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    SOT23-5 TRANSISTOR T1 Search Results

    SOT23-5 TRANSISTOR T1 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    SOT23-5 TRANSISTOR T1 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BFR93

    Abstract: BFR91 BFT93 choke 3122 108 20150 ScansUX40 transistor bfr93 TRANSISTOR B47
    Text: Philips Semiconductors 711002t D D b 'iim T3Û PH I N Product specification NPN 5 G Hz w ideband transistor DESCRIPTION £ BFR93 PINNING NPN transistor in a plastic SOT23 envelope primarily intended for use in RF amplifiers and oscillators. The transistor features very low


    OCR Scan     		711005t BFR93 ON4186) BFT93. 711002b BFR91 BFT93 choke 3122 108 20150 ScansUX40 transistor bfr93 TRANSISTOR B47 PDF

    8115, transistor

    Abstract: BFR106 0482 transistor SD-1H 702 P TRANSISTOR
    Text: P hilipsSemiconducìors M 7 1 1 D fl2 b D O b ^ ltib EDÔ H P H IN Product specification NPN 5 GHz wideband transistor DESCRIPTION c BFR106 PINNING NFN silicon planar epitaxial transistor in a plastic SOT23 envelope. It is primarily intended for low noise, general RF applications.


    OCR Scan     		711Dfl2b BFR106 MS6003 8115, transistor 0482 transistor SD-1H 702 P TRANSISTOR PDF

    PMV20EN

    Abstract: No abstract text available
    Text: SO T2 3 PMV20EN 30 V, N-channel Trench MOSFET 5 June 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PMV20EN O-236AB) PMV20EN PDF

    NXP SMD diode MARKING CODE

    Abstract: No abstract text available
    Text: SO T2 3 PMV20XN 30 V, 4.8 A N-channel Trench MOSFET Rev. 1 — 5 April 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using


    Original     		PMV20XN O-236AB) NXP SMD diode MARKING CODE PDF

    PNP Epitaxial Silicon Transistor sot-23

    Abstract: BCX17 BCX19
    Text: BCX17 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking BCX17 T1 SILICON EPITAXIAL PLANAR PNP TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS BCX19 APPLICATIONS


    Original     		BCX17 OT-23 BCX19 OT-23 PNP Epitaxial Silicon Transistor sot-23 BCX17 BCX19 PDF

    BCX17

    Abstract: BCX19 PR SOT23 TRANSISTOR a 1102
    Text: BCX17 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA Type Marking BCX17 T1 SILICON EPITAXIAL PLANAR PNP TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS BCX19 • ■ ■ ■ APPLICATIONS


    Original     		BCX17 OT-23 BCX19 OT-23 BCX17 BCX19 PR SOT23 TRANSISTOR a 1102 PDF

    2sc3052ef

    Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
    Text: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		24GHz BF517 B132-H8248-G5-X-7600 2sc3052ef 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor PDF

    C2 6 zener diode

    Abstract: Transistor AND DIODE Equivalent list diode ZENER C2 zener diode c12 zener 18v sot23 Zener Diode C3 4 Zener Diode C3 5 diode zener c2 6 2n3906 equivalent transistor 5v 1a ZENER DIODE
    Text: 12/16/98 - LHS -18V to -24V input to +5V/350mA, +3.3V/150mA, -6V/6mA, -24V/30mA, -85V/1mA Unisolated Outputs T1 Winding #1 Primary 90uH, 1.2 Amp peak C1 47uF 35V D1 C2 100uF R4 10 9 8 VCC CS+ 10 1 C5 0.22 4 R1 18k Q1 6 1 R3 0.082 Q2 U1 PGND 7 MAX668 5 3


    Original     		V/350mA, V/150mA, -24V/30mA, -85V/1mA 100uF MAX668 150mA 350mA OT-23 BZX84C43 C2 6 zener diode Transistor AND DIODE Equivalent list diode ZENER C2 zener diode c12 zener 18v sot23 Zener Diode C3 4 Zener Diode C3 5 diode zener c2 6 2n3906 equivalent transistor 5v 1a ZENER DIODE PDF

    irf 3905

    Abstract: 680k ohm resistor 470uf 40v cap CAPACITOR 47UF 25V ELECTROLYTIC 1k ohm, 0.25w resistor NPN transistor 2n 3904 EF12.6 100uF 25V Electrolytic Capacitor transistor 2N 3904 usb modem
    Text: USB Modem 4.5V to 5.5V INPUT C2 1uF 10V 9 R1 680k 2 D1 CMPSH-3 16 IN 15 VL ILIM BST COMP DH 14 13 C4 10uF 10V C3 0.1uF R3 4.7 N1A 1/2 IRF 7301 12 C1 5.6nF LX DL VL GND U1 MAX1864T R2 100k OUT 1 POK FB 3.1V@ 400mA 1,2 R4 4.7 11 T1 1:1:3 Lpri=22.8uH 9,10 C10


