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    SOT23-5 MARKING 016 Search Results

    SOT23-5 MARKING 016 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy

    SOT23-5 MARKING 016 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2GM sot-23 transistor

    Abstract: marking code 1AM 2N3904 SOT-23 MARKING CODE bc857 to92 TRANSISTOR 1g sot23 npn pin configuration NPN transistor BC817 sot-23 TS560 1aM sot-23 transistor bc848 to 92 BC848 e BC818
    Text: BC807, BC808 Small Signal Transistors PNP FEATURES ♦ PNP Silicon Epitaxial Planar Transistors SOT-23 .122 (3.1) .118 (3.0) .016 (0.4) Top View ♦ Especially suited for automatic insertion .056 (1.43) .052 (1.33) 3 in thick- and thin-film circuits. ♦ These transistors are subdivided into three groups -16,


    Original     		PDF BC807, BC808 OT-23 BC817 BC818 OT-23 2GM sot-23 transistor marking code 1AM 2N3904 SOT-23 MARKING CODE bc857 to92 TRANSISTOR 1g sot23 npn pin configuration NPN transistor BC817 sot-23 TS560 1aM sot-23 transistor bc848 to 92 BC848 e BC818

    s72 sot 23

    Abstract: No abstract text available
    Text: BS870 DMOS Transistors N-Channel FEATURES SOT-23 ♦ ♦ ♦ ♦ ♦ ♦ .122 (3.1) .118 (3.0) .016 (0.4) Top View .016 (0.4) .045 (1.15) .037 (0.95) .037(0.95) .037(0.95) .007 (0.175) .005 (0.125) 2 max. .004 (0.1) 1 .056 (1.43) .052 (1.33) 3 .102 (2.6)


    Original     		PDF BS870 OT-23 OT-23 BS850 s72 sot 23

    bav99 marking

    Abstract: Diode SOT-23 marking Jf
    Text: BAL99, BAV99 Small Signal Diodes Features SOT-23 .122 3.1 .110 (2.8) .016 (0.4) • Silicon Epitaxial Planar Diode • Fast switching diodes, especially suited for automatic insertion • This diode is also available in other configurations including a dual common anode with type


    Original     		PDF BAL99, BAV99 OT-23 BAW56 OT-23 BAL99 bav99 marking Diode SOT-23 marking Jf

    Diode SOT-23 marking JE

    Abstract: SOT23 JE BAV99 application BAV99 SOT 23 DATA SHEET SOT-23 bav99 BAL99 BAV99 BAW56 JE SOT23 marking je
    Text: BAL99, BAV99 Small Signal Diodes Features SOT-23 .122 3.1 .110 (2.8) .016 (0.4) • Silicon Epitaxial Planar Diode • Fast switching diodes, especially suited for automatic insertion • This diode is also available in other configurations including a dual common anode with type


    Original     		PDF BAL99, BAV99 OT-23 BAW56 OT-23 Diode SOT-23 marking JE SOT23 JE BAV99 application BAV99 SOT 23 DATA SHEET SOT-23 bav99 BAL99 BAV99 BAW56 JE SOT23 marking je

    SOT-23 a6

    Abstract: BAS16 SOT-23 016 SOT 23 A6 on
    Text: BAS16 Small Signal Diodes FEATURES SOT-23 ♦ Silicon Epitaxial Planar Diode .122 3.1 .118 (3.0) .016 (0.4) Top View especially suited for automatic insertion. .016 (0.4) .045 (1.15) .037 (0.95) .037(0.95) .037(0.95) .007 (0.175) .005 (0.125) 2 max. .004 (0.1)


    Original     		PDF BAS16 OT-23 OT-23, OT-23 OT-23) SOT-23 a6 BAS16 SOT-23 016 SOT 23 A6 on

    SOT 23 A6 on

    Abstract: SOT-23 marking 016 A6 sot-23 marking 08 sot-23 BAS16 SOT-23 marking a6
    Text: BAS16 Small Signal Diodes Features SOT-23 • Silicon Epitaxial Planar Diode • Fast switching diode in case SOT-23, especially suited for automatic insertion. .122 3.1 .110 (2.8) .016 (0.4) Top View .056 (1.43) .052 (1.33) 3 1 Mechanical Data Case: SOT-23 Plastic Package


