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    SOT669 PACKAGE Search Results

    SOT669 PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    SOT669 PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sot669

    Abstract: PH3230
    Text: PH3230 N-channel enhancement mode field-effect transistor M3D748 Rev. 01 — 7 February 2002 Product data 1. Description The latest generation N-channel enhancement mode field-effect power transistor in a SOT669 LFPAK package. Product availability: PH3230 in SOT669 (LFPAK)


    Original     		PDF PH3230 M3D748 OT669 PH3230 sot669

    PH3230

    Abstract: SOT669-LFPAK sot669 package
    Text: PH3230 N-channel enhancement mode field-effect transistor M3D748 Rev. 03 — 25 June 2003 Product data 1. Description The latest generation N-channel enhancement mode field-effect power transistor in a SOT669 LFPAK package. Product availability: PH3230 in SOT669 (LFPAK).


    Original     		PDF PH3230 M3D748 OT669 PH3230 SOT669-LFPAK sot669 package

    LFPAK footprint

    Abstract: PH2920 sot669 lfpak
    Text: PH2920 N-channel enhancement mode field-effect transistor M3D748 Rev. 01 — 13 June 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a SOT669 LFPAK package. Product availability: PH2920 in SOT669 (LFPAK).


    Original     		PDF PH2920 M3D748 OT669 PH2920 LFPAK footprint sot669 lfpak

    PH3230

    Abstract: No abstract text available
    Text: PH3230 N-channel enhancement mode field-effect transistor M3D748 Rev. 02 — 5 September 2002 Product data 1. Description The latest generation N-channel enhancement mode field-effect power transistor in a SOT669 LFPAK package. Product availability: PH3230 in SOT669 (LFPAK).


    Original     		PDF PH3230 M3D748 OT669 PH3230

    sot669

    Abstract: PH5330 09391
    Text: PH5330 N-channel enhancement mode field-effect transistor M3D748 Rev. 01 — 07 February 2002 Product data 1. Description The latest generation N-channel enhancement mode field-effect power transistor in a SOT669 LFPAK package. Product availability: PH5330 in SOT669 (LFPAK)


    Original     		PDF PH5330 M3D748 OT669 PH5330 sot669 09391

    SOT669

    Abstract: sot669 package PH5330
    Text: PH5330 N-channel enhancement mode field-effect transistor M3D748 Rev. 02 — 18 July 2003 Product data 1. Description N-channel enhancement mode field-effect power transistor in a SOT669 LFPAK package. Product availability: PH5330 in SOT669 (LFPAK). 2. Features


    Original     		PDF PH5330 M3D748 OT669 PH5330 SOT669 sot669 package

    PH8230

    Abstract: MO-235 FOOTPRINT LFPAK package
    Text: PH8230 N-channel enhancement mode field-effect transistor M3D748 Rev. 01 — 23 June 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a SOT669 LFPAK package. Product availability: PH8230 in SOT669 (LFPAK).


    Original     		PDF PH8230 M3D748 OT669 PH8230 MO-235 FOOTPRINT LFPAK package

    110-78

    Abstract: sot669 PH3230S PH323
    Text: PH3230S N-channel TrenchMOS logic level FET M3D748 Rev. 01 — 12 February 2003 Preliminary data 1. Description The latest generation N-channel enhancement mode field-effect power transistor in a SOT669 LFPAK package. Product availability: PH3230S in SOT669 (LFPAK).


    Original     		PDF PH3230S M3D748 OT669 PH3230S MBB076 110-78 sot669 PH323

    sot669

    Abstract: PH5330E 12334
    Text: PH5330E TrenchMOS enhanced logic level FET Rev. 01 — 09 January 2004 M3D748 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a SOT669 LFPAK package using TrenchMOS™ technology. 1.2 Features


    Original     		PDF PH5330E M3D748 OT669 sot669 PH5330E 12334

    PHPT60603NY

    Abstract: No abstract text available
    Text: LF PA K 56 PHPT60603NY 60V, 3 A NPN high power bipolar transistor 13 December 2013 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60603PY


    Original     		PDF PHPT60603NY OT669 LFPAK56) PHPT60603PY AECQ-101 PHPT60603NY

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 PHPT60603PY 60 V, 3 A PNP high power bipolar transistor 13 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60603NY.


