PBSS9110Y
Abstract: No abstract text available
Text: PBSS9110Y 100 V, 1 A PNP low VCEsat BISS transistor Rev. 02 — 22 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat transistor in a SOT363 (SC-88) plastic package. 1.2 Features SOT363 package Low collector-emitter saturation voltage VCEsat
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PBSS9110Y
OT363
SC-88)
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PBSS9110Y
Abstract: No abstract text available
Text: PBSS9110Y 100 V, 1 A PNP low VCEsat BISS transistor Rev. 01 — 9 June 2004 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat transistor in a SOT363 (SC-88) plastic package. 1.2 Features • ■ ■ ■ SOT363 package Low collector-emitter saturation voltage VCEsat
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PBSS9110Y
OT363
SC-88)
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PBSS9110Y
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PBSS8110Y
Abstract: PPBSS8110Y
Text: PBSS8110Y 100 V, 1 A NPN low VCEsat BISS transistor Rev. 01 — 2 June 2004 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat transistor in a SOT363 (SC-88) plastic package. 1.2 Features • ■ ■ ■ SOT363 package Low collector-emitter saturation voltage VCEsat
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PBSS8110Y
OT363
SC-88)
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C 102 transistor equivalent table
Abstract: PBSS8110Y PPBSS8110Y
Text: PBSS8110Y 100 V, 1 A NPN low VCEsat BISS transistor Rev. 02 — 21 November 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat transistor in a SOT363 (SC-88) plastic package. 1.2 Features SOT363 package Low collector-emitter saturation voltage VCEsat
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PBSS8110Y
OT363
SC-88)
OT363
PBSS8110Y
C 102 transistor equivalent table
PPBSS8110Y
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Untitled
Abstract: No abstract text available
Text: PBSS9110Y 100 V, 1 A PNP low VCEsat BISS transistor Rev. 02 — 22 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat transistor in a SOT363 (SC-88) plastic package. 1.2 Features ̈ ̈ ̈ ̈ SOT363 package Low collector-emitter saturation voltage VCEsat
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PBSS9110Y
OT363
SC-88)
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Untitled
Abstract: No abstract text available
Text: PBSS8110Y 100 V, 1 A NPN low VCEsat BISS transistor Rev. 02 — 21 November 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat transistor in a SOT363 (SC-88) plastic package. 1.2 Features ̈ ̈ ̈ ̈ SOT363 package Low collector-emitter saturation voltage VCEsat
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PBSS8110Y
OT363
SC-88)
OT363
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sot363 wave soldering
Abstract: No abstract text available
Text: Wave soldering footprint Footprint information for wave soldering of plastic surface-mounted package; 6 leads SOT363 1.5 0.3 2.5 4.5 1.5 1.3 1.3 2.45 5.3 preferred transport direction during soldering solder land solder resist occupied area Dimensions in mm
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OT363
sot363
sot363 wave soldering
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Untitled
Abstract: No abstract text available
Text: CSH210R ? TX-RX and diversity switch for mobile communications ? GaAs PHEMT Technology ? Low Insertion Loss ? No Supply Voltage Needed ? Positive Control Voltage ? SOT363 Package 2mm x 2mm ESD: Electrostatic discharge sensitive device Observe handling Precautions!
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CSH210R
OT363
Q62705K
OT363
30dbm
CSH210R
csh210
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CSH210
Abstract: No abstract text available
Text: CSH210 ? TX-RX and diversity switch for mobile communications ? GaAs PHEMT Technology ? Low Insertion Loss ? No Supply Voltage Needed ? Positive Control Voltage ? SOT363 Package 2mm x 2mm ESD: Electrostatic discharge sensitive device Observe handling Precautions!
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CSH210
OT363
Q62705K
OT363
30dbm
CSH210
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SC-70-6
Abstract: Ao7417
Text: AO7417 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO7417/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.5V, in the small SOT363 footprint. This device is suitable for
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AO7417
AO7417/L
OT363
AO7417
AO7417L
-AO7417L
SC-70-6
OT-363)
100ms
SC-70-6
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AO7401
Abstract: No abstract text available
Text: AO7401 30V P-Channel MOSFET General Description Product Summary The AO7401 uses advanced trench technology to provide excellent RDS ON , low gate charge, and operation with gate voltages as low as 2.5V, in the small SOT363 footprint. It can be used for a wide
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AO7401
AO7401
OT363
SC-70
OT-323)
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AO7415
Abstract: AO7415L SC-70-6
Text: AO7415 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO7415 uses advanced trench technology to provide excellent RDS ON , low gate charge, and operation with gate voltages as low as 2.5V, in the small SOT363 footprint. It can be used for a wide
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AO7415
AO7415
OT363
AO7415L
SC-70-10
SC-70-6
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Untitled
Abstract: No abstract text available
Text: AO7417 20V P-Channel MOSFET General Description Product Summary The AO7417 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.5V, in the small SOT363 footprint. This device is suitable for use in buck convertor.