    Original     		PDF BAS16 OT-23 OT-23, OT-23 OT-23) SOT 23 A6 on SOT-23 marking 016 A6 sot-23 marking 08 sot-23 BAS16 SOT-23 marking a6

    BAS40

    Abstract: BAS40-04 BAS40-05 BAS40-06
    Text: BAS40 THRU BAS40-06 Schottky Diodes FEATURES SOT-23 ♦ These diodes feature very low turn-on .122 3.1 .118 (3.0) .016 (0.4) ♦ These devices are protected by a PN .056 (1.43) .052 (1.33) 3 junction guard ring against excessive voltage, such as electrostatic discharges.


    Original     		PDF BAS40 BAS40-06 OT-23 OT-23 BAS40-04 BAS40 BAS40-05 BAS40-04 BAS40-05 BAS40-06

    DIODE marking 33

    Abstract: diode marking 74 BAS70 BAS70-04 BAS70-05 BAS70-06
    Text: BAS70 THRU BAS70-06 Schottky Diodes FEATURES SOT-23 ♦ These diodes feature very low turn-on .122 3.1 .118 (3.0) .016 (0.4) voltage and fast switching. Top View ♦ These devices are protected by a PN .056 (1.43) .052 (1.33) 3 .016 (0.4) .045 (1.15) .037 (0.95)


    Original     		PDF BAS70 BAS70-06 OT-23 OT-23 BAS70-04 BAS70 BAS70-05 DIODE marking 33 diode marking 74 BAS70-04 BAS70-05 BAS70-06

    BAS40

    Abstract: BAS40-04 BAS40-05 BAS40-06 43 MARKING
    Text: BAS40 thru BAS40-06 Vishay Semiconductors formerly General Semiconductor Schottky Diodes Features TO-236AB SOT-23 .122 (3.1) .110 (2.8) .016 (0.4) • These diodes feature very low turn-on voltage and fast switching. Top View • These devices are protected by a PN junction guard


    Original     		PDF BAS40 BAS40-06 O-236AB OT-23) OT-23 E8/10K 30K/box 8-May-02 BAS40-04 BAS40-05 BAS40-06 43 MARKING

    marking L42

    Abstract: BAT54 BAT54A BAT54C BAT54S
    Text: BAT54 THRU BAT54S Schottky Diodes FEATURES SOT-23 ♦ These diodes feature very low turn-on .122 3.1 .118 (3.0) .016 (0.4) ♦ These devices are protected by a PN .056 (1.43) .052 (1.33) 3 junction guard ring against excessive voltage, such as electrostatic discharges.


    Original     		PDF BAT54 BAT54S OT-23 OT-23 BAT54 BAT54A BAT54C marking L42 BAT54A BAT54C BAT54S

    diode 1N4148 sot-23

    Abstract: LL4148 SOT23 IMBD414-8
    Text: IMBD4148 Small-Signal Diode Mounting Pad Layout TO-236AB SOT-23 0.037 (0.95) 0.037 (0.95) .122 (3.1) .110 (2.8) .016 (0.4) Top View 0.079 (2.0) .056 (1.43) .052 (1.33) 3 1 0.035 (0.9) .016 (0.4) 0.031 (0.8) .016 (0.4) .045 (1.15) .037 (0.95) .007 (0.175)


    Original     		PDF IMBD4148 O-236AB OT-23) OT-23, DO-35 1N4148, LL4148, OD-123 1N4148W. diode 1N4148 sot-23 LL4148 SOT23 IMBD414-8

    SOT 23 marking code a6 diode

    Abstract: diode marking e8 BAS16 SOT 23 a6 diode SOT-23 marking E9
    Text: BAS16 Small-Signal Diode Features TO-236AB SOT-23 • Silicon Epitaxial Planar Diode • Fast switching diode in case SOT-23, especially suited for automatic insertion. .122 (3.1) .110 (2.8) .016 (0.4) Top View .056 (1.43) .052 (1.33) 3 1 .016 (0.4) .045 (1.15)