    Original     		MAX1864T 400mA 470uF CMPT3904 100mVpp SG7-0057 MAX1864TEEE 16-QSOP) 25mVpp irf 3905 680k ohm resistor 470uf 40v cap CAPACITOR 47UF 25V ELECTROLYTIC 1k ohm, 0.25w resistor NPN transistor 2n 3904 EF12.6 100uF 25V Electrolytic Capacitor transistor 2N 3904 usb modem PDF

    SANYO 1000uF 16V CA

    Abstract: SANYO 220uF 16V 220UF 16V 220uF 16V Electrolytic Capacitor 220uf 16v capacitor 150pf ceramic capacitor 220uF/16v electrolytic capacitor 0401 transistor 47uf, 16v electrolytic capacitor 6930A
    Text: WLL Terminal C4 1uF 10V 24V INPUT C3 4.7uF 35V 13 R1 130k C1 22nF 2 C6 220uF 35V CA D1 CMPSH-3 20 VP ILIM 19 VL BST COMP DH 17 16 C2 220pF C7 4.7uF 35V T1 1:1:2 Lpri = 22.8uH VP2-0116 18 LX C5 0.1uF N1A 1/2 NDS 6930A R3 4.7 11,12 DL VL GND U1 MAX1865T R2 100k


    Original     		220uF 220pF VP2-0116 MAX1865T 1000uF 800mA EC21QS06 KSH30 SANYO 1000uF 16V CA SANYO 220uF 16V 220UF 16V 220uF 16V Electrolytic Capacitor 220uf 16v capacitor 150pf ceramic capacitor 220uF/16v electrolytic capacitor 0401 transistor 47uf, 16v electrolytic capacitor 6930A PDF

    Zener Diode 3v 400mW

    Abstract: transistor bc548b BC107 transistor TRANSISTOR bc108 bc547 cross reference chart Transistor BC109 DIAC OB3 DIAC Br100 74HCT IC family spec TRANSISTOR mosfet BF998
    Text: INDEX Order Code Description Page Number – Philips Semiconductors 1 485-068 DS750 Development Kit 1 527-749 87C750 Hardware Kit 1 – Philips Semiconductors Data Communications UART Product Line 2 790-590 80C51 In a Box 3 – 80C51 Family Features 3 –


    Original     		DS750 87C750 80C51 PZ3032-12A44 BUK101-50GS BUW12AF BU2520AF 16kHz BY328 Zener Diode 3v 400mW transistor bc548b BC107 transistor TRANSISTOR bc108 bc547 cross reference chart Transistor BC109 DIAC OB3 DIAC Br100 74HCT IC family spec TRANSISTOR mosfet BF998 PDF

    BCX17

    Abstract: BCX17R BCX19
    Text: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BCX17 ISSUE 4 – MARCH 2001 PARTMARKING DETAILS – BCX17 BCX17R COMPLIMENTARY TYPES - – T1 – T4 E C BCX19 B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Emitter Voltage V CES -50


    Original     		BCX17 BCX17R BCX19 -10mA) -500mA, -50mA* -10mA, 35MHz BCX17 BCX17R BCX19 PDF

    BB 509 varicap diode

    Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe
    Text: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


    Original     		PDF

    JST SOT-23

    Abstract: smd transistor l6 smd transistor 2y R135 VARISTOR 103 resistor pack diode zener c55 2Y DIODE SMD DIODE SMD J9 transistor c114 diode zener c72
    Text: BOM STEVAL-ISS001V1 PART TYPE 1 DIODE SMD BAS16 SOT23 2 RESISTOR SMD 1K 1% 0.125W 100PPM PACK. 0805 3 RESISTOR SMD 2K2 1% 0.125W 100PPM PACK. 0805 4 RESISTOR SMD 3K3 1% 0.125W 100PPM PACK. 0805 5 RESISTOR SMD 4K7 1% 0.125W 100PPM PACK. 0805 6 RESISTOR SMD 10K 1% 0.125W 100PPM PACK. 0805


    Original     		STEVAL-ISS001V1 BAS16 100PPM JST SOT-23 smd transistor l6 smd transistor 2y R135 VARISTOR 103 resistor pack diode zener c55 2Y DIODE SMD DIODE SMD J9 transistor c114 diode zener c72 PDF

    SMD TRANSISTOR L6

    Abstract: transistor SMD Y1 y1 smd transistor SMD TRANSISTOR Y1 1P smd transistor y2 smd transistor resistor smd 103 transistor smd R55 transistor smd j6 L6 smd transistor
    Text: BOM STEVAL-ISS001V2 PART TYPE QUANT ITY QTY DESIGNATOR D3, D4, D5, D6, D7, D8, D9, D10, D11, D12, D13, D14, D15, D16, D17, D18, D19, D20, 22 QTY D21, D22, D23, D24 1 DIODE SMD BAS16 SOT23 2 RESISTOR SMD 1K 1% 0.125W 100PPM OBUD. 0805 5 QTY R26, R37, R38, R154, R155