    Original     		PDF PHPT60603PY OT669 LFPAK56) PHPT60603NY. AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: PH8230E TrenchMOS enhanced logic level FET Rev. 01 — 04 March 2003 M3D748 Preliminary data 1. Product profile 1.1 Description The latest generation N-channel enhancement mode field-effect power transistor in a SOT669 LFPAK package using TrenchMOS™ technology.


    Original     		PDF PH8230E M3D748 OT669 PH8230E

    PH2520U

    Abstract: 11406
    Text: PH2520U TrenchMOS ultra low level FET Rev. 01 — 02 May 2003 M3D748 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology. Product availability: PH2520U in SOT669 LFPAK .


    Original     		PDF PH2520U M3D748 PH2520U OT669 11406

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 PHPT61002PYC 100 V, 2 A PNP high power bipolar transistor 10 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61002NYC.


    Original     		PDF PHPT61002PYC OT669 LFPAK56) PHPT61002NYC.

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 PHPT61003PY 100 V, 3A PNP high power bipolar transistor 13 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61003NY


    Original     		PDF PHPT61003PY OT669 LFPAK56) PHPT61003NY AEC-Q101

    sot669 footprint

    Abstract: No abstract text available
    Text: LF PA K 56 PHPT60603NY 60V, 3 A NPN high power bipolar transistor 10 January 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60603PY


    Original     		PDF PHPT60603NY OT669 LFPAK56) PHPT60603PY AECQ-101 sot669 footprint

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 PHPT61002NYC 100V, 2 A NPN high power bipolar transistor 9 January 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61002PYC


    Original     		PDF PHPT61002NYC OT669 LFPAK56) PHPT61002PYC

    sot669 package

    Abstract: No abstract text available
    Text: PA K SOT669 LF LFPAK; Tape reel SMD; standard product orientation 12NC ending 115 Rev. 1 — 26 November 2012 Packing information 1. Packing method Printed plano box Barcode label Reel Tape Barcode label Circular sprocket holes opposite the label side of reel


    Original     		PDF OT669 msc074 12Narrier sot669 package

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 PHPT61003NY 100 V, 3 A NPN high power bipolar transistor 13 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61003NY


    Original     		PDF PHPT61003NY OT669 LFPAK56) AEC-Q101

    sot669 footprint

    Abstract: No abstract text available
    Text: LF PA K 56 PHPT61003NY 100 V, 3 A NPN high power bipolar transistor 13 December 2013 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61003PY


    Original     		PDF PHPT61003NY OT669 LFPAK56) PHPT61003PY AEC-Q101 sot669 footprint

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 PHPT61003NY 100 V, 3 A NPN high power bipolar transistor 3 February 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61003PY


    Original     		PDF PHPT61003NY OT669 LFPAK56) PHPT61003PY AEC-Q101

    SOT669

    Abstract: PH2925U MO-235 MO-235 FOOTPRINT
    Text: PH2925U TrenchMOS ultra low level FET Rev. 01 — 02 May 2003 M3D748 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology. Product availability: PH2925U in SOT669 LFPAK .


    Original     		PDF PH2925U M3D748 PH2925U OT669 SOT669 MO-235 MO-235 FOOTPRINT

    PSMN012-100YS

    Abstract: 175C D586 sot669 package
    Text: PSMN012-100YS N-channel 100V 13mΩ standard level MOSFET in TO220 Rev. 01 — 22 October 2009 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement MOSFET in a SOT669 package qualified to 175C. This product is designed and qualified for use in computing, communications,


    Original     		PDF PSMN012-100YS OT669 PSMN012-100YS 175C D586 sot669 package

    so8 footprint

    Abstract: sot669 package SO8 package PSMN026-80YS sot669 PSMN012-100YS PSMN1R2-25YL PSMN1R3-30YL PSMN1R5-25YL PSMN1R7-30YL
    Text: New Trench 6 MOSFETs in a Power-SO8 package 25 V to 100 V MOSFETs in Power-SO8 We’ve extended our range of Trench 6 MOSFETs with new devices at 60 V and 100 V in the LFPAK SOT669 package. NXP leads the way with its range of Trench 6 MOSFETs in LFPAK (Loss Free PAcKage). By combining Trench 6 silicon


    Original     		PDF OT669) PSMN5R5-60YS) so8 footprint sot669 package SO8 package PSMN026-80YS sot669 PSMN012-100YS PSMN1R2-25YL PSMN1R3-30YL PSMN1R5-25YL PSMN1R7-30YL