    Original     		PDF BAS16 O-236AB OT-23) OT-23, OT-23 E8/10K 30K/box SOT 23 marking code a6 diode diode marking e8 BAS16 SOT 23 a6 diode SOT-23 marking E9

    sot-23 MARKING CODE A6

    Abstract: SOT-23 marking 016 marking CODE box SOT23 SOT 23 marking code a6 diode
    Text: BAS16 Small-Signal Diode Features TO-236AB SOT-23 • Silicon Epitaxial Planar Diode • Fast switching diode in case SOT-23, especially suited for automatic insertion. .122 (3.1) .110 (2.8) .016 (0.4) Top View .056 (1.43) .052 (1.33) 3 1 Mechanical Data


    Original     		PDF BAS16 O-236AB OT-23) OT-23, OT-23 E8/10K 30K/box 30K/box 150mA sot-23 MARKING CODE A6 SOT-23 marking 016 marking CODE box SOT23 SOT 23 marking code a6 diode

    SOT 23 A6 on

    Abstract: BAS16 A6 SOT-23 SOT 23 marking code a6 diode
    Text: BAS16 Small-Signal Diode Features TO-236AB SOT-23 • Silicon Epitaxial Planar Diode • Fast switching diode in case SOT-23, especially suited for automatic insertion. .122 (3.1) .110 (2.8) .016 (0.4) Top View .056 (1.43) .052 (1.33) 3 1 Mechanical Data


    Original     		PDF BAS16 O-236AB OT-23) OT-23, OT-23 E8/10K 30K/box SOT 23 A6 on BAS16 A6 SOT-23 SOT 23 marking code a6 diode

    Untitled

    Abstract: No abstract text available
    Text: IMBD4448 Small-Signal Diode Mounting Pad Layout TO-236AB SOT-23 0.037 (0.95) 0.037 (0.95) .122 (3.1) .110 (2.8) .016 (0.4) Top View 0.079 (2.0) .056 (1.43) .052 (1.33) 3 1 0.035 (0.9) .016 (0.4) 0.031 (0.8) .016 (0.4) .045 (1.15) .037 (0.95) .007 (0.175)


    Original     		PDF IMBD4448 O-236AB OT-23) OT-23, DO-35 1N4448, LL4448, OD-123 1N4448W.

    1N4148 SOT-23

    Abstract: 1N4148 MARKING A2 1N4148 1N4148W IMBD4148 LL4148 1N4148 SOD-123 1N4148 sod123
    Text: IMBD4148 Small-Signal Diode Mounting Pad Layout TO-236AB SOT-23 0.031 (0.8) .122 (3.1) .110 (2.8) .016 (0.4) 0.035 (0.9) Top View .056 (1.43) .052 (1.33) 3 1 0.079 (2.0) 2 0.037 (0.95) .016 (0.4) .016 (0.4) .045 (1.15) .037 (0.95) .007 (0.175) .005 (0.125)


    Original     		PDF IMBD4148 O-236AB OT-23) OT-23, DO-35 1N4148, LL4148r 1N4148 SOT-23 1N4148 MARKING A2 1N4148 1N4148W IMBD4148 LL4148 1N4148 SOD-123 1N4148 sod123

    A8 diode sot-23

    Abstract: melf diode marking BAS21 SOD323 bav21 a82 BAS21 A82 MELF pad layout transistor A82 vishay melf BAS19 BAS21
    Text: BAS19 thru BAS21 Vishay Semiconductors formerly General Semiconductor Small-Signal Diodes Mounting Pad Layout 0.031 0.8 TO-236AB (SOT-23) 0.035 (0.9) .122 (3.1) .110 (2.8) .016 (0.4) Top View 0.079 (2.0) .056 (1.43) .052 (1.33) 3 1 Features .016 (0.4) .045 (1.15)


    Original     		PDF BAS19 BAS21 O-236AB OT-23) OT-23, OD-123 BAS19, BAS20, BAS21) A8 diode sot-23 melf diode marking BAS21 SOD323 bav21 a82 BAS21 A82 MELF pad layout transistor A82 vishay melf BAS21