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AO7417
AO7417
OT363
SC-70-6
OT-323)
1E-05
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AO7405
Abstract: SC706
Text: AO7405 30V P-Channel MOSFET General Description Product Summary VDS The AO7405 uses advanced trench technology to provide excellent RDS ON , low gate charge, and operation with gate voltages as low as 2.5V, in the small SOT363 footprint. It can be used for a wide
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AO7405
AO7405
OT363
SC70-6L
OT363)
SC706
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MSD901
Abstract: 10939
Text: PMGD8000LN Dual µTrenchMOS logic level FET Rev. 01 — 27 February 2003 MBD128 Product data 1. Description Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMGD8000LN in SOT363 SC-88 .
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PMGD8000LN
MBD128
PMGD8000LN
OT363
SC-88)
MSA370
771-PMGD8000LN-T/R
MSD901
10939
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smd diode marking A3 sot363
Abstract: sot363 aaa
Text: BAT754L Schottky barrier triple diode 22 November 2012 Product data sheet 1. Product profile 1.1 General description Three internal isolated planar Schottky barrier diodes with an integrated guard ring for stress protection,encapsulated in very small SOT363 Surface-Mounted Device SMD
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BAT754L
OT363
AEC-Q101
smd diode marking A3 sot363
sot363 aaa
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AO7405
Abstract: AO7405L SC-70-6 SOT363 footprint
Text: AO7405 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO7405 uses advanced trench technology to provide excellent RDS ON , low gate charge, and operation with gate voltages as low as 2.5V, in the small SOT363 footprint. It can be used for a wide
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AO7405
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OT363
AO7405L
SC-70-6
OT-363)
SC-70-6
SOT363 footprint
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M1305
Abstract: AO7415 AO7415L SC-70-6 m-1305
Text: AO7415 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO7415 uses advanced trench technology to provide excellent RDS ON , low gate charge, and operation with gate voltages as low as 2.5V, in the small SOT363 footprint. It can be used for a wide
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AO7415
AO7415
OT363
AO7415L
SC-70-
M1305
SC-70-6
m-1305
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Untitled
Abstract: No abstract text available
Text: AO7417 20V P-Channel MOSFET General Description Product Summary The AO7417 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.5V, in the small SOT363 footprint. This device is suitable for use in buck convertor.
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OT363
SC-70-6
OT-323)
1E-05
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259 sot363
Abstract: AO7405 AO7405L SC-70-6
Text: AO7405 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO7405 uses advanced trench technology to provide excellent RDS ON , low gate charge, and operation with gate voltages as low as 2.5V, in the small SOT363 footprint. It can be used for a wide
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AO7405
AO7405
OT363
AO7405L
SC-70-6
OT-363)
259 sot363
SC-70-6
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Untitled
Abstract: No abstract text available
Text: Reflow soldering footprint Footprint information for reflow soldering of plastic surface-mounted package; 6 leads SOT363 2.65 2.35 1.5 0.4 2x 0.6 0.5 (4×) (4×) 0.5 (4×) 0.6 (2×) 0.6 (4×) 1.8 solder land solder land plus solder paste solder paste deposit
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mmic code marking P 18
Abstract: MMIC marking CODE 06 rf mmic marking code 09 SOT363 CSH210 rf mmic marking code 26 SOT363
Text: GaAs MMIC CSH210 Preliminary Datasheet • TX-RX and diversity switch for mobile communications • GaAs PHEMT Technology • Low Insertion Loss • No supply Voltage needed • Positive Operating voltage • SOT363 package 2mm x 2mm ESD: Electrostatic discharge sensitive device
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CSH210
mmic code marking P 18
MMIC marking CODE 06
rf mmic marking code 09 SOT363
rf mmic marking code 26 SOT363
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k1 nxp
Abstract: No abstract text available
Text: BAT74S Dual Schottky barrier diode 22 November 2012 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier dual diode with an integrated guard ring for stress protection. Two electrically isolated Schootky barrier diodes encapsulated in a very small SOT363
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BAT74S
OT363
SC-88)
AEC-Q101
300gal
k1 nxp
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CSH210
Abstract: No abstract text available
Text: CSH210 • TX-RX and diversity switch for mobile communications • GaAs PHEMT Technology • Low Insertion Loss • No Supply Voltage Needed • Positive Control Voltage • SOT363 Package 2mm x 2mm ESD: Electrostatic discharge sensitive device Observe handling Precautions!
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