    Original     		STEVAL-ISS001V2 BAS16 100PPM 330UH 12X9MM UBB-4R-D10T-1 SMD TRANSISTOR L6 transistor SMD Y1 y1 smd transistor SMD TRANSISTOR Y1 1P smd transistor y2 smd transistor resistor smd 103 transistor smd R55 transistor smd j6 L6 smd transistor PDF

    UPC8236

    Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
    Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: / I T SGS-TTIOMSON ^ 7 # RüiDieœiiLiCTi^omei BCX17 SMALL SIGNAL PNP TRANSISTOR Type Marking BCX17 T1 . SILICON EPITAXIAL PLANAR PNP TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . MEDIUM CURRENT AF AMPLIFICATION AND SWITCHING


    OCR Scan     		BCX17 BCX19 OT-23 SC06810 OT-23 PDF

    transistor 20107

    Abstract: transistor dk 50 PCD5042 bfg520w vco application note BFG591 Application Notes DK 51* transistor bfg520 antenna preamplifier BP547 bfg135 application note MPSH10 small amplifier
    Text: TARGET SYSTEMS PRODUCTS Function Type Description Cellular N AMPS /{E> TACS IS-54/-136 TDMA IS—95 CDMA Cordless GSM DCS1800 PCS PDC RF Amplifiers { SA5200 CTO CT1 SS X X Wireless Data DECT PHS 802.11 CDPD X X Gain block-1 GHZ PAGERS RF Front End SA611 1 GHz low voli LNA and mixer


    OCR Scan     		SA5200 SA611 SA2420 SA621 SA1620 SA1921 UAA2073 UAA2077AM UAA2077BM UAA2077CM transistor 20107 transistor dk 50 PCD5042 bfg520w vco application note BFG591 Application Notes DK 51* transistor bfg520 antenna preamplifier BP547 bfg135 application note MPSH10 small amplifier PDF

    MPSH10 fairchild transistor

    Abstract: MPSH10 MMBTH10 Spice Model transistor top mark 3E L transistor bel 100 CBVK741B019 F63TNR MMBTH10 PN2222N TRANSISTOR C 3223
    Text: MPSH10 / MMBTH10 MPSH10 MMBTH10 C E C E TO-92 B B SOT-23 Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency


    Original     		MPSH10 MMBTH10 MPSH10 OT-23 MPSH10 fairchild transistor MMBTH10 Spice Model transistor top mark 3E L transistor bel 100 CBVK741B019 F63TNR MMBTH10 PN2222N TRANSISTOR C 3223 PDF

    CBVK741B019

    Abstract: F63TNR MMBTH10 MPSH10 PN2222N PAP transistor power high frequency transistor bel 100 rf transistor mark code H1
    Text: MPSH10 / MMBTH10 MPSH10 MMBTH10 C E C E TO-92 B B SOT-23 Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency


    Original     		MPSH10 MMBTH10 MPSH10 OT-23 CBVK741B019 F63TNR MMBTH10 PN2222N PAP transistor power high frequency transistor bel 100 rf transistor mark code H1 PDF

    PN5179

    Abstract: CBVK741B019 F63TNR MMBT5179 MPS5179 PN2222N TRANSISTOR C 3223 MJC2
    Text: PN5179 MMBT5179 C E C B TO-92 SOT-23 E C B E Mark: 3C TO-92 B NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 µA to 30 mA range in common emitter or common base mode of operation, and in low frequency


    Original     		PN5179 MMBT5179 OT-23 PN5179 CBVK741B019 F63TNR MMBT5179 MPS5179 PN2222N TRANSISTOR C 3223 MJC2 PDF

    Untitled

    Abstract: No abstract text available
    Text: PN918 / MMBT918 MMBT918 PN918 C E C B TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*


    Original     		PN918 MMBT918 PN918 OT-23 PDF

    CBVK741B019

    Abstract: F63TNR MMBTH20 MPSH20 PN2222N Q100 transistor mark code t1 Ohmite RF Z-235 MPS-H20
    Text: MPSH20 / MMBTH20 MPSH20 MMBTH20 C E C B TO-92 E B SOT-23 Mark: 3L NPN RF Transistor This device is designed for general RF amplifier and mixer applications to 250 MHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 49. Absolute Maximum Ratings*


    Original     		MPSH20 MMBTH20 MPSH20 OT-23 CBVK741B019 F63TNR MMBTH20 PN2222N Q100 transistor mark code t1 Ohmite RF Z-235 MPS-H20 PDF

    MPSH10 s parameters

    Abstract: No abstract text available
    Text: MPSH10 / MMBTH10 MPSH10 MMBTH10 C E C E TO-92 B B SOT-23 Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency


    Original     		MPSH10 MMBTH10 MPSH10 OT-23 MPSH10 s parameters PDF