 3 – JANUARY 1996 PARTMARKING DETAIL:- DEVICE TYPE IN FULL COMPLEMENTARY TYPE :- FZTA64 C E C B SOT223 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Emitter Voltage VCES 30 V Collector-Base Voltage


    Original     		PDF OT223 FZTA14 FZTA64 OT223 100mA, FMMT38C 20MHz sot223 transistor partmarking 5 C PARTMARKING at FZTA14 FZTA64 DSA003719

    X5T949

    Abstract: sot223 transistor pinout ZX5T949G
    Text: ZX5T949G 30V PNP LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -30V : RSAT = 31m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 30V PNP transistor offers extremely low on state losses making it ideal for use in


    Original     		PDF ZX5T949G OT223 OT223 ZX5T949GTA X5T949 sot223 transistor pinout ZX5T949G

    ZXTP19060CG

    Abstract: TS16949 ZXTN19060CG ZXTP19060CGTA
    Text: ZXTP19060CG 60V PNP medium transistor in SOT223 Summary BVCEO > -60V BVECO > -7V IC cont = 5A VCE(sat) < -80mV @ -1A RCE(sat) = 50m⍀ PD = 3.0W Complementary part number ZXTN19060CG Description C Packaged in the SOT223 outline this new low saturation PNP transistor


    Original     		PDF ZXTP19060CG OT223 -80mV ZXTN19060CG OT223 ZXTP19060CGTA D-81541 ZXTP19060CG TS16949 ZXTN19060CG ZXTP19060CGTA

    ZXTN2005G

    Abstract: ZXTN2005GTA ZXTN2005GTC
    Text: ZXTN2005G 25V NPN LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 25V : RSAT = 30m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		PDF ZXTN2005G OT223 OT223 ZXTN2005G ZXTN2005GTA ZXTN2005GTC

    marking 8A sot223

    Abstract: TS16949 ZXTN19020DG ZXTP19020DG ZXTP19020DGTA
    Text: ZXTP19020DG 20V PNP high gain transistor in SOT223 Summary BVCEO > -20V BVECO > -4V IC cont = 8A VCE(sat) < -47mV @ -1A RCE(sat) = 28m⍀ PD = 3.0W Complementary part number ZXTN19020DG Description C Packaged in the SOT223 outline this new low saturation PNP transistor


    Original     		PDF ZXTP19020DG OT223 -47mV ZXTN19020DG OT223 ZXTP19020Dex D-81541 marking 8A sot223 TS16949 ZXTN19020DG ZXTP19020DG ZXTP19020DGTA

    zxtn

    Abstract: sot223 device Marking ZXTN2005GTC ZXTN2005G ZXTN2005GTA
    Text: ZXTN2005G 25V NPN LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 25V : RSAT = 30m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		PDF ZXTN2005G OT223 OT223 R26100 zxtn sot223 device Marking ZXTN2005GTC ZXTN2005G ZXTN2005GTA

    X5T955

    Abstract: "PNP Transistor" ZX5T955G ZX5T955GTA ZX5T955GTC
    Text: ZX5T955G 140V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -140V : RSAT = 92m ; IC = -4A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 140V PNP transistor offers extremely low on state losses making it ideal for use in


    Original     		PDF ZX5T955G OT223 -140V OT223 ZX5T955GTA ZX5T955GTC X5T955 "PNP Transistor" ZX5T955G ZX5T955GTA ZX5T955GTC

    ZXTN25020DG

    Abstract: TS16949 ZXTN25020DGTA ZXTP25020DG ON950 ZXTN25
    Text: ZXTN25020DG 20V NPN high gain transistor in SOT223 Summary BVCEX > 100V BVCEO > 20V BVECX > 6V IC cont = 7A VCE(sat) < 48mV @ 1A RCE(sat) = 31mΩ PD = 3.0W Complementary part number ZXTP25020DG Description C Packaged in the SOT223 outline this new low saturation NPN transistor


    Original     		PDF ZXTN25020DG OT223 ZXTP25020DG OT223 D-81541 ZXTN25020DG TS16949 ZXTN25020DGTA ZXTP25020DG ON950 ZXTN25

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN power transistor BDP31 FEATURES • SOT223 package. DESCRIPTION NPN power transistor in a plastic SOT223 package for general purpose, medium power applications. PNP complement is BDP32. PINNING - SOT223 PIN


    OCR Scan     		PDF OT223 BDP32. BDP31

    56359B

    Abstract: No abstract text available
    Text: MOUNTING INSTRUCTIONS Page SOT223 1140 SOT186; SOT263; T0220AB 1152 Philips Semiconductors Mounting instructions SOT223 TAPE and REEL PACKING SOT223 Tape and reel packing meets the feed requirements of automatic pick and place equipment (packing conforms


    OCR Scan     		PDF OT223 OT186; OT263; T0220AB OT223 OT223) 56359B

    Untitled

    Abstract: No abstract text available
    Text: Philips Com ponents Datasheet status Product specification date of issue April 1991 BDS643/645/647/649/651 NPN silicon Darlington power transistors PINNING -SOT223 DESCRIPTION NPN epitaxial base transistors in a monolithic Darlington circuit in SOT223, intended for general


    OCR Scan     		PDF BDS643/645/647/649/651 -SOT223 OT223, BDS644/646/648/650/652. bbS3T31 0034bt bbS3T31 0034bl0 DQ34bll

    BDS201

    Abstract: USM35 BDS77 16Oi BDS203 BDS20 IEC134 UBB012
    Text: Philips Components Datasheet status Product specification date of issue April 1991 BDS201/203/77 NPN Silicon epitaxial base power transistors DESCRIPTION PINNING-SOT223 PIN NPN Silicon epitaxial base transistors in a miniature SMD envelope SOT223 intended for general


    OCR Scan     		PDF BDS201/203/77 OT223) BDS202/204/78. BDS201 BDS203 BDS77 034Scn USM35 16Oi BDS20 IEC134 UBB012

    TOP 948

    Abstract: BDS944 BDS946 BDS948 IEC134 MS80 T 948
    Text: Philips Components BDS944/946/948 Datasheet status Product specification date of issue April 1991 PNP Silicon epitaxial base power transistors PINNING - SOT223 DESCRIPTION PIN PNP silicon epitaxial base transistors in a miniature SMD envelope SOT223 intended for general


    OCR Scan     		PDF BDS944/946/948 OT223) BDS943/945/947. OT223 BDS944 BDS946 BDS948 TOP 948 IEC134 MS80 T 948

    m lc 945

    Abstract: BDS945 BDS943 BDS947 945 npn 947 smd
    Text: Philips Components Datasheet status Product specification date of issue April 1991 BDS943/945/947 NPN Silicon epitaxial base power transistors PINNING - SOT223 DESCRIPTION PIN 1 2 3 4 NPN silicon epitaxial base transistors in a miniature SMD envelope SOT223 intended for general


    OCR Scan     		PDF BDS943/945/947 OT223) BDS944/946/948. OT223 BDS943 BDS945 BDS947 m lc 945 945 npn 947 smd

    BDS77

    Abstract: BDS201 BDS203 IEC134 USM35
    Text: Philips Components Datasheet status Product specification date of issu* April 1991 BDS201/203/77 NPN Silicon epitaxial base power transistors DESCRIPTION PINNING - SOT223 PIN 1 2 3 4 NPN Silicon epitaxial base transistors in a miniature SMD envelope SOT223 intended for general


    OCR Scan     		PDF BDS201/203/77 OT223) BDS202/204/78. OT223 BDS201 BDS203 BDS77 IEC134 USM35