    1N4148 SOD-123

    Abstract: 1N4148 SOT-23 1N4148 MELF pad layout General Semiconductor melf diode marking vishay melf 1N4148W IMBD4148 LL4148
    Text: IMBD4148 Vishay Semiconductors formerly General Semiconductor Small-Signal Diode Mounting Pad Layout TO-236AB SOT-23 0.031 (0.8) .122 (3.1) .110 (2.8) .016 (0.4) 0.035 (0.9) Top View .056 (1.43) .052 (1.33) 3 1 0.079 (2.0) 2 0.037 (0.95) .016 (0.4) .016 (0.4)


    Original     		PDF IMBD4148 O-236AB OT-23) OT-23, DO-35 14-May-02 1N4148 SOD-123 1N4148 SOT-23 1N4148 MELF pad layout General Semiconductor melf diode marking vishay melf 1N4148W IMBD4148 LL4148

    Untitled

    Abstract: No abstract text available
    Text: IMBD4448 Vishay Semiconductors formerly General Semiconductor Small-Signal Diode Mounting Pad Layout TO-236AB SOT-23 0.031 (0.8) .122 (3.1) .110 (2.8) .016 (0.4) 0.035 (0.9) Top View .056 (1.43) .052 (1.33) 3 1 0.079 (2.0) .016 (0.4) 0.037 (0.95) 0.037 (0.95)


    Original     		PDF IMBD4448 O-236AB OT-23) OT-23, DO-35 14-May-02

    General Semiconductor

    Abstract: melf diode marking vishay melf 1N4448 1N4448W IMBD4448 LL4448
    Text: IMBD4448 Vishay Semiconductors formerly General Semiconductor Small-Signal Diode Mounting Pad Layout TO-236AB SOT-23 0.031 (0.8) .122 (3.1) .110 (2.8) .016 (0.4) 0.035 (0.9) Top View .056 (1.43) .052 (1.33) 3 1 0.079 (2.0) .016 (0.4) 0.037 (0.95) 0.037 (0.95)


    Original     		PDF IMBD4448 O-236AB OT-23) OT-23, DO-35 14-May-02 General Semiconductor melf diode marking vishay melf 1N4448 1N4448W IMBD4448 LL4448

    Untitled

    Abstract: No abstract text available
    Text: BASI 6 Small Signal Diodes FEATURES SOT-23 •122 3.1 .118 (3 O') .016 (0.4) Top View r^i ♦ Silicon Epitaxial Planar Diode ♦ Fast switching diode in case SOT-23, especially suited for automatic inser­ tion. .037(0.95) .037(0.95) = n=Jrf .016 (0.4) •016(0.4)


    OCR Scan     		PDF OT-23 OT-23, OT-23 BAS16 OT-23)

    JXs sot

    Abstract: No abstract text available
    Text: BAS40 THRU BAS40-06 Schottky Diodes FEATURES SOT-23 •122 3.1 .118 (3.0) ♦ Top View .016 (0.4) These diodes feature very low turn-on voltage and fast switching. ♦ These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.


    OCR Scan     		PDF BAS40 BAS40-06 OT-23 OT-23 BAS40-04 BAS40 BAS40-05 JXs sot

    Untitled

    Abstract: No abstract text available
    Text: BAT54 THRU BAT54S Schottky Diodes FEATURES SOT-23 •122 3.1 .118 (3.0) .016 (0.4) These diodes feature very low turn-on voltage and fast switching. Top View These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic dis­


    OCR Scan     		PDF BAT54 BAT54S OT-23 BAT54 BAT54A OT-23 BAT54C

    BSN20 MARKING

    Abstract: BSN20
    Text: G en era l \J S e m i c o n d u c t o r _ BSN20 N-Channel Enhancement-Mode MOSFET % Vds 5 0 V RdS ON 6 f i Id 1 8 0 m A TO-236AB (SOT-23) •122(3.1) .110(2.8) 0.031 (0.8) .016 (0.4) T o p V ie w R+ 1— co m 0 035 (0.9) CO in m o o Pin Configuration


    OCR Scan     		PDF BSN20 O-236AB OT-23) OT-23 OT-23, S0T-23-6L BSN20 MARKING BSN20